TW200609940A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
TW200609940A
TW200609940A TW094115789A TW94115789A TW200609940A TW 200609940 A TW200609940 A TW 200609940A TW 094115789 A TW094115789 A TW 094115789A TW 94115789 A TW94115789 A TW 94115789A TW 200609940 A TW200609940 A TW 200609940A
Authority
TW
Taiwan
Prior art keywords
power supply
lines
integrated circuit
semiconductor integrated
bit lines
Prior art date
Application number
TW094115789A
Other languages
English (en)
Other versions
TWI397070B (zh
Inventor
Masanao Yamaoka
Koji Nii
Original Assignee
Renesas Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Tech Corp filed Critical Renesas Tech Corp
Publication of TW200609940A publication Critical patent/TW200609940A/zh
Application granted granted Critical
Publication of TWI397070B publication Critical patent/TWI397070B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
TW94115789A 2004-09-15 2005-05-16 半導體積體電路裝置 TWI397070B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004267645A JP4553185B2 (ja) 2004-09-15 2004-09-15 半導体集積回路装置

Publications (2)

Publication Number Publication Date
TW200609940A true TW200609940A (en) 2006-03-16
TWI397070B TWI397070B (zh) 2013-05-21

Family

ID=36033731

Family Applications (3)

Application Number Title Priority Date Filing Date
TW94115789A TWI397070B (zh) 2004-09-15 2005-05-16 半導體積體電路裝置
TW101147444A TWI576838B (zh) 2004-09-15 2005-05-16 半導體積體電路裝置
TW105102684A TW201619961A (zh) 2004-09-15 2005-05-16 半導體積體電路裝置

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW101147444A TWI576838B (zh) 2004-09-15 2005-05-16 半導體積體電路裝置
TW105102684A TW201619961A (zh) 2004-09-15 2005-05-16 半導體積體電路裝置

Country Status (5)

Country Link
US (8) US7113421B2 (zh)
JP (1) JP4553185B2 (zh)
KR (1) KR101168340B1 (zh)
CN (2) CN101866686B (zh)
TW (3) TWI397070B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104347110A (zh) * 2013-08-05 2015-02-11 瑞萨电子株式会社 半导体存储器件
TWI634644B (zh) * 2011-07-26 2018-09-01 瑞薩電子股份有限公司 半導體裝置

