FR3030883B1 - Cellule memoire a grille de selection verticale formee dans un substrat de type fdsoi - Google Patents

Cellule memoire a grille de selection verticale formee dans un substrat de type fdsoi

Info

Publication number
FR3030883B1
FR3030883B1 FR1462642A FR1462642A FR3030883B1 FR 3030883 B1 FR3030883 B1 FR 3030883B1 FR 1462642 A FR1462642 A FR 1462642A FR 1462642 A FR1462642 A FR 1462642A FR 3030883 B1 FR3030883 B1 FR 3030883B1
Authority
FR
France
Prior art keywords
memory cell
type substrate
cell formed
vertical selection
selection grid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1462642A
Other languages
English (en)
Other versions
FR3030883A1 (fr
Inventor
Arnaud Regnier
Jean-Michel Mirabel
Stephan Niel
Rosa Francesco La
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Rousset SAS
Original Assignee
STMicroelectronics Rousset SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Rousset SAS filed Critical STMicroelectronics Rousset SAS
Priority to FR1462642A priority Critical patent/FR3030883B1/fr
Priority to US14/854,542 priority patent/US9461129B2/en
Priority to CN201910288732.8A priority patent/CN110265076B/zh
Priority to CN201510617909.6A priority patent/CN105720060B/zh
Priority to CN201520749262.8U priority patent/CN205428927U/zh
Publication of FR3030883A1 publication Critical patent/FR3030883A1/fr
Priority to US15/252,090 priority patent/US9691866B2/en
Application granted granted Critical
Publication of FR3030883B1 publication Critical patent/FR3030883B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H01L29/42336—Gate electrodes for transistors with a floating gate with one gate at least partly formed in a trench
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H01L29/42328—Gate electrodes for transistors with a floating gate with at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7885—Hot carrier injection from the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7889—Vertical transistors, i.e. transistors having source and drain not in the same horizontal plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
FR1462642A 2014-12-17 2014-12-17 Cellule memoire a grille de selection verticale formee dans un substrat de type fdsoi Expired - Fee Related FR3030883B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR1462642A FR3030883B1 (fr) 2014-12-17 2014-12-17 Cellule memoire a grille de selection verticale formee dans un substrat de type fdsoi
US14/854,542 US9461129B2 (en) 2014-12-17 2015-09-15 Memory cell having a vertical selection gate formed in an FDSOI substrate
CN201910288732.8A CN110265076B (zh) 2014-12-17 2015-09-24 具有在fdsoi衬底中形成的垂直选择栅极的存储器单元
CN201510617909.6A CN105720060B (zh) 2014-12-17 2015-09-24 具有在fdsoi衬底中形成的垂直选择栅极的存储器单元
CN201520749262.8U CN205428927U (zh) 2014-12-17 2015-09-24 形成于半导体衬底中的存储器单元、存储器单元的群组及存储器电路
US15/252,090 US9691866B2 (en) 2014-12-17 2016-08-30 Memory cell having a vertical selection gate formed in an FDSOI substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1462642A FR3030883B1 (fr) 2014-12-17 2014-12-17 Cellule memoire a grille de selection verticale formee dans un substrat de type fdsoi

Publications (2)

Publication Number Publication Date
FR3030883A1 FR3030883A1 (fr) 2016-06-24
FR3030883B1 true FR3030883B1 (fr) 2017-12-22

Family

ID=52477965

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1462642A Expired - Fee Related FR3030883B1 (fr) 2014-12-17 2014-12-17 Cellule memoire a grille de selection verticale formee dans un substrat de type fdsoi

Country Status (3)

Country Link
US (2) US9461129B2 (fr)
CN (3) CN110265076B (fr)
FR (1) FR3030883B1 (fr)

Families Citing this family (14)

