SG142160A1 - Method of manufacturing a semiconductor device - Google Patents

Method of manufacturing a semiconductor device

Info

Publication number
SG142160A1
SG142160A1 SG200505102-4A SG2005051024A SG142160A1 SG 142160 A1 SG142160 A1 SG 142160A1 SG 2005051024 A SG2005051024 A SG 2005051024A SG 142160 A1 SG142160 A1 SG 142160A1
Authority
SG
Singapore
Prior art keywords
manufacturing
semiconductor device
substrate
circuit
array substrate
Prior art date
Application number
SG200505102-4A
Other languages
English (en)
Inventor
Masaaki Hiroki
Shunpei Yamazaki
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Publication of SG142160A1 publication Critical patent/SG142160A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2601—Apparatus or methods therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/3025—Wireless interface with the DUT
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/006—Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Theoretical Computer Science (AREA)
SG200505102-4A 2001-03-19 2002-03-13 Method of manufacturing a semiconductor device SG142160A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001079609 2001-03-19

Publications (1)

Publication Number Publication Date
SG142160A1 true SG142160A1 (en) 2008-05-28

Family

ID=18936021

Family Applications (2)

Application Number Title Priority Date Filing Date
SG200505102-4A SG142160A1 (en) 2001-03-19 2002-03-13 Method of manufacturing a semiconductor device
SG200201419A SG117406A1 (en) 2001-03-19 2002-03-13 Method of manufacturing a semiconductor device

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG200201419A SG117406A1 (en) 2001-03-19 2002-03-13 Method of manufacturing a semiconductor device

Country Status (7)

Country Link
US (5) US7105365B2 (enExample)
JP (1) JP4271404B2 (enExample)
KR (2) KR100825911B1 (enExample)
CN (3) CN101241916B (enExample)
MY (1) MY134535A (enExample)
SG (2) SG142160A1 (enExample)
TW (1) TWI286367B (enExample)