Families Citing this family (101)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7425841B2 (en) 2004-02-14 2008-09-16 Tabula Inc. Configurable circuits, IC's, and systems
US7167025B1 (en) 2004-02-14 2007-01-23 Herman Schmit Non-sequentially configurable IC
JP4553185B2 (ja) 2004-09-15 2010-09-29 ルネサスエレクトロニクス株式会社 半導体集積回路装置
US7317331B2 (en) 2004-11-08 2008-01-08 Tabula, Inc. Reconfigurable IC that has sections running at different reconfiguration rates
US7330050B2 (en) 2004-11-08 2008-02-12 Tabula, Inc. Storage elements for a configurable IC and method and apparatus for accessing data stored in the storage elements
US7236009B1 (en) 2004-12-01 2007-06-26 Andre Rohe Operational time extension
US7230869B1 (en) * 2005-03-15 2007-06-12 Jason Redgrave Method and apparatus for accessing contents of memory cells
US7272031B1 (en) * 2005-03-15 2007-09-18 Tabula, Inc. Method and apparatus for reduced power cell
JP4912016B2 (ja) 2005-05-23 2012-04-04 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP5100035B2 (ja) * 2005-08-02 2012-12-19 ルネサスエレクトロニクス株式会社 半導体記憶装置
US7372297B1 (en) 2005-11-07 2008-05-13 Tabula Inc. Hybrid interconnect/logic circuits enabling efficient replication of a function in several sub-cycles to save logic and routing resources
TWI266338B (en) * 2005-12-01 2006-11-11 Via Tech Inc Output circuit of SRAM
US7679401B1 (en) 2005-12-01 2010-03-16 Tabula, Inc. User registers implemented with routing circuits in a configurable IC
JP2007172715A (ja) * 2005-12-20 2007-07-05 Fujitsu Ltd 半導体記憶装置およびその制御方法
US7669097B1 (en) 2006-03-27 2010-02-23 Tabula, Inc. Configurable IC with error detection and correction circuitry
US7292495B1 (en) * 2006-06-29 2007-11-06 Freescale Semiconductor, Inc. Integrated circuit having a memory with low voltage read/write operation
US7793172B2 (en) * 2006-09-28 2010-09-07 Freescale Semiconductor, Inc. Controlled reliability in an integrated circuit
US7492627B2 (en) * 2006-11-17 2009-02-17 Freescale Semiconductor, Inc. Memory with increased write margin bitcells
JP2008227171A (ja) * 2007-03-13 2008-09-25 Toshiba Corp 不揮発性半導体メモリ
US7525344B2 (en) 2007-03-20 2009-04-28 Tabula, Inc. Configurable IC having a routing fabric with storage elements
US7610566B1 (en) 2007-03-22 2009-10-27 Tabula, Inc. Method and apparatus for function decomposition
US8248101B2 (en) 2007-09-06 2012-08-21 Tabula, Inc. Reading configuration data from internal storage node of configuration storage circuit
JP2009070474A (ja) 2007-09-13 2009-04-02 Panasonic Corp 半導体集積回路
US7688656B2 (en) * 2007-10-22 2010-03-30 Freescale Semiconductor, Inc. Integrated circuit memory having dynamically adjustable read margin and method therefor
US7613052B2 (en) * 2007-11-01 2009-11-03 Arm Limited Memory device and method of operating such a memory device
US8863067B1 (en) 2008-02-06 2014-10-14 Tabula, Inc. Sequential delay analysis by placement engines
US7643357B2 (en) * 2008-02-18 2010-01-05 International Business Machines Corporation System and method for integrating dynamic leakage reduction with write-assisted SRAM architecture
JP2009289784A (ja) * 2008-05-27 2009-12-10 Nec Electronics Corp 半導体集積回路装置
JP2009289308A (ja) * 2008-05-28 2009-12-10 Toshiba Corp 半導体記憶装置
US8166435B2 (en) * 2008-06-26 2012-04-24 Tabula, Inc. Timing operations in an IC with configurable circuits