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FR3054920B1 (fr) * 2016-08-05 2018-10-26 Stmicroelectronics (Rousset) Sas Dispositif compact de memoire non volatile
US9947664B1 (en) * 2016-10-14 2018-04-17 International Business Machines Corporation Semiconductor device and method of forming the semiconductor device
CN108806751B (zh) * 2017-04-26 2021-04-09 中芯国际集成电路制造(上海)有限公司 多次可程式闪存单元阵列及其操作方法、存储器件
US10680006B2 (en) 2017-08-11 2020-06-09 Micron Technology, Inc. Charge trap structure with barrier to blocking region
US10446572B2 (en) 2017-08-11 2019-10-15 Micron Technology, Inc. Void formation for charge trap structures
US10164009B1 (en) * 2017-08-11 2018-12-25 Micron Technology, Inc. Memory device including voids between control gates
FR3071355B1 (fr) 2017-09-20 2019-08-30 Stmicroelectronics (Rousset) Sas Cellule-memoire eeprom compacte
US10879256B2 (en) * 2017-11-22 2020-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. Embedded memory using SOI structures and methods
CN109036487B (zh) * 2018-07-20 2021-03-02 福州大学 一种基于短沟道有机晶体管的多级光存储器及其制备方法
US11062745B2 (en) * 2018-09-27 2021-07-13 Taiwan Semiconductor Manufacturing Company, Ltd. FDSOI sense amplifier configuration in a memory device
TWI747292B (zh) * 2019-07-12 2021-11-21 台灣積體電路製造股份有限公司 半導體裝置
CN111341776B (zh) * 2020-03-18 2023-11-14 上海华虹宏力半导体制造有限公司 存储器及其形成方法、存储器单元阵列及其驱动方法
US11527630B2 (en) * 2020-06-24 2022-12-13 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method for fabricating the same
US11916109B2 (en) 2022-03-08 2024-02-27 Globalfoundries U.S. Inc. Bipolar transistor structures with base having varying horizontal width and methods to form same

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JPH05211338A (ja) * 1991-10-09 1993-08-20 Mitsubishi Electric Corp 不揮発性半導体装置
JP3808700B2 (ja) * 2000-12-06 2006-08-16 株式会社東芝 半導体装置及びその製造方法
DE10204871A1 (de) * 2002-02-06 2003-08-21 Infineon Technologies Ag Kondensatorlose 1-Transistor-DRAM-Zelle und Herstellungsverfahren
US6885586B2 (en) * 2002-09-19 2005-04-26 Actrans System Inc. Self-aligned split-gate NAND flash memory and fabrication process
US6894339B2 (en) * 2003-01-02 2005-05-17 Actrans System Inc. Flash memory with trench select gate and fabrication process
US7049652B2 (en) * 2003-12-10 2006-05-23 Sandisk Corporation Pillar cell flash memory technology
US7020018B2 (en) * 2004-04-22 2006-03-28 Solid State System Co., Ltd. Nonvolatile memory device and method for fabricating the same
US20060186456A1 (en) 2005-02-18 2006-08-24 Burnett James D NVM cell on SOI and method of manufacture
US7829938B2 (en) * 2005-07-14 2010-11-09 Micron Technology, Inc. High density NAND non-volatile memory device
US7495279B2 (en) 2005-09-09 2009-02-24 Infineon Technologies Ag Embedded flash memory devices on SOI substrates and methods of manufacture thereof
US7329596B2 (en) * 2005-10-26 2008-02-12 International Business Machines Corporation Method for tuning epitaxial growth by interfacial doping and structure including same
US8101492B2 (en) * 2009-09-23 2012-01-24 Infineon Technologies Ag Method for making semiconductor device
FR2987697A1 (fr) * 2012-03-05 2013-09-06 St Microelectronics Rousset Procede de fabrication d'une memoire non volatile
US8901634B2 (en) * 2012-03-05 2014-12-02 Stmicroelectronics (Rousset) Sas Nonvolatile memory cells with a vertical selection gate of variable depth
US8940604B2 (en) * 2012-03-05 2015-01-27 Stmicroelectronics (Rousset) Sas Nonvolatile memory comprising mini wells at a floating potential

Also Published As

Publication number Publication date
FR3030883A1 (fr) 2016-06-24
CN110265076A (zh) 2019-09-20
US20160181265A1 (en) 2016-06-23
US9461129B2 (en) 2016-10-04
CN105720060A (zh) 2016-06-29
CN105720060B (zh) 2019-05-03
US9691866B2 (en) 2017-06-27
US20160372561A1 (en) 2016-12-22
CN110265076B (zh) 2023-08-01
CN205428927U (zh) 2016-08-03

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