CN1738765A - Micromechanical or microoptoelectronic devices with deposit of getter material and integrated heater, and support for the production thereof - Google Patents
Micromechanical or microoptoelectronic devices with deposit of getter material and integrated heater, and support for the production thereof Download PDFInfo
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- CN1738765A CN1738765A CNA200380108858XA CN200380108858A CN1738765A CN 1738765 A CN1738765 A CN 1738765A CN A200380108858X A CNA200380108858X A CN A200380108858XA CN 200380108858 A CN200380108858 A CN 200380108858A CN 1738765 A CN1738765 A CN 1738765A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0035—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS
- B81B7/0038—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
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Abstract
Micromechanical (10; 20) or microoptoelectronic (30) devices are described which comprises a deposit of getter material (17; 25; 35) for the sorption of gases being detrimental to the operation of said devices and an integrated system (18, 18', 19, 19') for heating the getter material from the outside at each moment this is required during the life of the device. Various embodiments of a support for manufacturing these devices are also described.
Description
Technical field
The present invention relates to micromachine or microoptoelectronic device, comprise the deposit that is used to adsorb to the gettering material of the harmful gas of the operation of described device, and be used to activate or the integrated heater of deexcitation gettering material at the life period of device itself; The invention still further relates to the support that is particularly suitable for producing these devices.
Background technology
The micromachine device (is comparatively known in the art, be called as " micromachine ", or be abbreviated as MM) be in developing stage, for example be used for small-sized sensor or actuator, the typical example of MM is a micro accelerometer, it is used as the sensor of the airbag that starts automobile, micromotor, it has the gear and the sprocket wheel of several microns sizes, perhaps optical switch, the mirror surface that wherein has the size of tens micron number magnitudes can move between two different positions, thereby light beam is guided into two different directions, direction is corresponding to the on-state of light path, and another direction is corresponding to the blocking state of light path.
Microoptoelectronic device for example comprises infra-red radiation (IR) sensor of a new generation, and they are different with traditional infrared sensor, do not need the temperature of low temperature just can carry out work.These IR sensors by be set at evacuated indoor semi-conducting material for example the sedimental array of silicon constitute.According to the General Definition of miniaturized device, below these devices are called miniaturized device.
Miniaturized device is generally made by the technology that obtains from microelectronics industry, is included in the operation that deposit has different electricity (or magnetic) materials with function on the planar bracket layer, selectively removes these materials then.These devices generally are accommodated in and utilize in the housing that identical technology makes.The most general support is a silicon wafer in the production of these devices, and its thickness is less than about 1mm, and has the diameter that reaches 30cm.On each wafer, make the many devices of numbers of poles, then, when making the processing end, under the situation of MM, utilize machine cuts or laser cutting to cut apart single device from these wafers, perhaps under the situation of IR sensor, be divided into the part that comprises the array that constitutes by tens devices.
The step utilization of deposit different layers for example is commonly referred to as the chemical vapor deposition technology of CVD to be carried out, and perhaps utilizes physical vapor deposit (PVD) to carry out.The latter also is collectively referred to as " sputter ".In general, utilize suitable mask by removing that chemistry or physical etchings are selected, as well known in the art.
In general, MM is encapsulated in container metal or pottery then, mainly is for mechanical protection, could insert final equipment (computer, automobile etc.) then.And the IR radiation sensor generally is included in the chamber, and a wall in the face of the chamber is called as " window ", and radiation is transparent to IR for it.
The function of miniaturized device can be owing to existing unwanted gas to change.In MM, the mechanical friction between gas molecule and moving component because the latter small-sized, can cause the tangible deviation with the ideal operation of device; And polar molecule for example water can cause in moving component and other parts adhesion between its bracket component for example, thereby cause possible device fault.Under the situation of IR sensor, the gas that may exist in the chamber can absorb the part of radiation, perhaps by convection current heat is delivered to the array of siliceous deposits thing from window, thereby changes measurement.Therefore, importantly guarantee the whole life period maintenance vacuum of the housing of these miniaturized device at device.
In order to make the content minimum of the gas in these devices, the manufacturing of these devices is carried out in vacuum chamber usually, carried out pump simultaneously and inhale step before encapsulating.But, fail in this way to deal with problems fully, can discharge gas, perhaps can penetrate gas from outside (for example by welding) because be used to make the material of device.
