CA2511836A1 - Micromechanical or microoptoelectronic devices with deposit of getter material and integrated heater, and support for the production thereof - Google Patents
Micromechanical or microoptoelectronic devices with deposit of getter material and integrated heater, and support for the production thereof Download PDFInfo
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- CA2511836A1 CA2511836A1 CA002511836A CA2511836A CA2511836A1 CA 2511836 A1 CA2511836 A1 CA 2511836A1 CA 002511836 A CA002511836 A CA 002511836A CA 2511836 A CA2511836 A CA 2511836A CA 2511836 A1 CA2511836 A1 CA 2511836A1
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- deposit
- getter material
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- layer
- throughholes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0035—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS
- B81B7/0038—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
Abstract
Micromechanical (10; 20) or microoptoelectronic (30) devices are described which comprises a deposit of getter material (17; 25; 35) for the sorption o f gases being detrimental to the operation of said devices and an integrated system (18, 18~, 19, 19~) for heating the getter material from the outside a t each moment this is required during the life of the device. Various embodiments of a support for manufacturing these devices are also described.
Description
MICROMECHANICAL OR MICROOPTOELECTRONIC DEVICES WITH
DEPOSIT OF GETTER MATERIAL AND INTEGRATED HEATER, AND
SUPPORT FOR THE PRODUCTION THEREOF
The present invention relates to micromechanical or microoptoelectronic devices comprising a deposit of Better material for the sorption of gases which are detrimental to the operation of said devices and an integrated heater for the activation or reactivation of the Better material during the life of the device itself;
the invention also relates to supports particularly suited for the production of these devices.
Micromechanical devices (better known in the field with the definition "micromachines" or its abbreviation MMs) are under development for applications such as miniaturized sensors or actuators: typical examples of MMs are the microaccelerometers, used as sensors to activate automobile aixbags, micromotors with gears and sprocket wheels having the size of a few microns, or the optic switches, wherein a mirror surface with a size of the order of some tens microns can be moved between two different positions, directing a light beam along two different directions one of which corresponding to the "on"
condition and the other to the "off ' condition of an optical circuit.
The microoptoelectronic devices comprise, for example, new generation infrared radiation (IR) sensors which, unlilce the traditional ones, do not require cryogenic temperatures for their operation. These IR sensors are formed of an array of semiconductor material deposits, for example silicon, arranged in an evacuated chamber. All these devices will be referred to in the following by the general definition of miniaturized devices.
The miniaturized devices are generally manufactured through a technology derived from the microelectronic industry, comprising operations of depositing on a planar support layers of materials with different electric (or magnetic) functionality, alternated to selective removals thereof. These devices axe generally contained in housings formed, in their turn, with the same techniques. The support which is most commonly used in these productions is a silicon wafer, less than about 1 mm thick and with a diameter of up to 30 cm. On each one of these wafers a very high number of devices are manufactured; then, at the end of the manufacturing process, from these wafers by mechanical or laser cut are separated the single devices in the case of MMs, or parts including an array of some tens of devices in the case of IR sensors.
The steps of depositing the various layers are carried out with such techniques as Chemical Vapour Deposition, generally referred to as "CVD", or Physical Vapour Deposition (or "PVD"). the latter being commonly indicated also as "sputtering". Generally, selective removals are carried out through chemical or physical etchings with suitable masking, as it is well known in this field.
Generally MMs are then incapsulated in metallic or ceramic containers, essentially for mechanical protection reasons, before being inserted in the final destination apparatus (a computer, an automobile, etc.). IR radiation sensors are instead generally comprised in- a chamber, facing one wall thereof, called "window", transparent to the IR radiation.
The functionality of the miniaturized devices can be altered by the presence of undesired gases. In MMs, the mechanical friction between gas molecules axZd a moving part, due to the very small size of the latter, can lead to sensible deviations from the device's ideal operation; moreover, polar molecules such as water can cause phenomena of adhesion between the moving part and other parts, for example the support thereof, thus causing the possible device failure. In case of IR
sensors, the gases possibly present in the chamber can sorb, a fraction of the radiation or transport heat by convection from the window to the array of silicon deposits, thus modifying the measurement. Therefore it is fundamental to ensure that the housing of these miniaturized devices is kept under vacuum during the whole life of the device.
In order to minimize the gas amount in these devices, their manufacturing is usually carried out in vacuum chambers while resorting to pumping steps before the paclcaging thereof. However the problem is not completely solved in this way, because the same materials the devices are made of can release gases, or these can permeate from the outside (e.g. through the weldings).
DEPOSIT OF GETTER MATERIAL AND INTEGRATED HEATER, AND
SUPPORT FOR THE PRODUCTION THEREOF
The present invention relates to micromechanical or microoptoelectronic devices comprising a deposit of Better material for the sorption of gases which are detrimental to the operation of said devices and an integrated heater for the activation or reactivation of the Better material during the life of the device itself;
the invention also relates to supports particularly suited for the production of these devices.
Micromechanical devices (better known in the field with the definition "micromachines" or its abbreviation MMs) are under development for applications such as miniaturized sensors or actuators: typical examples of MMs are the microaccelerometers, used as sensors to activate automobile aixbags, micromotors with gears and sprocket wheels having the size of a few microns, or the optic switches, wherein a mirror surface with a size of the order of some tens microns can be moved between two different positions, directing a light beam along two different directions one of which corresponding to the "on"
condition and the other to the "off ' condition of an optical circuit.
The microoptoelectronic devices comprise, for example, new generation infrared radiation (IR) sensors which, unlilce the traditional ones, do not require cryogenic temperatures for their operation. These IR sensors are formed of an array of semiconductor material deposits, for example silicon, arranged in an evacuated chamber. All these devices will be referred to in the following by the general definition of miniaturized devices.
The miniaturized devices are generally manufactured through a technology derived from the microelectronic industry, comprising operations of depositing on a planar support layers of materials with different electric (or magnetic) functionality, alternated to selective removals thereof. These devices axe generally contained in housings formed, in their turn, with the same techniques. The support which is most commonly used in these productions is a silicon wafer, less than about 1 mm thick and with a diameter of up to 30 cm. On each one of these wafers a very high number of devices are manufactured; then, at the end of the manufacturing process, from these wafers by mechanical or laser cut are separated the single devices in the case of MMs, or parts including an array of some tens of devices in the case of IR sensors.
The steps of depositing the various layers are carried out with such techniques as Chemical Vapour Deposition, generally referred to as "CVD", or Physical Vapour Deposition (or "PVD"). the latter being commonly indicated also as "sputtering". Generally, selective removals are carried out through chemical or physical etchings with suitable masking, as it is well known in this field.
Generally MMs are then incapsulated in metallic or ceramic containers, essentially for mechanical protection reasons, before being inserted in the final destination apparatus (a computer, an automobile, etc.). IR radiation sensors are instead generally comprised in- a chamber, facing one wall thereof, called "window", transparent to the IR radiation.
