SG11202001075PA - Charge trap structure with barrier to blocking region - Google Patents

Charge trap structure with barrier to blocking region

Info

Publication number
SG11202001075PA
SG11202001075PA SG11202001075PA SG11202001075PA SG11202001075PA SG 11202001075P A SG11202001075P A SG 11202001075PA SG 11202001075P A SG11202001075P A SG 11202001075PA SG 11202001075P A SG11202001075P A SG 11202001075PA SG 11202001075P A SG11202001075P A SG 11202001075PA
Authority
SG
Singapore
Prior art keywords
barrier
charge trap
blocking region
trap structure
blocking
Prior art date
Application number
SG11202001075PA
Other languages
English (en)
Inventor
Chris M Carlson
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of SG11202001075PA publication Critical patent/SG11202001075PA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76885—By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/41—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region of a memory region comprising a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Geophysics And Detection Of Objects (AREA)
SG11202001075PA 2017-08-11 2018-08-02 Charge trap structure with barrier to blocking region SG11202001075PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/675,223 US10680006B2 (en) 2017-08-11 2017-08-11 Charge trap structure with barrier to blocking region
PCT/US2018/045015 WO2019032376A1 (en) 2017-08-11 2018-08-02 CHARGE TRAP STRUCTURE COMPRISING A BARRIER AT A BLOCKING AREA

Publications (1)

Publication Number Publication Date
SG11202001075PA true SG11202001075PA (en) 2020-03-30

Family

ID=65272520

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202001075PA SG11202001075PA (en) 2017-08-11 2018-08-02 Charge trap structure with barrier to blocking region

Country Status (8)

Country Link
US (3) US10680006B2 (ja)
EP (1) EP3665724A4 (ja)
JP (3) JP2020530659A (ja)
KR (2) KR102334990B1 (ja)
CN (1) CN111149205B (ja)
SG (1) SG11202001075PA (ja)
TW (2) TWI847373B (ja)
WO (1) WO2019032376A1 (ja)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9136128B2 (en) 2011-08-31 2015-09-15 Micron Technology, Inc. Methods and apparatuses including memory cells with air gaps and other low dielectric constant materials
US10446572B2 (en) 2017-08-11 2019-10-15 Micron Technology, Inc. Void formation for charge trap structures
US10453855B2 (en) 2017-08-11 2019-10-22 Micron Technology, Inc. Void formation in charge trap structures
US10680006B2 (en) 2017-08-11 2020-06-09 Micron Technology, Inc. Charge trap structure with barrier to blocking region
US10164009B1 (en) 2017-08-11 2018-12-25 Micron Technology, Inc. Memory device including voids between control gates
US10847367B2 (en) 2018-12-28 2020-11-24 Micron Technology, Inc. Methods of forming tungsten structures
US11211399B2 (en) 2019-08-15 2021-12-28 Micron Technology, Inc. Electronic apparatus with an oxide-only tunneling structure by a select gate tier, and related methods
US20220139960A1 (en) * 2019-09-12 2022-05-05 Sandisk Technologies Llc Three-dimensional memory device containing ferroelectric-assisted memory elements and method of making the same
US11244903B2 (en) 2019-12-30 2022-02-08 Micron Technology, Inc. Tungsten structures and methods of forming the structures
CN114242729A (zh) * 2020-09-09 2022-03-25 联华电子股份有限公司 三维存储器元件
US11956954B2 (en) 2020-11-09 2024-04-09 Micron Technology, Inc. Electronic devices comprising reduced charge confinement regions in storage nodes of pillars and related methods
CN112103292B (zh) * 2020-11-10 2021-02-12 长江先进存储产业创新中心有限责任公司 存储器及其制作方法
US20220310525A1 (en) * 2021-03-29 2022-09-29 Micron Technology, Inc. Memory device including control gates having tungsten structure
US20230057852A1 (en) * 2021-08-23 2023-02-23 Micron Technology, Inc. Integrated Circuitry Comprising A Memory Array Comprising Strings Of Memory Cells And Method Used In Forming A Memory Array Comprising Strings Of Memory Cells

