CN1750171A - 半导体集成电路器件 - Google Patents
半导体集成电路器件 Download PDFInfo
- Publication number
- CN1750171A CN1750171A CNA2005100791297A CN200510079129A CN1750171A CN 1750171 A CN1750171 A CN 1750171A CN A2005100791297 A CNA2005100791297 A CN A2005100791297A CN 200510079129 A CN200510079129 A CN 200510079129A CN 1750171 A CN1750171 A CN 1750171A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 230000003068 static effect Effects 0.000 claims abstract description 16
- 230000008878 coupling Effects 0.000 claims abstract description 14
- 238000010168 coupling process Methods 0.000 claims abstract description 14
- 238000005859 coupling reaction Methods 0.000 claims abstract description 14
- 108010032595 Antibody Binding Sites Proteins 0.000 claims description 66
- 210000004027 cell Anatomy 0.000 claims description 13
- 230000000295 complement effect Effects 0.000 claims description 9
- 210000000352 storage cell Anatomy 0.000 claims description 9
- 230000004913 activation Effects 0.000 description 14
- 238000010586 diagram Methods 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 12
- 230000009467 reduction Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 230000001965 increasing effect Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005755 formation reaction Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 101150110971 CIN7 gene Proteins 0.000 description 2
- 101150110298 INV1 gene Proteins 0.000 description 2
- 101100397044 Xenopus laevis invs-a gene Proteins 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
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- 230000000630 rising effect Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (13)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004267645 | 2004-09-15 | ||
JP2004267645A JP4553185B2 (ja) | 2004-09-15 | 2004-09-15 | 半導体集積回路装置 |
JP2004-267645 | 2004-09-15 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010101667777A Division CN101866686B (zh) | 2004-09-15 | 2005-06-24 | 半导体集成电路器件 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1750171A true CN1750171A (zh) | 2006-03-22 |
CN1750171B CN1750171B (zh) | 2010-06-09 |
Family
ID=36033731
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010101667777A Active CN101866686B (zh) | 2004-09-15 | 2005-06-24 | 半导体集成电路器件 |
CN2005100791297A Active CN1750171B (zh) | 2004-09-15 | 2005-06-24 | 半导体集成电路器件 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010101667777A Active CN101866686B (zh) | 2004-09-15 | 2005-06-24 | 半导体集成电路器件 |
Country Status (5)
Country | Link |
---|---|
US (8) | US7113421B2 (zh) |
JP (1) | JP4553185B2 (zh) |
KR (1) | KR101168340B1 (zh) |
CN (2) | CN101866686B (zh) |
TW (3) | TWI397070B (zh) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101667452B (zh) * | 2008-09-01 | 2012-10-31 | 瑞萨电子株式会社 | 半导体器件 |
CN104851453A (zh) * | 2014-02-18 | 2015-08-19 | 辉达公司 | 用于低功率sram的写入辅助方案 |
CN105590646A (zh) * | 2009-12-25 | 2016-05-18 | 株式会社半导体能源研究所 | 存储器装置、半导体器件和电子装置 |
CN106486151A (zh) * | 2015-09-02 | 2017-03-08 | 爱思开海力士有限公司 | 采用分级字线方案的半导体器件 |
CN106997775A (zh) * | 2015-12-17 | 2017-08-01 | 台湾积体电路制造股份有限公司 | 半导体存储器及其操作方法 |
CN107705812A (zh) * | 2016-08-08 | 2018-02-16 | 台湾积体电路制造股份有限公司 | 静态随机存取存储器sram装置 |
CN109584928A (zh) * | 2018-11-30 | 2019-04-05 | 中国科学院微电子研究所 | 一种用于静态随机存储器的写辅助电路以及写辅助方法 |
CN110097907A (zh) * | 2018-01-29 | 2019-08-06 | 展讯通信(上海)有限公司 | Sram存储器 |
Families Citing this family (95)