The functionality of the miniaturized devices can be altered by the presence of undesired gases. In MMs, the mechanical friction between gas molecules axZd a moving part, due to the very small size of the latter, can lead to sensible deviations from the device's ideal operation; moreover, polar molecules such as water can cause phenomena of adhesion between the moving part and other parts, for example the support thereof, thus causing the possible device failure. In case of IR
sensors, the gases possibly present in the chamber can sorb, a fraction of the radiation or transport heat by convection from the window to the array of silicon deposits, thus modifying the measurement. Therefore it is fundamental to ensure that the housing of these miniaturized devices is kept under vacuum during the whole life of the device.
In order to minimize the gas amount in these devices, their manufacturing is usually carried out in vacuum chambers while resorting to pumping steps before the paclcaging thereof. However the problem is not completely solved in this way, because the same materials the devices are made of can release gases, or these can permeate from the outside (e.g. through the weldings).
To remove also the gases entering the solid state devices during their life, it has been proposed-the use of a getter material. Getter materials are metals such as zirconium, titanium, vanadium, niobium or tantalum, or alloys thereof with other transition metals, Rare Earths or aluminum. These metals or alloys have a strong chemical affinity With gases such as hydrogen, oxygen, water, carbon oxides and, in some extent, lower hydrocarbons; some getter alloys are also capable of sorbing nitrogen. The use of getter materials in MMs is disclosed e.g. in the article "Vacuum packaging for microsensors by glass-silicon anodic bonding" by H.
Henrni et al., published on the technical magazine Sensors and Actuators A, vol.
43 (1994), at pages 243-248, and in the patents US 5,155,778, US 5,952,572 and US 6,469,821, while the use of getter materials in IR sensors is disclosed e.g. in the patents US 5,921,461 and US 6,252,229.
International patent applications WO 03/009317 and WO 03/009318 in the applicant's name, and patent application US 2003/0138656 describe wafers to be used in manufacturing miniaturized devices, wherein on the wafer there is already a layer of a gas sorbing material, possibly temporarily protected and to be exposed to the internal atmosphere of the device during its manufacturing.
As it is known, getter materials (both metals and alloys) require for their operation a thermal treatment of initial activation, by which a passivating layer (generally formed of oxides, carbides or nitrides of the metals) is removed from the material surface and a fresh "clean" surface is exposed, capable of interacting with gases. In the known processes for manufacturing miniaturized devices containing getter materials, this .activation is carried out during the thermal treatment of sealing, wherein two parts (generally of silicon) are welded to each other by heating at about 1000°C in case of direct welding silicon-silicon, or at a lower temperature in case that a suitable material is interposed between the two parts, such as an eutectic Au-Si composition melting at about 370°C.
However, during this process, the materials forming the miniaturized device can release gases which are sorbed by the Better. The consequence is an inefficient Better activation, since the material is continuously exposed to the gases during the whole high temperature treatment, so that at the end of the process its surface will not be formed of metallic atoms only, but it will be still covered with oxides, carbides of nitrides, to a so greater extent as greater is the quantity of gases in the environment of the getter during the thermal treatment. In the worst case (high gas loads), upon sealing the device the getter is practically inactive. The cited patent application US 200310138656 describe a wafer in which the getter layer is temporarily protected by a very thin layer of an inert metal, e.g. gold, that during the welding step at high temperature diffuses into the getter, thus liberating a fresh surface of getter material; however, in this .case there is no control on the time frame or the degree of this diffusion, that may thus happen too early (thus not avoiding in practice the problem of having a spent getter at the end of the process) or to a too limited extent, so that there is in the end only a limited amount of free getter, with a resulting low gas-sorption activity.
Therefore it would be necessary to have the possibility of subjecting the getter to a treatment of reactivation or to keep it at a temperature of about 300°C
during the working steps of the miniaturized device. However this requires heating of the whole device, which is generally impractical and in some cases impossible to be performed, as at the getter activation temperatures there is the risk of damaging the device.
To solve this problem, the patent application US 200210149096 proposes a method for manufacturing miniaturized devices operating under vacuum wherein the getter can be heated at will during the life of the device. According to the teaching of this application, on the substrate of the device provided with the active (mechanical or optoelectronic) structures also a getter material deposit is formed, that can be activated when necessary by means of a transistor which is also integrated in the substrate.
This method, although overcomes the drawbacks of the passive activation in the welding step and of an active one by heating the whole device, involves however a rather complex structure of the device. In fact, the activation transistor (or other similar semiconductor device) is formed first on the substrate, possibly as overlapping of various layers, then covered with a layer of dielectric material, this too possibly as overlapping of various layers, wherein openings connecting to the underlying transistor must be formed. On the dielectric material a layer of electrically conductive material is then applied, which is connected to the transistor through the above-mentioned openings and in turn leads the activation current to the overlying layer of Better material directly or through an additional layer of electrically resistive material acting as heater.
It is clear that such a structure gives rise to manufacturing times and costs which are rather high, as well as possible inconveniences of operation during the Better activation steps. The dielectric layer is in fact necessary to protect the transistor or other semiconductor whose performances are spoiled by temperatures of about 400°C, that can be reached for the Better activation.
Furthermore it is also provided the presence of a temperature sensor which is able to send a signal to disactivate the Better heating system when a pre-fixed threshold is exceeded.
This obviously implies a further increase of costs and complexity of the device.
As regards the process, the use of the same manufacturing tools both for the transistors and for the Better material can result in contamination by zirconium or other heavy metals comprised in the Better film, which 'can change the features of electric conductivity of other semiconductor layers of different transistors.
Finally it should be considered that to make such a structure it is impossible to use the wafers with previously applied Better material according to the above-mentioned international applications, whereby a specific manufacturing step is always required for the application of the Better material.
The object of the present invention is to overcome the above-mentioned drawbacks of ' the prior art devices, by providing micromechanical or microoptoelectronic devices having simple structure in which it is possible to heat the Better material only at any moment of the device life.
This object is achieved by means of devices comprising a deposit of Better material and integrated members for heating the Better material in the form of electric contacts passing throughout the device structure and connected to the Better material directly or through a heater, possibly provided with a layer of dielectric material. Other advantageous features are indicated in the dependent claims.
Henrni et al., published on the technical magazine Sensors and Actuators A, vol.
43 (1994), at pages 243-248, and in the patents US 5,155,778, US 5,952,572 and US 6,469,821, while the use of getter materials in IR sensors is disclosed e.g. in the patents US 5,921,461 and US 6,252,229.
International patent applications WO 03/009317 and WO 03/009318 in the applicant's name, and patent application US 2003/0138656 describe wafers to be used in manufacturing miniaturized devices, wherein on the wafer there is already a layer of a gas sorbing material, possibly temporarily protected and to be exposed to the internal atmosphere of the device during its manufacturing.