Families Citing this family (93)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7301279B2 (en) * 2001-03-19 2007-11-27 Semiconductor Energy Laboratory Co., Ltd. Light-emitting apparatus and method of manufacturing the same
US6850080B2 (en) * 2001-03-19 2005-02-01 Semiconductor Energy Laboratory Co., Ltd. Inspection method and inspection apparatus
JP2002340989A (ja) * 2001-05-15 2002-11-27 Semiconductor Energy Lab Co Ltd 測定方法、検査方法及び検査装置
TWI237729B (en) * 2001-12-24 2005-08-11 Chi Mei Optoelectronics Corp Energy recycling device for liquid crystal display device
US7453705B2 (en) * 2002-05-07 2008-11-18 Alien Technology Corporation Barrier, such as a hermetic barrier layer for O/PLED and other electronic devices on plastic
US7592980B2 (en) 2002-06-05 2009-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
SG130013A1 (en) * 2002-07-25 2007-03-20 Semiconductor Energy Lab Method of fabricating light emitting device
TWI304706B (enExample) * 2002-08-30 2008-12-21 Au Optronics Corp
KR100867726B1 (ko) * 2002-11-21 2008-11-10 삼성전자주식회사 액정표시장치의 제조 방법
JP4429593B2 (ja) * 2002-11-22 2010-03-10 パナソニック株式会社 半導体装置のレイアウト検証方法
US7205986B2 (en) * 2002-12-18 2007-04-17 Semiconductor Energy Laboratory Co., Ltd. Image display device and testing method of the same
US7652359B2 (en) * 2002-12-27 2010-01-26 Semiconductor Energy Laboratory Co., Ltd. Article having display device
EP1437683B1 (en) * 2002-12-27 2017-03-08 Semiconductor Energy Laboratory Co., Ltd. IC card and booking account system using the IC card
JP4242663B2 (ja) * 2003-02-19 2009-03-25 ソフトバンクＢｂ株式会社 無線タグ
US7973313B2 (en) * 2003-02-24 2011-07-05 Semiconductor Energy Laboratory Co., Ltd. Thin film integrated circuit device, IC label, container comprising the thin film integrated circuit, manufacturing method of the thin film integrated circuit device, manufacturing method of the container, and management method of product having the container
WO2004086070A1 (ja) * 2003-03-25 2004-10-07 Semiconductor Energy Laboratory Co. Ltd. 半導体装置の検査回路、および検査方法
KR100702462B1 (ko) * 2003-05-12 2007-04-04 인터내셔널 비지네스 머신즈 코포레이션 액티브 매트릭스 패널의 검사 장치, 검사 방법 및 액티브매트릭스 ｏｌｅｄ 패널의 제조 방법
JP4062171B2 (ja) 2003-05-28 2008-03-19 ソニー株式会社 積層構造の製造方法
KR100936908B1 (ko) * 2003-07-18 2010-01-18 삼성전자주식회사 전계발광 디바이스의 박막 트랜지스터, 이를 이용한전계발광 디바이스 및 이의 제조 방법
US7566001B2 (en) * 2003-08-29 2009-07-28 Semiconductor Energy Laboratory Co., Ltd. IC card
US7199637B2 (en) * 2003-09-02 2007-04-03 Semiconductor Energy Laboratory Co., Ltd. Rectifier circuit without alternating-current feedback
US7520790B2 (en) 2003-09-19 2009-04-21 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of display device
JP4823478B2 (ja) * 2003-09-19 2011-11-24 株式会社半導体エネルギー研究所 発光装置の作製方法
KR101270180B1 (ko) * 2004-01-30 2013-05-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 검사장치 및 검사방법과, 반도체장치 제작방법
KR101127888B1 (ko) * 2004-02-06 2012-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 집적회로의 제조방법 및 소자 기판
CN101499479B (zh) * 2004-08-23 2010-11-03 株式会社半导体能源研究所 无线芯片及其制造方法
CN101044624A (zh) * 2004-10-22 2007-09-26 株式会社半导体能源研究所 半导体器件
US20060109120A1 (en) * 2004-11-19 2006-05-25 Jeremy Burr RFID tag in a substrate
US7518602B2 (en) * 2004-12-06 2009-04-14 Semiconductor Energy Laboratory Co., Ltd. Test circuit and display device having the same
US8716834B2 (en) * 2004-12-24 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including antenna
US8835907B2 (en) * 2005-01-21 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
EP1860429A1 (en) * 2005-02-10 2007-11-28 Kanagawa Academy of Science and Technology Circular dichroic thermal lens microscope
JPWO2006085606A1 (ja) * 2005-02-10 2008-06-26 財団法人神奈川科学技術アカデミー 円二色性熱レンズ顕微鏡装置
WO2006095791A1 (en) * 2005-03-07 2006-09-14 Semiconductor Energy Laboratory Co., Ltd. Element substrate, inspecting method, and manufacturing method of semiconductor device