US8164969B2 (en) * 2008-07-01 2012-04-24 Jeng-Jye Shau Ultra-low power hybrid circuits
US7782655B2 (en) * 2008-07-01 2010-08-24 Jeng-Jye Shau Ultra-low power hybrid sub-threshold circuits
JPWO2010013449A1 (ja) * 2008-08-01 2012-01-05 パナソニック株式会社 半導体記憶装置
JP5197241B2 (ja) * 2008-09-01 2013-05-15 ルネサスエレクトロニクス株式会社 半導体装置
US8243541B2 (en) * 2008-12-19 2012-08-14 Oracle America, Inc. Methods and apparatuses for improving reduced power operations in embedded memory arrays
US8045402B2 (en) * 2009-06-29 2011-10-25 Arm Limited Assisting write operations to data storage cells
JP4857367B2 (ja) * 2009-07-06 2012-01-18 株式会社沖データ 駆動回路及び画像形成装置
JP5317900B2 (ja) 2009-09-14 2013-10-16 ルネサスエレクトロニクス株式会社 半導体集積回路およびその動作方法
KR101034616B1 (ko) * 2009-11-30 2011-05-12 주식회사 하이닉스반도체 센스앰프 및 반도체 메모리장치
JP5596335B2 (ja) * 2009-12-24 2014-09-24 ルネサスエレクトロニクス株式会社 半導体装置
KR20190034696A (ko) 2009-12-25 2019-04-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 메모리 장치, 반도체 장치, 및 전자 장치
JP5380332B2 (ja) 2010-03-02 2014-01-08 ルネサスエレクトロニクス株式会社 半導体装置及びデータプロセッサ
US8218376B2 (en) * 2010-04-21 2012-07-10 Texas Instruments Incorporated Reduced power consumption in retain-till-accessed static memories
US20120008419A1 (en) * 2010-07-09 2012-01-12 Ha Joo Yun Semiconductor memory device and method of operating the same
KR101192583B1 (ko) 2010-10-28 2012-10-18 삼성디스플레이 주식회사 액정 표시 패널, 액정 표시 장치 및 액정 표시 장치의 구동 방법
US8451652B2 (en) * 2010-12-02 2013-05-28 Lsi Corporation Write assist static random access memory cell
US8867278B2 (en) * 2011-02-28 2014-10-21 Samsung Electronics Co., Ltd. Nonvolatile memory device, memory system including the same, and method of operating nonvolatile memory device
CN102290099B (zh) * 2011-07-04 2016-04-06 上海华虹宏力半导体制造有限公司 Sram存储器及其形成方法
JP5932257B2 (ja) * 2011-07-14 2016-06-08 エスアイアイ・セミコンダクタ株式会社 メモリ回路
JP5777991B2 (ja) * 2011-09-22 2015-09-16 ルネサスエレクトロニクス株式会社 半導体装置
JP6099368B2 (ja) 2011-11-25 2017-03-22 株式会社半導体エネルギー研究所 記憶装置
WO2013084385A1 (ja) 2011-12-08 2013-06-13 パナソニック株式会社 半導体記憶装置
WO2013100982A1 (en) * 2011-12-28 2013-07-04 Intel Corporation Apparatus and method for improving power delivery in a memory, such as, a random access memory
JP5867091B2 (ja) * 2012-01-10 2016-02-24 株式会社ソシオネクスト 半導体記憶装置及びその書き込み方法
US8559251B2 (en) * 2012-01-20 2013-10-15 Taiwan Semiconductor Manufacturing Company, Ltd. Memory circuit and method of writing datum to memory circuit
SG11201504940RA (en) 2012-01-23 2015-07-30 Semiconductor Energy Lab Semiconductor device
JP5465266B2 (ja) * 2012-02-21 2014-04-09 ルネサスエレクトロニクス株式会社 半導体記憶装置
US8654594B2 (en) 2012-02-23 2014-02-18 International Business Machines Corporation Vdiff max limiter in SRAMs for improved yield and power
CN102568564B (zh) * 2012-02-29 2014-03-12 福州大学 基于负微分电阻特性的混合set/cmos静态存储单元
GB2500907B (en) * 2012-04-04 2016-05-25 Platipus Ltd Static random access memory devices
JP5962185B2 (ja) * 2012-04-27 2016-08-03 株式会社ソシオネクスト 半導体記憶装置およびその制御方法
US8837205B2 (en) * 2012-05-30 2014-09-16 Freescale Semiconductor, Inc. Multi-port register file with multiplexed data
US9153304B2 (en) 2012-06-28 2015-10-06 Jaydeep P. Kulkarni Apparatus for reducing write minimum supply voltage for memory
CN102723110B (zh) * 2012-07-12 2015-06-24 苏州兆芯半导体科技有限公司 一种写余量控制电路
