JPH08191097A - High speed heat treatment equipment - Google Patents

Abstract

PURPOSE: To provide a high speed heat treatment equipment which eliminates the shadow of light irradiation which is caused by a holding jig, improve in- surface temperature uniformity, and can form a film excellent in uniformity. CONSTITUTION: In a high speed heat treatment equipment which heat-treats a treatment substrate in a chamber by using infrared lamps, the following are installed; a substrate holding member 4 which retains a treatment substrate 1, in the lower end portion, directly or via a substrate holder, a rotary shaft 30 formed in the upper end central part of the substrate holding member, infrared lamps 12 arranged on the outer part of a chamber lower end portion, and a means which makes the rotary shaft rotatable.

Description

Detailed Description of the Invention

[0001]

This invention relates to a semiconductor or LC
In the production of D, the apparatus for performing heat treatment using an infrared lamp is described in detail. The infrared lamp of the heating source is arranged only in the lower part, and the processed substrate to be heated is supported and rotated from the upper part. As a result, the shadow of light irradiation by the holding jig is eliminated, the in-plane temperature uniformity is remarkably improved, and a rapid thermal processing apparatus capable of forming a film with excellent uniformity, particularly thermal CV.
D device.

[0002]

2. Description of the Related Art Conventionally, as shown in FIG. 11, in a heat treatment apparatus using lamp heating of this type, a substrate 1 in a quartz processing chamber 11 is supported by a rotatable support tool 26 directly or via a susceptor. Then, the substrate 1 is heated through the processing chamber-11 from the infrared lamp 12 arranged above the quartz processing chamber 11 or the infrared lamps 12 and 12 'arranged above and below, and the gas is caused to flow into the quartz processing chamber-11. The substrate 1 was configured to be vapor-grown. Therefore, in the above-mentioned conventional apparatus, the mechanism portion 45 for rotating and transferring the substrate 1 is arranged on the lower side of the substrate 1 and is horizontally connected to the upper end of the support tool 26 and the tip is bent upward. The substrate 1 was supported by the three rod-shaped jigs 27 thus prepared.

However, in the above-mentioned conventional film forming method of radiative heating from above the substrate 1, depending on the state of the substrate surface,
If there is a portion where the emissivity is locally different, the temperature distribution deteriorates, and as a result, the film formation distribution deteriorates, or the difference in the light absorptivity occurs due to the difference in the film thickness of the substrate base, There is a problem that the film formation rate changes and the film formation distribution deteriorates. In addition, the film-forming method of heating from above and below the substrate 1 not only has the problem of heating from above, but the jig 27 that holds the substrate 1 or the susceptor becomes a shadow of light, which results in local There is a problem in that the temperature unevenness occurs and the film formation distribution deteriorates similarly. Since the jig 27 rotates together with the substrate 1, the surface of the substrate 1 facing the jig 27 is always a shadow. Not only that, in the above-mentioned conventional method, the temperature of the front surface, the back surface of the substrate or the susceptor itself was measured using a radiation thermometer. Since the emissivity of the surface changes slightly,
There was a problem that accurate temperature could not be measured. Further, the above conventional method has a problem that the substrate 1 cannot be transferred automatically when the susceptor is used.

[0004]

SUMMARY OF THE INVENTION The present invention is intended to solve the above-mentioned conventional problems and eliminates the shadow of light irradiation by a holding jig, and improves the in-plane temperature uniformity remarkably. Therefore, it is an object of the present invention to provide a rapid thermal processing apparatus capable of forming a film with excellent uniformity. Another object of the present invention is to provide a rapid thermal processing system capable of accurately measuring the temperature of the susceptor itself. Furthermore, this invention is
It is an object of the present invention to provide a rapid thermal processing apparatus that can automatically take a substrate in and out of a processing chamber.

[0005]

The structure of the present invention which meets the above-mentioned object is a high-speed heat treatment apparatus for heat-treating a processing substrate with an infrared lamp in a chamber. A substrate holder that is supported through the rotating shaft, a rotating shaft provided at the center of the upper end of the substrate holder, an infrared lamp disposed outside the lower end of the chamber, and a means for rotating the rotating shaft. It is characterized by having. In short, the present invention rotates the processing substrate and heats it only from the lower side of the substrate with the infrared lamp, thereby eliminating the shadow of local light irradiation by the holding jig,
The gist of the present invention is to eliminate the deterioration of the film thickness distribution due to the occurrence of portions having different emissivities on the substrate surface.

Further, according to the present invention, a thermocouple for temperature detection is provided in the substrate holder, and a temperature measuring portion of the thermocouple for temperature detection is provided in a substrate holder such as a susceptor. It is characterized in that the accurate temperature of the susceptor can be measured by measuring the temperature. Further, according to the present invention, a jig having a push-up pin for inserting a through hole formed in a susceptor or an opening in the center of a ring-shaped support member to lift the processing substrate upward is provided in the chamber, The substrate is automatically lifted up and down so that the substrate can be automatically taken in and out of the processing chamber.

