JP2011515855A5 - - Google Patents

Claims (14)

(A) depositing a protective layer on the first layer disposed on the substrate in the etching reactor;
(B) This protective layer is etched in an etching reactor, and during the etching of the protective layer, a first bias power is applied,
(C) etching the first layer in an etching reactor, during the etching of the first layer, a second bias power is applied, the first bias power is greater than the second bias power;
A method of etching a substrate in a chamber comprising forming a profile in the substrate by repeating (A), (B) and (C).   The method of claim 1, wherein the first bias power includes a high frequency range of about 2 MHz to about 13.56 MHz, and the second bias power includes a high frequency range of about 100 kHz to about 400 kHz.   The method of claim 1, further comprising pulsing at least one of the first bias power and the second bias power within a duty cycle range of about 2% to about 40%.   The method according to claim 1, wherein the protective layer is a polymer film, and the first layer includes at least one of metal and silicon. Depositing a polymer film on the substrate during the deposition process,
Etching the polymer film deposited on the substrate during the first etching process;
Forming a profile in the substrate by etching the substrate during the second etching process;
A method of etching a substrate in a chamber in which a first bias power is applied to the substrate during a first process and a second bias power is applied to the substrate during a second etching process. The method of claim 5 , wherein the substrate comprises a plurality of layers comprising at least one of silicon, oxide and metal. The method of claim 5 , wherein the first bias power is greater than the second bias power. 6. The method of claim 5 , further comprising pulsing at least one of the first bias power and the second bias power. A chamber for processing a substrate;
A first gas panel in communication with the chamber by a first gas delivery line including a plurality of first flow controllers;
A second gas panel in communication with the chamber by a second gas delivery line including a plurality of second flow controllers;
The plurality of first and second flow controllers can selectively direct gas from the first and second panels to one or more exhausts in communication with the chamber and the first and second gas delivery lines, respectively. Possible gas delivery system. Supplying a first gas into the chamber from a first gas panel through a first gas delivery line;
Directing the second gas through the second gas delivery line from the second gas panel to the discharge section while supplying the first gas to the chamber;
Directing a first gas to an exhaust and supplying a second gas to the chamber;
Prior to introducing the second gas into the chamber, the first gas is supplied to the chamber with the gas removed from the chamber. The method of claim 10 , further comprising a first flow controller in communication with a first gas delivery line for directing a first gas from the first gas panel to the chamber. The method of claim 11 , further comprising actuating the first flow controller to direct the first gas from the first gas panel to the outlet. The method of claim 10 , further comprising a second flow controller in communication with a second gas delivery line for directing second gas from the second gas panel to the discharge. 14. The method of claim 13 , further comprising actuating the second flow controller to direct the second gas from the second gas panel to the chamber.