Family Cites Families (123)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5292677A (en) 1992-09-18 1994-03-08 Micron Technology, Inc. Reduced mask CMOS process for fabricating stacked capacitor multi-megabit dynamic random access memories utilizing single etch stop layer for contacts
KR100331554B1 (ko) 1999-09-27 2002-04-06 윤종용 인접된 커패시터 사이의 크로스토크가 억제된 반도체 소자의 커패시터 어레이 및 그 제조방법
US6639835B2 (en) * 2000-02-29 2003-10-28 Micron Technology, Inc. Static NVRAM with ultra thin tunnel oxides
TW497120B (en) 2000-03-06 2002-08-01 Toshiba Corp Transistor, semiconductor device and manufacturing method of semiconductor device
TW486773B (en) 2001-05-02 2002-05-11 Taiwan Semiconductor Mfg Method for forming air gap in bit line structure
TW490748B (en) 2001-05-04 2002-06-11 Macronix Int Co Ltd Flash memory structure
US7253467B2 (en) 2001-06-28 2007-08-07 Samsung Electronics Co., Ltd. Non-volatile semiconductor memory devices
US6674138B1 (en) 2001-12-31 2004-01-06 Advanced Micro Devices, Inc. Use of high-k dielectric materials in modified ONO structure for semiconductor devices
US6795348B2 (en) * 2002-05-29 2004-09-21 Micron Technology, Inc. Method and apparatus for erasing flash memory
US6794764B1 (en) 2003-03-05 2004-09-21 Advanced Micro Devices, Inc. Charge-trapping memory arrays resistant to damage from contact hole information
US7045849B2 (en) 2003-05-21 2006-05-16 Sandisk Corporation Use of voids between elements in semiconductor structures for isolation
JP2005026589A (ja) 2003-07-04 2005-01-27 Toshiba Corp 半導体記憶装置及びその製造方法
JP2006302950A (ja) 2005-04-15 2006-11-02 Renesas Technology Corp 不揮発性半導体装置および不揮発性半導体装置の製造方法
US7436018B2 (en) 2005-08-11 2008-10-14 Micron Technology, Inc. Discrete trap non-volatile multi-functional memory device
US8436410B2 (en) 2005-10-31 2013-05-07 Samsung Electronics Co., Ltd. Semiconductor devices comprising a plurality of gate structures
KR100784860B1 (ko) 2005-10-31 2007-12-14 삼성전자주식회사 비휘발성 메모리 장치 및 그 제조 방법
EP1804293A1 (en) 2005-12-30 2007-07-04 STMicroelectronics S.r.l. Process for manufacturing a non volatile memory electronic device
JP4762041B2 (ja) 2006-04-24 2011-08-31 株式会社東芝 不揮発性半導体メモリ
JP2007299975A (ja) 2006-05-01 2007-11-15 Renesas Technology Corp 半導体装置およびその製造方法
JP4282692B2 (ja) 2006-06-27 2009-06-24 株式会社東芝 半導体装置の製造方法
JP4764288B2 (ja) 2006-08-22 2011-08-31 株式会社東芝 半導体記憶装置及びその製造方法
US8106376B2 (en) 2006-10-24 2012-01-31 Macronix International Co., Ltd. Method for manufacturing a resistor random access memory with a self-aligned air gap insulator
US8686490B2 (en) 2006-12-20 2014-04-01 Sandisk Corporation Electron blocking layers for electronic devices
JP2008192991A (ja) 2007-02-07 2008-08-21 Toshiba Corp 半導体装置
KR100855993B1 (ko) 2007-04-03 2008-09-02 삼성전자주식회사 전하 트랩 플래시 메모리 소자 및 그 제조방법
JP2008283045A (ja) 2007-05-11 2008-11-20 Toshiba Corp 半導体装置の製造方法および半導体装置
JP2008283095A (ja) 2007-05-14 2008-11-20 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
US20090001443A1 (en) 2007-06-29 2009-01-01 Intel Corporation Non-volatile memory cell with multi-layer blocking dielectric
JP4594973B2 (ja) 2007-09-26 2010-12-08 株式会社東芝 不揮発性半導体記憶装置
JP5148242B2 (ja) 2007-10-29 2013-02-20 株式会社東芝 不揮発性半導体記憶装置、及びその製造方法
