SG11201606665YA - Improved thermal processing chamber - Google Patents

Improved thermal processing chamber

Info

Publication number
SG11201606665YA
SG11201606665YA SG11201606665YA SG11201606665YA SG11201606665YA SG 11201606665Y A SG11201606665Y A SG 11201606665YA SG 11201606665Y A SG11201606665Y A SG 11201606665YA SG 11201606665Y A SG11201606665Y A SG 11201606665YA SG 11201606665Y A SG11201606665Y A SG 11201606665YA
Authority
SG
Singapore
Prior art keywords
processing chamber
thermal processing
improved thermal
improved
chamber
Prior art date
Application number
SG11201606665YA
Inventor
Joseph M Ranish
Aaron Muir Hunter
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11201606665YA publication Critical patent/SG11201606665YA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411—Cooling of the reaction chamber walls
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/488—Protection of windows for introduction of radiation into the coating chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
SG11201606665YA 2014-03-19 2015-03-11 Improved thermal processing chamber SG11201606665YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/219,644 US10053777B2 (en) 2014-03-19 2014-03-19 Thermal processing chamber
PCT/US2015/019829 WO2015142578A1 (en) 2014-03-19 2015-03-11 Improved thermal processing chamber

Publications (1)

Publication Number Publication Date
SG11201606665YA true SG11201606665YA (en) 2016-10-28

Family

ID=54141541

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201606665YA SG11201606665YA (en) 2014-03-19 2015-03-11 Improved thermal processing chamber

Country Status (7)

Country Link
US (1) US10053777B2 (en)
JP (1) JP6578297B2 (en)
KR (1) KR102381819B1 (en)
CN (2) CN107557759A (en)
SG (1) SG11201606665YA (en)
TW (1) TWI653357B (en)
WO (1) WO2015142578A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10053777B2 (en) * 2014-03-19 2018-08-21 Applied Materials, Inc. Thermal processing chamber
US10752991B2 (en) * 2017-02-06 2020-08-25 Applied Materials, Inc. Half-angle nozzle
JP6863041B2 (en) * 2017-04-21 2021-04-21 東京エレクトロン株式会社 Substrate heating device
EP3665718B1 (en) * 2017-08-07 2024-04-24 Sharpack Technology Pte. Ltd. Hot wall flux free solder ball treatment arrangement
CN117038498A (en) * 2018-02-23 2023-11-10 应用材料公司 Epitaxial (EPI) thickness adjustment by pulse or profile point heating
CN115547896B (en) * 2022-11-29 2023-03-10 无锡邑文电子科技有限公司 Non-water-cooling semiconductor wafer low-temperature processing equipment