As it is known, getter materials (both metals and alloys) require for their operation a thermal treatment of initial activation, by which a passivating layer (generally formed of oxides, carbides or nitrides of the metals) is removed from the material surface and a fresh "clean" surface is exposed, capable of interacting with gases. In the known processes for manufacturing miniaturized devices containing getter materials, this .activation is carried out during the thermal treatment of sealing, wherein two parts (generally of silicon) are welded to each other by heating at about 1000°C in case of direct welding silicon-silicon, or at a lower temperature in case that a suitable material is interposed between the two parts, such as an eutectic Au-Si composition melting at about 370°C.
However, during this process, the materials forming the miniaturized device can release gases which are sorbed by the Better. The consequence is an inefficient Better activation, since the material is continuously exposed to the gases during the whole high temperature treatment, so that at the end of the process its surface will not be formed of metallic atoms only, but it will be still covered with oxides, carbides of nitrides, to a so greater extent as greater is the quantity of gases in the environment of the getter during the thermal treatment. In the worst case (high gas loads), upon sealing the device the getter is practically inactive. The cited patent application US 200310138656 describe a wafer in which the getter layer is temporarily protected by a very thin layer of an inert metal, e.g. gold, that during the welding step at high temperature diffuses into the getter, thus liberating a fresh surface of getter material; however, in this .case there is no control on the time frame or the degree of this diffusion, that may thus happen too early (thus not avoiding in practice the problem of having a spent getter at the end of the process) or to a too limited extent, so that there is in the end only a limited amount of free getter, with a resulting low gas-sorption activity.
Therefore it would be necessary to have the possibility of subjecting the getter to a treatment of reactivation or to keep it at a temperature of about 300°C
during the working steps of the miniaturized device. However this requires heating of the whole device, which is generally impractical and in some cases impossible to be performed, as at the getter activation temperatures there is the risk of damaging the device.
To solve this problem, the patent application US 200210149096 proposes a method for manufacturing miniaturized devices operating under vacuum wherein the getter can be heated at will during the life of the device. According to the teaching of this application, on the substrate of the device provided with the active (mechanical or optoelectronic) structures also a getter material deposit is formed, that can be activated when necessary by means of a transistor which is also integrated in the substrate.
This method, although overcomes the drawbacks of the passive activation in the welding step and of an active one by heating the whole device, involves however a rather complex structure of the device. In fact, the activation transistor (or other similar semiconductor device) is formed first on the substrate, possibly as overlapping of various layers, then covered with a layer of dielectric material, this too possibly as overlapping of various layers, wherein openings connecting to the underlying transistor must be formed. On the dielectric material a layer of electrically conductive material is then applied, which is connected to the transistor through the above-mentioned openings and in turn leads the activation current to the overlying layer of Better material directly or through an additional layer of electrically resistive material acting as heater.
It is clear that such a structure gives rise to manufacturing times and costs which are rather high, as well as possible inconveniences of operation during the Better activation steps. The dielectric layer is in fact necessary to protect the transistor or other semiconductor whose performances are spoiled by temperatures of about 400°C, that can be reached for the Better activation.
Furthermore it is also provided the presence of a temperature sensor which is able to send a signal to disactivate the Better heating system when a pre-fixed threshold is exceeded.
This obviously implies a further increase of costs and complexity of the device.
As regards the process, the use of the same manufacturing tools both for the transistors and for the Better material can result in contamination by zirconium or other heavy metals comprised in the Better film, which 'can change the features of electric conductivity of other semiconductor layers of different transistors.
Finally it should be considered that to make such a structure it is impossible to use the wafers with previously applied Better material according to the above-mentioned international applications, whereby a specific manufacturing step is always required for the application of the Better material.
The object of the present invention is to overcome the above-mentioned drawbacks of ' the prior art devices, by providing micromechanical or microoptoelectronic devices having simple structure in which it is possible to heat the Better material only at any moment of the device life.
This object is achieved by means of devices comprising a deposit of Better material and integrated members for heating the Better material in the form of electric contacts passing throughout the device structure and connected to the Better material directly or through a heater, possibly provided with a layer of dielectric material. Other advantageous features are indicated in the dependent claims.
The basic advantage of the device according to the present invention lies in fact in the possibility of activating at will the Better during the device life, while maintaining a simple structure of economic manufacture, which can be advantageously made from semi-finished elements.
This and additional advantages and features of the device according to the invention will become apparent to those skilled in the art from the following detailed description of some embodiments with reference to the annexed drawings in which:
- Fig. 1 shows in cross-section a first embodiment of a miniaturized device according to the invention, representing the case of a MM;
- Fig. 1 a shows an enlarged view of the region of the device of Fig. 1 where the Better material is present;
- Fig. 2 shows in cross-section a second embodiment of MM according to the invention;
- Fig. 3 shows in cross-section a third embodiment of the miniaturized device according to the invention, in the case of a miniaturized IR sensor;
- Fig. 4 shows in.cross-section a variation that can be applied to the above embodiments of the invention;
- Figs. 5-7 show in cross-section some embodiments of supports for the manufacturing of miniaturized devices according to the invention.
Making reference first to Figs. l and 1 a, a MM is represented, comprising a Better material and the integrated heater member for the Better material. MM
comprises a first portion 11 (cap) in which a hollow 12 is formed, and a second portion 13 (base), welded to each other along the perimeter 14 thus defining an inner space 15. In this space the mobile portion of MM is housed, being schematically represented in the drawing as member 16; for the sake of clarity there are not shown the electrical contacts for feeding the mobile member 16 or for transmitting outside a signal detected by member 16 when the MM is a sensor (for example a microaccelerometer). In the space 15 there is also present a deposit 17 of Better material for removing therefrom gas molecules which would interfere with the correct operation of the MM.
_7_ As shown in Fig. 1 a, at two opposite ends of deposit 17 two electrical contacts 1 ~, 18' are connected by throughholes 19, I9' formed in the base 13.
Holes 19, 19' and deposit 17 must be so constructed as to ensure gas-tightness of the structure. To this effect holes 19, 19' can be filled with metal, and the metal in S the holes 19, 19' emerging at the external surface of base 13 can then be used to form electrical connections, such as with cables (whose ends can e.g. be embedded in the metal) or, according to a more usual solution in the electronic field, with conductive "tracks" formed in turn on said external surface of base 13 (such as by screen printing).
Fig. 2 shows in cross-section an alternative embodiment of a MM according to the invention. In this case MM 20 is formed of a base 21 and a cap 22 welded together along their perimeter, thus defining a space 23; in space 23, on the inner surface of base 21, there is formed the mobile portion 24 of the MM (also in this case the electric contacts to connect this portion to the outside are not shown).