JP2009123743A (ja) 2007-11-12 2009-06-04 Panasonic Corp 半導体装置の製造方法
JP2009212218A (ja) 2008-03-03 2009-09-17 Toshiba Corp 半導体記憶装置及びその製造方法
JP2009302116A (ja) 2008-06-10 2009-12-24 Toshiba Corp 半導体装置およびその製造方法
KR101052921B1 (ko) 2008-07-07 2011-07-29 주식회사 하이닉스반도체 버티컬 플로팅 게이트를 구비하는 플래시 메모리소자의제조방법
JP4956500B2 (ja) 2008-07-22 2012-06-20 株式会社東芝 半導体記憶装置及びその製造方法
US20100078758A1 (en) * 2008-09-29 2010-04-01 Sekar Deepak C Miim diodes
JP5515281B2 (ja) 2008-12-03 2014-06-11 ソニー株式会社 薄膜トランジスタ、表示装置、電子機器および薄膜トランジスタの製造方法
JP2010165803A (ja) 2009-01-14 2010-07-29 Toshiba Corp 半導体記憶装置の製造方法及び半導体記憶装置
US8860124B2 (en) 2009-01-15 2014-10-14 Macronix International Co., Ltd. Depletion-mode charge-trapping flash device
JP2010177279A (ja) 2009-01-27 2010-08-12 Toshiba Corp Ｎａｎｄ型フラッシュメモリおよびその製造方法
JP5395460B2 (ja) 2009-02-25 2014-01-22 株式会社東芝 不揮発性半導体記憶装置、及びその製造方法
US8258034B2 (en) 2009-08-26 2012-09-04 Micron Technology, Inc. Charge-trap based memory
KR101603731B1 (ko) 2009-09-29 2016-03-16 삼성전자주식회사 버티칼 낸드 전하 트랩 플래시 메모리 디바이스 및 제조방법
JP2011165815A (ja) 2010-02-08 2011-08-25 Toshiba Corp 不揮発性半導体記憶装置
TW202315049A (zh) * 2010-02-16 2023-04-01 凡 歐貝克 製造３ｄ半導體晶圓的方法
US8455940B2 (en) 2010-05-24 2013-06-04 Samsung Electronics Co., Ltd. Nonvolatile memory device, method of manufacturing the nonvolatile memory device, and memory module and system including the nonvolatile memory device
KR101660432B1 (ko) 2010-06-07 2016-09-27 삼성전자 주식회사 수직 구조의 반도체 메모리 소자
US8546239B2 (en) 2010-06-11 2013-10-01 Sandisk Technologies Inc. Methods of fabricating non-volatile memory with air gaps
US8946048B2 (en) 2010-06-19 2015-02-03 Sandisk Technologies Inc. Method of fabricating non-volatile memory with flat cell structures and air gap isolation
US8603890B2 (en) 2010-06-19 2013-12-10 Sandisk Technologies Inc. Air gap isolation in non-volatile memory
US8492224B2 (en) 2010-06-20 2013-07-23 Sandisk Technologies Inc. Metal control gate structures and air gap isolation in non-volatile memory
US8187936B2 (en) 2010-06-30 2012-05-29 SanDisk Technologies, Inc. Ultrahigh density vertical NAND memory device and method of making thereof
KR20120007838A (ko) 2010-07-15 2012-01-25 삼성전자주식회사 수직형 비휘발성 메모리 소자 및 그 제조방법
KR101699515B1 (ko) 2010-09-01 2017-02-14 삼성전자주식회사 3차원 반도체 장치 및 그 제조 방법
JP2013543266A (ja) 2010-10-18 2013-11-28 アイメック 縦型半導体メモリデバイス及びその製造方法
JP2012109450A (ja) 2010-11-18 2012-06-07 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
JP5570953B2 (ja) 2010-11-18 2014-08-13 株式会社東芝 不揮発性半導体記憶装置および不揮発性半導体記憶装置の製造方法
JP2011082581A (ja) * 2011-01-25 2011-04-21 Tokyo Electron Ltd メモリ装置
WO2012102756A1 (en) 2011-01-25 2012-08-02 Applied Materials, Inc. Floating gates and methods of formation
JP5059204B2 (ja) 2011-02-21 2012-10-24 株式会社東芝 半導体記憶装置の製造方法
US8445347B2 (en) 2011-04-11 2013-05-21 Sandisk Technologies Inc. 3D vertical NAND and method of making thereof by front and back side processing
JP2012234980A (ja) 2011-05-02 2012-11-29 Toshiba Corp 不揮発性半導体記憶装置とその製造方法
KR20120007838U (ko) 2011-05-04 2012-11-14 김종섭 난방수 자동순환 연탄보일러
JP5613105B2 (ja) * 2011-05-27 2014-10-22 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
KR20120137861A (ko) 2011-06-13 2012-12-24 삼성전자주식회사 비휘발성 기억 소자 및 그 제조 방법