Enter gas in the solid-state devices in order to remove life period at device, proposed the use gettering material.Gettering material is for example zirconium, titaniums of some metals, vanadium, the alloy of niobium or tantalum or they and other transition metal, rare earth metal or aluminium.These metal or alloy have gentle style such as hydrogen, oxygen, water, the oxide of carbon and to a certain extent and the strong chemical affinity of lower hydrocarbon; Some getter alloys can also absorbed nitrogen.In MM, use gettering material for example in people's such as H.Henmi paper " Vacuum packaging formicrosensors by glass-silicon anodic bonding ", to disclose, this article is published in technical journal Sensors and Actuators A, vol.43 (1994), on the p243-248, and at US5,155,778, US 5,952,572 and US 6,469, disclosed in 821, in the IR sensor, use simultaneously gettering material for example at US 5,921,461 and US 6, disclosed in 252,229.
At the applicant International Patent Application WO 03/009317 and WO03/009318 and patent application US 2003/0138656 under one's name the wafer that uses has been described when making miniaturized device; wherein on wafer, there has been one deck gettering material; it can temporarily be protected, and is being exposed under the internal environment of device during the manufacturing of device.
As everyone knows, gettering material (metal and alloy) is heat-treated with initial activation in order to carry out need of work, by initial activation, remove passivation layer (usually oxide, carbide or the nitride by metal forms) from the surface of material and expose fresh " cleaning " can with the interactional surface of gas.Contain in the known processing of miniaturized device of gettering material in manufacturing, this activation is carried out during the heat treatment of sealing, wherein under the situation that silicon-silicon directly welds, by heating down two parts (generally being made by silicon) are welded to one another together at about 1000 ℃, perhaps between two parts, insert suitable material, for example under the situation of the Au-Si composition of the eutectics of fusing under about 370 ℃, under lower temperature, be welded together.
But, during this was handled, the material that constitutes miniaturized device can discharge the gas that is absorbed by getter.The result makes the activation deficiency of getter, this is because during whole high-temperature process, material is exposed to gas continuously, thereby when processing finishes, its surface not only is made of metallic atom, but also cover by nitrogen oxide, carbide, during heating treatment the quantity of the gas in the environment of getter is many more, and the scope of covering is big more.(big gas load) in the worst case, after to device sealing, getter is in fact invalid.The patent application US 2003/0138656 that quotes has described a kind of wafer; wherein getter layer is temporarily protected by the gold that the extremely thin inert metal of one deck for example at high temperature is diffused into during welding step in the getter, thereby discharges the fresh surface of gettering material.But, in this case, there is not control about the degree of time range or this diffusion, make (thereby in fact can not avoid having the problem of the getter of consumption when processing finishes) may take place prematurely, perhaps the degree of Fa Shenging is too limited, make the free getter that has only limited quantity when finishing, the result makes to have low GAS ABSORPTION activity.
Therefore, need have the getter of making and carry out the reactivation processing, perhaps during the manufacturing step of miniaturized device, getter be remained on the possibility of about 300 ℃ temperature.But, this need heat entire device, and this is unpractiaca basically, and is impossible realize in some cases, because have the danger that destroys device under the activation temperature of getter.
In order to address this problem, patent application US2002/0149096 has proposed a kind of method that is used to make miniaturized device of operating under vacuum, and wherein at the life period of device, getter can at random be heated.According to the instruction of this application, on the substrate of device, provide (machinery or photoelectronic) structure of a kind of activity, also be formed with the deposit of gettering material, when needs, can be by means of the transistor activation that also is integrated in the substrate.
Though this method has overcome the shortcoming of the passive activation in welding step and carried out the initiatively shortcoming of activation by the heating entire device, it relates to suitable complex devices structure.In fact, activation transistor (or other similar semiconductor devices) is formed first on the substrate, may be as various layer overlapping, cover by one deck dielectric material then, this especially may be as various layer overlapping, wherein must be formed for connecting following transistorized opening.Apply layer of conductive material then on dielectric material, it links to each other with transistor by above-mentioned opening, and then directly or by the additional one deck resistance material as heater introduces the activation electric current to the superimposed layer of gettering material.
Obviously, this structure causes quite high manufacturing time and cost, and may cause the inconvenience on the activation step manipulate of gettering material.In fact, need dielectric layer to become bad semiconductor devices with protective transistor or other its performance under about 400 ℃ temperature, this is to carry out the temperature that the getter activation may reach.Provide temperature sensor in addition, when surpassing predetermined threshold value, it can send the signal that stops to activate to the getter heating system.This obviously means increases device cost and complexity.