Differently from the device represented in Fig. 1, in this case a deposit 25 of getter material is formed on the , inner surface of cap 22. The deposit 25 is connected through two holes 26, 26', formed in cap 22, to two electric contacts 27, 27' for its heating by current flow. Also in this case recourse can be made to the filling of holes 26, 26' with a metal to ensure gas-tightness of space 23.
A
. structure of type 20 can result preferable, as the forming of deposit 25 on a surface free of other structures make easier all the manufacturing steps and also the surface available for deposit 25 is increased as well as its efficiency in gas removal.
Fig. 3 shows schematically the use of the invention in case of a microoptoelectronic device, in the exemplified case an IR microsensor.
Microsensor 30 is formed of a base 31 and a cap 32 which define an inner space 33 to be kept under vacuuiu and from which possible gas traces must be removed by the getter material. Cap 32 is transparent to IR radiation, symbolically represented by wavy arrows. On the inner portion of base 31 members 34, 34', ...
are formed, which are responsive to IR radiation; also in tlus case the circuitry useful to connect these members to the outside is not shown. In a portion of the _$_ inner surface of base 31 which is free from sensor members there is formed a deposit 35 of Better material, also in this case connected to electric contacts 36, 36' by means of holes formed in base 31 (the holes are not shown for the sake of drawing clarity).
In case of a microoptoelectronic device it is impossible to adopt the configuration of Fig. 2 in order not to affect the features of transparency to IR
radiation of cap 32. It is possible anyway to place Better material along a perimetral frame of cap 32 or along the vertical walls of base 31 to leave the whole horizontal surface of base 31 available for the sensor members 34, 34' .
. . .
In all the above-illustrated devices, when the characteristics of the deposit of Better material are such that it cannot be efficiently heated by a flow of electric current, it is possible to adopt the variation of the invention as represented in Fig:
4, which shows in cross-section only essential elements of the variation itself.
In this case the Better material deposit 40 is not directly formed on base 41 (which can be anyone of elements 1 l, I3, 21, 22, 31 or 32), but on an additional layer 42 having electric features which are suitable to heating by current flow.
Layer 42 is connected to contacts 43, 43' which, by meaais of throughholes 44, 44', are in turn in contact with external electric connections as described with reference to Fig. 1.
In awadditional variation, not shown, if the Better material used cannot be in direct contact with the heating layer 42 for chemical and/or physical reasons, an additional layer can be provided which is electrically insulating but thermally conductive (e.g. silicon dioxide) interposed between Better and heater 42.
Getter materials which is possible to use in the invention are the most varied and comprise metals such as Zr, Ti, Nb, Ta, V, alloys among these metals, or alloys among these and one or more elements chosen among Cr, Mn, Fe, Co, Ni, Al, Y, La and Rare Earths. As examples mention can be made of binary alloys Ti-V, Zr-V, Zr-Fe and Zr-Ni, ternary alloys Zr-Mn-Fe, Zr-V-Fe or Zr-Co-A (wherein A represents mischmetal, a commercial mixture of yttrium, lanthanum and Rare Earths), or mixtures among the previously indicated metals and alloys; hhese mixtures are preferable due to their good mechanical features, with particular regard to the loss of particles.
The deposit of Better material can be obtained with various techniques, such as cold rolling, which is possible if the support on which the deposit is formed is not too fragile; electrophoresis, being possible in case the support is an electrical conductor, and possibly confining the deposit through suitable maskings with .
insulating materials to be removed after the deposit formation; screen printing, by confining the deposit with mechanical maskings; or the sputtering technique, also in this case by confining the deposit in the desixed area by means of chemical maskings to be removed after deposition. For miniaturized devices of lateral sizes of some millimetres, it is possible to use all the indicated techniques, whereas for devices having lateral sizes of about 1 mm or less, the preferred technique is sputtering.
For the invention purposes the Better deposit must be able to be heated by current flow at a temperature between about 200 and 400°C, preferably between about 250 and 350°C. The more compact deposits, such as those obtained by sputtering, cari be directly heated at the desired temperatures by current flow.
On the contrary, more porous deposits such as those obtained by electrophoresis or screen printing may be difficult to heat directly by current flow and in this case it is preferable to make use of the Better material being deposited on an additional layer of suitable characteristics as shown in Fig.4. In this case the additional layer 42 can be made of metal, such as aluminum, or a semiconductor material, such as polycrystalline silicon. Metallic deposits can be obtained with suitable masl~ings by means of techniques such as screen printing, evaporation, galvanic technique or sputtering, all widely l~nown in the field of metallic layer.
formation.
The member on which the Better materialdeposit is formed can be made, depending on the miniaturized device, in various materials, such as metals, ceramics, semiconductors or glass. The preferred material is silicon, as it allows to apply in the field of micromechanical or microoptoelectronic devices the common techniques,.now well-established in the field of microelectronic, consisting in the formation of thin layers on a support and a partial, local removal of these layers, thus obtaining structures of extremely small size in a precise and reproducible manner.
In case of silicon being used, also the throughholes (19, 19'; 26, 26'; 44, 44') leading the electric supply to the deposit of getter material or the layer 42 can be obtained by a technique which is typical in the field of microelectronic, i.e. the anisotropic etching with solutions generally containing the fluoride ion. The speed at which silicon dissolves in these solutions is very different in the various lattice directions of a single crystal of the element, ,so that the etching proceeds almost exclusively along the direction of maximum dissolution speed. Use is made of this characteristic to produce holes of precise size and direction, by cutting a slice of silicon along a plane suitably oriented with respect to the crystal axes, masking the slice with a protective substance in the areas in which etching is to be avoided, and causing thus the directional etching to occur only in pre-selected regions.
In a second aspect thereof the invention deals with the supports for manufacturing micromechanical or microoptoelectronic devices with an integrated deposit of getter material and members for heating the same.
A support according to the invention may be made of metal, ceramic, glass or of a semiconductor material; due to the importance of this latter choice, in the following reference will be made to semiconductor supports. Said support is preferably a wafer of silicon, similar to the supports described in the international patent applications WO 03/009317 and WO 03/009318, but on which there are already provided, in correspondence with the Better material deposit, the throughholes and the electric contacts and possibly a layer of a material that can be heated by flow of electric current in contact with the Better material. As .
described in the cited applications, the Better material deposit can be temporarily protected and become exposed during the manufacturing of the miniaturized device.
Fig. 5 shows in a sectional view a portion of a possible support according to the invention (the dimensional ratios of the various parts, in particular the thickness, are not in scale). Support 50 is formed of a base 51, e.g. of silicon, on which there is deposited a continuous layer 52 of a Better material. ~n surface 53 of base 51 a number of holes 54, 54' in pairs are formed, which allow to bring electrical connections into contact with layer 52. Since in this case layer 52 is continuous, this support can be applied in the configuration previously illustrated with reference to Fig. 2, wherein the getter material is present on a MM
portion opposite to that of mobile portion 24. A number of MMs can be formed from support 50 by cutting the same along the broken lines as shown on surface 53.
