WO2012096466A3 - 박막 증착 장치 및 이를 포함한 기판 처리 시스템 - Google Patents
박막 증착 장치 및 이를 포함한 기판 처리 시스템 Download PDFInfo
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- WO2012096466A3 WO2012096466A3 PCT/KR2012/000039 KR2012000039W WO2012096466A3 WO 2012096466 A3 WO2012096466 A3 WO 2012096466A3 KR 2012000039 W KR2012000039 W KR 2012000039W WO 2012096466 A3 WO2012096466 A3 WO 2012096466A3
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- susceptor
- thin film
- deposition apparatus
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67346—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders characterized by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S901/00—Robots
- Y10S901/30—End effector
- Y10S901/41—Tool
- Y10S901/43—Spray painting or coating
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
박막 증착 장치는 증착 챔버와, 서셉터와, 회전기구와, 승강 부재, 및 승강 구동유닛을 포함한다. 증착 챔버는 증착 공정이 행해지는 내부 공간을 갖는다. 서셉터는 증착 챔버 내에 설치되며, 상면에 복수의 기판들이 안착된다. 회전기구는 서셉터를 회전 동작시킨다. 승강 부재는 서셉터 상부에 구비되어 서셉터 상에 안착된 기판들의 각 변부를 일부 지지하며, 승강 구동시 서셉터로부터 기판들을 분리시키거나 서셉터로 기판들을 안착시킨다. 승강 구동유닛은 승강 부재를 승강시킨다.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/979,462 US20130291798A1 (en) | 2011-01-14 | 2012-01-03 | Thin film deposition apparatus and substrate treatment system including the same |
CN201280004521.3A CN103283014B (zh) | 2011-01-14 | 2012-01-03 | 薄膜蒸镀装置以及包含此的基板处理系统 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110004213A KR101685150B1 (ko) | 2011-01-14 | 2011-01-14 | 박막 증착 장치 및 이를 포함한 기판 처리 시스템 |
KR10-2011-0004213 | 2011-01-14 |
Publications (2)
Publication Number | Publication Date |
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WO2012096466A2 WO2012096466A2 (ko) | 2012-07-19 |
WO2012096466A3 true WO2012096466A3 (ko) | 2012-10-18 |
Family
ID=46507540
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2012/000039 WO2012096466A2 (ko) | 2011-01-14 | 2012-01-03 | 박막 증착 장치 및 이를 포함한 기판 처리 시스템 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20130291798A1 (ko) |
KR (1) | KR101685150B1 (ko) |
CN (1) | CN103283014B (ko) |
TW (1) | TWI488259B (ko) |
WO (1) | WO2012096466A2 (ko) |
Families Citing this family (24)
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KR101372333B1 (ko) * | 2012-02-16 | 2014-03-14 | 주식회사 유진테크 | 기판 처리 모듈 및 이를 포함하는 기판 처리 장치 |
JP6263017B2 (ja) * | 2013-12-16 | 2018-01-17 | 川崎重工業株式会社 | 基板位置合わせ装置及び基板位置合わせ装置の制御方法 |
TWI650832B (zh) | 2013-12-26 | 2019-02-11 | 維克儀器公司 | 用於化學氣相沉積系統之具有隔熱蓋的晶圓載具 |
CN104752302B (zh) * | 2013-12-30 | 2018-05-08 | 北京北方华创微电子装备有限公司 | 一种基座支撑结构以及腔室 |
SG11201606084RA (en) | 2014-01-27 | 2016-08-30 | Veeco Instr Inc | Wafer carrier having retention pockets with compound radii for chemical vapor deposition systems |
KR20150101906A (ko) * | 2014-02-27 | 2015-09-04 | (주)브이앤아이솔루션 | 얼라이너 구조 및 얼라인 방법 |
WO2015130138A1 (ko) * | 2014-02-27 | 2015-09-03 | (주)브이앤아이솔루션 | 얼라이너 구조 및 얼라인 방법 |