About processing wherein, all use identical fabrication tool for transistor with gettering material, this may cause pollution by the zirconium or other heavy metal that are included in the getter film, this can change the feature of conductance of other semiconductor layer of different crystal pipe.
At last, will be understood that in order to make this structure, it is impossible using the wafer that is applied with gettering material in advance according to above-mentioned international application, thereby always needs specific manufacturing step to apply gettering material.
Summary of the invention
The objective of the invention is to by a kind of micromachine or microoptoelectronic device with simple structure is provided, wherein can overcome the above-mentioned shortcoming of prior art only at any moment heated getter material of device lifetime.
This purpose realizes by means of a kind of device, described device comprises the deposit of gettering material and is used to heat the integrated component of described gettering material, described parts are the form that electrically contacts by the entire device structure, and directly or by a heater link to each other with gettering material, may provide one deck dielectric material.Other favourable feature has been pointed out in the dependent claims.
Principal advantages according to device of the present invention is, can activate getter at any time during device lifetime, keeps the simple structure of low cost of manufacture simultaneously, and described structure can be made of half-finished element.
Description of drawings
By the detailed description of some embodiment that carry out with reference to the accompanying drawings, those skilled in the art is obviously as can be seen according to this and other the additional advantage and the feature of device of the present invention, wherein:
Fig. 1 represents first embodiment according to miniaturized device of the present invention with sectional view, the situation of expression MM;
Fig. 1 a represents to have the enlarged drawing in zone of device of Fig. 1 of gettering material;
Fig. 2 represents second embodiment according to MM of the present invention with sectional view;
Fig. 3 represents the 3rd embodiment according to miniaturized device of the present invention with sectional view, the situation of expression IR sensor;
Fig. 4 represents to be applied to a kind of remodeling of the above embodiment of the present invention with sectional view;
Fig. 5-7 represents to be used to make some embodiment according to the support of miniaturized device of the present invention with sectional view.
The specific embodiment
At first, wherein show a MM, the integrated heater parts that it comprises gettering material and is used for described gettering material referring to Fig. 1 and 1a.MM10 comprises first 11 (cap), wherein forms recess 12, and second portion 13 (base), and they are welded to each other together along periphery 14, thereby limit an inner space 15.In this space, hold the moveable part of MM, be schematically represented as parts 16 in the drawings; For clarity sake, not shownly when MM is sensor (for example micro accelerometer), be used for to movable member 16 input signals or be used for the signal that parts 16 detect is outputed to outside electric contact.In space 15, also have the deposit 17 of gettering material, be used for therefrom removing gas molecule, these gas molecules may disturb the proper operation of MM.
As shown in Figure 1a, in two opposite ends of deposit 17, two electric contacts 18,18 ' connect by the through hole 19,19 ' that is formed in the base 13.Hole 19,19 ' and deposit 17 must be so constructed, make the air-tightness guarantee structure.For this reason, hole 19,19 ' can be with metal filled, and be exposed to the hole 19 of the outer surface of base 13, metal in 19 ' for example is used to form and the electrical connection of cable (its end for example can be embedded in the metal), perhaps, form according to solution more common in the electronic applications and " track " (for example by serigraphy) of being formed on the conduction on the described outer surface of base 13 and be electrically connected.
Fig. 2 represents another embodiment according to MM of the present invention with sectional view.In this case, MM20 is made up of base 21 that is welded together along periphery and cap 22, thereby limits a space 23.In space 23, on the inner surface of base 21, be formed with the moving part 24 (also not shown in this case be used to make this part and the outside electric contact that links to each other) of MM.
Different with device shown in Figure 1, in this case, on the inner surface of cap 22, form the deposit 25 of gettering material.Deposit 25 links to each other by 26,26 ' and two electric contact in two holes 27,27 ' that is formed in the cap 22, is used for by electric current it being heated.In this case, also dependence utilizes metal filled hole 26,26 ' to guarantee the air-tightness in space 23.The structure of type 20 may be preferred, because to make that all manufacturing steps become not more or less freely there being to form on the surface of other structure deposit 25, and can increase surface that is used for deposit 25 and the efficient of removing gas thereof.
