WO2009117565A3 - Method and apparatus of a substrate etching system and process - Google Patents

Method and apparatus of a substrate etching system and process Download PDF

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Publication number
WO2009117565A3
WO2009117565A3 PCT/US2009/037647 US2009037647W WO2009117565A3 WO 2009117565 A3 WO2009117565 A3 WO 2009117565A3 US 2009037647 W US2009037647 W US 2009037647W WO 2009117565 A3 WO2009117565 A3 WO 2009117565A3
Authority
WO
WIPO (PCT)
Prior art keywords
gas
substrate during
chamber
etching
etch process
Prior art date
Application number
PCT/US2009/037647
Other languages
French (fr)
Other versions
WO2009117565A2 (en
Inventor
Sharma V. Pamarthy
Jon C. Farr
Khalid Sirajuddin
Ezra R. Gold
James P. Cruse
Scott Olszewski
Roy C. Nangoy
Saravjeet Singh
Douglas A. Buchberger
Jared A. Lee
Chunlei Zhang
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to CN2009801103642A priority Critical patent/CN101978479A/en
Priority to JP2011500951A priority patent/JP5608157B2/en
Publication of WO2009117565A2 publication Critical patent/WO2009117565A2/en
Publication of WO2009117565A3 publication Critical patent/WO2009117565A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/0318—Processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/87169—Supply and exhaust

Abstract

Embodiments of the invention relate to a substrate etching system and process. In one embodiment, a method may include depositing material on the substrate during a deposition process, etching a first layer of the substrate during a first etch process, and etching a second layer of the substrate during a second etch process, wherein a first bias power is applied to the substrate during the first process, and wherein a second bias power is applied to the substrate during the second etch process. In another embodiment, a system may include a gas delivery system containing a first gas panel for supplying a first gas to a chamber, a second gas panel for supplying a second gas to the chamber, and a plurality of flow controllers for directing the gases to the chamber to facilitate rapid gas transitioning between the gases to and from the chamber and the panels.
PCT/US2009/037647 2008-03-21 2009-03-19 Method and apparatus of a substrate etching system and process WO2009117565A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2009801103642A CN101978479A (en) 2008-03-21 2009-03-19 Method and apparatus of a substrate etching system and process
JP2011500951A JP5608157B2 (en) 2008-03-21 2009-03-19 Substrate etching system and process method and apparatus

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US3866408P 2008-03-21 2008-03-21
US61/038,664 2008-03-21
US4057008P 2008-03-28 2008-03-28
US61/040,570 2008-03-28
US9482008P 2008-09-05 2008-09-05
US61/094,820 2008-09-05

Publications (2)

Publication Number Publication Date
WO2009117565A2 WO2009117565A2 (en) 2009-09-24
WO2009117565A3 true WO2009117565A3 (en) 2009-11-12

Family

ID=41091536

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/037647 WO2009117565A2 (en) 2008-03-21 2009-03-19 Method and apparatus of a substrate etching system and process

Country Status (6)

Country Link
US (1) US20090272717A1 (en)
JP (1) JP5608157B2 (en)
KR (1) KR20100128333A (en)
CN (2) CN102446739B (en)
TW (1) TWI538045B (en)
WO (1) WO2009117565A2 (en)

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US9887095B2 (en) 2013-03-12 2018-02-06 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for an etch process with silicon concentration control
US9488315B2 (en) * 2013-03-15 2016-11-08 Applied Materials, Inc. Gas distribution apparatus for directional and proportional delivery of process gas to a process chamber
JP6101227B2 (en) * 2014-03-17 2017-03-22 株式会社東芝 Plasma dicing method and plasma dicing apparatus
US10100407B2 (en) * 2014-12-19 2018-10-16 Lam Research Corporation Hardware and process for film uniformity improvement
TW201634738A (en) * 2015-01-22 2016-10-01 應用材料股份有限公司 Improved injector for spatially separated atomic layer deposition chamber
TWI701357B (en) * 2015-03-17 2020-08-11 美商應用材料股份有限公司 Pulsed plasma for film deposition
JP6444794B2 (en) * 2015-03-30 2018-12-26 Ｓｐｐテクノロジーズ株式会社 Semiconductor device manufacturing method and plasma etching apparatus used for manufacturing the same
US10957561B2 (en) * 2015-07-30 2021-03-23 Lam Research Corporation Gas delivery system
US10192751B2 (en) 2015-10-15 2019-01-29 Lam Research Corporation Systems and methods for ultrahigh selective nitride etch
US10825659B2 (en) * 2016-01-07 2020-11-03 Lam Research Corporation Substrate processing chamber including multiple gas injection points and dual injector
US10256075B2 (en) 2016-01-22 2019-04-09 Applied Materials, Inc. Gas splitting by time average injection into different zones by fast gas valves
US10651015B2 (en) 2016-02-12 2020-05-12 Lam Research Corporation Variable depth edge ring for etch uniformity control
US10147588B2 (en) 2016-02-12 2018-12-04 Lam Research Corporation System and method for increasing electron density levels in a plasma of a substrate processing system
US10699878B2 (en) 2016-02-12 2020-06-30 Lam Research Corporation Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring
US10438833B2 (en) 2016-02-16 2019-10-08 Lam Research Corporation Wafer lift ring system for wafer transfer
JP6378234B2 (en) * 2016-03-22 2018-08-22 東京エレクトロン株式会社 Plasma processing method and plasma processing apparatus
JP6541596B2 (en) * 2016-03-22 2019-07-10 東京エレクトロン株式会社 Plasma treatment method
JP6392266B2 (en) * 2016-03-22 2018-09-19 東京エレクトロン株式会社 Plasma processing method and plasma processing apparatus
US10410832B2 (en) 2016-08-19 2019-09-10 Lam Research Corporation Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment
JP7401458B2 (en) * 2018-05-22 2023-12-19 イーティーエックス コーポレーション Method and apparatus for transferring two-dimensional materials
JP7218226B2 (en) * 2019-03-22 2023-02-06 株式会社アルバック Plasma etching method
US20210118734A1 (en) * 2019-10-22 2021-04-22 Semiconductor Components Industries, Llc Plasma-singulated, contaminant-reduced semiconductor die
US11342195B1 (en) 2021-02-04 2022-05-24 Tokyo Electron Limited Methods for anisotropic etch of silicon-based materials with selectivity to organic materials
US11940819B1 (en) * 2023-01-20 2024-03-26 Applied Materials, Inc. Mass flow controller based fast gas exchange

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Also Published As

Publication number Publication date
CN101978479A (en) 2011-02-16
TW201005822A (en) 2010-02-01
WO2009117565A2 (en) 2009-09-24
CN102446739A (en) 2012-05-09
CN102446739B (en) 2016-01-20
JP5608157B2 (en) 2014-10-15
KR20100128333A (en) 2010-12-07
JP2011515855A (en) 2011-05-19
US20090272717A1 (en) 2009-11-05
TWI538045B (en) 2016-06-11

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