KR101653644B1 (ko) * | 2014-06-02 | 2016-09-02 | (주)티티에스 | 웨이퍼 증착 디스크와 그의 이송 자동화 시스템 |
JP6363927B2 (ja) * | 2014-10-07 | 2018-07-25 | 大陽日酸株式会社 | 気相成長装置における基板搬送方法及び装置 |
KR101722915B1 (ko) * | 2014-10-13 | 2017-04-04 | 주식회사 테스 | 유기금속화학기상증착장치 |
US10418269B2 (en) * | 2015-12-04 | 2019-09-17 | Lam Research Corporation | Storing and organizing minimum contact area features and wafer transfer pins during system maintenance |
KR102411077B1 (ko) * | 2016-06-07 | 2022-06-17 | 어플라이드 머티어리얼스, 인코포레이티드 | 웨이퍼 균일성을 위한 윤곽 포켓 및 하이브리드 서셉터 |
KR102125512B1 (ko) * | 2016-10-18 | 2020-06-23 | 주식회사 원익아이피에스 | 기판 처리 장치 및 기판 처리 방법 |
DE102017101648A1 (de) | 2017-01-27 | 2018-08-02 | Aixtron Se | Transportring |
CN110536976B (zh) * | 2017-01-27 | 2022-03-15 | 艾克斯特朗欧洲公司 | 运输环 |
USD860146S1 (en) | 2017-11-30 | 2019-09-17 | Veeco Instruments Inc. | Wafer carrier with a 33-pocket configuration |
USD858469S1 (en) | 2018-03-26 | 2019-09-03 | Veeco Instruments Inc. | Chemical vapor deposition wafer carrier with thermal cover |
USD860147S1 (en) | 2018-03-26 | 2019-09-17 | Veeco Instruments Inc. | Chemical vapor deposition wafer carrier with thermal cover |
USD854506S1 (en) | 2018-03-26 | 2019-07-23 | Veeco Instruments Inc. | Chemical vapor deposition wafer carrier with thermal cover |
USD863239S1 (en) | 2018-03-26 | 2019-10-15 | Veeco Instruments Inc. | Chemical vapor deposition wafer carrier with thermal cover |
USD866491S1 (en) | 2018-03-26 | 2019-11-12 | Veeco Instruments Inc. | Chemical vapor deposition wafer carrier with thermal cover |
CN108461442A (zh) * | 2018-03-27 | 2018-08-28 | 武汉华星光电技术有限公司 | 用于承载基板的承载装置及具有该承载装置的热退火设备 |
JP7048433B2 (ja) * | 2018-06-22 | 2022-04-05 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
CN112736016B (zh) * | 2020-12-31 | 2024-04-19 | 拓荆科技股份有限公司 | 晶圆中转承载装置 |
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2011
- 2011-01-14 KR KR1020110004213A patent/KR101685150B1/ko active IP Right Grant
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2012
- 2012-01-03 US US13/979,462 patent/US20130291798A1/en not_active Abandoned
- 2012-01-03 WO PCT/KR2012/000039 patent/WO2012096466A2/ko active Application Filing
- 2012-01-03 CN CN201280004521.3A patent/CN103283014B/zh not_active Expired - Fee Related
- 2012-01-13 TW TW101101493A patent/TWI488259B/zh not_active IP Right Cessation
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KR20040103714A (ko) * | 2003-06-02 | 2004-12-09 | 주성엔지니어링(주) | 기판의 로딩 장치 및 이를 이용한 기판의 로딩 방법 |
KR20090086786A (ko) * | 2008-02-11 | 2009-08-14 | (주)소슬 | 기판처리장치 |
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US20130291798A1 (en) | 2013-11-07 |
KR20120082747A (ko) | 2012-07-24 |
WO2012096466A2 (ko) | 2012-07-19 |
TW201230244A (en) | 2012-07-16 |
CN103283014A (zh) | 2013-09-04 |
CN103283014B (zh) | 2016-01-13 |
KR101685150B1 (ko) | 2016-12-09 |
TWI488259B (zh) | 2015-06-11 |
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