SG11201608905XA - Thermal processing susceptor - Google Patents
Thermal processing susceptorInfo
- Publication number
- SG11201608905XA SG11201608905XA SG11201608905XA SG11201608905XA SG11201608905XA SG 11201608905X A SG11201608905X A SG 11201608905XA SG 11201608905X A SG11201608905X A SG 11201608905XA SG 11201608905X A SG11201608905X A SG 11201608905XA SG 11201608905X A SG11201608905X A SG 11201608905XA
- Authority
- SG
- Singapore
- Prior art keywords
- thermal processing
- processing susceptor
- susceptor
- thermal
- processing
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C13/00—Means for manipulating or holding work, e.g. for separate articles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C13/00—Means for manipulating or holding work, e.g. for separate articles
- B05C13/02—Means for manipulating or holding work, e.g. for separate articles for particular articles
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67326—Horizontal carrier comprising wall type elements whereby the substrates are vertically supported, e.g. comprising sidewalls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
- Investigating Or Analyzing Materials Using Thermal Means (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201462001562P | 2014-05-21 | 2014-05-21 | |
PCT/US2015/028054 WO2015179081A1 (en) | 2014-05-21 | 2015-04-28 | Thermal processing susceptor |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201608905XA true SG11201608905XA (en) | 2016-12-29 |
Family
ID=54554518
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201608905XA SG11201608905XA (en) | 2014-05-21 | 2015-04-28 | Thermal processing susceptor |
SG10201810390TA SG10201810390TA (en) | 2014-05-21 | 2015-04-28 | Thermal processing susceptor |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201810390TA SG10201810390TA (en) | 2014-05-21 | 2015-04-28 | Thermal processing susceptor |
Country Status (6)
Country | Link |
---|---|
US (4) | US10062598B2 (ko) |
KR (3) | KR20230116078A (ko) |
CN (2) | CN106463445B (ko) |
SG (2) | SG11201608905XA (ko) |
TW (1) | TWI651793B (ko) |
WO (1) | WO2015179081A1 (ko) |
Families Citing this family (195)
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---|---|---|---|---|
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KR102605121B1 (ko) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (ko) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR20210088723A (ko) | 2018-12-03 | 2021-07-14 | 어플라이드 머티어리얼스, 인코포레이티드 | 척킹 및 아크 발생 성능이 개선된 정전 척 설계 |
KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
JP2020096183A (ja) | 2018-12-14 | 2020-06-18 | エーエスエム・アイピー・ホールディング・ベー・フェー | 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム |
TWI819180B (zh) | 2019-01-17 | 2023-10-21 | 荷蘭商Asm 智慧財產控股公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
KR20200091543A (ko) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
JP2020136677A (ja) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための周期的堆積方法および装置 |
KR102626263B1 (ko) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치 |
KR102638425B1 (ko) | 2019-02-20 | 2024-02-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 표면 내에 형성된 오목부를 충진하기 위한 방법 및 장치 |
US11482533B2 (en) | 2019-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
JP2020133004A (ja) | 2019-02-22 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材を処理するための基材処理装置および方法 |
