BE841241A - Enceinte de reaction pour le depot de silicium elementaire - Google Patents

Enceinte de reaction pour le depot de silicium elementaire

Info

Publication number
BE841241A
BE841241A BE166537A BE166537A BE841241A BE 841241 A BE841241 A BE 841241A BE 166537 A BE166537 A BE 166537A BE 166537 A BE166537 A BE 166537A BE 841241 A BE841241 A BE 841241A
Authority
BE
Belgium
Prior art keywords
reaction vessel
silicon deposit
elementary silicon
elementary
deposit
Prior art date
Application number
BE166537A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE841241A publication Critical patent/BE841241A/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)
  • Radiation Pyrometers (AREA)
BE166537A 1975-04-28 1976-04-28 Enceinte de reaction pour le depot de silicium elementaire BE841241A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2518853A DE2518853C3 (de) 1975-04-28 1975-04-28 Vorrichtung zum Abscheiden von elementarem Silicium aus einem Reaktionsgas

Publications (1)

Publication Number Publication Date
BE841241A true BE841241A (fr) 1976-08-16

Family

ID=5945200

Family Applications (1)

Application Number Title Priority Date Filing Date
BE166537A BE841241A (fr) 1975-04-28 1976-04-28 Enceinte de reaction pour le depot de silicium elementaire

Country Status (5)

Country Link
US (1) US4023520A (fr)
JP (1) JPS594374B2 (fr)
BE (1) BE841241A (fr)
DE (1) DE2518853C3 (fr)
IT (1) IT1059985B (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2743950A1 (de) * 1977-09-29 1979-04-12 Siemens Ag Verfahren und vorrichtung zum abscheiden von halbleitermaterial
DE2743856A1 (de) * 1977-09-29 1979-04-12 Siemens Ag Verfahren und vorrichtung zum abscheiden von halbleitermaterial
DE2854707C2 (de) * 1978-12-18 1985-08-14 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Vorrichtung zur thermischen Zersetzung gasförmiger Verbindungen und ihre Verwendung
DE3342586C2 (de) * 1982-11-27 1986-08-28 Toshiba Kikai K.K., Tokio/Tokyo Vorrichtung zur Gasphasen-Epitaxie
US6165311A (en) * 1991-06-27 2000-12-26 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna
JP5205910B2 (ja) * 2006-10-31 2013-06-05 三菱マテリアル株式会社 トリクロロシラン製造装置
JP5059665B2 (ja) * 2008-03-14 2012-10-24 株式会社トクヤマ シリコン製造装置
KR20100139092A (ko) * 2008-03-26 2010-12-31 지티 솔라 인코퍼레이티드 금-코팅된 폴리실리콘 반응기 시스템 및 방법
RU2499081C2 (ru) * 2008-03-26 2013-11-20 ДжиТиЭйТи Корпорейшн Системы и способы распределения газа в реакторе для химического осаждения из паровой фазы
DE102009010086B4 (de) * 2009-01-29 2013-04-11 Centrotherm Sitec Gmbh Anordnung und Verfahren zur Messung der Temperatur und des Dickenwachstums von Siliziumstäben in einem Silizium-Abscheidereaktor
US8540818B2 (en) * 2009-04-28 2013-09-24 Mitsubishi Materials Corporation Polycrystalline silicon reactor
NO334785B1 (no) * 2009-05-29 2014-05-26 Dynatec Engineering As Reaktor og fremgangsmåte for fremstilling av silisium
DE102009035952A1 (de) * 2009-08-03 2011-02-10 Graeber Engineering Consultants Gmbh Flansch für ein CVD-Reaktorgehäuse, Verwendung einer Kamera bei einem CVD-Verfahren sowie CVD-Verfahren zur Erzeugung von Siliziumstangen
KR101115697B1 (ko) * 2009-12-02 2012-03-06 웅진폴리실리콘주식회사 에너지 효율을 높여주는 복사열 차단막을 갖는 화학기상증착 반응기
DE102011077455B4 (de) * 2011-06-14 2014-02-06 Wacker Chemie Ag Verfahren zur Bestimmung von Verunreinigungen in Silicium und Reaktor zur Abscheidung von polykristallinem Silicium
JP6984018B2 (ja) * 2017-12-05 2021-12-17 ワッカー ケミー アクチエンゲゼルシャフトWacker Chemie AG 表面温度を決定する方法
WO2020234401A1 (fr) * 2019-05-21 2020-11-26 Wacker Chemie Ag Procédé de production de silicium polycristallin

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3367303A (en) * 1963-05-29 1968-02-06 Monsanto Co Chemical equipment
DE1244733B (de) * 1963-11-05 1967-07-20 Siemens Ag Vorrichtung zum Aufwachsen einkristalliner Halbleitermaterialschichten auf einkristallinen Grundkoerpern
DE1229986B (de) * 1964-07-21 1966-12-08 Siemens Ag Vorrichtung zur Gewinnung reinen Halbleiter-materials
US3372671A (en) * 1965-05-26 1968-03-12 Westinghouse Electric Corp Apparatus for producing vapor growth of silicon crystals
DE1521494B1 (de) * 1966-02-25 1970-11-26 Siemens Ag Vorrichtung zum Eindiffundieren von Fremdstoffen in Halbleiterkoerper
DE2033444C3 (de) * 1970-07-06 1979-02-15 Siemens Ag Vorrichtung zum Eindiffundieren von Dotierstoffen in Scheiben aus Halbleitermaterial
DE2050076C3 (de) * 1970-10-12 1980-06-26 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum Herstellen von Rohren aus Halbleitermaterial
DE2113720C3 (de) * 1971-03-22 1980-09-11 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Durchmesserregelung beim tiegellosen Zonenschmelzen von Halbleiterstäben
US3820935A (en) * 1971-10-04 1974-06-28 Siemens Ag Method and device for the production of tubular members of silicon
DE2324365C3 (de) * 1973-05-14 1978-05-11 Siemens Ag, 1000 Berlin Und 8000 Muenchen Reaktionsgefäß zum Abscheiden von Halbleitermaterial auf erhitzte Trägerkörper
BE817066R (fr) * 1973-11-29 1974-10-16 Enceinte de reaction pour le depot de matiere semi-concuctrice sur des corps de support chauffes

Also Published As

Publication number Publication date
DE2518853A1 (de) 1976-11-04
US4023520A (en) 1977-05-17
JPS51131429A (en) 1976-11-15
DE2518853B2 (de) 1978-07-20
IT1059985B (it) 1982-06-21
DE2518853C3 (de) 1979-03-22
JPS594374B2 (ja) 1984-01-30

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: SIEMENS A.G.

Effective date: 19850428