A second possible support is represented in cross-section in Fig. 6. In this case the support 60 is formed of a number of layers of different materials which are in the order: a base 61, e.g. of silicon; a layer 62 of a material that can be easily heated by current flow (e.g., aluminum); a layer 63 of getter material;
and a layer 64, for example in silicon oxide, for the temporary protection of layer from the atmospheric gases. In base 61 pairs of holes 65, 65' are formed, which allow the electric supply of layer 62 for its heating. The broken lines are those along which the support 60 will be cut for producing a plurality of MMs;
during the manufacturing the layer 64 will be also removed totally or partially, thus allowing the Better material to be exposed to the inner atmosphere of the MM.
In other variations of the support of the invention, the two layers 62 and 64 could not be present together; for example, in the case that the layer of Better material has already features suitable to heating by current flow, the presence of layer 62 can be -avoided, or it is possible to have a support with layer 62 but without the protective layer 64.
Finally, a last embodiment of support according to the invention is shown in cross-section iri Fig. 7. In this case support 70 consists of a base 71 on which a number of local deposits 72, 72', 72", .... of Better material is present; a pair of holes 73, 73' being formed in base 71 is associated with each one of these deposits, for electrically connecting the deposit with the outside. Regions 74, 74', 74", . . . of base 71 are kept free for the construction of the active structures of the miniaturized device and the broken lines again indicate the cutting lines of support 70 for the production of a number of miniaturized devices.
Also in this case the measures described with reference to' Fig. 6 can be adopted, and namely employing a resistive layer between base 71 and deposits 72, 72', 72", ... to improve the heating of these latter deposits; or employing a layer thereon for the temporary protection of the deposits from atmosphere. A
support of type 70 can be employed in manufacturing MMs, but its use is especially preferable in case of microoptoelectronic devices wherein, as mentioned above, the housing portion opposite to that on which the active structures are obtained must be transparent to radiation and thereby cannot house the deposit of Better material over its own whole surface.
It is clear that the embodiments of the device according to the invention as described and illustrated above are only examples susceptibles of many variations.
In particular the precise shape and placement of the mobile or sensor members and of the Better material deposits can freely vary according to the needs, as well as the material employed and the shapes of the housing hollows, which can be formed either on the base or on the cap or partly on both portions.
Another advantage offered by the invention in case the Better deposit is heated directly through passage of electric current (that is, in case no additional layer of kind 42 is present) is that, by means of the same electric contacts (e.g., 18, 18' or 27, 27') it is possible to monitor the residual gas sorption capability of the Better material. The electric resistance of deposits of Better materials is know~i to increase with the amount of oxide, nitride or carbide species formed at the surface of the material; thus, by checking from time to time the value of electric resistance of the Better deposit using the same contacts as probes, and comparing this value with a preset value indicating exhaustion of the Better, it is possible to know when the Better deposit needs reactivation and thus submitting the deposit to a reactivation step only when needed.
Possible additions andlor modifications can thereby be made to the device object of the present invention without departing from the protective scope of the invention.
This and additional advantages and features of the device according to the invention will become apparent to those skilled in the art from the following detailed description of some embodiments with reference to the annexed drawings in which:
- Fig. 1 shows in cross-section a first embodiment of a miniaturized device according to the invention, representing the case of a MM;
- Fig. 1 a shows an enlarged view of the region of the device of Fig. 1 where the Better material is present;
- Fig. 2 shows in cross-section a second embodiment of MM according to the invention;
- Fig. 3 shows in cross-section a third embodiment of the miniaturized device according to the invention, in the case of a miniaturized IR sensor;
- Fig. 4 shows in.cross-section a variation that can be applied to the above embodiments of the invention;
- Figs. 5-7 show in cross-section some embodiments of supports for the manufacturing of miniaturized devices according to the invention.
Making reference first to Figs. l and 1 a, a MM is represented, comprising a Better material and the integrated heater member for the Better material. MM
comprises a first portion 11 (cap) in which a hollow 12 is formed, and a second portion 13 (base), welded to each other along the perimeter 14 thus defining an inner space 15. In this space the mobile portion of MM is housed, being schematically represented in the drawing as member 16; for the sake of clarity there are not shown the electrical contacts for feeding the mobile member 16 or for transmitting outside a signal detected by member 16 when the MM is a sensor (for example a microaccelerometer). In the space 15 there is also present a deposit 17 of Better material for removing therefrom gas molecules which would interfere with the correct operation of the MM.
_7_ As shown in Fig. 1 a, at two opposite ends of deposit 17 two electrical contacts 1 ~, 18' are connected by throughholes 19, I9' formed in the base 13.
Holes 19, 19' and deposit 17 must be so constructed as to ensure gas-tightness of the structure. To this effect holes 19, 19' can be filled with metal, and the metal in S the holes 19, 19' emerging at the external surface of base 13 can then be used to form electrical connections, such as with cables (whose ends can e.g. be embedded in the metal) or, according to a more usual solution in the electronic field, with conductive "tracks" formed in turn on said external surface of base 13 (such as by screen printing).
Fig. 2 shows in cross-section an alternative embodiment of a MM according to the invention. In this case MM 20 is formed of a base 21 and a cap 22 welded together along their perimeter, thus defining a space 23; in space 23, on the inner surface of base 21, there is formed the mobile portion 24 of the MM (also in this case the electric contacts to connect this portion to the outside are not shown).
Differently from the device represented in Fig. 1, in this case a deposit 25 of getter material is formed on the , inner surface of cap 22. The deposit 25 is connected through two holes 26, 26', formed in cap 22, to two electric contacts 27, 27' for its heating by current flow. Also in this case recourse can be made to the filling of holes 26, 26' with a metal to ensure gas-tightness of space 23.
A
. structure of type 20 can result preferable, as the forming of deposit 25 on a surface free of other structures make easier all the manufacturing steps and also the surface available for deposit 25 is increased as well as its efficiency in gas removal.
Fig. 3 shows schematically the use of the invention in case of a microoptoelectronic device, in the exemplified case an IR microsensor.
Microsensor 30 is formed of a base 31 and a cap 32 which define an inner space 33 to be kept under vacuuiu and from which possible gas traces must be removed by the getter material. Cap 32 is transparent to IR radiation, symbolically represented by wavy arrows. On the inner portion of base 31 members 34, 34', ...
are formed, which are responsive to IR radiation; also in tlus case the circuitry useful to connect these members to the outside is not shown. In a portion of the _$_ inner surface of base 31 which is free from sensor members there is formed a deposit 35 of Better material, also in this case connected to electric contacts 36, 36' by means of holes formed in base 31 (the holes are not shown for the sake of drawing clarity).