Fig. 3 schematically is illustrated in use of the present invention under the situation of microoptoelectronic device, and under the situation of example, described device is the IR microsensor.Microsensor 30 is made of base 31 and cap 32, and they limit the inner space 33 that will be retained as vacuum, must be removed the gas of any trace that may exist by gettering material in this space.Radiation is transparent to cap 32 for IR, schematically represents described radiation by the fluctuation arrow.On the inside of base 31, form parts 34,34 ' ..., their response IR radiation.Also not shownly in this case be used to make these parts and the outside circuit that links to each other.In the part of the inner surface of the base 31 that does not have sensor element, be formed with the deposit 35 of gettering material, in this case also by means of being formed on hole in the base 31 and electric contact 36,36 ' link to each other (for clarity sake not shown described hole).
Under the situation of microoptoelectronic device, are transparent features in order not influence 32 pairs of IR radiation of cap, can not take structure shown in Figure 2.In any case, can be used for sensor element 34,34 ' so that stay the whole horizontal surface of base 31 gettering material along the peripheral frame of cap 32 or along the vertical wall setting of base 31 ....
In all above-mentioned devices, when the characteristics of Sediments of gettering material makes it can not adopt remodeling of the present invention as shown in Figure 4 when flowing through electric current and heated effectively, Fig. 4 only represents the main element of this remodeling with sectional view.
In this case, the deposit 40 of gettering material is not directly formed on that (it can be an element 11,13 on the base 41, in 21,22,31 or 32 any one), but be formed on the additional layer 42, this layer has the electrical feature that is suitable for utilizing current flow heats.By means of through hole 44,44 ', layer 42 and contact 43,43 ' link to each other, and these contacts link to each other with being connected with reference to the described external electric of Fig. 1 again.
In the unshowned remodeling of another kind, if the gettering material that uses is owing to reason chemistry and/or physics can not directly contact with zone of heating 42, an additional layer then can be provided, described layer electric insulation but heat conduction are (for example, and be inserted between gettering material and the heater 42 silica).
The gettering material that can use in the present invention is miscellaneous, comprises for example Zr of metal, Ti, Nb, Ta, V, the alloy in the middle of these metals, perhaps at these metals with from Cr, Mn, Fe, Co, Ni, Al, the alloy of one or more elements of selecting in the middle of the Y, La and rare earth element.Bianry alloy Ti-V for example, Zr-V, Zr-Fe and Zr-Ni, ternary alloy three-partalloy Zr-Mn-Fe, Zr-V-Fe or Zr-Co-A (wherein A represents mischmetal(l), the mixture of the commerce of yttrium, lanthanum and rare earth element), the mixture of perhaps aforesaid metal and alloy; Because they have mechanical property well, especially consider the loss of particle, these mixtures are preferred.
The deposit of gettering material can utilize multiple technologies to obtain, and is for example cold rolling, if it is not too crisp to form sedimental support thereon, then is possible; Electrophoresis is to be possible under the situation of electric conductor at described support, and can limits deposit by suitable macking technique, wherein utilizes insulating materials as sheltering, and after deposit forms, will shelter and remove; Serigraphy utilizes machinery to shelter the qualification deposit; Perhaps sputtering technology is sequestered in the required zone by means of chemistry in this case and limits described deposit, removes sheltering after deposit forms.For the miniaturized device of several millimeters lateral dimensions, can use all technology of mentioning, and for the device with about 1mm or littler lateral dimension, preferred technology is sputter.
In order to realize purpose of the present invention, getter deposit must be heated under the temperature between about 200 and 400 ℃ by electric current, preferably between about 250 and 350 ℃.Finer and close deposit, for example the deposit that is obtained by sputter can utilize electric current directly to be heated under required temperature.
In contrast, comparatively the deposit of porous for example by the deposit of electrophoresis or serigraphy acquisition, is difficult to utilize electric current directly to heat, and in this case, preferably utilizes the gettering material that is deposited on the extra play with suitable feature, as shown in Figure 4.In this case, extra play 42 can by metal for example aluminium or semi-conducting material for example polysilicon make.Utilize suitable sheltering by means of for example serigraphy, evaporation, electroplating technology or sputter, can obtain metal deposit, these all are widely known by the people in metal level formation field.
According to miniaturized device, can for example metal, pottery, semiconductor or glass manufacturing form the sedimental parts of gettering material thereon with different materials.Preferable material is a silicon, because it allow to use general unusual mature technique in microelectronic now in micromachine or microoptoelectronic device field, the main points of these technology are: form thin layer on a support, and remove these layers partly, partly, thereby obtain to have the structure of very small dimensions in accurate reproducible mode.