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03220734A (en) * 1990-01-25 1991-09-27 Fujitsu Ltd Vapor phase epitaxial crystal growth device
JPH0613324A (en) * 1992-06-26 1994-01-21 Fujitsu Ltd Vacuum heater
JP3165304B2 (en) * 1992-12-04 2001-05-14 株式会社半導体エネルギー研究所 Semiconductor device manufacturing method and semiconductor processing apparatus
US5650082A (en) * 1993-10-29 1997-07-22 Applied Materials, Inc. Profiled substrate heating
JPH07201753A (en) * 1993-12-29 1995-08-04 Nippon Steel Corp Manufacture of thin film and its device
JPH07283096A (en) * 1994-04-08 1995-10-27 Hitachi Ltd Method and system for processing semiconductor substrate
JP3247270B2 (en) * 1994-08-25 2002-01-15 東京エレクトロン株式会社 Processing apparatus and dry cleaning method
JPH08139046A (en) * 1994-11-09 1996-05-31 Hitachi Ltd Heat treatment equipment
JPH08191097A (en) * 1995-01-11 1996-07-23 Touyoko Kagaku Kk High speed heat treatment equipment
JPH0917217A (en) * 1995-06-28 1997-01-17 Hitachi Ltd Light source device and its adjusting method as well as semiconductor manufacturing device and method
JPH09199501A (en) * 1995-10-02 1997-07-31 Applied Materials Inc Process and apparatus for depositing stable fluorine-doped film by using sif4
JPH09143691A (en) * 1995-11-22 1997-06-03 Tokyo Electron Ltd Film forming and heat treating device
US6153260A (en) * 1997-04-11 2000-11-28 Applied Materials, Inc. Method for heating exhaust gas in a substrate reactor
US6222990B1 (en) * 1997-12-03 2001-04-24 Steag Rtp Systems Heating element for heating the edges of wafers in thermal processing chambers
US6108491A (en) * 1998-10-30 2000-08-22 Applied Materials, Inc. Dual surface reflector
US7015422B2 (en) 2000-12-21 2006-03-21 Mattson Technology, Inc. System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy
JP4374854B2 (en) * 2001-12-25 2009-12-02 東京エレクトロン株式会社 Processing apparatus and cleaning method thereof
US7026009B2 (en) * 2002-03-27 2006-04-11 Applied Materials, Inc. Evaluation of chamber components having textured coatings
US6987240B2 (en) 2002-04-18 2006-01-17 Applied Materials, Inc. Thermal flux processing by scanning
JP2005317925A (en) * 2004-04-02 2005-11-10 Ricoh Co Ltd Light source device, recording device, platemaking device, and image forming apparatus
US20060105114A1 (en) * 2004-11-16 2006-05-18 White John M Multi-layer high quality gate dielectric for low-temperature poly-silicon TFTs
US7976634B2 (en) * 2006-11-21 2011-07-12 Applied Materials, Inc. Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems
US20080257263A1 (en) * 2007-04-23 2008-10-23 Applied Materials, Inc. Cooling shield for substrate processing chamber
JP5916384B2 (en) * 2008-04-16 2016-05-11 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Wafer processing deposit shielding component
US8441640B2 (en) 2008-05-02 2013-05-14 Applied Materials, Inc. Non-contact substrate support position sensing system and corresponding adjustments
JP2010129861A (en) * 2008-11-28 2010-06-10 Tokyo Electron Ltd Thermal processing apparatus
US8150242B2 (en) * 2008-10-31 2012-04-03 Applied Materials, Inc. Use of infrared camera for real-time temperature monitoring and control
US9758871B2 (en) * 2008-12-10 2017-09-12 Sumco Techxiv Corporation Method and apparatus for manufacturing epitaxial silicon wafer
US8372667B2 (en) 2009-04-20 2013-02-12 Applied Materials, Inc. Fiber laser substrate processing
ES1071023Y (en) 2009-05-25 2010-03-04 Veridentia S L DEVICE WITH ELECTROMECHANICAL CLOSURE FOR THE SAFE DISTRIBUTION OF HEMOCOMPONENTS OR PHARMACOS
KR20110044698A (en) 2009-10-23 2011-04-29 주성엔지니어링(주) Substrate processing equipment
US20120052216A1 (en) 2010-08-27 2012-03-01 Applied Materials, Inc. Gas distribution showerhead with high emissivity surface
TW201218301A (en) 2010-10-28 2012-05-01 Applied Materials Inc Apparatus having improved substrate temperature uniformity using direct heating methods
JP6051535B2 (en) * 2011-02-28 2016-12-27 株式会社リコー Image processing method and image processing apparatus
US9347132B2 (en) * 2011-04-29 2016-05-24 Applied Materials, Inc. Optical endpoint detection system
WO2013112313A1 (en) 2012-01-26 2013-08-01 Applied Materials, Inc. Thermal processing chamber with top substrate support assembly
US10734257B2 (en) 2012-04-25 2020-08-04 Applied Materials, Inc. Direct current lamp driver for substrate processing
US9905444B2 (en) * 2012-04-25 2018-02-27 Applied Materials, Inc. Optics for controlling light transmitted through a conical quartz dome
US10202707B2 (en) 2012-04-26 2019-02-12 Applied Materials, Inc. Substrate processing system with lamphead having temperature management
US9029739B2 (en) 2012-05-30 2015-05-12 Applied Materials, Inc. Apparatus and methods for rapid thermal processing
US9842753B2 (en) * 2013-04-26 2017-12-12 Applied Materials, Inc. Absorbing lamphead face
KR102381816B1 (en) * 2014-02-14 2022-04-04 어플라이드 머티어리얼스, 인코포레이티드 Upper dome with injection assembly
US10053777B2 (en) * 2014-03-19 2018-08-21 Applied Materials, Inc. Thermal processing chamber

Also Published As

Publication number Publication date
CN106104750B (en) 2019-12-10
TW201538782A (en) 2015-10-16
JP2017515299A (en) 2017-06-08
US10053777B2 (en) 2018-08-21
WO2015142578A1 (en) 2015-09-24
CN106104750A (en) 2016-11-09
KR20160135778A (en) 2016-11-28
CN107557759A (en) 2018-01-09
KR102381819B1 (en) 2022-04-04
US20150267300A1 (en) 2015-09-24
TWI653357B (en) 2019-03-11
JP6578297B2 (en) 2019-09-18

Similar Documents

Publication Publication Date Title
SG11201608905XA (en) Thermal processing susceptor
SG11201704367QA (en) Processing chamber
IL250159A0 (en) Processing biomass
PL2940242T3 (en) Pressure-blocking feedthru
PL3234071T3 (en) Furnace
SG11201606665YA (en) Improved thermal processing chamber
HK1221760A1 (en) Heater
GB201603883D0 (en) Chamber
SG10201507112YA (en) Furnace
LT3237349T (en) Improved biobinder
GB201512229D0 (en) Temperature sensor arrangement
GB201403515D0 (en) Thermometer
GB2524076B8 (en) Improved Heater
GB201419494D0 (en) Variations
GB201401895D0 (en) Contact Processing
GB201521655D0 (en) Object processing
GB201617081D0 (en) Detection chamber
PL2929780T3 (en) Heat chamber
HK1217095A1 (en) Space chamber
GB2523752B (en) Plenum chamber
GB201415560D0 (en) Thermal Process
GB201513636D0 (en) Temperature amplification unit
GB201508639D0 (en) Temperature amplification unit
GB201419908D0 (en) Temperature amplification unit
HUP1400598A2 (en) Hot chamber die-casting