US9136128B2 (en) 2011-08-31 2015-09-15 Micron Technology, Inc. Methods and apparatuses including memory cells with air gaps and other low dielectric constant materials
JP2013055131A (ja) * 2011-09-01 2013-03-21 Toshiba Corp 不揮発性半導体記憶装置
US8709894B2 (en) * 2011-09-16 2014-04-29 Micron Technology, Inc. 3D structured memory devices and methods for manufacturing thereof
KR102031182B1 (ko) 2011-11-29 2019-10-14 삼성전자주식회사 반도체 메모리 소자 및 그 제조방법
KR101929453B1 (ko) 2012-03-27 2018-12-14 삼성전자주식회사 반도체 소자 및 이의 제조 방법
EP2831917A4 (en) * 2012-03-31 2015-11-04 Cypress Semiconductor Corp OXIDE-NITRIDE-OXIDE STACK WITH MULTIPLE OXYNITRIDE LAYERS
KR20130116607A (ko) 2012-04-16 2013-10-24 삼성전자주식회사 3차원 반도체 메모리 장치 및 그 제조 방법
US8658499B2 (en) 2012-07-09 2014-02-25 Sandisk Technologies Inc. Three dimensional NAND device and method of charge trap layer separation and floating gate formation in the NAND device
KR101933116B1 (ko) 2012-09-13 2018-12-27 삼성전자주식회사 수직형 메모리 장치 및 그 제조 방법
JP6095951B2 (ja) 2012-11-09 2017-03-15 エスケーハイニックス株式会社ＳＫ ｈｙｎｉｘ Ｉｎｃ． 半導体装置及びその製造方法
KR20140069925A (ko) 2012-11-30 2014-06-10 에스케이하이닉스 주식회사 반도체 메모리 소자 및 그 제조방법
US8946807B2 (en) 2013-01-24 2015-02-03 Micron Technology, Inc. 3D memory
US8637817B1 (en) 2013-03-01 2014-01-28 The Rockefeller University Multi-pole ion trap for mass spectrometry
US20150137062A1 (en) * 2013-03-14 2015-05-21 Intermolecular Inc. Mimcaps with quantum wells as selector elements for crossbar memory arrays
US9184175B2 (en) 2013-03-15 2015-11-10 Micron Technology, Inc. Floating gate memory cells in vertical memory
WO2015105049A2 (en) 2014-01-10 2015-07-16 Kabushiki Kaisha Toshiba Semiconductor memory device and method for manufacturing same
KR20150085735A (ko) 2014-01-16 2015-07-24 삼성전자주식회사 반도체 소자 및 그 제조방법
US8993457B1 (en) * 2014-02-06 2015-03-31 Cypress Semiconductor Corporation Method of fabricating a charge-trapping gate stack using a CMOS process flow
KR102190647B1 (ko) 2014-02-24 2020-12-14 삼성전자주식회사 반도체 메모리 장치 및 그 제조 방법
KR102170770B1 (ko) 2014-03-03 2020-10-28 삼성전자주식회사 반도체 장치
JP2015177013A (ja) * 2014-03-14 2015-10-05 株式会社東芝 半導体記憶装置
US9773554B2 (en) * 2014-04-01 2017-09-26 Macronix International Co., Ltd. Composite impurity scheme for memory technologies
US9397110B2 (en) * 2014-05-21 2016-07-19 Macronix International Co., Ltd. 3D independent double gate flash memory
KR102248205B1 (ko) 2014-06-25 2021-05-04 삼성전자주식회사 수직 채널 및 에어 갭을 갖는 반도체 소자
US9177966B1 (en) 2014-07-08 2015-11-03 Sandisk Technologies Inc. Three dimensional NAND devices with air gap or low-k core
US9356031B2 (en) 2014-08-11 2016-05-31 Sandisk Technologies Inc. Three dimensional NAND string memory devices with voids enclosed between control gate electrodes
US9576975B2 (en) 2014-08-26 2017-02-21 Sandisk Technologies Llc Monolithic three-dimensional NAND strings and methods of fabrication thereof
US9666593B2 (en) 2014-09-29 2017-05-30 Sandisk Technologies Llc Alternating refractive index in charge-trapping film in three-dimensional memory
US9748311B2 (en) 2014-11-07 2017-08-29 Micron Technology, Inc. Cross-point memory and methods for fabrication of same
