BE806148A - REACTION ENCLOSURE FOR DEPOSIT OF SEMICONDUCTOR MATERIAL ON HEATED SUPPORT BODIES - Google Patents

REACTION ENCLOSURE FOR DEPOSIT OF SEMICONDUCTOR MATERIAL ON HEATED SUPPORT BODIES

Info

Publication number
BE806148A
BE806148A BE136753A BE136753A BE806148A BE 806148 A BE806148 A BE 806148A BE 136753 A BE136753 A BE 136753A BE 136753 A BE136753 A BE 136753A BE 806148 A BE806148 A BE 806148A
Authority
BE
Belgium
Prior art keywords
deposit
semiconductor material
support bodies
heated support
reaction enclosure
Prior art date
Application number
BE136753A
Other languages
French (fr)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of BE806148A publication Critical patent/BE806148A/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/004—Sight-glasses therefor
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
BE136753A 1973-05-14 1973-10-16 REACTION ENCLOSURE FOR DEPOSIT OF SEMICONDUCTOR MATERIAL ON HEATED SUPPORT BODIES BE806148A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2324365A DE2324365C3 (en) 1973-05-14 1973-05-14 Reaction vessel for depositing semiconductor material on heated substrates

Publications (1)

Publication Number Publication Date
BE806148A true BE806148A (en) 1974-02-15

Family

ID=5880921

Family Applications (1)

Application Number Title Priority Date Filing Date
BE136753A BE806148A (en) 1973-05-14 1973-10-16 REACTION ENCLOSURE FOR DEPOSIT OF SEMICONDUCTOR MATERIAL ON HEATED SUPPORT BODIES

Country Status (6)

Country Link
US (1) US3918396A (en)
JP (1) JPS5018363A (en)
BE (1) BE806148A (en)
DE (1) DE2324365C3 (en)
IT (1) IT1012141B (en)
PL (1) PL93312B1 (en)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4898110U (en) * 1972-02-19 1973-11-20
DE2518853C3 (en) * 1975-04-28 1979-03-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Device for separating elemental silicon from a reaction gas
US4018184A (en) * 1975-07-28 1977-04-19 Mitsubishi Denki Kabushiki Kaisha Apparatus for treatment of semiconductor wafer
JPS5277727U (en) * 1975-12-06 1977-06-10
US4173944A (en) * 1977-05-20 1979-11-13 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Silverplated vapor deposition chamber
US4179530A (en) * 1977-05-20 1979-12-18 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for the deposition of pure semiconductor material
JPS5447411U (en) * 1977-09-08 1979-04-02
DE2826860C2 (en) * 1978-06-19 1987-04-16 Siemens AG, 1000 Berlin und 8000 München Device for depositing semiconductor material
US4539933A (en) * 1983-08-31 1985-09-10 Anicon, Inc. Chemical vapor deposition apparatus
US4673799A (en) * 1985-03-01 1987-06-16 Focus Semiconductor Systems, Inc. Fluidized bed heater for semiconductor processing
JPS61246370A (en) * 1985-04-23 1986-11-01 Sakaguchi Dennetsu Kk Gaseous phase chemical reaction furnace
KR890002965B1 (en) * 1986-12-01 1989-08-14 재단법인 한국화학연구소 Manufacture method and device of silicon semiconductor
US4805556A (en) * 1988-01-15 1989-02-21 Union Carbide Corporation Reactor system and method for forming uniformly large-diameter polycrystalline rods by the pyrolysis of silane
US5382419A (en) * 1992-09-28 1995-01-17 Advanced Silicon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
US5478396A (en) * 1992-09-28 1995-12-26 Advanced Silicon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
DK0781594T3 (en) * 1995-12-29 2002-07-29 Glatt Gmbh Wall that has at least one window with at least one window
RU2010143546A (en) * 2008-03-26 2012-05-10 ДжиТи СОЛАР, ИНКОРПОРЕЙТЕД (US) GOLD-COATED REACTOR SYSTEM FOR DEPOSIT OF POLYCRYSTAL SILICON AND METHOD
CN104357807B (en) * 2008-03-26 2019-06-28 Oci有限公司 The system and method for distribution are used in CVD reactor
RU2503905C2 (en) * 2008-04-14 2014-01-10 Хемлок Семикондактор Корпорейшн Production plant for deposition of material and electrode for use in it
WO2009128888A1 (en) * 2008-04-14 2009-10-22 Hemlock Semiconductor Corporation Manufacturing apparatus for depositing a material and an electrode for use therein
WO2009128887A1 (en) * 2008-04-14 2009-10-22 Hemlock Semiconductor Corporation Manufacturing apparatus for depositing a material on an electrode for use therein
JP5477145B2 (en) * 2009-04-28 2014-04-23 三菱マテリアル株式会社 Polycrystalline silicon reactor
MY162042A (en) * 2011-07-20 2017-05-31 Hemlock Semiconductor Operations Llc Manufacturing apparatus for depositing a material on a carrier body
DE202012100839U1 (en) * 2012-03-08 2012-06-22 Silcontec Gmbh laboratory reactor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2854226A (en) * 1955-03-28 1958-09-30 Surface Combustion Corp Annealing cover furnace with improved inner cover seal
US3460816A (en) * 1962-01-02 1969-08-12 Gen Electric Fluxless aluminum brazing furnace
DE1244733B (en) * 1963-11-05 1967-07-20 Siemens Ag Device for growing monocrystalline semiconductor material layers on monocrystalline base bodies
US3391270A (en) * 1965-07-27 1968-07-02 Monsanto Co Electric resistance heaters
DE1521494B1 (en) * 1966-02-25 1970-11-26 Siemens Ag Device for diffusing foreign matter into semiconductor bodies
DE2033444C3 (en) * 1970-07-06 1979-02-15 Siemens Ag Device for diffusing dopants into wafers made of semiconductor material
US3690290A (en) * 1971-04-29 1972-09-12 Motorola Inc Apparatus for providing epitaxial layers on a substrate
US3913738A (en) * 1973-05-03 1975-10-21 Illinois Tool Works Multi container package and carrier

Also Published As

Publication number Publication date
JPS5018363A (en) 1975-02-26
DE2324365A1 (en) 1974-12-05
PL93312B1 (en) 1977-05-30
DE2324365C3 (en) 1978-05-11
US3918396A (en) 1975-11-11
DE2324365B2 (en) 1977-09-08
IT1012141B (en) 1977-03-10

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: SIEMENS A.G.

Effective date: 19851031