Using under the situation of silicon, also utilizing typical technology in microelectronic promptly to utilize the solution that generally comprises fluoride ion to carry out anisotropic etching and obtain to be used for power supply is guided to the deposit of gettering material or the through hole (19,19 ' on the layer 42; 26,26 '; 44,44 ').The speed that silicon dissolves in these solution is very different in the different lattice direction of the monocrystalline of element, makes almost only to carry out etching along the direction of maximum dissolution velocity.Utilize this specific character; produce the hole of accurate dimensions and direction; by means of along with respect to crystallographic axis by the plane cutting silicon chip of appropriate orientation, in the zone that will avoid etching, utilize protective material to shelter described silicon chip, thereby make and only a directed etching to take place in the zone of selecting in advance.
In a second aspect of the present invention, the present invention relates to a kind of support that is used to make micromachine device or microoptoelectronic device, it has the deposit of integrated gettering material and is used to heat described sedimental parts.
Can make by metal, pottery, glass or semi-conducting material according to support of the present invention.Owing to select the importance of semi-conducting material, describe with reference to the semiconductor support below.Described support is silicon wafer preferably, similar with the support of describing among International Patent Application WO 03/009317 and the WO03/009318, but the layer of material that can utilize current flow heats that has provided through hole and electric contact accordingly and contacted with gettering material with the deposit of gettering material thereon.As described in the patent applications cited, the deposit of gettering material can temporarily be protected, and is exposed during the manufacturing of miniaturized device.
Fig. 5 represents a part (dimension scale of various piece particularly thickness illustrates not in scale) according to possible support of the present invention with sectional view.Support 50 by base 51 for example silicon make, be provided with continuous layers of getter material 52 thereon.On the surface 53 of base 51, form many holes 54,54 ' in couples, they make it possible to and layer 52 is realized being electrically connected.In this case, because layer 52 is continuous, this support can be used for the front with reference in the described structure of Fig. 2, and wherein gettering material is present on the part of the MM relative with moving part 24.By support 60 being cut, make many MM by support 50 along the dotted line that on surface 53, illustrates.
Second kind of possible support represented with sectional view in Fig. 6.In this case, support 60 is made up of the different material of many layers, and these materials are in order: base 61 is for example made by silicon, and layer 62 is by making (for example aluminium) by the material that electric current heats easily; Layers of getter material 63; And layer 64, for example make by silica, be used for temporary protection layer 63 and be not subjected to atmospheric effect.In base 61, form pair of holes 65,65 ', they make introduces power supplys with to its heating to layer 62.Can cut support 60 along dotted line and produce a plurality of MM.During manufacture, the internal environment that gettering material is exposed to MM also will be removed, thereby made to layer 64 whole or in part.
In other remodeling of support of the present invention, layer 62 and 64 can not exist simultaneously, for example, has had under the situation about being fit to by the feature of current flow heats at layers of getter material, can save layer 62, perhaps can have the support that has layer 62 and do not have protective layer 64.
At last, show last embodiment at Fig. 7 with sectional view according to support of the present invention.In this case, support 70 comprises base 71, has the deposit 72,72 ', 72 of many parts of gettering material on it " ...; The pair of holes 73,73 ' that on base 71, forms and these sedimental each be associated, be used to make deposit to be connected with external electric.The zone 74,74 ', 74 of base 71 " ... be held empty, be used to constitute the active structure of miniaturized device, thereby dotted line represents to be used to cut the line of cut that support 70 is produced a plurality of miniaturized device once more.
Also can adopt described measure in this case, even be used in base 71 and deposit 72,72 ', 72 with reference to Fig. 6 " ... between resistant layer, to improve the later heating of these deposits; It avoids the influence of atmosphere perhaps to use one deck on deposit to be used for temporary protection.The support of type 70 can be used for making MM, but its use is especially preferred under the situation of microoptoelectronic device, wherein as mentioned above, with the relative housing parts of part that obtains active structure on it must be transparent for radiation, thereby the deposit of gettering material is arranged on its whole surface.
Obviously, aforesaid embodiment according to device of the present invention only is the example that can make many changes.Especially the sedimental accurate shape of movable member or sensor element and gettering material and arrange can be as required and the shape in the space of material that uses and housing and freely changing, described shell space can be formed on base or the cap, perhaps partly is formed on both.
