IT1046164B - REACTION CONTAINER FOR STORING SEMICONDUCTOR MATERIAL ON HEATED SUPPORT BODIES - Google Patents

REACTION CONTAINER FOR STORING SEMICONDUCTOR MATERIAL ON HEATED SUPPORT BODIES

Info

Publication number
IT1046164B
IT1046164B IT29815/74A IT2981574A IT1046164B IT 1046164 B IT1046164 B IT 1046164B IT 29815/74 A IT29815/74 A IT 29815/74A IT 2981574 A IT2981574 A IT 2981574A IT 1046164 B IT1046164 B IT 1046164B
Authority
IT
Italy
Prior art keywords
semiconductor material
reaction container
support bodies
heated support
storing semiconductor
Prior art date
Application number
IT29815/74A
Other languages
Italian (it)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19732359563 external-priority patent/DE2359563C3/en
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT1046164B publication Critical patent/IT1046164B/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/08Reaction chambers; Selection of materials therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
IT29815/74A 1973-11-29 1974-11-26 REACTION CONTAINER FOR STORING SEMICONDUCTOR MATERIAL ON HEATED SUPPORT BODIES IT1046164B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732359563 DE2359563C3 (en) 1973-05-14 1973-11-29 Reaction vessel for depositing semiconductor material

Publications (1)

Publication Number Publication Date
IT1046164B true IT1046164B (en) 1980-06-30

Family

ID=5899446

Family Applications (1)

Application Number Title Priority Date Filing Date
IT29815/74A IT1046164B (en) 1973-11-29 1974-11-26 REACTION CONTAINER FOR STORING SEMICONDUCTOR MATERIAL ON HEATED SUPPORT BODIES

Country Status (7)

Country Link
US (1) US3919968A (en)
JP (1) JPS5523457B2 (en)
BE (1) BE817066R (en)
CA (1) CA1055817A (en)
DK (1) DK590174A (en)
IT (1) IT1046164B (en)
PL (1) PL97254B4 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5183473A (en) * 1975-01-20 1976-07-22 Hitachi Ltd Fujunbutsuno doopinguhoho
DE2518853C3 (en) * 1975-04-28 1979-03-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Device for separating elemental silicon from a reaction gas
DE2834813C2 (en) * 1978-08-09 1983-01-20 Leybold-Heraeus GmbH, 5000 Köln Method and device for regulating the evaporation rate of oxidizable substances during reactive vacuum evaporation
JPS61246370A (en) * 1985-04-23 1986-11-01 Sakaguchi Dennetsu Kk Gaseous phase chemical reaction furnace
JPH0729874B2 (en) * 1989-11-04 1995-04-05 コマツ電子金属株式会社 Bridge for connecting core wires of polycrystalline silicon manufacturing equipment
EP0903577A3 (en) 1997-07-29 2003-03-05 Leybold Inficon, Inc. Acoustic consumption monitor
US6402844B1 (en) * 1998-09-08 2002-06-11 Tokyo Electron Limited Substrate processing method and substrate processing unit
US6770144B2 (en) * 2000-07-25 2004-08-03 International Business Machines Corporation Multideposition SACVD reactor
WO2003023229A1 (en) * 2001-09-06 2003-03-20 Ulvac, Inc. Vacuum pumping system and method of operating vacuum pumping system
JP4527670B2 (en) 2006-01-25 2010-08-18 東京エレクトロン株式会社 Heat treatment apparatus, heat treatment method, control program, and computer-readable storage medium
MD4167C1 (en) * 2010-12-23 2012-12-31 Государственный Медицинский И Фармацевтический Университет "Nicolae Testemitanu" Республики Молдова Device and method for excision of quadrangular cartilage of the nasal septum

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2854226A (en) * 1955-03-28 1958-09-30 Surface Combustion Corp Annealing cover furnace with improved inner cover seal
US3460816A (en) * 1962-01-02 1969-08-12 Gen Electric Fluxless aluminum brazing furnace
DE1244733B (en) * 1963-11-05 1967-07-20 Siemens Ag Device for growing monocrystalline semiconductor material layers on monocrystalline base bodies
US3391270A (en) * 1965-07-27 1968-07-02 Monsanto Co Electric resistance heaters
DE1521494B1 (en) * 1966-02-25 1970-11-26 Siemens Ag Device for diffusing foreign matter into semiconductor bodies
DE2033444C3 (en) * 1970-07-06 1979-02-15 Siemens Ag Device for diffusing dopants into wafers made of semiconductor material
US3690290A (en) * 1971-04-29 1972-09-12 Motorola Inc Apparatus for providing epitaxial layers on a substrate

Also Published As

Publication number Publication date
US3919968A (en) 1975-11-18
BE817066R (en) 1974-10-16
CA1055817A (en) 1979-06-05
JPS5090285A (en) 1975-07-19
DK590174A (en) 1975-07-28
JPS5523457B2 (en) 1980-06-23
PL97254B4 (en) 1978-02-28

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