US7659892B2 (en) * 2005-03-17 2010-02-09 Semiconductor Energy Laboratory Co., Ltd. Display device and portable terminal
JP2006303422A (ja) * 2005-03-22 2006-11-02 Sony Corp プラズマ処理方法および半導体装置の製造方法
US7838347B2 (en) * 2005-08-12 2010-11-23 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of display device
US7808253B2 (en) 2005-12-02 2010-10-05 Semiconductor Energy Laboratory Co., Ltd. Test method of microstructure body and micromachine
JP5250960B2 (ja) * 2006-01-24 2013-07-31 セイコーエプソン株式会社 発光装置および電子機器
DE102006054088A1 (de) * 2006-11-16 2008-05-21 Siemens Ag Messvorrichtung und Messverfahren zum Inspizieren einer Oberfläche eines Substrates
US20100015731A1 (en) * 2007-02-20 2010-01-21 Lam Research Corporation Method of low-k dielectric film repair
JP5331389B2 (ja) * 2007-06-15 2013-10-30 株式会社半導体エネルギー研究所 表示装置の作製方法
US8334537B2 (en) * 2007-07-06 2012-12-18 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
TWI456663B (zh) 2007-07-20 2014-10-11 Semiconductor Energy Lab 顯示裝置之製造方法
JP5561899B2 (ja) * 2007-10-19 2014-07-30 キヤノン株式会社 表示装置の製造方法
US7793237B2 (en) * 2007-12-17 2010-09-07 International Business Machines Corporation System, structure and method of providing dynamic optimization of integrated circuits using a non-contact method of selection, and a design structure
DE102008030545A1 (de) * 2008-06-27 2010-01-07 Siemens Aktiengesellschaft Vorrichtung und Verfahren zur berührungslosen Ankontaktierung von leitfähigen Strukturen, insbesondere von Dünnschicht-Transistor-Flüssigkristallanzeigen (Thin Film Transistor Liquid Crystal Displays)
TWI469354B (zh) 2008-07-31 2015-01-11 Semiconductor Energy Lab 半導體裝置及其製造方法
US8643127B2 (en) 2008-08-21 2014-02-04 S3C, Inc. Sensor device packaging
US7775119B1 (en) 2009-03-03 2010-08-17 S3C, Inc. Media-compatible electrically isolated pressure sensor for high temperature applications
JP5663214B2 (ja) * 2009-07-03 2015-02-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5751748B2 (ja) * 2009-09-16 2015-07-22 信越化学工業株式会社 多結晶シリコン塊群および多結晶シリコン塊群の製造方法
CN102721506A (zh) * 2011-03-30 2012-10-10 浙江三花股份有限公司 一种压力传感器
US9366696B2 (en) 2011-10-19 2016-06-14 Applied Materials, Inc. Roll to roll tester and method of testing flexible substrates roll to roll
JP6088234B2 (ja) 2011-12-23 2017-03-01 株式会社半導体エネルギー研究所 受電装置、無線給電システム
US8879275B2 (en) * 2012-02-21 2014-11-04 International Business Machines Corporation Anti-corrosion conformal coating comprising modified porous silica fillers for metal conductors electrically connecting an electronic component
US9431473B2 (en) 2012-11-21 2016-08-30 Qualcomm Incorporated Hybrid transformer structure on semiconductor devices
CN104067376B (zh) * 2013-01-23 2016-12-28 株式会社村田制作所 薄膜电容和齐纳二极管的复合电子部件及其制造方法
US10002700B2 (en) 2013-02-27 2018-06-19 Qualcomm Incorporated Vertical-coupling transformer with an air-gap structure
KR102024921B1 (ko) * 2013-03-11 2019-09-24 어플라이드 머티어리얼스, 인코포레이티드 Oled 애플리케이션들을 위한 pecvd hmdso 막의 플라즈마 경화
US9634645B2 (en) 2013-03-14 2017-04-25 Qualcomm Incorporated Integration of a replica circuit and a transformer above a dielectric substrate
US9025119B2 (en) * 2013-05-14 2015-05-05 Shenzhen China Star Optoelectronics Technology Co., Ltd. LCD module and liquid crystal panel
CN104122695B (zh) * 2013-07-19 2017-07-07 深超光电（深圳）有限公司 用于液晶显示面板的阵列基板及阵列基板的制造方法
US9449753B2 (en) 2013-08-30 2016-09-20 Qualcomm Incorporated Varying thickness inductor
US9906318B2 (en) 2014-04-18 2018-02-27 Qualcomm Incorporated Frequency multiplexer
US10199283B1 (en) 2015-02-03 2019-02-05 Pdf Solutions, Inc. Method for processing a semiconductor wager using non-contact electrical measurements indicative of a resistance through a stitch, where such measurements are obtained by scanning a pad comprised of at least three parallel conductive stripes using a moving stage with beam deflection to account for motion of the stage