KR20200108242A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
JP2020167398A (ja) | 2019-03-28 | 2020-10-08 | エーエスエム・アイピー・ホールディング・ベー・フェー | ドアオープナーおよびドアオープナーが提供される基材処理装置 |
KR20200116855A (ko) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
KR20200130118A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 비정질 탄소 중합체 막을 개질하는 방법 |
KR20200130121A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
KR20200130652A (ko) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
US11589606B1 (en) * | 2019-05-14 | 2023-02-28 | Bfy Brands, Llc | Apparatus and methods for making food products with improved heating components |
JP2020188255A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
KR20200141002A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법 |
KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
KR20210005515A (ko) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
JP2021015791A (ja) | 2019-07-09 | 2021-02-12 | エーエスエム アイピー ホールディング ビー.ブイ. | 同軸導波管を用いたプラズマ装置、基板処理方法 |
CN112216646A (zh) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
KR20210010307A (ko) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210010820A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
KR20210010816A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 라디칼 보조 점화 플라즈마 시스템 및 방법 |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
CN112242296A (zh) | 2019-07-19 | 2021-01-19 | Asm Ip私人控股有限公司 | 形成拓扑受控的无定形碳聚合物膜的方法 |
TW202113936A (zh) | 2019-07-29 | 2021-04-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於利用n型摻雜物及/或替代摻雜物選擇性沉積以達成高摻雜物併入之方法 |
CN112309899A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112309900A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
CN112323048B (zh) | 2019-08-05 | 2024-02-09 | Asm Ip私人控股有限公司 | 用于化学源容器的液位传感器 |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
JP2021031769A (ja) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | 成膜原料混合ガス生成装置及び成膜装置 |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210024420A (ko) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
KR20210029090A (ko) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
KR20210029663A (ko) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
TW202129060A (zh) | 2019-10-08 | 2021-08-01 | 荷蘭商Asm Ip控股公司 | 基板處理裝置、及基板處理方法 |
TW202115273A (zh) | 2019-10-10 | 2021-04-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成光阻底層之方法及包括光阻底層之結構 |
KR20210045930A (ko) | 2019-10-16 | 2021-04-27 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 산화물의 토폴로지-선택적 막의 형성 방법 |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (ko) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
US11764101B2 (en) * | 2019-10-24 | 2023-09-19 | ASM IP Holding, B.V. | Susceptor for semiconductor substrate processing |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (ko) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (ko) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
US11450529B2 (en) | 2019-11-26 | 2022-09-20 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
CN112951697A (zh) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885692A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885693A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
JP2021090042A (ja) | 2019-12-02 | 2021-06-10 | エーエスエム アイピー ホールディング ビー.ブイ. | 基板処理装置、基板処理方法 |
KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
JP2021097227A (ja) | 2019-12-17 | 2021-06-24 | エーエスエム・アイピー・ホールディング・ベー・フェー | 窒化バナジウム層および窒化バナジウム層を含む構造体を形成する方法 |
US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
JP2021109175A (ja) | 2020-01-06 | 2021-08-02 | エーエスエム・アイピー・ホールディング・ベー・フェー | ガス供給アセンブリ、その構成要素、およびこれを含む反応器システム |
KR20210095050A (ko) | 2020-01-20 | 2021-07-30 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 및 박막 표면 개질 방법 |
TW202130846A (zh) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成包括釩或銦層的結構之方法 |
TW202146882A (zh) | 2020-02-04 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 驗證一物品之方法、用於驗證一物品之設備、及用於驗證一反應室之系統 |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
CN115087758A (zh) | 2020-02-11 | 2022-09-20 | 朗姆研究公司 | 用于控制晶片晶边/边缘上的沉积的承载环设计 |
US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
TW202203344A (zh) | 2020-02-28 | 2022-01-16 | 荷蘭商Asm Ip控股公司 | 專用於零件清潔的系統 |
US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
KR20210116240A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 조절성 접합부를 갖는 기판 핸들링 장치 |
CN113394086A (zh) | 2020-03-12 | 2021-09-14 | Asm Ip私人控股有限公司 | 用于制造具有目标拓扑轮廓的层结构的方法 |
TW202143380A (zh) * | 2020-03-21 | 2021-11-16 | 美商應用材料股份有限公司 | 用於快速氣體交換的基座幾何形狀 |
KR20210124042A (ko) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 |
TW202146689A (zh) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | 阻障層形成方法及半導體裝置的製造方法 |
TW202145344A (zh) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
CN111490002B (zh) * | 2020-04-21 | 2023-06-27 | 錼创显示科技股份有限公司 | 载盘结构 |
CN113555279A (zh) | 2020-04-24 | 2021-10-26 | Asm Ip私人控股有限公司 | 形成含氮化钒的层的方法及包含其的结构 |
KR20210132600A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템 |
TW202146831A (zh) | 2020-04-24 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法 |
KR20210134226A (ko) | 2020-04-29 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | 고체 소스 전구체 용기 |
KR20210134869A (ko) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Foup 핸들러를 이용한 foup의 빠른 교환 |
KR20210141379A (ko) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 반응기 시스템용 레이저 정렬 고정구 |
TW202147383A (zh) | 2020-05-19 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 基材處理設備 |
KR20210145078A (ko) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법 |
KR20210145080A (ko) | 2020-05-22 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | 과산화수소를 사용하여 박막을 증착하기 위한 장치 |
TW202201602A (zh) | 2020-05-29 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
TW202218133A (zh) | 2020-06-24 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成含矽層之方法 |
TW202217953A (zh) | 2020-06-30 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
KR20220010438A (ko) | 2020-07-17 | 2022-01-25 | 에이에스엠 아이피 홀딩 비.브이. | 포토리소그래피에 사용하기 위한 구조체 및 방법 |
TW202204662A (zh) | 2020-07-20 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於沉積鉬層之方法及系統 |
TW202212623A (zh) | 2020-08-26 | 2022-04-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成金屬氧化矽層及金屬氮氧化矽層的方法、半導體結構、及系統 |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
TW202229613A (zh) | 2020-10-14 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 於階梯式結構上沉積材料的方法 |
TW202217037A (zh) | 2020-10-22 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 沉積釩金屬的方法、結構、裝置及沉積總成 |
TW202223136A (zh) | 2020-10-28 | 2022-06-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於在基板上形成層之方法、及半導體處理系統 |