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US7425841B2 (en) | 2004-02-14 | 2008-09-16 | Tabula Inc. | Configurable circuits, IC's, and systems |
US7167025B1 (en) | 2004-02-14 | 2007-01-23 | Herman Schmit | Non-sequentially configurable IC |
JP4553185B2 (ja) | 2004-09-15 | 2010-09-29 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置 |
US7330050B2 (en) | 2004-11-08 | 2008-02-12 | Tabula, Inc. | Storage elements for a configurable IC and method and apparatus for accessing data stored in the storage elements |
US7317331B2 (en) | 2004-11-08 | 2008-01-08 | Tabula, Inc. | Reconfigurable IC that has sections running at different reconfiguration rates |
US7236009B1 (en) | 2004-12-01 | 2007-06-26 | Andre Rohe | Operational time extension |
US7272031B1 (en) * | 2005-03-15 | 2007-09-18 | Tabula, Inc. | Method and apparatus for reduced power cell |
US7230869B1 (en) * | 2005-03-15 | 2007-06-12 | Jason Redgrave | Method and apparatus for accessing contents of memory cells |
JP4912016B2 (ja) | 2005-05-23 | 2012-04-04 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
JP5100035B2 (ja) | 2005-08-02 | 2012-12-19 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
US7372297B1 (en) | 2005-11-07 | 2008-05-13 | Tabula Inc. | Hybrid interconnect/logic circuits enabling efficient replication of a function in several sub-cycles to save logic and routing resources |
US7679401B1 (en) | 2005-12-01 | 2010-03-16 | Tabula, Inc. | User registers implemented with routing circuits in a configurable IC |
TWI266338B (en) * | 2005-12-01 | 2006-11-11 | Via Tech Inc | Output circuit of SRAM |
JP2007172715A (ja) * | 2005-12-20 | 2007-07-05 | Fujitsu Ltd | 半導体記憶装置およびその制御方法 |
US7669097B1 (en) | 2006-03-27 | 2010-02-23 | Tabula, Inc. | Configurable IC with error detection and correction circuitry |
US7292495B1 (en) * | 2006-06-29 | 2007-11-06 | Freescale Semiconductor, Inc. | Integrated circuit having a memory with low voltage read/write operation |
US7793172B2 (en) * | 2006-09-28 | 2010-09-07 | Freescale Semiconductor, Inc. | Controlled reliability in an integrated circuit |
US7492627B2 (en) * | 2006-11-17 | 2009-02-17 | Freescale Semiconductor, Inc. | Memory with increased write margin bitcells |
JP2008227171A (ja) * | 2007-03-13 | 2008-09-25 | Toshiba Corp | 不揮発性半導体メモリ |
US7521959B2 (en) | 2007-03-20 | 2009-04-21 | Tabula, Inc. | Configurable IC having a routing fabric with storage elements |
US8112468B1 (en) | 2007-03-22 | 2012-02-07 | Tabula, Inc. | Method and apparatus for performing an operation with a plurality of sub-operations in a configurable IC |
US7928761B2 (en) | 2007-09-06 | 2011-04-19 | Tabula, Inc. | Configuration context switcher with a latch |
JP2009070474A (ja) | 2007-09-13 | 2009-04-02 | Panasonic Corp | 半導体集積回路 |
US7688656B2 (en) * | 2007-10-22 | 2010-03-30 | Freescale Semiconductor, Inc. | Integrated circuit memory having dynamically adjustable read margin and method therefor |
US7613052B2 (en) * | 2007-11-01 | 2009-11-03 | Arm Limited | Memory device and method of operating such a memory device |
US8863067B1 (en) | 2008-02-06 | 2014-10-14 | Tabula, Inc. | Sequential delay analysis by placement engines |
US7643357B2 (en) * | 2008-02-18 | 2010-01-05 | International Business Machines Corporation | System and method for integrating dynamic leakage reduction with write-assisted SRAM architecture |
JP2009289784A (ja) * | 2008-05-27 | 2009-12-10 | Nec Electronics Corp | 半導体集積回路装置 |