US9799575B2 (en) 2015-12-16 2017-10-24 Pdf Solutions, Inc. Integrated circuit containing DOEs of NCEM-enabled fill cells
DE102015101671A1 (de) * 2015-02-05 2016-08-11 Osram Opto Semiconductors Gmbh Verfahren und Vorrichtung zur Überprüfung einer optoelektronischen Komponente
US10593604B1 (en) 2015-12-16 2020-03-17 Pdf Solutions, Inc. Process for making semiconductor dies, chips, and wafers using in-line measurements obtained from DOEs of NCEM-enabled fill cells
US10978438B1 (en) 2015-12-16 2021-04-13 Pdf Solutions, Inc. IC with test structures and E-beam pads embedded within a contiguous standard cell area
CN107085300B (zh) 2016-02-15 2021-06-22 精工爱普生株式会社 虚像显示装置以及影像元件单元的制造方法
US9905553B1 (en) 2016-04-04 2018-02-27 Pdf Solutions, Inc. Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, AACNT-short-configured, GATECNT-short-configured, and metal-short-configured, NCEM-enabled fill cells
US9929063B1 (en) 2016-04-04 2018-03-27 Pdf Solutions, Inc. Process for making an integrated circuit that includes NCEM-Enabled, tip-to-side gap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates
US9627371B1 (en) 2016-04-04 2017-04-18 Pdf Solutions, Inc. Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, GATE-short-configured, GATECNT-short-configured, and AA-short-configured, NCEM-enabled fill cells
CN106654523A (zh) * 2016-12-20 2017-05-10 西安科锐盛创新科技有限公司 用于可重构多层全息天线的Si基SPiN二极管制备方法
CN106785336A (zh) * 2016-12-20 2017-05-31 西安电子科技大学 具备SiO2保护层的频率可重构全息天线的制备方法
JP6797042B2 (ja) * 2017-02-02 2020-12-09 株式会社ジャパンディスプレイ 表示装置
US9748153B1 (en) 2017-03-29 2017-08-29 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second does of standard cell compatible, NCEM-enabled fill cells, with the first DOE including side-to-side short configured fill cells, and the second DOE including tip-to-side short configure
US9773774B1 (en) 2017-03-30 2017-09-26 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including chamfer short configured fill cells, and the second DOE including corner short configured fill cells
IT201700040531A1 (it) * 2017-04-12 2018-10-12 Ricerca Sul Sist Energetico Rse S P A Metodo per la misura vettoriale di campi elettrici e relativa apparecchiatura.
JP7258781B2 (ja) * 2017-06-20 2023-04-17 アップル インコーポレイテッド 発光ダイオード（ｌｅｄ）テスト装置および製造方法
US9768083B1 (en) 2017-06-27 2017-09-19 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including merged-via open configured fill cells, and the second DOE including snake open configured fill cells
US9786649B1 (en) 2017-06-27 2017-10-10 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including via open configured fill cells, and the second DOE including stitch open configured fill cells
US10096530B1 (en) 2017-06-28 2018-10-09 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including merged-via open configured fill cells, and the second DOE including stitch open configured fill cells
US9865583B1 (en) 2017-06-28 2018-01-09 Pdf Solutions, Inc. Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including snake open configured fill cells, and the second DOE including stitch open configured fill cells
CN109119356B (zh) * 2018-08-22 2021-01-22 京东方科技集团股份有限公司 阵列基板的检测设备及检测方法
KR102506803B1 (ko) 2018-11-23 2023-03-07 삼성전자주식회사 배선 기판 테스트 방법 및 이를 수행하기 위한 장치
CN109782147A (zh) * 2018-12-26 2019-05-21 中国电子科技集团公司第五十五研究所 一种碳化硅mosfet高温栅偏测试方法
WO2021062773A1 (zh) * 2019-09-30 2021-04-08 重庆康佳光电技术研究院有限公司 一种发光二极管检测系统
KR102788148B1 (ko) * 2019-12-23 2025-03-27 엘지디스플레이 주식회사 Led 표시장치 및 이의 제조방법
KR102826508B1 (ko) * 2020-06-02 2025-06-27 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
CN112964944B (zh) * 2021-01-29 2022-06-14 上海交通大学 集成信号处理电路的传感器及其制备方法
KR20250125638A (ko) * 2024-02-15 2025-08-22 주식회사 웨이버사시스템즈 집적회로 웨이퍼, 집적회로 기판 및 집적회로 전자가속화 장치