KR20220076343A (ko) | 2020-11-30 | 2022-06-08 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치의 반응 챔버 내에 배열되도록 구성된 인젝터 |
US11946137B2 (en) | 2020-12-16 | 2024-04-02 | Asm Ip Holding B.V. | Runout and wobble measurement fixtures |
TW202231903A (zh) | 2020-12-22 | 2022-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成 |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
CN117089926B (zh) * | 2023-10-20 | 2024-01-16 | 杭州海乾半导体有限公司 | 一种用于提高碳化硅外延片均匀性的载具及其使用方法 |
Family Cites Families (79)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3539759A (en) * | 1968-11-08 | 1970-11-10 | Ibm | Susceptor structure in silicon epitaxy |
JPS5959876A (ja) * | 1982-09-30 | 1984-04-05 | Ushio Inc | 光照射炉の運転方法 |
JPH05238882A (ja) * | 1992-02-28 | 1993-09-17 | Toshiba Mach Co Ltd | 気相成長用サセプタ |
US5382311A (en) * | 1992-12-17 | 1995-01-17 | Tokyo Electron Limited | Stage having electrostatic chuck and plasma processing apparatus using same |
JP3004846B2 (ja) | 1993-08-20 | 2000-01-31 | 東芝セラミックス株式会社 | 気相成長装置用サセプタ |
JPH0758039A (ja) * | 1993-08-20 | 1995-03-03 | Toshiba Ceramics Co Ltd | サセプタ |
JPH09199437A (ja) * | 1996-01-12 | 1997-07-31 | Sumitomo Sitix Corp | 半導体ウェーハ支持装置 |
US6245152B1 (en) * | 1996-07-05 | 2001-06-12 | Super Silicon Crystal Research Institute Corp. | Method and apparatus for producing epitaxial wafer |
JPH10284360A (ja) * | 1997-04-02 | 1998-10-23 | Hitachi Ltd | 基板温度制御装置及び方法 |
WO1999023691A2 (en) * | 1997-11-03 | 1999-05-14 | Asm America, Inc. | Improved low mass wafer support system |
TW473904B (en) * | 2000-10-17 | 2002-01-21 | Applied Materials Inc | Chamber having substrate support |
JP2002151412A (ja) | 2000-10-30 | 2002-05-24 | Applied Materials Inc | 半導体製造装置 |
US6634882B2 (en) * | 2000-12-22 | 2003-10-21 | Asm America, Inc. | Susceptor pocket profile to improve process performance |
KR20010067805A (ko) * | 2001-03-29 | 2001-07-13 | 정기로 | 급속 열처리 장치용 에지링 |
US6529686B2 (en) * | 2001-06-06 | 2003-03-04 | Fsi International, Inc. | Heating member for combination heating and chilling apparatus, and methods |
US20050000449A1 (en) * | 2001-12-21 | 2005-01-06 | Masayuki Ishibashi | Susceptor for epitaxial growth and epitaxial growth method |
US7033445B2 (en) * | 2001-12-27 | 2006-04-25 | Asm America, Inc. | Gridded susceptor |
JP2004119859A (ja) * | 2002-09-27 | 2004-04-15 | Shin Etsu Handotai Co Ltd | サセプタ、半導体ウェーハの製造装置及び製造方法 |
JP2004128019A (ja) | 2002-09-30 | 2004-04-22 | Applied Materials Inc | プラズマ処理方法及び装置 |
JP2004128271A (ja) | 2002-10-03 | 2004-04-22 | Toyo Tanso Kk | サセプタ |
US7582166B2 (en) * | 2003-08-01 | 2009-09-01 | Sgl Carbon, Llc | Holder for supporting wafers during semiconductor manufacture |
KR100578129B1 (ko) * | 2003-09-19 | 2006-05-10 | 삼성전자주식회사 | 플라즈마 식각 장치 |
US7044476B2 (en) * | 2003-11-25 | 2006-05-16 | N&K Technology, Inc. | Compact pinlifter assembly integrated in wafer chuck |
WO2005081283A2 (en) * | 2004-02-13 | 2005-09-01 | Asm America, Inc. | Substrate support system for reduced autodoping and backside deposition |
US20050217585A1 (en) * | 2004-04-01 | 2005-10-06 | Blomiley Eric R | Substrate susceptor for receiving a substrate to be deposited upon |
US7646580B2 (en) * | 2005-02-24 | 2010-01-12 | Kyocera Corporation | Electrostatic chuck and wafer holding member and wafer treatment method |