In case of a microoptoelectronic device it is impossible to adopt the configuration of Fig. 2 in order not to affect the features of transparency to IR
radiation of cap 32. It is possible anyway to place Better material along a perimetral frame of cap 32 or along the vertical walls of base 31 to leave the whole horizontal surface of base 31 available for the sensor members 34, 34' .
. . .
In all the above-illustrated devices, when the characteristics of the deposit of Better material are such that it cannot be efficiently heated by a flow of electric current, it is possible to adopt the variation of the invention as represented in Fig:
4, which shows in cross-section only essential elements of the variation itself.
In this case the Better material deposit 40 is not directly formed on base 41 (which can be anyone of elements 1 l, I3, 21, 22, 31 or 32), but on an additional layer 42 having electric features which are suitable to heating by current flow.
Layer 42 is connected to contacts 43, 43' which, by meaais of throughholes 44, 44', are in turn in contact with external electric connections as described with reference to Fig. 1.
In awadditional variation, not shown, if the Better material used cannot be in direct contact with the heating layer 42 for chemical and/or physical reasons, an additional layer can be provided which is electrically insulating but thermally conductive (e.g. silicon dioxide) interposed between Better and heater 42.
Getter materials which is possible to use in the invention are the most varied and comprise metals such as Zr, Ti, Nb, Ta, V, alloys among these metals, or alloys among these and one or more elements chosen among Cr, Mn, Fe, Co, Ni, Al, Y, La and Rare Earths. As examples mention can be made of binary alloys Ti-V, Zr-V, Zr-Fe and Zr-Ni, ternary alloys Zr-Mn-Fe, Zr-V-Fe or Zr-Co-A (wherein A represents mischmetal, a commercial mixture of yttrium, lanthanum and Rare Earths), or mixtures among the previously indicated metals and alloys; hhese mixtures are preferable due to their good mechanical features, with particular regard to the loss of particles.
The deposit of Better material can be obtained with various techniques, such as cold rolling, which is possible if the support on which the deposit is formed is not too fragile; electrophoresis, being possible in case the support is an electrical conductor, and possibly confining the deposit through suitable maskings with .
insulating materials to be removed after the deposit formation; screen printing, by confining the deposit with mechanical maskings; or the sputtering technique, also in this case by confining the deposit in the desixed area by means of chemical maskings to be removed after deposition. For miniaturized devices of lateral sizes of some millimetres, it is possible to use all the indicated techniques, whereas for devices having lateral sizes of about 1 mm or less, the preferred technique is sputtering.
For the invention purposes the Better deposit must be able to be heated by current flow at a temperature between about 200 and 400°C, preferably between about 250 and 350°C. The more compact deposits, such as those obtained by sputtering, cari be directly heated at the desired temperatures by current flow.
On the contrary, more porous deposits such as those obtained by electrophoresis or screen printing may be difficult to heat directly by current flow and in this case it is preferable to make use of the Better material being deposited on an additional layer of suitable characteristics as shown in Fig.4. In this case the additional layer 42 can be made of metal, such as aluminum, or a semiconductor material, such as polycrystalline silicon. Metallic deposits can be obtained with suitable masl~ings by means of techniques such as screen printing, evaporation, galvanic technique or sputtering, all widely l~nown in the field of metallic layer.
formation.
The member on which the Better materialdeposit is formed can be made, depending on the miniaturized device, in various materials, such as metals, ceramics, semiconductors or glass. The preferred material is silicon, as it allows to apply in the field of micromechanical or microoptoelectronic devices the common techniques,.now well-established in the field of microelectronic, consisting in the formation of thin layers on a support and a partial, local removal of these layers, thus obtaining structures of extremely small size in a precise and reproducible manner.
In case of silicon being used, also the throughholes (19, 19'; 26, 26'; 44, 44') leading the electric supply to the deposit of getter material or the layer 42 can be obtained by a technique which is typical in the field of microelectronic, i.e. the anisotropic etching with solutions generally containing the fluoride ion. The speed at which silicon dissolves in these solutions is very different in the various lattice directions of a single crystal of the element, ,so that the etching proceeds almost exclusively along the direction of maximum dissolution speed. Use is made of this characteristic to produce holes of precise size and direction, by cutting a slice of silicon along a plane suitably oriented with respect to the crystal axes, masking the slice with a protective substance in the areas in which etching is to be avoided, and causing thus the directional etching to occur only in pre-selected regions.
In a second aspect thereof the invention deals with the supports for manufacturing micromechanical or microoptoelectronic devices with an integrated deposit of getter material and members for heating the same.
A support according to the invention may be made of metal, ceramic, glass or of a semiconductor material; due to the importance of this latter choice, in the following reference will be made to semiconductor supports. Said support is preferably a wafer of silicon, similar to the supports described in the international patent applications WO 03/009317 and WO 03/009318, but on which there are already provided, in correspondence with the Better material deposit, the throughholes and the electric contacts and possibly a layer of a material that can be heated by flow of electric current in contact with the Better material. As .
described in the cited applications, the Better material deposit can be temporarily protected and become exposed during the manufacturing of the miniaturized device.
Fig. 5 shows in a sectional view a portion of a possible support according to the invention (the dimensional ratios of the various parts, in particular the thickness, are not in scale). Support 50 is formed of a base 51, e.g. of silicon, on which there is deposited a continuous layer 52 of a Better material. ~n surface 53 of base 51 a number of holes 54, 54' in pairs are formed, which allow to bring electrical connections into contact with layer 52. Since in this case layer 52 is continuous, this support can be applied in the configuration previously illustrated with reference to Fig. 2, wherein the getter material is present on a MM
portion opposite to that of mobile portion 24. A number of MMs can be formed from support 50 by cutting the same along the broken lines as shown on surface 53.
A second possible support is represented in cross-section in Fig. 6. In this case the support 60 is formed of a number of layers of different materials which are in the order: a base 61, e.g. of silicon; a layer 62 of a material that can be easily heated by current flow (e.g., aluminum); a layer 63 of getter material;
and a layer 64, for example in silicon oxide, for the temporary protection of layer from the atmospheric gases. In base 61 pairs of holes 65, 65' are formed, which allow the electric supply of layer 62 for its heating. The broken lines are those along which the support 60 will be cut for producing a plurality of MMs;
during the manufacturing the layer 64 will be also removed totally or partially, thus allowing the Better material to be exposed to the inner atmosphere of the MM.
In other variations of the support of the invention, the two layers 62 and 64 could not be present together; for example, in the case that the layer of Better material has already features suitable to heating by current flow, the presence of layer 62 can be -avoided, or it is possible to have a support with layer 62 but without the protective layer 64.
Finally, a last embodiment of support according to the invention is shown in cross-section iri Fig. 7. In this case support 70 consists of a base 71 on which a number of local deposits 72, 72', 72", .... of Better material is present; a pair of holes 73, 73' being formed in base 71 is associated with each one of these deposits, for electrically connecting the deposit with the outside. Regions 74, 74', 74", . . . of base 71 are kept free for the construction of the active structures of the miniaturized device and the broken lines again indicate the cutting lines of support 70 for the production of a number of miniaturized devices.