Family Cites Families (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3311818A (en) 1963-03-11 1967-03-28 Api Instr Company Non-contact apparatus for magnetically measuring strain
US4190799A (en) * 1978-08-21 1980-02-26 Bell Telephone Laboratories, Incorporated Noncontacting measurement of hall effect in a wafer
JPS61226887A (ja) 1985-03-30 1986-10-08 Anritsu Corp Ｉｃカ−ド
JPH01243087A (ja) * 1988-03-25 1989-09-27 Hitachi Ltd 磁気光学効果を用いたディスプレイ装置
US5354695A (en) 1992-04-08 1994-10-11 Leedy Glenn J Membrane dielectric isolation IC fabrication
JPH01297626A (ja) 1988-05-26 1989-11-30 Matsushita Electric Ind Co Ltd アクティブマトリックスアレイとその検査方法
US5097201A (en) 1990-02-15 1992-03-17 Photon Dynamics, Inc. Voltage imaging system using electro-optics
US4983911A (en) 1990-02-15 1991-01-08 Photon Dynamics, Inc. Voltage imaging system using electro-optics
US5124635A (en) 1990-02-15 1992-06-23 Photon Dynamics, Inc. Voltage imaging system using electro-optics
US5266869A (en) * 1990-09-27 1993-11-30 Tokyo Electric Co., Ltd. Discharge lamp lighting apparatus having output impedance which limits current flow therethrough after start of discharging
JPH04138584A (ja) 1990-09-28 1992-05-13 Toppan Printing Co Ltd 情報カードの検査装置
US5424633A (en) * 1991-01-22 1995-06-13 Advanced Test Technologies Inc. Contactless test method and system for testing printed circuit boards
JPH04264745A (ja) 1991-02-19 1992-09-21 Fujitsu Ltd マイクロ波プローバ
JPH0547889A (ja) * 1991-03-01 1993-02-26 Matsushita Electron Corp 金属配線の信頼性評価方法
US5245274A (en) * 1991-05-31 1993-09-14 Youngquist John S Storm monitor
JPH05119356A (ja) 1991-06-17 1993-05-18 Seiko Epson Corp 電極基板の製造方法
US5444385A (en) * 1991-09-10 1995-08-22 Photon Dynamics, Inc. Testing apparatus for liquid crystal display substrates
US5543729A (en) 1991-09-10 1996-08-06 Photon Dynamics, Inc. Testing apparatus and connector for liquid crystal display substrates
US5295072A (en) * 1992-04-29 1994-03-15 Bfgoodrich Flightsystems, Inc. Sampled data lightning strike detection and mapping system capable of recovering a pre threshold sample history for detection and mapping processing
JPH05314786A (ja) 1992-05-14 1993-11-26 Sharp Corp 半導体記憶装置
JP2803943B2 (ja) 1992-10-21 1998-09-24 アルプス電気株式会社 非接触電力供給装置
US6058497A (en) * 1992-11-20 2000-05-02 Micron Technology, Inc. Testing and burn-in of IC chips using radio frequency transmission
JP3244141B2 (ja) 1993-03-12 2002-01-07 コスモ工機株式会社 管体の切断装置
US5389875A (en) * 1993-03-19 1995-02-14 Grumman Aerospace Corporation Apparatus for non-destructive testing of dielectric/magnetic materials
US5643804A (en) * 1993-05-21 1997-07-01 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a hybrid integrated circuit component having a laminated body
JPH06349913A (ja) * 1993-06-14 1994-12-22 Fujitsu Ltd バーンインの非接触モニター方法
JP3269225B2 (ja) * 1993-11-17 2002-03-25 横河電機株式会社 プリントコイル・テスタ
JPH08101404A (ja) 1994-09-30 1996-04-16 Hitachi Electron Eng Co Ltd Ｔｆｔ基板の欠陥検出方法および欠陥検査装置
US5631818A (en) * 1995-02-14 1997-05-20 Zero Emissions Technology Inc. Power supply for electrostatic preciptator electrodes
US5517110A (en) 1995-04-06 1996-05-14 Yentec Inc. Contactless test method and system for testing printed circuit boards
JP2909807B2 (ja) * 1995-11-22 1999-06-23 セイコーインスツルメンツ株式会社 超伝導量子干渉素子磁束計および非破壊検査装置
US6940267B1 (en) 1995-12-27 2005-09-06 William H. Swain Error correction by selective modulation
SG54559A1 (en) 1996-09-13 1998-11-16 Hitachi Ltd Power transmission system ic card and information communication system using ic card
TW308741B (en) * 1996-11-22 1997-06-21 United Microelectronics Corp Micro-coil structure of integrated circuit and process thereof
US5837971A (en) * 1997-01-21 1998-11-17 Lee; Myoung Jun Electric blanket having reduced electromagnetic field
JP3067671B2 (ja) 1997-02-07 2000-07-17 セイコーエプソン株式会社 アクティブマトリクスパネル、ビューファインダー並びに投写型表示装置
JP3328553B2 (ja) * 1997-07-25 2002-09-24 松下電器産業株式会社 回路基板検査装置
JP3288303B2 (ja) * 1997-09-04 2002-06-04 シャープ株式会社 液晶表示装置及びその駆動方法