FR3030883B1 (fr) 2014-12-17 2017-12-22 Stmicroelectronics Rousset Cellule memoire a grille de selection verticale formee dans un substrat de type fdsoi
KR102263121B1 (ko) 2014-12-22 2021-06-09 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 및 그 제조 방법
US9711524B2 (en) 2015-01-13 2017-07-18 Sandisk Technologies Llc Three-dimensional memory device containing plural select gate transistors having different characteristics and method of making thereof
US20160343657A1 (en) 2015-05-22 2016-11-24 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
US9368510B1 (en) * 2015-05-26 2016-06-14 Sandisk Technologies Inc. Method of forming memory cell with high-k charge trapping layer
KR102357992B1 (ko) * 2015-05-26 2022-02-04 삼성전자주식회사 반도체 장치
JP6343256B2 (ja) 2015-05-29 2018-06-13 東芝メモリ株式会社 半導体装置及びその製造方法
US9455261B1 (en) 2015-07-10 2016-09-27 Micron Technology, Inc. Integrated structures
TWI627733B (zh) 2015-07-24 2018-06-21 旺宏電子股份有限公司 記憶體元件及其製作方法
US9659957B2 (en) * 2015-08-26 2017-05-23 Kabushiki Kaisha Toshiba Semiconductor memory device and method for manufacturing same
KR102437416B1 (ko) 2015-08-28 2022-08-30 삼성전자주식회사 3차원 반도체 메모리 장치
KR102509915B1 (ko) * 2015-08-31 2023-03-15 삼성전자주식회사 반도체 메모리 소자
KR102413766B1 (ko) 2015-09-08 2022-06-27 삼성전자주식회사 비휘발성 메모리 장치 및 그의 제조 방법
US9997533B2 (en) 2015-10-06 2018-06-12 Toshiba Memory Corporation Semiconductor device and method for manufacturing same
KR102435524B1 (ko) * 2015-10-21 2022-08-23 삼성전자주식회사 반도체 메모리 장치
US9646989B1 (en) 2015-11-18 2017-05-09 Kabushiki Kaisha Toshiba Three-dimensional memory device
US9570464B1 (en) 2015-12-15 2017-02-14 Kabushiki Kaisha Toshiba Method for manufacturing semiconductor device
JP6595357B2 (ja) * 2016-02-01 2019-10-23 東芝メモリ株式会社 メモリデバイス
US9865616B2 (en) * 2016-02-09 2018-01-09 Toshiba Memory Corporation Semiconductor memory device and method for manufacturing same
US9679907B1 (en) 2016-02-29 2017-06-13 Sandisk Technologies Llc Three-dimensional memory device with charge-trapping-free gate dielectric for top select gate electrode and method of making thereof
US20170278851A1 (en) * 2016-03-23 2017-09-28 Kabushiki Kaisha Toshiba Semiconductor memory device
US9748262B1 (en) 2016-04-13 2017-08-29 Macronix International Co., Ltd. Memory structure and manufacturing method of the same
US9859298B1 (en) 2016-06-23 2018-01-02 Sandisk Technologies Llc Amorphous silicon layer in memory device which reduces neighboring word line interference
US9960045B1 (en) 2017-02-02 2018-05-01 Applied Materials, Inc. Charge-trap layer separation and word-line isolation for enhanced 3-D NAND structure
US10269824B2 (en) 2017-04-01 2019-04-23 Intel Corporation Non-volatile memory structures having multi-layer conductive channels
US10446572B2 (en) 2017-08-11 2019-10-15 Micron Technology, Inc. Void formation for charge trap structures
US10164009B1 (en) 2017-08-11 2018-12-25 Micron Technology, Inc. Memory device including voids between control gates
US10680006B2 (en) 2017-08-11 2020-06-09 Micron Technology, Inc. Charge trap structure with barrier to blocking region
US10453855B2 (en) 2017-08-11 2019-10-22 Micron Technology, Inc. Void formation in charge trap structures

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