Also in this case the measures described with reference to' Fig. 6 can be adopted, and namely employing a resistive layer between base 71 and deposits 72, 72', 72", ... to improve the heating of these latter deposits; or employing a layer thereon for the temporary protection of the deposits from atmosphere. A
support of type 70 can be employed in manufacturing MMs, but its use is especially preferable in case of microoptoelectronic devices wherein, as mentioned above, the housing portion opposite to that on which the active structures are obtained must be transparent to radiation and thereby cannot house the deposit of Better material over its own whole surface.
It is clear that the embodiments of the device according to the invention as described and illustrated above are only examples susceptibles of many variations.
In particular the precise shape and placement of the mobile or sensor members and of the Better material deposits can freely vary according to the needs, as well as the material employed and the shapes of the housing hollows, which can be formed either on the base or on the cap or partly on both portions.
Another advantage offered by the invention in case the Better deposit is heated directly through passage of electric current (that is, in case no additional layer of kind 42 is present) is that, by means of the same electric contacts (e.g., 18, 18' or 27, 27') it is possible to monitor the residual gas sorption capability of the Better material. The electric resistance of deposits of Better materials is know~i to increase with the amount of oxide, nitride or carbide species formed at the surface of the material; thus, by checking from time to time the value of electric resistance of the Better deposit using the same contacts as probes, and comparing this value with a preset value indicating exhaustion of the Better, it is possible to know when the Better deposit needs reactivation and thus submitting the deposit to a reactivation step only when needed.
Possible additions andlor modifications can thereby be made to the device object of the present invention without departing from the protective scope of the invention.
Claims (16)
1. A micromechanical (10; 20) or microoptoelectronic (30) device comprising a deposit of getter material (17; 25; 35) and integrated members for heating the getter material, said members being connected to said deposit (17;
25;
35) and to the outside of the device, characterized in that said integrated members consist of two electric contacts connected to two opposite ends of the deposit (17;
25; 35) of getter material and, by means of throughholes formed in the device body, electrically connected to the outside of the device; the assembly formed of said electric contacts, throughholes, and getter material deposit being gas-tight.
25;
35) and to the outside of the device, characterized in that said integrated members consist of two electric contacts connected to two opposite ends of the deposit (17;
25; 35) of getter material and, by means of throughholes formed in the device body, electrically connected to the outside of the device; the assembly formed of said electric contacts, throughholes, and getter material deposit being gas-tight.
2. A device according to claim 1, characterized in that said throughholes are filled with metal.
3. A device according to claim 1, characterized in that said integrated members for heating the getter material comprise also an additional layer (42) of a material which can be heated by electric current flow, said additional layer (42) being interposed between the electric contacts and the getter material.
4. A device according to claim 3, characterized in that said additional layer (42) is made of metal or a semiconductor material.
5. A device according to claim 4, characterized in that said additional layer (42) is made of aluminum or polycrystalline silicon.
6. A device according to claim 3, characterized in that said integrated members for heating the getter material also comprise a layer of electrically insulating but thermally conductive material interposed between the additional layer (42) and the getter material deposit.
7. A device according to claim 6, characterized in that said insulating layer is made of silicon dioxide.
8. A device according to claim 1, characterized in that said deposit of getter material is formed with one or more metals selected among zirconium, titanium, niobium, tantalum, vanadium, alloys among these metals, or among these metals and one or more other elements chosen among chromium, manganese, iron, cobalt, nickel, aluminum, yttrium, lanthanum and Rare Earths.
9. A device according to claim 8, wherein said getter material is an alloy chosen among the binary alloys Ti-V, Zr-V, Zr-Fe and Zr-Ni, the ternary alloys Zr-Mn-Fe, Zr-V-Fe or Zr-Co-A, wherein A represents a mixture of yttrium, lanthanum and Rare Earths.
10. A device according to claim 1, wherein said getter material is a mixture between a metallic element selected among zirconium, titanium, niobium, tantalum, vanadium and an alloy among these metals or among these metals and one or more other elements chosen among chromium, manganese, iron, cobalt, nickel, aluminum, yttrium, lanthanum and Rare Earths.
11. A micromechanical device (10) according to claim 1, characterized by the fact of being comprised of a cap (11) wherein a hollow (12) is formed and of a base (13) on which a mobile member (16) is fixed, on the base there being also formed the deposit (17) of getter material, the throughholes (19, 19') and the electric contacts (18, 18').
12. A micromechanical device (20) according to claim 1, characterized by the fact of being comprised of a cap (22) in which a hollow is formed and of a base (21) on which there is fixed a mobile member (24), with the deposit (25) of getter material, the throughholes (26, 26') and the electric contacts (27, 27') being formed on said cap (22).
13. A microoptoelectronic device (30) according to claim 1, characterized by the fact of being comprised of a cap (32) transparent to the electromagnetic radiation and of a base (31) wherein a hollow is formed in which there are placed members (34, .34'...) responsive to electromagnetic radiation and a deposit of getter material (35), with the electric contacts (36, 36') and throughholes being formed on said base (31).
14. A support (50; 70) for manufacturing devices according to claim l, characterized by comprising a base (51; 71) on which there are at least a deposit of getter material (52; 72, 72', 72") and at least a pair of throughholes (54, 54';
73, 73') giving access to two different points of the side of said deposit of getter material facing said base (51; 71).
73, 73') giving access to two different points of the side of said deposit of getter material facing said base (51; 71).
15. A support (60) for manufacturing devices according to claim 3, characterized by comprising a base (61), a layer (62) of a material heatable by current flow overlapping said base (61), a deposit of getter material (63) overlying said layer (62) of heatable material, and at least a pair of throughholes (65, 65') giving access to two different points of the side of said layer (62) of heatable material facing said base (61).