The deposit of gettering material by electric current by direct-fired situation under (promptly not having under the situation of extra play 42) by another advantage provided by the invention be, by means of identical electric contact (for example 18,18 ' or 27,27 '), it can monitor the remaining GAS ABSORPTION ability of gettering material.The sedimental resistance of known gettering material increases with the quantity of the oxide, nitride or the carbon compound that form in its surface, thereby, at any time check the sedimental resistance value of gettering material as probe by using identical contact, and the value that exhausts of more described resistance value and default expression getter, when the deposit that can learn gettering material needs reactivation, thereby have only when needs, just make deposit carry out reactivation.
Do not break away from protection scope of the present invention, can make possible additional and modification device of the present invention.
Claims (16)
1. micromachine device (10; 20) deposit (17 that or microoptoelectronic device (30), comprises gettering material; 25; 35) and be used to heat the integrated component of described gettering material, described parts and described deposit (17; 25; 35) link to each other, and link to each other, it is characterized in that described integrated component is made of two electric contacts, the deposit (17 of they and described gettering material with the outside of device; 25; 35) two opposite ends link to each other, and by means of the through hole that forms in device main body, link to each other with the external electrical of device; The assembly of being made up of the deposit of described electric contact, through hole and gettering material is airtight.
2. device as claimed in claim 1 is characterized in that described through hole is with metal filled.
3. device as claimed in claim 1 is characterized in that, the described integrated component that is used for the heated getter material also comprises the extra play (42) of the material of available current heating, and described extra play (42) is inserted between electric contact and the gettering material.
4. device as claimed in claim 3 is characterized in that, described extra play (42) is made by metal or semi-conducting material.
5. device as claimed in claim 4 is characterized in that, described extra play (42) is made by aluminium or polysilicon.
6. device as claimed in claim 3 is characterized in that, the described integrated component that is used for the heated getter material also comprises the still material layer of heat conduction of the electric insulation between the deposit that is inserted in described extra play (42) and described gettering material.
7. device as claimed in claim 6 is characterized in that described insulating barrier is made by silica.
8. device as claimed in claim 1, it is characterized in that one or more other elements that the deposit of described gettering material is selected when neutralization by the alloy in the middle of one or more metals of selecting, these metals or these metals are formed from chromium, manganese, iron, cobalt, nickel, aluminium, yttrium, lanthanum and rare earth element in the middle of zirconium, titanium, niobium, tantalum, vanadium.
9. device as claimed in claim 8 is characterized in that, described gettering material is from bianry alloy Ti-V, Zr-V, the alloy of selecting in the middle of Zr-Fe and Zr-Ni, the ternary alloy three-partalloy Zr-Mn-Fe, Zr-V-Fe or Zr-Co-A, wherein A represents the mixture of yttrium, lanthanum and rare earth element.
10. device as claimed in claim 1, it is characterized in that described gettering material is mixture between the metallic element of selecting and the alloy in the middle of these metals or one or more other elements of selecting from chromium, manganese, iron, cobalt, nickel, aluminium, yttrium, lanthanum and rare earth metal when neutralization at these metals in the middle of zirconium, titanium, niobium, tantalum, vanadium.
11. device as claimed in claim 1 (10), it is characterized in that, comprise cap (11), wherein be formed with space (12), also comprise base (13), be fixed with movable member (16) on it, on base, also be formed with deposit (17), the through hole (19 of gettering material, 19 ') and electric contact (18,18 ').
12. device as claimed in claim 1 (20), it is characterized in that, comprise cap (22), wherein be formed with the space, also comprise base (21), be fixed with movable member (24) on it, the deposit of gettering material (25), through hole (26,26 ') and electric contact (27,27 ') be formed on the described cap (22).
13. device as claimed in claim 1 (30), it is characterized in that, comprise for the transparent cap of electromagnetic radiation (32), also comprise base (31), wherein be formed with the space, in described space, be provided with the parts (34,34 ') of response electromagnetic radiation and the deposit (35) of gettering material, electric contact (36,36 ') and through hole are formed on the described base (31).
14. support (50 that is used to make device as claimed in claim 1; 70), it is characterized in that, comprise base (51; 71) deposit (52 that, has at least one gettering material thereon; 72,72 ', 72 ") and at least one pair of through hole (54,54 '; 73,73 '), make entering surface to described base (51; Two different points of the sedimental sidepiece of described gettering material 71).