JP5784558B2 (ja) * 2012-08-14 2015-09-24 株式会社東芝 半導体記憶装置
US9218881B2 (en) * 2012-10-23 2015-12-22 Sandisk Technologies Inc. Flash memory blocks with extended data retention
US8953401B2 (en) 2012-12-07 2015-02-10 United Microelectronics Corp. Memory device and method for driving memory array thereof
KR20140146481A (ko) * 2013-06-17 2014-12-26 에스케이하이닉스 주식회사 컬럼디코더
US9105355B2 (en) * 2013-07-04 2015-08-11 United Microelectronics Corporation Memory cell array operated with multiple operation voltage
TWI562163B (en) * 2013-07-04 2016-12-11 United Microelectronics Corp Memory cell array
US9515076B2 (en) * 2013-08-06 2016-12-06 Renesas Electronics Corporation Semiconductor integrated circuit device
CN104851453B (zh) * 2014-02-18 2018-05-18 辉达公司 用于低功率sram的写入辅助方案
JP6353668B2 (ja) 2014-03-03 2018-07-04 ルネサスエレクトロニクス株式会社 半導体記憶装置
US9916874B2 (en) 2014-08-15 2018-03-13 Taiwan Semiconductor Manufacturing Company, Ltd. Memory architecture having first and second voltages
JP5917738B2 (ja) * 2015-02-24 2016-05-18 ルネサスエレクトロニクス株式会社 半導体装置および半導体チップ
KR20170027493A (ko) * 2015-09-02 2017-03-10 에스케이하이닉스 주식회사 반도체 장치의 레이아웃 구조
US9997235B2 (en) * 2015-12-17 2018-06-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor memory with respective power voltages for plurality of memory cells
US9865605B2 (en) 2016-01-14 2018-01-09 Taiwan Semiconductor Manufacturing Company, Ltd. Memory circuit having resistive device coupled with supply voltage line
KR102493815B1 (ko) * 2016-01-29 2023-02-01 삼성전자주식회사 선택적으로 절연 기능을 수행하는 반도체 소자 및 그 레이아웃 배치 방법
US10199092B2 (en) * 2016-06-21 2019-02-05 Arm Limited Boost circuit for memory
US9922701B2 (en) 2016-08-08 2018-03-20 Taiwan Semiconductor Manufacturing Company Limited Pre-charging bit lines through charge-sharing
KR20180065073A (ko) 2016-12-06 2018-06-18 삼성전자주식회사 균일한 쓰기 특성을 갖는 에스램 장치
KR102646847B1 (ko) * 2016-12-07 2024-03-12 삼성전자주식회사 반도체 메모리 장치, 반도체 메모리 장치의 동작 방법 및 메모리 시스템
JP2018206452A (ja) * 2017-05-30 2018-12-27 ルネサスエレクトロニクス株式会社 内容参照メモリ及び半導体装置
JP2019046514A (ja) * 2017-08-29 2019-03-22 東芝メモリ株式会社 半導体記憶装置
CN110097907B (zh) * 2018-01-29 2021-03-19 展讯通信（上海）有限公司 Sram存储器
JP2018142397A (ja) * 2018-06-20 2018-09-13 ルネサスエレクトロニクス株式会社 半導体装置
CN110867201B (zh) * 2018-08-27 2022-03-25 龙芯中科技术股份有限公司 存储单元及多端口静态随机存储器
CN109584928B (zh) * 2018-11-30 2021-07-23 中国科学院微电子研究所 一种用于静态随机存储器的写辅助电路以及写辅助方法
JP7196040B2 (ja) * 2019-03-14 2022-12-26 株式会社東芝 半導体記憶装置
US11094368B2 (en) 2019-08-15 2021-08-17 Powerchip Semiconductor Manufacturing Corporation Memory, memory chip and memory data access method
CN110503995A (zh) * 2019-08-19 2019-11-26 上海华力微电子有限公司 一种用于sram的读写优化电路
US11183234B2 (en) * 2019-11-25 2021-11-23 Taiwan Semiconductor Manufacturing Company, Ltd. Bitcell supporting bit-write-mask function
CN111161785A (zh) * 2019-12-31 2020-05-15 展讯通信（上海）有限公司 静态随机存储器及其故障检测电路
CN113760173A (zh) * 2020-06-05 2021-12-07 长鑫存储技术(上海)有限公司 读写转换电路以及存储器
CN112102863B (zh) * 2020-09-07 2023-04-25 海光信息技术股份有限公司 静态随机存取存储器控制电路、方法、存储器和处理器
CN112382326B (zh) * 2020-12-11 2023-11-17 北京中科芯蕊科技有限公司 一种亚阈值双电源sram读辅助电路
JP7453135B2 (ja) 2020-12-22 2024-03-19 ルネサスエレクトロニクス株式会社 半導体装置
JP2023016551A (ja) * 2021-07-21 2023-02-02 ルネサスエレクトロニクス株式会社 半導体装置および半導体システム
TWI781836B (zh) * 2021-11-30 2022-10-21 修平學校財團法人修平科技大學 半導體記憶裝置
TWI781854B (zh) * 2021-12-16 2022-10-21 修平學校財團法人修平科技大學 記憶裝置