JP2009289308A (ja) * | 2008-05-28 | 2009-12-10 | Toshiba Corp | 半導体記憶装置 |
US8166435B2 (en) * | 2008-06-26 | 2012-04-24 | Tabula, Inc. | Timing operations in an IC with configurable circuits |
US8164969B2 (en) * | 2008-07-01 | 2012-04-24 | Jeng-Jye Shau | Ultra-low power hybrid circuits |
US7782655B2 (en) * | 2008-07-01 | 2010-08-24 | Jeng-Jye Shau | Ultra-low power hybrid sub-threshold circuits |
CN102105941A (zh) * | 2008-08-01 | 2011-06-22 | 松下电器产业株式会社 | 半导体存储装置 |
US8243541B2 (en) * | 2008-12-19 | 2012-08-14 | Oracle America, Inc. | Methods and apparatuses for improving reduced power operations in embedded memory arrays |
US8045402B2 (en) * | 2009-06-29 | 2011-10-25 | Arm Limited | Assisting write operations to data storage cells |
JP4857367B2 (ja) * | 2009-07-06 | 2012-01-18 | 株式会社沖データ | 駆動回路及び画像形成装置 |
JP5317900B2 (ja) | 2009-09-14 | 2013-10-16 | ルネサスエレクトロニクス株式会社 | 半導体集積回路およびその動作方法 |
KR101034616B1 (ko) * | 2009-11-30 | 2011-05-12 | 주식회사 하이닉스반도체 | 센스앰프 및 반도체 메모리장치 |
JP5596335B2 (ja) * | 2009-12-24 | 2014-09-24 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP5380332B2 (ja) | 2010-03-02 | 2014-01-08 | ルネサスエレクトロニクス株式会社 | 半導体装置及びデータプロセッサ |
US8218376B2 (en) * | 2010-04-21 | 2012-07-10 | Texas Instruments Incorporated | Reduced power consumption in retain-till-accessed static memories |
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CN102290099B (zh) * | 2011-07-04 | 2016-04-06 | 上海华虹宏力半导体制造有限公司 | Sram存储器及其形成方法 |
JP5932257B2 (ja) * | 2011-07-14 | 2016-06-08 | エスアイアイ・セミコンダクタ株式会社 | メモリ回路 |
JP5705053B2 (ja) | 2011-07-26 | 2015-04-22 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
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JP6099368B2 (ja) * | 2011-11-25 | 2017-03-22 | 株式会社半導体エネルギー研究所 | 記憶装置 |
WO2013084385A1 (ja) | 2011-12-08 | 2013-06-13 | パナソニック株式会社 | 半導体記憶装置 |
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JP5867091B2 (ja) * | 2012-01-10 | 2016-02-24 | 株式会社ソシオネクスト | 半導体記憶装置及びその書き込み方法 |
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KR102433736B1 (ko) | 2012-01-23 | 2022-08-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
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JP5784558B2 (ja) * | 2012-08-14 | 2015-09-24 | 株式会社東芝 | 半導体記憶装置 |
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JP6034764B2 (ja) * | 2013-08-05 | 2016-11-30 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
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JP5917738B2 (ja) * | 2015-02-24 | 2016-05-18 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体チップ |
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KR102493815B1 (ko) * | 2016-01-29 | 2023-02-01 | 삼성전자주식회사 | 선택적으로 절연 기능을 수행하는 반도체 소자 및 그 레이아웃 배치 방법 |
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KR102646847B1 (ko) * | 2016-12-07 | 2024-03-12 | 삼성전자주식회사 | 반도체 메모리 장치, 반도체 메모리 장치의 동작 방법 및 메모리 시스템 |
JP2018206452A (ja) * | 2017-05-30 | 2018-12-27 | ルネサスエレクトロニクス株式会社 | 内容参照メモリ及び半導体装置 |
JP2019046514A (ja) * | 2017-08-29 | 2019-03-22 | 東芝メモリ株式会社 | 半導体記憶装置 |
JP2018142397A (ja) * | 2018-06-20 | 2018-09-13 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
CN110867201B (zh) * | 2018-08-27 | 2022-03-25 | 龙芯中科技术股份有限公司 | 存储单元及多端口静态随机存储器 |
JP7196040B2 (ja) * | 2019-03-14 | 2022-12-26 | 株式会社東芝 | 半導体記憶装置 |
US11094368B2 (en) | 2019-08-15 | 2021-08-17 | Powerchip Semiconductor Manufacturing Corporation | Memory, memory chip and memory data access method |
