WO2008078500A1 - 成膜装置および成膜方法 - Google Patents

成膜装置および成膜方法 Download PDF

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Publication number
WO2008078500A1
WO2008078500A1 PCT/JP2007/073069 JP2007073069W WO2008078500A1 WO 2008078500 A1 WO2008078500 A1 WO 2008078500A1 JP 2007073069 W JP2007073069 W JP 2007073069W WO 2008078500 A1 WO2008078500 A1 WO 2008078500A1
Authority
WO
WIPO (PCT)
Prior art keywords
film deposition
substrate
film
coil
deposition apparatus
Prior art date
Application number
PCT/JP2007/073069
Other languages
English (en)
French (fr)
Inventor
Eisuke Morisaki
Hirokatsu Kobayashi
Jun Yoshikawa
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Priority to US12/521,179 priority Critical patent/US8440270B2/en
Priority to EP07832784.8A priority patent/EP2101345B1/en
Publication of WO2008078500A1 publication Critical patent/WO2008078500A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/10—Induction heating apparatus, other than furnaces, for specific applications
    • H05B6/105—Induction heating apparatus, other than furnaces, for specific applications using a susceptor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/06—Control, e.g. of temperature, of power

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

　開示する成膜装置は、減圧空間とされる内部に成膜ガスが供給される処理容器と、減圧空間に設置される、基板を保持する基板保持部と、基板保持部を誘導加熱することで成膜ガスによる成膜を基板上に生じさせる、複数の領域に分割されたコイルと、コイルを、複数の領域ごとに制御するコイル制御部と、を有する。
PCT/JP2007/073069 2006-12-25 2007-11-29 成膜装置および成膜方法 WO2008078500A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/521,179 US8440270B2 (en) 2006-12-25 2007-11-29 Film deposition apparatus and method
EP07832784.8A EP2101345B1 (en) 2006-12-25 2007-11-29 Film deposition apparatus and film deposition method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006348456A JP5202839B2 (ja) 2006-12-25 2006-12-25 成膜装置および成膜方法
JP2006-348456 2006-12-25

Publications (1)

Publication Number Publication Date
WO2008078500A1 true WO2008078500A1 (ja) 2008-07-03

Family

ID=39562294

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/073069 WO2008078500A1 (ja) 2006-12-25 2007-11-29 成膜装置および成膜方法

Country Status (5)

Country Link
US (1) US8440270B2 (ja)
EP (1) EP2101345B1 (ja)
JP (1) JP5202839B2 (ja)
TW (1) TWI438828B (ja)
WO (1) WO2008078500A1 (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5202839B2 (ja) * 2006-12-25 2013-06-05 東京エレクトロン株式会社 成膜装置および成膜方法
JP5051875B2 (ja) * 2006-12-25 2012-10-17 東京エレクトロン株式会社 成膜装置および成膜方法
JP2010272550A (ja) * 2009-05-19 2010-12-02 Sumitomo Electric Ind Ltd サセプタ
CN103628039A (zh) * 2012-08-28 2014-03-12 北京北方微电子基地设备工艺研究中心有限责任公司 Mocvd反应腔及mocvd设备
US9527109B2 (en) * 2013-06-05 2016-12-27 General Electric Company Coating process and coated article
JP6158025B2 (ja) * 2013-10-02 2017-07-05 株式会社ニューフレアテクノロジー 成膜装置及び成膜方法
JP6635871B2 (ja) * 2016-05-11 2020-01-29 東京エレクトロン株式会社 成膜装置
EP3635768A4 (en) 2017-05-10 2021-02-24 McMahon, Shane Thomas THIN LAYER CRYSTALLIZATION PROCESS
CN115537768B (zh) * 2022-12-01 2023-07-07 浙江晶越半导体有限公司 一种碳化硅化学气相沉积方法及多热源水平壁热式反应器

Citations (5)

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JPH09232275A (ja) 1996-02-20 1997-09-05 Komatsu Electron Metals Co Ltd エピタキシャル成長装置サセプターのクリーニング 装置とその方法
JPH10183353A (ja) * 1996-08-07 1998-07-14 Concept Syst Design Inc Ｃｖｄリアクタ用ガス注入システム及びガス注入方法
JP2004241302A (ja) * 2003-02-07 2004-08-26 Mitsui Eng & Shipbuild Co Ltd 半導体製造装置の温度制御方法
JP2004323900A (ja) 2003-04-24 2004-11-18 Sumitomo Mitsubishi Silicon Corp エピタキシャルウェーハの製造装置およびエピタキシャルウェーハの製造方法
JP2006348458A (ja) 2005-05-18 2006-12-28 Neue Classe:Kk 上着

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DE19603323A1 (de) * 1996-01-30 1997-08-07 Siemens Ag Verfahren und Vorrichtung zum Herstellen von SiC durch CVD mit verbesserter Gasausnutzung
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JP5202839B2 (ja) * 2006-12-25 2013-06-05 東京エレクトロン株式会社 成膜装置および成膜方法
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JP5138212B2 (ja) * 2006-12-25 2013-02-06 東京エレクトロン株式会社 成膜装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09232275A (ja) 1996-02-20 1997-09-05 Komatsu Electron Metals Co Ltd エピタキシャル成長装置サセプターのクリーニング 装置とその方法
JPH10183353A (ja) * 1996-08-07 1998-07-14 Concept Syst Design Inc Ｃｖｄリアクタ用ガス注入システム及びガス注入方法
JP2004241302A (ja) * 2003-02-07 2004-08-26 Mitsui Eng & Shipbuild Co Ltd 半導体製造装置の温度制御方法
JP2004323900A (ja) 2003-04-24 2004-11-18 Sumitomo Mitsubishi Silicon Corp エピタキシャルウェーハの製造装置およびエピタキシャルウェーハの製造方法
JP2006348458A (ja) 2005-05-18 2006-12-28 Neue Classe:Kk 上着

Non-Patent Citations (1)

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Title
See also references of EP2101345A4 *

Also Published As

Publication number Publication date
JP5202839B2 (ja) 2013-06-05
EP2101345B1 (en) 2015-09-09
JP2008159943A (ja) 2008-07-10
TW200847243A (en) 2008-12-01
US8440270B2 (en) 2013-05-14
EP2101345A1 (en) 2009-09-16
US20100015359A1 (en) 2010-01-21
TWI438828B (zh) 2014-05-21
EP2101345A4 (en) 2011-03-02

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