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5564686A (en) 1978-11-08 1980-05-15 Nec Corp Memory unit
US4202146A (en) 1979-03-01 1980-05-13 Adams William C Transportable module for trilevel dwelling
US4288865A (en) 1980-02-06 1981-09-08 Mostek Corporation Low-power battery backup circuit for semiconductor memory
JPS6038796A (ja) 1983-08-12 1985-02-28 Hitachi Ltd 半導体集積回路装置
US4685087A (en) 1983-08-31 1987-08-04 Texas Instruments Incorporated SRAM with constant pulse width
US5159571A (en) 1987-12-29 1992-10-27 Hitachi, Ltd. Semiconductor memory with a circuit for testing characteristics of flip-flops including selectively applied power supply voltages
JPH01294295A (ja) 1988-05-20 1989-11-28 Fujitsu Ltd パーシャル・ランダム・アクセス・メモリ
GB2222461B (en) 1988-08-30 1993-05-19 Mitsubishi Electric Corp On chip testing of semiconductor memory devices
JPH02108297A (ja) 1988-10-18 1990-04-20 Nippon Telegr & Teleph Corp <Ntt> メモリセル回路
JP2927463B2 (ja) 1989-09-28 1999-07-28 株式会社日立製作所 半導体記憶装置
US5301147A (en) * 1993-01-08 1994-04-05 Aptix Corporation Static random access memory cell with single logic-high voltage level bit-line and address-line drivers
KR100299993B1 (ko) * 1992-09-28 2001-11-22 윌리엄 비. 켐플러 게이트 어레이 장치용 정적 랜덤 액세스 메모리
JP3354231B2 (ja) 1993-09-29 2002-12-09 三菱電機エンジニアリング株式会社 半導体装置
JP3015652B2 (ja) 1994-03-03 2000-03-06 株式会社東芝 半導体メモリ装置
JPH0863972A (ja) * 1994-08-18 1996-03-08 Kawasaki Steel Corp 半導体記憶装置
JP3523718B2 (ja) * 1995-02-06 2004-04-26 株式会社ルネサステクノロジ 半導体装置
US5535172A (en) 1995-02-28 1996-07-09 Alliance Semiconductor Corporation Dual-port random access memory having reduced architecture
JP4198201B2 (ja) * 1995-06-02 2008-12-17 株式会社ルネサステクノロジ 半導体装置
JPH09120682A (ja) * 1995-10-24 1997-05-06 Mitsubishi Electric Corp 半導体メモリ装置
JPH09147564A (ja) 1995-11-17 1997-06-06 Nippon Telegr & Teleph Corp <Ntt> メモリセルアレイ
JP2865080B2 (ja) * 1996-09-30 1999-03-08 日本電気株式会社 半導体記憶装置
JP3523762B2 (ja) * 1996-12-19 2004-04-26 株式会社東芝 半導体記憶装置
TW459389B (en) * 1997-11-22 2001-10-11 United Microelectronics Corp Manufacture method of SRAM
JP3110407B2 (ja) 1998-12-11 2000-11-20 日本電気アイシーマイコンシステム株式会社 半導体記憶装置
JP4565700B2 (ja) * 1999-05-12 2010-10-20 ルネサスエレクトロニクス株式会社 半導体装置
JP3583028B2 (ja) * 1999-07-16 2004-10-27 Ｎｅｃエレクトロニクス株式会社 Ｓｒａｍ
KR200204497Y1 (ko) 2000-06-24 2000-11-15 이원창 공압을 이용한 원터치방식의 철도차량용 브레이크완해시스템
JP2002042476A (ja) * 2000-07-25 2002-02-08 Mitsubishi Electric Corp スタティック型半導体記憶装置