CN110503995A (zh) * | 2019-08-19 | 2019-11-26 | 上海华力微电子有限公司 | 一种用于sram的读写优化电路 |
US11183234B2 (en) * | 2019-11-25 | 2021-11-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bitcell supporting bit-write-mask function |
CN111161785A (zh) * | 2019-12-31 | 2020-05-15 | 展讯通信(上海)有限公司 | 静态随机存储器及其故障检测电路 |
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CN112382326B (zh) * | 2020-12-11 | 2023-11-17 | 北京中科芯蕊科技有限公司 | 一种亚阈值双电源sram读辅助电路 |
JP7453135B2 (ja) | 2020-12-22 | 2024-03-19 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2023016551A (ja) * | 2021-07-21 | 2023-02-02 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体システム |
TWI781836B (zh) * | 2021-11-30 | 2022-10-21 | 修平學校財團法人修平科技大學 | 半導體記憶裝置 |
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CN101667452B (zh) * | 2008-09-01 | 2012-10-31 | 瑞萨电子株式会社 | 半导体器件 |
US9941304B2 (en) | 2009-12-25 | 2018-04-10 | Semiconductor Energy Laboratory Co., Ltd. | Memory device, semiconductor device, and electronic device |
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CN105590646B (zh) * | 2009-12-25 | 2019-01-08 | 株式会社半导体能源研究所 | 存储器装置、半导体器件和电子装置 |
CN104851453A (zh) * | 2014-02-18 | 2015-08-19 | 辉达公司 | 用于低功率sram的写入辅助方案 |
CN104851453B (zh) * | 2014-02-18 | 2018-05-18 | 辉达公司 | 用于低功率sram的写入辅助方案 |
CN106486151B (zh) * | 2015-09-02 | 2020-09-22 | 爱思开海力士有限公司 | 采用分级字线方案的半导体器件 |
CN106486151A (zh) * | 2015-09-02 | 2017-03-08 | 爱思开海力士有限公司 | 采用分级字线方案的半导体器件 |
CN106997775A (zh) * | 2015-12-17 | 2017-08-01 | 台湾积体电路制造股份有限公司 | 半导体存储器及其操作方法 |
US10783954B2 (en) | 2015-12-17 | 2020-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor memory with respective power voltages for memory cells |
CN106997775B (zh) * | 2015-12-17 | 2020-10-30 | 台湾积体电路制造股份有限公司 | 半导体存储器及其操作方法 |
US11264088B2 (en) | 2015-12-17 | 2022-03-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor memory with respective power voltages for memory cells |
CN107705812A (zh) * | 2016-08-08 | 2018-02-16 | 台湾积体电路制造股份有限公司 | 静态随机存取存储器sram装置 |
CN107705812B (zh) * | 2016-08-08 | 2021-06-29 | 台湾积体电路制造股份有限公司 | 静态随机存取存储器sram装置 |
CN110097907A (zh) * | 2018-01-29 | 2019-08-06 | 展讯通信(上海)有限公司 | Sram存储器 |
CN110097907B (zh) * | 2018-01-29 | 2021-03-19 | 展讯通信(上海)有限公司 | Sram存储器 |
CN109584928A (zh) * | 2018-11-30 | 2019-04-05 | 中国科学院微电子研究所 | 一种用于静态随机存储器的写辅助电路以及写辅助方法 |
CN109584928B (zh) * | 2018-11-30 | 2021-07-23 | 中国科学院微电子研究所 | 一种用于静态随机存储器的写辅助电路以及写辅助方法 |
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US20100188887A1 (en) | 2010-07-29 |
JP4553185B2 (ja) | 2010-09-29 |
US7715223B2 (en) | 2010-05-11 |
TW201320070A (zh) | 2013-05-16 |
TW200609940A (en) | 2006-03-16 |
US7420834B2 (en) | 2008-09-02 |
US8441843B2 (en) | 2013-05-14 |
KR101168340B1 (ko) | 2012-07-25 |
JP2006085786A (ja) | 2006-03-30 |
US20090116279A1 (en) | 2009-05-07 |
US20130272058A1 (en) | 2013-10-17 |
US20060274572A1 (en) | 2006-12-07 |
US20060274571A1 (en) | 2006-12-07 |
US20120044775A1 (en) | 2012-02-23 |
US20060056229A1 (en) | 2006-03-16 |
US7477537B2 (en) | 2009-01-13 |
US20150380076A1 (en) | 2015-12-31 |
TWI576838B (zh) | 2017-04-01 |
US8072799B2 (en) | 2011-12-06 |
KR20060046561A (ko) | 2006-05-17 |
US9123435B2 (en) | 2015-09-01 |
CN1750171B (zh) | 2010-06-09 |
US7113421B2 (en) | 2006-09-26 |
TW201619961A (zh) | 2016-06-01 |
TWI397070B (zh) | 2013-05-21 |
CN101866686B (zh) | 2012-06-27 |
CN101866686A (zh) | 2010-10-20 |
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