WO2009117565A3 - Method and apparatus of a substrate etching system and process - Google Patents
Method and apparatus of a substrate etching system and process Download PDFInfo
- Publication number
- WO2009117565A3 WO2009117565A3 PCT/US2009/037647 US2009037647W WO2009117565A3 WO 2009117565 A3 WO2009117565 A3 WO 2009117565A3 US 2009037647 W US2009037647 W US 2009037647W WO 2009117565 A3 WO2009117565 A3 WO 2009117565A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- gas
- substrate during
- chamber
- etching
- etch process
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 8
- 239000000758 substrate Substances 0.000 title abstract 7
- 238000005530 etching Methods 0.000 title abstract 4
- 239000007789 gas Substances 0.000 abstract 8
- 238000000151 deposition Methods 0.000 abstract 1
- 238000005137 deposition process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/0318—Processes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8593—Systems
- Y10T137/87169—Supply and exhaust
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011500951A JP5608157B2 (en) | 2008-03-21 | 2009-03-19 | Substrate etching system and process method and apparatus |
CN2009801103642A CN101978479A (en) | 2008-03-21 | 2009-03-19 | Method and apparatus of a substrate etching system and process |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US3866408P | 2008-03-21 | 2008-03-21 | |
US61/038,664 | 2008-03-21 | ||
US4057008P | 2008-03-28 | 2008-03-28 | |
US61/040,570 | 2008-03-28 | ||
US9482008P | 2008-09-05 | 2008-09-05 | |
US61/094,820 | 2008-09-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2009117565A2 WO2009117565A2 (en) | 2009-09-24 |
WO2009117565A3 true WO2009117565A3 (en) | 2009-11-12 |
Family
ID=41091536
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2009/037647 WO2009117565A2 (en) | 2008-03-21 | 2009-03-19 | Method and apparatus of a substrate etching system and process |
Country Status (6)
Country | Link |
---|---|
US (1) | US20090272717A1 (en) |
JP (1) | JP5608157B2 (en) |
KR (1) | KR20100128333A (en) |
CN (2) | CN102446739B (en) |
TW (1) | TWI538045B (en) |
WO (1) | WO2009117565A2 (en) |
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CN102473634B (en) * | 2009-08-20 | 2015-02-18 | 东京毅力科创株式会社 | Plasma treatment device and plasma treatment method |
US8501629B2 (en) * | 2009-12-23 | 2013-08-06 | Applied Materials, Inc. | Smooth SiConi etch for silicon-containing films |
US8133349B1 (en) | 2010-11-03 | 2012-03-13 | Lam Research Corporation | Rapid and uniform gas switching for a plasma etch process |
US9305810B2 (en) | 2011-06-30 | 2016-04-05 | Applied Materials, Inc. | Method and apparatus for fast gas exchange, fast gas switching, and programmable gas delivery |
US9023227B2 (en) | 2011-06-30 | 2015-05-05 | Applied Materials, Inc. | Increased deposition efficiency and higher chamber conductance with source power increase in an inductively coupled plasma (ICP) chamber |
CN103159163B (en) * | 2011-12-19 | 2016-06-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Substrate lithographic method and substrate processing equipment |
US9679751B2 (en) | 2012-03-15 | 2017-06-13 | Lam Research Corporation | Chamber filler kit for plasma etch chamber useful for fast gas switching |
US20130255784A1 (en) * | 2012-03-30 | 2013-10-03 | Applied Materials, Inc. | Gas delivery systems and methods of use thereof |
US9887095B2 (en) | 2013-03-12 | 2018-02-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | System and method for an etch process with silicon concentration control |
US9488315B2 (en) * | 2013-03-15 | 2016-11-08 | Applied Materials, Inc. | Gas distribution apparatus for directional and proportional delivery of process gas to a process chamber |