US6529400B1 (en) * 2000-12-15 2003-03-04 Lsi Logic Corporation Source pulsed, dynamic threshold complementary metal oxide semiconductor static RAM cells
JP4782937B2 (ja) 2001-03-27 2011-09-28 株式会社東芝 半導体記憶装置
JP3910078B2 (ja) 2001-05-11 2007-04-25 株式会社ルネサステクノロジ 半導体記憶装置および半導体記憶装置のテスト方法
JP4895439B2 (ja) 2001-06-28 2012-03-14 ルネサスエレクトロニクス株式会社 スタティック型メモリ
US6549453B2 (en) * 2001-06-29 2003-04-15 International Business Machines Corporation Method and apparatus for writing operation in SRAM cells employing PFETS pass gates
JP2003132683A (ja) * 2001-10-23 2003-05-09 Hitachi Ltd 半導体装置
JP3983032B2 (ja) * 2001-11-09 2007-09-26 沖電気工業株式会社 半導体記憶装置
US6724648B2 (en) * 2002-04-05 2004-04-20 Intel Corporation SRAM array with dynamic voltage for reducing active leakage power
US7035132B2 (en) * 2002-04-30 2006-04-25 Stmicroelectronics Pvt. Ltd Memory architecture for increased speed and reduced power consumption
JP4408610B2 (ja) * 2002-08-09 2010-02-03 株式会社ルネサステクノロジ スタティック型半導体記憶装置
EP1537583A1 (en) 2002-09-02 2005-06-08 Koninklijke Philips Electronics N.V. Device writing to a plurality of rows in a memory matrix simultaneously
US6798688B2 (en) * 2002-11-29 2004-09-28 International Business Machines Corp. Storage array such as a SRAM with reduced power requirements
US6744659B1 (en) 2002-12-09 2004-06-01 Analog Devices, Inc. Source-biased memory cell array
JP2004199829A (ja) 2002-12-20 2004-07-15 Matsushita Electric Ind Co Ltd 半導体記憶装置
JP4388274B2 (ja) 2002-12-24 2009-12-24 株式会社ルネサステクノロジ 半導体記憶装置
US6944042B2 (en) 2002-12-31 2005-09-13 Texas Instruments Incorporated Multiple bit memory cells and methods for reading non-volatile data
JP4370100B2 (ja) * 2003-01-10 2009-11-25 パナソニック株式会社 半導体記憶装置
JP4290457B2 (ja) * 2003-03-31 2009-07-08 株式会社ルネサステクノロジ 半導体記憶装置
JP2004362695A (ja) 2003-06-05 2004-12-24 Renesas Technology Corp 半導体記憶装置
KR100557190B1 (ko) 2003-11-28 2006-03-03 삼성전자주식회사 이동통신 시스템에서 순방향 데이터 전송률 제어장치 및 방법
JP4553185B2 (ja) * 2004-09-15 2010-09-29 ルネサスエレクトロニクス株式会社 半導体集積回路装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI634644B (zh) * 2011-07-26 2018-09-01 瑞薩電子股份有限公司 半導體裝置
TWI670829B (zh) * 2011-07-26 2019-09-01 日商瑞薩電子股份有限公司 半導體裝置
CN104347110A (zh) * 2013-08-05 2015-02-11 瑞萨电子株式会社 半导体存储器件
CN104347110B (zh) * 2013-08-05 2018-07-31 瑞萨电子株式会社 半导体存储器件

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