US6909419B2 (en) * 1997-10-31 2005-06-21 Kopin Corporation Portable microdisplay system
WO1999032893A1 (en) 1997-12-22 1999-07-01 Conexant Systems, Inc. Wireless test apparatus for integrated circuit die
US6184696B1 (en) * 1998-03-23 2001-02-06 Conexant Systems, Inc. Use of converging beams for transmitting electromagnetic energy to power devices for die testing
US6331782B1 (en) 1998-03-23 2001-12-18 Conexant Systems, Inc. Method and apparatus for wireless testing of integrated circuits
JP4075138B2 (ja) * 1998-06-05 2008-04-16 凸版印刷株式会社 非接触ｉｃカード用検査装置および検査方法
US6249673B1 (en) * 1998-11-09 2001-06-19 Philip Y. W. Tsui Universal transmitter
US6365917B1 (en) 1998-11-25 2002-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4159713B2 (ja) 1998-11-25 2008-10-01 株式会社半導体エネルギー研究所 半導体装置
JP2000200053A (ja) 1999-01-07 2000-07-18 Futaba Corp 表示素子用基板の製造方法及び表示素子用基板
JP3755012B2 (ja) * 1999-01-18 2006-03-15 株式会社アドバンテスト デバイス試験システム及び方法並びに測定用カード
KR100314661B1 (ko) * 1999-02-05 2001-12-28 김형태 휴대용 원격제어 무선 영상 및 음성 통신시스템
JP2000258482A (ja) 1999-03-08 2000-09-22 Toshiba Corp 周波数検査装置
EP1049167A3 (en) 1999-04-30 2007-10-24 Sel Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2000321591A (ja) 1999-05-14 2000-11-24 Nec Corp 液晶表示装置
JP2001013917A (ja) * 1999-06-30 2001-01-19 Hitachi Ltd ディスプレイ装置
KR100333271B1 (ko) * 1999-07-05 2002-04-24 구본준, 론 위라하디락사 배선의 단락 및 단선 테스트를 위한 박막트랜지스터-액정표시장치의 어레이기판과 그 제조방법.
US6509217B1 (en) * 1999-10-22 2003-01-21 Damoder Reddy Inexpensive, reliable, planar RFID tag structure and method for making same
DE10015484C2 (de) * 2000-03-29 2002-10-24 Fraunhofer Ges Forschung Verfahren zum kontaktlosen Test von Chips sowie Vorrichtung zur Durchführung dieses Verfahrens
US6407546B1 (en) 2000-04-07 2002-06-18 Cuong Duy Le Non-contact technique for using an eddy current probe for measuring the thickness of metal layers disposed on semi-conductor wafer products
CA2308820A1 (en) * 2000-05-15 2001-11-15 The Governors Of The University Of Alberta Wireless radio frequency technique design and method for testing of integrated circuits and wafers
JP4717295B2 (ja) 2000-10-04 2011-07-06 株式会社半導体エネルギー研究所 ドライエッチング装置及びエッチング方法
JP4552069B2 (ja) * 2001-01-04 2010-09-29 株式会社日立製作所 画像表示装置およびその駆動方法
US6582980B2 (en) * 2001-01-30 2003-06-24 Eastman Kodak Company System for integrating digital control with common substrate display devices
WO2002063675A1 (en) * 2001-02-02 2002-08-15 Hitachi, Ltd. Integrated circuit, method of testing integrated circuit and method of manufacturing integrated circuit
US6850080B2 (en) * 2001-03-19 2005-02-01 Semiconductor Energy Laboratory Co., Ltd. Inspection method and inspection apparatus
US6512482B1 (en) 2001-03-20 2003-01-28 Xilinx, Inc. Method and apparatus using a semiconductor die integrated antenna structure
US6759850B2 (en) 2001-03-28 2004-07-06 Orbotech Ltd. System and method for non-contact electrical testing employing a CAM derived reference
JP3761470B2 (ja) 2001-04-04 2006-03-29 北斗電子工業株式会社 非接触電圧計測方法及び装置並びに検出プローブ
JP2002340989A (ja) 2001-05-15 2002-11-27 Semiconductor Energy Lab Co Ltd 測定方法、検査方法及び検査装置
KR100867726B1 (ko) 2002-11-21 2008-11-10 삼성전자주식회사 액정표시장치의 제조 방법
US7250781B2 (en) 2002-12-19 2007-07-31 Fuji Xerox Co., Ltd. Circuit board inspection device
KR100528695B1 (ko) 2003-05-06 2005-11-16 엘지.필립스 엘시디 주식회사 평판표시장치의 검사방법 및 장치
JP4138584B2 (ja) 2003-06-11 2008-08-27 ヤンマー農機株式会社 播種装置
EP1665362A2 (en) 2003-08-25 2006-06-07 Tau-Metrix, Inc. Technique for evaluating a fabrication of a semiconductor component and wafer
KR101270180B1 (ko) 2004-01-30 2013-05-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 검사장치 및 검사방법과, 반도체장치 제작방법
US7378837B2 (en) 2004-06-07 2008-05-27 General Electric Company Method and system for calibrating a micro-electromechanical system (MEMS) based sensor using tunneling current sensing
JP4264745B2 (ja) 2004-12-14 2009-05-20 独立行政法人産業技術総合研究所 酵素とビオチン修飾異方性高分子微粒子、これを用いた微小管と微粒子のコンプレックス及びａｔｐ自己供給するナノバイオマシン