JP4841873B2 (ja) * | 2005-06-23 | 2011-12-21 | 大日本スクリーン製造株式会社 | 熱処理用サセプタおよび熱処理装置 |
JP4666496B2 (ja) * | 2005-12-07 | 2011-04-06 | 大日本スクリーン製造株式会社 | 基板熱処理装置 |
US7573004B1 (en) * | 2006-02-21 | 2009-08-11 | Structured Materials Inc. | Filament support arrangement for substrate heating apparatus |
JP4497103B2 (ja) * | 2006-02-21 | 2010-07-07 | 住友電気工業株式会社 | ウェハ保持体およびそれを搭載したヒータユニット、ウェハプローバ |
TW200802552A (en) * | 2006-03-30 | 2008-01-01 | Sumco Techxiv Corp | Method of manufacturing epitaxial silicon wafer and apparatus thereof |
US8888950B2 (en) * | 2007-03-16 | 2014-11-18 | Charm Engineering Co., Ltd. | Apparatus for plasma processing and method for plasma processing |
US7607647B2 (en) * | 2007-03-20 | 2009-10-27 | Kla-Tencor Technologies Corporation | Stabilizing a substrate using a vacuum preload air bearing chuck |
US20080314319A1 (en) * | 2007-06-19 | 2008-12-25 | Memc Electronic Materials, Inc. | Susceptor for improving throughput and reducing wafer damage |
US20090031955A1 (en) * | 2007-07-30 | 2009-02-05 | Applied Materials, Inc. | Vacuum chucking heater of axisymmetrical and uniform thermal profile |
JP2009270143A (ja) * | 2008-05-02 | 2009-11-19 | Nuflare Technology Inc | サセプタ、半導体製造装置及び半導体製造方法 |
KR100984177B1 (ko) * | 2008-06-13 | 2010-09-28 | 엘아이지에이디피 주식회사 | 정전척 및 이를 이용한 플라즈마 이온주입장치 |
JP5107185B2 (ja) * | 2008-09-04 | 2012-12-26 | 東京エレクトロン株式会社 | 成膜装置、基板処理装置、成膜方法及びこの成膜方法を実行させるためのプログラムを記録した記録媒体 |
US8033771B1 (en) * | 2008-12-11 | 2011-10-11 | Novellus Systems, Inc. | Minimum contact area wafer clamping with gas flow for rapid wafer cooling |
JP5141541B2 (ja) * | 2008-12-24 | 2013-02-13 | 株式会社Sumco | エピタキシャルウェーハの製造方法 |
JP5359698B2 (ja) * | 2009-08-31 | 2013-12-04 | 豊田合成株式会社 | 化合物半導体の製造装置、化合物半導体の製造方法及び化合物半導体 |
US9159595B2 (en) * | 2010-02-09 | 2015-10-13 | Suss Microtec Lithography Gmbh | Thin wafer carrier |
WO2012002499A1 (ja) * | 2010-06-30 | 2012-01-05 | 株式会社アルバック | 基板処理装置及び基板冷却方法 |
US9570328B2 (en) * | 2010-06-30 | 2017-02-14 | Applied Materials, Inc. | Substrate support for use with multi-zonal heating sources |
TW201218301A (en) * | 2010-10-28 | 2012-05-01 | Applied Materials Inc | Apparatus having improved substrate temperature uniformity using direct heating methods |
US20120196242A1 (en) * | 2011-01-27 | 2012-08-02 | Applied Materials, Inc. | Substrate support with heater and rapid temperature change |
US9905443B2 (en) * | 2011-03-11 | 2018-02-27 | Applied Materials, Inc. | Reflective deposition rings and substrate processing chambers incorporating same |
JP5869899B2 (ja) * | 2011-04-01 | 2016-02-24 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法、基板処理方法及びサセプタカバー |
KR20120137986A (ko) * | 2011-06-14 | 2012-12-24 | 삼성디스플레이 주식회사 | 정전척 |
US10242890B2 (en) * | 2011-08-08 | 2019-03-26 | Applied Materials, Inc. | Substrate support with heater |
JP5792563B2 (ja) * | 2011-08-31 | 2015-10-14 | 東京エレクトロン株式会社 | プラズマエッチング方法及びプラズマエッチング装置 |
US11085112B2 (en) * | 2011-10-28 | 2021-08-10 | Asm Ip Holding B.V. | Susceptor with ring to limit backside deposition |
JP5665726B2 (ja) * | 2011-12-14 | 2015-02-04 | 株式会社東芝 | エッチング装置およびフォーカスリング |
US9835388B2 (en) * | 2012-01-06 | 2017-12-05 | Novellus Systems, Inc. | Systems for uniform heat transfer including adaptive portions |
US9376752B2 (en) * | 2012-04-06 | 2016-06-28 | Applied Materials, Inc. | Edge ring for a deposition chamber |