15. support (60) that is used to make device as claimed in claim 3, it is characterized in that, comprise base (61), cover on the described base (61) can be by the material layer (62) of current flow heats, cover the deposit (63) of the gettering material on the described heatable material layer (62), and at least one pair of through hole (65,65 '), make it possible to two the different points of entering surface to the sidepiece of the described heatable material layer (62) of described base (61).
16., it is characterized in that as claim 14 or 15 described supports, also comprise the layer (64) on the deposit that covers described gettering material, be used for the deposit of the described gettering material of temporary protection.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT000069A ITMI20030069A1 (en) | 2003-01-17 | 2003-01-17 | MICROMECHANICAL OR MICROOPTOELECTRONIC DEVICES WITH STORAGE OF GETTER MATERIAL AND INTEGRATED HEATER. |
| ITMI2003A000069 | 2003-01-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1738765A true CN1738765A (en) | 2006-02-22 |
| CN100453442C CN100453442C (en) | 2009-01-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB200380108858XA Expired - Fee Related CN100453442C (en) | 2003-01-17 | 2003-12-24 | Micromechanical or microoptoelectronic devices with deposit of getter material and integrated heater, and support for the production thereof |
Country Status (12)
| Country | Link |
|---|---|
| EP (1) | EP1592643A2 (en) |
| JP (1) | JP2006513046A (en) |
| KR (1) | KR20050092426A (en) |
| CN (1) | CN100453442C (en) |
| AU (1) | AU2003295223A1 (en) |
| CA (1) | CA2511836A1 (en) |
| HK (1) | HK1087090A1 (en) |
| IT (1) | ITMI20030069A1 (en) |
| MY (1) | MY157923A (en) |
| NO (1) | NO20053804L (en) |
| TW (1) | TW200500291A (en) |
| WO (1) | WO2004065289A2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104340948A (en) * | 2013-07-26 | 2015-02-11 | 原子能和替代能源委员会 | Encapsulation structure including a mechanically reinforced cap and with a getter effect |
| CN104743502A (en) * | 2013-12-31 | 2015-07-01 | 北京有色金属研究总院 | MEMS component with composite getter layer and preparation method thereof |
| CN109173690A (en) * | 2018-09-20 | 2019-01-11 | 内蒙古科技大学 | A kind of air consumption agent in metal material heat treatment |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005001449B3 (en) * | 2005-01-12 | 2006-07-20 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | A method for generating a predetermined internal pressure in a cavity of a semiconductor device |
| ITMI20052343A1 (en) * | 2005-12-06 | 2007-06-07 | Getters Spa | PROCESS FOR THE PRODUCTION OF MICROMECHANICAL DEVICES CONTAINING A GETTER MATERIAL AND DEVICES SO MANUFACTURED |
| FR2898597B1 (en) | 2006-03-16 | 2008-09-19 | Commissariat Energie Atomique | ENCAPSULATION IN A HERMETIC CAVITY OF A MICROELECTRONIC COMPOUND, IN PARTICULAR A MEMS |
| FR2903678B1 (en) * | 2006-07-13 | 2008-10-24 | Commissariat Energie Atomique | ENCAPSULATED MICROCOMPONENT EQUIPPED WITH AT LEAST ONE GETTER |
| US7402905B2 (en) * | 2006-08-07 | 2008-07-22 | Honeywell International Inc. | Methods of fabrication of wafer-level vacuum packaged devices |
| ITMI20070301A1 (en) | 2007-02-16 | 2008-08-17 | Getters Spa | SUPPORTS INCLUDING GETTER MATERIALS AND ALKALINE OR ALKALINE-TERROSI METALS FOR THERMOREGULATION SYSTEMS BASED ON TUNNEL EFFECT |
| FR2933389B1 (en) | 2008-07-01 | 2010-10-29 | Commissariat Energie Atomique | STRUCTURE BASED ON SUSPENDED GETTER MATERIAL |
| JP2010251702A (en) * | 2009-03-27 | 2010-11-04 | Kyocera Corp | Electronic component, package and infrared sensor |
| FR2956521B1 (en) * | 2010-02-16 | 2012-08-17 | Thales Sa | DEVICE COMPRISING ELECTRICAL, ELECTRONIC, ELECTROMECHANICAL OR ELECTRO-OPTICAL COMPONENTS WITH REDUCED SENSITIVITY AT LOW RATE OF DOSE |