JP6101227B2 (en) * | 2014-03-17 | 2017-03-22 | 株式会社東芝 | Plasma dicing method and plasma dicing apparatus |
US10100407B2 (en) * | 2014-12-19 | 2018-10-16 | Lam Research Corporation | Hardware and process for film uniformity improvement |
TW201634738A (en) * | 2015-01-22 | 2016-10-01 | 應用材料股份有限公司 | Improved injector for spatially separated atomic layer deposition chamber |
TWI701357B (en) * | 2015-03-17 | 2020-08-11 | 美商應用材料股份有限公司 | Pulsed plasma for film deposition |
JP6444794B2 (en) * | 2015-03-30 | 2018-12-26 | Sppテクノロジーズ株式会社 | Semiconductor device manufacturing method and plasma etching apparatus used for manufacturing the same |
US10957561B2 (en) * | 2015-07-30 | 2021-03-23 | Lam Research Corporation | Gas delivery system |
US10192751B2 (en) | 2015-10-15 | 2019-01-29 | Lam Research Corporation | Systems and methods for ultrahigh selective nitride etch |
US10825659B2 (en) * | 2016-01-07 | 2020-11-03 | Lam Research Corporation | Substrate processing chamber including multiple gas injection points and dual injector |
US10256075B2 (en) * | 2016-01-22 | 2019-04-09 | Applied Materials, Inc. | Gas splitting by time average injection into different zones by fast gas valves |
US10651015B2 (en) | 2016-02-12 | 2020-05-12 | Lam Research Corporation | Variable depth edge ring for etch uniformity control |
US10147588B2 (en) | 2016-02-12 | 2018-12-04 | Lam Research Corporation | System and method for increasing electron density levels in a plasma of a substrate processing system |
US10699878B2 (en) | 2016-02-12 | 2020-06-30 | Lam Research Corporation | Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring |
US10438833B2 (en) | 2016-02-16 | 2019-10-08 | Lam Research Corporation | Wafer lift ring system for wafer transfer |
JP6392266B2 (en) * | 2016-03-22 | 2018-09-19 | 東京エレクトロン株式会社 | Plasma processing method and plasma processing apparatus |
JP6541596B2 (en) * | 2016-03-22 | 2019-07-10 | 東京エレクトロン株式会社 | Plasma treatment method |
JP6378234B2 (en) * | 2016-03-22 | 2018-08-22 | 東京エレクトロン株式会社 | Plasma processing method and plasma processing apparatus |
US10410832B2 (en) | 2016-08-19 | 2019-09-10 | Lam Research Corporation | Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment |
KR20210011380A (en) * | 2018-05-22 | 2021-02-01 | 이티엑스 코포레이션 | Method and apparatus for delivery of two-dimensional materials |
JP7218226B2 (en) * | 2019-03-22 | 2023-02-06 | 株式会社アルバック | Plasma etching method |
US20210118734A1 (en) * | 2019-10-22 | 2021-04-22 | Semiconductor Components Industries, Llc | Plasma-singulated, contaminant-reduced semiconductor die |
US11342195B1 (en) | 2021-02-04 | 2022-05-24 | Tokyo Electron Limited | Methods for anisotropic etch of silicon-based materials with selectivity to organic materials |
US11940819B1 (en) * | 2023-01-20 | 2024-03-26 | Applied Materials, Inc. | Mass flow controller based fast gas exchange |
Citations (3)
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US20040045669A1 (en) * | 2002-02-06 | 2004-03-11 | Tomohiro Okumura | Plasma processing method and apparatus |
US20060118518A1 (en) * | 2003-08-22 | 2006-06-08 | Lam Research Corporation | High aspect ratio etch using modulation of RF powers of various frequencies |
KR100655445B1 (en) * | 2005-10-04 | 2006-12-08 | 삼성전자주식회사 | Apparatus and method for treating plasma, and facility for manufacturing semiconductor devices |
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JPS62143427A (en) * | 1985-12-18 | 1987-06-26 | Hitachi Ltd | Processing gas feeder |
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US6507155B1 (en) * | 2000-04-06 | 2003-01-14 | Applied Materials Inc. | Inductively coupled plasma source with controllable power deposition |
US6685798B1 (en) * | 2000-07-06 | 2004-02-03 | Applied Materials, Inc | Plasma reactor having a symmetrical parallel conductor coil antenna |