EP2850031A1 (en) * | 2012-05-16 | 2015-03-25 | Intelligent Energy, Inc. | Refillable hydrogen generator |
JP6011417B2 (ja) * | 2012-06-15 | 2016-10-19 | 東京エレクトロン株式会社 | 成膜装置、基板処理装置及び成膜方法 |
US9403251B2 (en) * | 2012-10-17 | 2016-08-02 | Applied Materials, Inc. | Minimal contact edge ring for rapid thermal processing |
KR101923050B1 (ko) * | 2012-10-24 | 2018-11-29 | 어플라이드 머티어리얼스, 인코포레이티드 | 급속 열 처리를 위한 최소 접촉 에지 링 |
US9633889B2 (en) * | 2013-03-06 | 2017-04-25 | Applied Materials, Inc. | Substrate support with integrated vacuum and edge purge conduits |
US10068791B2 (en) * | 2013-03-08 | 2018-09-04 | Semiconductor Components Industries, Llc | Wafer susceptor for forming a semiconductor device and method therefor |
US9799548B2 (en) * | 2013-03-15 | 2017-10-24 | Applied Materials, Inc. | Susceptors for enhanced process uniformity and reduced substrate slippage |
JP6119430B2 (ja) * | 2013-05-31 | 2017-04-26 | 住友大阪セメント株式会社 | 静電チャック装置 |
CN105683839B (zh) * | 2013-09-27 | 2017-08-08 | Asml荷兰有限公司 | 用于光刻设备的支撑台、光刻设备以及器件制造方法 |
TWI734668B (zh) * | 2014-06-23 | 2021-08-01 | 美商應用材料股份有限公司 | 在epi腔室中的基材熱控制 |
US9517539B2 (en) * | 2014-08-28 | 2016-12-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer susceptor with improved thermal characteristics |
JP6296299B2 (ja) * | 2014-09-02 | 2018-03-20 | パナソニックIpマネジメント株式会社 | プラズマ処理装置およびプラズマ処理方法 |
US10269614B2 (en) * | 2014-11-12 | 2019-04-23 | Applied Materials, Inc. | Susceptor design to reduce edge thermal peak |
WO2016114877A1 (en) * | 2015-01-12 | 2016-07-21 | Applied Materials, Inc. | Support assembly for substrate backside discoloration control |
WO2016154052A1 (en) * | 2015-03-25 | 2016-09-29 | Applied Materials, Inc. | Chamber components for epitaxial growth apparatus |
US9428833B1 (en) * | 2015-05-29 | 2016-08-30 | Lam Research Corporation | Method and apparatus for backside deposition reduction by control of wafer support to achieve edge seal |
KR102415944B1 (ko) * | 2015-06-23 | 2022-07-04 | 삼성전자주식회사 | 지지 유닛 및 기판 처리 장치 |
US10256131B2 (en) * | 2015-08-27 | 2019-04-09 | Sumitomo Osaka Cement Co., Ltd. | Electrostatic chuck device |
US10121655B2 (en) * | 2015-11-20 | 2018-11-06 | Applied Materials, Inc. | Lateral plasma/radical source |
US20170175265A1 (en) * | 2015-12-18 | 2017-06-22 | Applied Materials, Inc. | Flat susceptor with grooves for minimizing temperature profile across a substrate |
KR102507283B1 (ko) * | 2015-12-22 | 2023-03-07 | 삼성전자주식회사 | 기판 척 및 이를 포함하는 기판 접합 시스템 |
JP6650345B2 (ja) * | 2016-05-26 | 2020-02-19 | 日本特殊陶業株式会社 | 基板保持装置及びその製造方法 |
JP6978840B2 (ja) * | 2017-02-28 | 2021-12-08 | 株式会社Screenホールディングス | 基板処理装置および基板保持装置 |
US11201079B2 (en) * | 2018-05-30 | 2021-12-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer chuck |
-
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KR20220025146A (ko) | 2022-03-03 |
CN112053991A (zh) | 2020-12-08 |
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TWI651793B (zh) | 2019-02-21 |
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CN106463445B (zh) | 2020-09-04 |
US20240112945A1 (en) | 2024-04-04 |
KR20230116078A (ko) | 2023-08-03 |
TW201545258A (zh) | 2015-12-01 |
CN106463445A (zh) | 2017-02-22 |
SG10201810390TA (en) | 2018-12-28 |
US20210175115A1 (en) | 2021-06-10 |
US11848226B2 (en) | 2023-12-19 |
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