| US9491802B2 (en) | 2012-02-17 | 2016-11-08 | Honeywell International Inc. | On-chip alkali dispenser |
| EP2736071B8 (en) | 2012-11-22 | 2017-04-19 | Tronic's Microsystems S.A. | Wafer level package with getter |
| US9479138B2 (en) | 2013-05-24 | 2016-10-25 | Epcos Ag | Microelectromechanical systems device package and method for producing the microelectromechanical systems device package |
| EP2813465B1 (en) | 2013-06-12 | 2020-01-15 | Tronic's Microsystems | MEMS device with getter layer |
| JP2017224704A (en) | 2016-06-15 | 2017-12-21 | セイコーエプソン株式会社 | Vacuum package, electronic device, electronic equipment, and mobile |
| CN114057156A (en) * | 2021-12-21 | 2022-02-18 | 罕王微电子（辽宁）有限公司 | Metal diffusion adsorption system and process for wafer-level MEMS vacuum packaging |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5734226A (en) * | 1992-08-12 | 1998-03-31 | Micron Technology, Inc. | Wire-bonded getters useful in evacuated displays |
| US5610438A (en) * | 1995-03-08 | 1997-03-11 | Texas Instruments Incorporated | Micro-mechanical device with non-evaporable getter |
| US5837935A (en) * | 1996-02-26 | 1998-11-17 | Ford Motor Company | Hermetic seal for an electronic component having a secondary chamber |
| SE9700612D0 (en) * | 1997-02-20 | 1997-02-20 | Cecap Ab | Sensor element with integrated reference pressure |
| US6992375B2 (en) * | 2000-11-30 | 2006-01-31 | Texas Instruments Incorporated | Anchor for device package |
-
2003
- 2003-01-17 IT IT000069A patent/ITMI20030069A1/en unknown
- 2003-12-24 WO PCT/IT2003/000857 patent/WO2004065289A2/en active Application Filing
- 2003-12-24 KR KR1020057013228A patent/KR20050092426A/en not_active Application Discontinuation
- 2003-12-24 CN CNB200380108858XA patent/CN100453442C/en not_active Expired - Fee Related
- 2003-12-24 AU AU2003295223A patent/AU2003295223A1/en not_active Abandoned
- 2003-12-24 JP JP2004567099A patent/JP2006513046A/en active Pending
- 2003-12-24 EP EP03786227A patent/EP1592643A2/en not_active Withdrawn
- 2003-12-24 CA CA002511836A patent/CA2511836A1/en not_active Abandoned
-
2004
- 2004-01-07 TW TW093100361A patent/TW200500291A/en unknown
- 2004-01-15 MY MYPI20040115A patent/MY157923A/en unknown
-
2005
- 2005-08-12 NO NO20053804A patent/NO20053804L/en unknown
-
2006
- 2006-06-28 HK HK06107278.2A patent/HK1087090A1/en not_active IP Right Cessation
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104340948A (en) * | 2013-07-26 | 2015-02-11 | 原子能和替代能源委员会 | Encapsulation structure including a mechanically reinforced cap and with a getter effect |
| CN104340948B (en) * | 2013-07-26 | 2018-02-27 | 原子能和替代能源委员会 | Strengthen covering and having the encapsulating structure of gettering effect including machinery |
| CN104743502A (en) * | 2013-12-31 | 2015-07-01 | 北京有色金属研究总院 | MEMS component with composite getter layer and preparation method thereof |
| CN109173690A (en) * | 2018-09-20 | 2019-01-11 | 内蒙古科技大学 | A kind of air consumption agent in metal material heat treatment |
| CN109173690B (en) * | 2018-09-20 | 2020-10-09 | 内蒙古科技大学 | Air consumption agent for metal material heat treatment |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20050092426A (en) | 2005-09-21 |
| TW200500291A (en) | 2005-01-01 |
| WO2004065289A2 (en) | 2004-08-05 |
| AU2003295223A1 (en) | 2004-08-13 |
| CN100453442C (en) | 2009-01-21 |
| JP2006513046A (en) | 2006-04-20 |
| NO20053804L (en) | 2005-08-12 |
| WO2004065289A3 (en) | 2005-01-06 |
| EP1592643A2 (en) | 2005-11-09 |
| MY157923A (en) | 2016-08-15 |
| CA2511836A1 (en) | 2004-08-05 |
| HK1087090A1 (en) | 2006-10-06 |
| ITMI20030069A1 (en) | 2004-07-18 |
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