US6409933B1 (en) * | 2000-07-06 | 2002-06-25 | Applied Materials, Inc. | Plasma reactor having a symmetric parallel conductor coil antenna |
US6462481B1 (en) * | 2000-07-06 | 2002-10-08 | Applied Materials Inc. | Plasma reactor having a symmetric parallel conductor coil antenna |
US6694915B1 (en) * | 2000-07-06 | 2004-02-24 | Applied Materials, Inc | Plasma reactor having a symmetrical parallel conductor coil antenna |
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US6846746B2 (en) * | 2002-05-01 | 2005-01-25 | Applied Materials, Inc. | Method of smoothing a trench sidewall after a deep trench silicon etch process |
FR2842387B1 (en) * | 2002-07-11 | 2005-07-08 | Cit Alcatel | HEATING SHIELD FOR PLASMA ENGRAVING REACTOR, ETCHING METHOD FOR ITS IMPLEMENTATION |
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US6924235B2 (en) * | 2002-08-16 | 2005-08-02 | Unaxis Usa Inc. | Sidewall smoothing in high aspect ratio/deep etching using a discrete gas switching method |
US6900133B2 (en) * | 2002-09-18 | 2005-05-31 | Applied Materials, Inc | Method of etching variable depth features in a crystalline substrate |
US20040097077A1 (en) * | 2002-11-15 | 2004-05-20 | Applied Materials, Inc. | Method and apparatus for etching a deep trench |
US20040157457A1 (en) * | 2003-02-12 | 2004-08-12 | Songlin Xu | Methods of using polymer films to form micro-structures |
US7405521B2 (en) * | 2003-08-22 | 2008-07-29 | Lam Research Corporation | Multiple frequency plasma processor method and apparatus |
KR100549204B1 (en) * | 2003-10-14 | 2006-02-02 | 주식회사 리드시스템 | Method for anisotropically etching silicon |
US20050112891A1 (en) * | 2003-10-21 | 2005-05-26 | David Johnson | Notch-free etching of high aspect SOI structures using a time division multiplex process and RF bias modulation |
JP4593402B2 (en) * | 2005-08-25 | 2010-12-08 | 株式会社日立ハイテクノロジーズ | Etching method and etching apparatus |
US8088248B2 (en) * | 2006-01-11 | 2012-01-03 | Lam Research Corporation | Gas switching section including valves having different flow coefficients for gas distribution system |
JP2008205436A (en) * | 2007-01-26 | 2008-09-04 | Toshiba Corp | Method of manufacturing fine structure |
JP2009182059A (en) * | 2008-01-29 | 2009-08-13 | Toshiba Corp | Dry etching method |
-
2009
- 2009-03-19 WO PCT/US2009/037647 patent/WO2009117565A2/en active Application Filing
- 2009-03-19 US US12/407,548 patent/US20090272717A1/en not_active Abandoned
- 2009-03-19 CN CN201110402772.4A patent/CN102446739B/en active Active
- 2009-03-19 JP JP2011500951A patent/JP5608157B2/en active Active
- 2009-03-19 CN CN2009801103642A patent/CN101978479A/en active Pending
- 2009-03-19 KR KR1020107023432A patent/KR20100128333A/en not_active Application Discontinuation
- 2009-03-20 TW TW098109255A patent/TWI538045B/en active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040045669A1 (en) * | 2002-02-06 | 2004-03-11 | Tomohiro Okumura | Plasma processing method and apparatus |
US20060118518A1 (en) * | 2003-08-22 | 2006-06-08 | Lam Research Corporation | High aspect ratio etch using modulation of RF powers of various frequencies |
KR100655445B1 (en) * | 2005-10-04 | 2006-12-08 | 삼성전자주식회사 | Apparatus and method for treating plasma, and facility for manufacturing semiconductor devices |
Also Published As
Publication number | Publication date |
---|---|
CN102446739B (en) | 2016-01-20 |
WO2009117565A2 (en) | 2009-09-24 |
TW201005822A (en) | 2010-02-01 |
KR20100128333A (en) | 2010-12-07 |
JP5608157B2 (en) | 2014-10-15 |
US20090272717A1 (en) | 2009-11-05 |
CN101978479A (en) | 2011-02-16 |
JP2011515855A (en) | 2011-05-19 |
TWI538045B (en) | 2016-06-11 |
CN102446739A (en) | 2012-05-09 |
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