Also Published As

Publication number Publication date
KR20070032980A (ko) 2007-03-23
MY134535A (en) 2007-12-31
CN1790671A (zh) 2006-06-21
KR20020074415A (ko) 2002-09-30
US8729548B2 (en) 2014-05-20
US20020132383A1 (en) 2002-09-19
CN101241916B (zh) 2011-01-26
US20060263952A1 (en) 2006-11-23
US7105365B2 (en) 2006-09-12
SG117406A1 (en) 2005-12-29
US7674635B2 (en) 2010-03-09
US9047796B2 (en) 2015-06-02
CN101241916A (zh) 2008-08-13
US20150348855A1 (en) 2015-12-03
KR100825911B1 (ko) 2008-04-28
CN1375859A (zh) 2002-10-23
US20140252971A1 (en) 2014-09-11
CN1790671B (zh) 2012-03-21
JP2003031814A (ja) 2003-01-31
KR100862044B1 (ko) 2008-10-09
JP4271404B2 (ja) 2009-06-03
TW200625536A (en) 2006-07-16
CN100372051C (zh) 2008-02-27
TWI286367B (en) 2007-09-01
US20100157165A1 (en) 2010-06-24

Similar Documents

Publication Publication Date Title
SG142160A1 (en) Method of manufacturing a semiconductor device
WO2003036722A1 (fr) Circuit integre a semi-conducteur, dispositif electronique dans lequel ce circuit integre est incorpore et procede d'economie d'energie
TW373196B (en) A micromagnetic device for power processing applications and method of manufacture therefor
WO2004073177A3 (en) Inductively powered apparatus
AU2002314091A1 (en) Magnetic field sensor
EP1030266A3 (en) Noncontact type IC card and system therefor
ATE450915T1 (de) Steuerung von induktiven energietransfersystemen
EP1574865A4 (en) PRESSING ELEMENT AND DEVICE FOR HANDLING ELECTRONIC COMPONENTS
EP1278245A4 (en) METHOD AND DEVICE FOR PRODUCING A BONDED DIELECTRIC SEPARATION WAFERS
WO2003021667A3 (en) Package with integrated inductor and/or capacitor
TW200731141A (en) Circuit incorporated into (contactless) electronic identification device and method therefor
WO2019166455A3 (en) Electronic power switch drive module
US20090140359A1 (en) Semiconductor device, method of manufacturing the same, and signal transmitting/receiving method using the semiconductor device
JP2000058871A (ja) 電子機器の集積回路
US10679862B2 (en) Contactless electric power supply mechanism and method for rotary table, and wafer rotating and holding device
WO2013011729A1 (ja) 非接触給電装置
EP1231636A3 (en) Semiconductor device, production method therefor, and electrophotographic apparatus
TWI264624B (en) Surface-mounted antenna apparatus
TW200517047A (en) Active shielding for a circuit comprising magnetically sensitive materials
DE60103930D1 (de) Elektrostatischevorrichtung zur greifen eines wafers
MY132660A (en) Voltage measuring method, electrical test method and apparatus, semiconductor device manufacturing method and device substrate manufacturing method
TW200617410A (en) Semiconductor wafer and inspection method thereof
TW200601918A (en) Semiconductor device and manufacturing method for the same
WO2002084312A3 (en) Measuring back-side voltage of an integrated circuit
BRPI0414485A (pt) consumidor e sistema