16. A support according to one of claims 14 or 15, characterized by further comprising a layer (64) overlying the deposit of getter material for the temporary protection of said deposit of getter material.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT000069A ITMI20030069A1 (en) | 2003-01-17 | 2003-01-17 | MICROMECHANICAL OR MICROOPTOELECTRONIC DEVICES WITH STORAGE OF GETTER MATERIAL AND INTEGRATED HEATER. |
| ITMI2003A000069 | 2003-01-17 | ||
| PCT/IT2003/000857 WO2004065289A2 (en) | 2003-01-17 | 2003-12-24 | Micromechanical or microoptoelectronic devices with deposit of getter material and integrated heater, and support for the production thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2511836A1 true CA2511836A1 (en) | 2004-08-05 |
Family
ID=32750478
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002511836A Abandoned CA2511836A1 (en) | 2003-01-17 | 2003-12-24 | Micromechanical or microoptoelectronic devices with deposit of getter material and integrated heater, and support for the production thereof |
Country Status (12)
| Country | Link |
|---|---|
| EP (1) | EP1592643A2 (en) |
| JP (1) | JP2006513046A (en) |
| KR (1) | KR20050092426A (en) |
| CN (1) | CN100453442C (en) |
| AU (1) | AU2003295223A1 (en) |
| CA (1) | CA2511836A1 (en) |
| HK (1) | HK1087090A1 (en) |
| IT (1) | ITMI20030069A1 (en) |
| MY (1) | MY157923A (en) |
| NO (1) | NO20053804L (en) |
| TW (1) | TW200500291A (en) |
| WO (1) | WO2004065289A2 (en) |
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|---|---|---|---|---|
| DE102005001449B3 (en) * | 2005-01-12 | 2006-07-20 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | A method for generating a predetermined internal pressure in a cavity of a semiconductor device |
| ITMI20052343A1 (en) * | 2005-12-06 | 2007-06-07 | Getters Spa | PROCESS FOR THE PRODUCTION OF MICROMECHANICAL DEVICES CONTAINING A GETTER MATERIAL AND DEVICES SO MANUFACTURED |
| FR2898597B1 (en) | 2006-03-16 | 2008-09-19 | Commissariat Energie Atomique | ENCAPSULATION IN A HERMETIC CAVITY OF A MICROELECTRONIC COMPOUND, IN PARTICULAR A MEMS |
| FR2903678B1 (en) * | 2006-07-13 | 2008-10-24 | Commissariat Energie Atomique | ENCAPSULATED MICROCOMPONENT EQUIPPED WITH AT LEAST ONE GETTER |
| US7402905B2 (en) * | 2006-08-07 | 2008-07-22 | Honeywell International Inc. | Methods of fabrication of wafer-level vacuum packaged devices |
| ITMI20070301A1 (en) | 2007-02-16 | 2008-08-17 | Getters Spa | SUPPORTS INCLUDING GETTER MATERIALS AND ALKALINE OR ALKALINE-TERROSI METALS FOR THERMOREGULATION SYSTEMS BASED ON TUNNEL EFFECT |
| FR2933389B1 (en) * | 2008-07-01 | 2010-10-29 | Commissariat Energie Atomique | STRUCTURE BASED ON SUSPENDED GETTER MATERIAL |
| JP2010251702A (en) * | 2009-03-27 | 2010-11-04 | Kyocera Corp | Electronic component, package and infrared sensor |
| FR2956521B1 (en) * | 2010-02-16 | 2012-08-17 | Thales Sa | DEVICE COMPRISING ELECTRICAL, ELECTRONIC, ELECTROMECHANICAL OR ELECTRO-OPTICAL COMPONENTS WITH REDUCED SENSITIVITY AT LOW RATE OF DOSE |
| US9491802B2 (en) | 2012-02-17 | 2016-11-08 | Honeywell International Inc. | On-chip alkali dispenser |
| EP2736071B8 (en) | 2012-11-22 | 2017-04-19 | Tronic's Microsystems S.A. | Wafer level package with getter |
| JP6193480B2 (en) * | 2013-05-24 | 2017-09-06 | スナップトラック・インコーポレーテッド | Microelectromechanical system device package and method for manufacturing microelectromechanical system device package |
| EP2813465B1 (en) | 2013-06-12 | 2020-01-15 | Tronic's Microsystems | MEMS device with getter layer |
| FR3008965B1 (en) * | 2013-07-26 | 2017-03-03 | Commissariat Energie Atomique | ENCAPSULATION STRUCTURE COMPRISING A MECHANICALLY REINFORCED HOOD AND GETTER EFFECT |
| CN104743502A (en) * | 2013-12-31 | 2015-07-01 | 北京有色金属研究总院 | MEMS component with composite getter layer and preparation method thereof |
| JP2017224704A (en) | 2016-06-15 | 2017-12-21 | セイコーエプソン株式会社 | Vacuum package, electronic device, electronic equipment, and mobile |
| CN109173690B (en) * | 2018-09-20 | 2020-10-09 | 内蒙古科技大学 | Air consumption agent for metal material heat treatment |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5734226A (en) * | 1992-08-12 | 1998-03-31 | Micron Technology, Inc. | Wire-bonded getters useful in evacuated displays |
| US5610438A (en) * | 1995-03-08 | 1997-03-11 | Texas Instruments Incorporated | Micro-mechanical device with non-evaporable getter |
| US5837935A (en) * | 1996-02-26 | 1998-11-17 | Ford Motor Company | Hermetic seal for an electronic component having a secondary chamber |
| SE9700612D0 (en) * | 1997-02-20 | 1997-02-20 | Cecap Ab | Sensor element with integrated reference pressure |
| US6992375B2 (en) * | 2000-11-30 | 2006-01-31 | Texas Instruments Incorporated | Anchor for device package |
-
2003
- 2003-01-17 IT IT000069A patent/ITMI20030069A1/en unknown
- 2003-12-24 CA CA002511836A patent/CA2511836A1/en not_active Abandoned
- 2003-12-24 JP JP2004567099A patent/JP2006513046A/en active Pending
- 2003-12-24 KR KR1020057013228A patent/KR20050092426A/en not_active Application Discontinuation
- 2003-12-24 EP EP03786227A patent/EP1592643A2/en not_active Withdrawn
- 2003-12-24 AU AU2003295223A patent/AU2003295223A1/en not_active Abandoned
- 2003-12-24 WO PCT/IT2003/000857 patent/WO2004065289A2/en active Application Filing
- 2003-12-24 CN CNB200380108858XA patent/CN100453442C/en not_active Expired - Fee Related
-
2004
- 2004-01-07 TW TW093100361A patent/TW200500291A/en unknown
- 2004-01-15 MY MYPI20040115A patent/MY157923A/en unknown
-
2005
- 2005-08-12 NO NO20053804A patent/NO20053804L/en unknown
-
2006
- 2006-06-28 HK HK06107278.2A patent/HK1087090A1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| ITMI20030069A1 (en) | 2004-07-18 |
| TW200500291A (en) | 2005-01-01 |
| CN1738765A (en) | 2006-02-22 |
| EP1592643A2 (en) | 2005-11-09 |
| HK1087090A1 (en) | 2006-10-06 |
| KR20050092426A (en) | 2005-09-21 |
| WO2004065289A2 (en) | 2004-08-05 |
| NO20053804L (en) | 2005-08-12 |
| MY157923A (en) | 2016-08-15 |
| WO2004065289A3 (en) | 2005-01-06 |
| CN100453442C (en) | 2009-01-21 |
| JP2006513046A (en) | 2006-04-20 |
| AU2003295223A1 (en) | 2004-08-13 |
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| EEER | Examination request | ||
| FZDE | Discontinued |