[0007]

Embodiments of the present invention will now be described with reference to the drawings. FIG. 1 is a sectional view showing an embodiment of the present invention, in which the substrate 1 is configured to rotate during processing. A substrate 1 to be processed is placed on a susceptor-2 in a chamber formed by an upper chamber 15 and a lower quartz chamber-11. The susceptor-2 is supported by a substrate holder 4 having a rotating shaft 30 at the center of the upper end. It is supported. The substrate holder 4 is
As shown in FIG. 1 and FIG.
The rods are connected, the tip of the rod is bent vertically, the tip of the bent portion is bent horizontally inward, and the susceptor-2 can be supported on the horizontal bent portion. There is. The substrate holder 4 may have any structure as long as it can rotatably hold the substrate 1 directly or via a substrate holder such as a susceptor. Three through holes 31 are formed at equal intervals in a portion of the susceptor-2 which is in contact with the outer peripheral portion of the substrate 1.

A substrate push-up tool 33 is locked on the inner wall flange portion 32 of the upper chamber 15. The upper end locking portion of the substrate pushing-up tool 33 is formed in a ring shape, and three rods are continuously provided downward from the ring-shaped locking portion, and the rod tip end portion is bent inwardly horizontally. The push-up pin 3 which is bent vertically upward is continuously provided at the tip of the bent portion. The push-up pin 3 faces the through hole 31 formed in the susceptor-2. As shown in FIG. 2, by lowering the substrate holder 4, the push-up pins 3 pass through the through holes 31 and lift the substrate 1. The substrate 1 which has been lifted in this manner is connected to the gate valve 9
Is opened, the chuck is inserted through the gate opening 47, and the chuck is automatically carried out of the chamber. The loading of the substrate 1 into the chamber can be automatically performed in the same manner by the reverse operation to the above.

Although the substrate holder 4 is moved up and down in the above embodiment, the push-up pin 3 may be moved up and down. As described above, even when the substrate pushing-up tool 33 is installed in the chamber, the susceptor-2 is rotated during the processing, so that the susceptor-2 is not locally shaded by light irradiation. Upper end flange portion 34 of the rotating shaft 30 of the substrate holder 4
Is fitted and held by a holding member 46 fixed to the lower end of the rotating shaft 35 which is rotated by the motor 8 via the magnetic fluid seal 6. The lower surface of the holding member 46 is formed in a recess, and the flange portion 34 is fitted in the recess and is locked and fixed to a locking piece 36 bent inward at the lower end of the recess. A vacuum bellows 5 is externally fitted to the lower end of the rotary shaft 35 in the processing chamber. Therefore, the rotary shaft 35 can be moved up and down while maintaining the vacuum state.

The upper end of the rotary shaft 35 is connected to a piston 38 of the air cylinder 7 via a connecting member 37. Therefore, according to the vertical movement of the piston 38, the rotating shaft 3
5 moves up and down. The means for moving the rotary shaft 35 up and down may be other means as long as it is linear drive. Below the outside of the quartz chamber 11, an infrared lamp 12 having a reflecting plate 39 on the back is fixed to the lamp module 20. Lamp module
A large number of air exhaust ports 16 are formed in a ring shape on the outer periphery of the ring 20. Room temperature air is supplied by the lamp module 20.
It is introduced through the central opening 40 of the quartz chamber 1 at high speed.
1 between the infrared lamp 12 and the quartz chamber 1
1 is cooled so as not to reach a high temperature and is discharged from the exhaust port 16.

In the above embodiment, the apparatus is constructed so as to be vacuum-tight, but this is not necessarily the case, and it may be constructed and used for normal pressure. In addition, in the above embodiment, the reaction gas is as shown in FIG.
As shown in, the gas is introduced through the gas introduction port 10 and exhausted through the decompression exhaust port 48. This is not necessary, as the present invention can also be applied to heat treatments that do not use reactive gases. In FIG. 1, 19 is a water cooling line, which circulates water during operation to constantly cool the inner wall of the chamber. In FIG. 3, the upper chamber 15 and the rotation driving unit are connected to the guide rod 4.
1 shows the state of being raised while guiding.
In this state, maintenance work such as adjustment of the mechanical section is performed. In order to prevent misalignment for each maintenance work, a positioning pin 17 is erected on the upper chamber fixing member 42, and a positioning through hole that fits into the positioning pin 17 is provided on the flange portion of the upper chamber 15. 18 is formed.

FIG. 4 is a sectional view when a substrate support ring 21 is used instead of the susceptor-2. The push-up method for pushing up the substrate 1 is that the push-up pin 3
The operation can be performed in the same manner as in the above-mentioned embodiment except that it is moved up and down along the edge of the central opening of 1. FIG. 5 shows a substrate holder
FIG. 6 is a cross-sectional view showing a state in which only the processing substrate 1 is directly radiantly heated without using the above. In this case, if the protrusion 43 is formed on the portion of the substrate holder 4 that supports the substrate 1, the substrate push-up tool 33 does not need to be used. FIG. 6 is a sectional view showing an embodiment in the case of using a gas injector. The pipe portion 44 of the gas injector is fitted into the rotary shaft 30 of the substrate holder 4 and the rotary shaft 35 connected to the rotary shaft 30, and the hollow disc-shaped gas dispersion head 22 at the lower end of the pipe portion 44 is fitted. A large number of through holes for ejecting gas are formed on the lower surface of the.

As shown by the arrow in FIG. 6, a gas dispenser
The reaction gas introduced into the chamber through the ionization head 22 passes over the substrate 1 and flows downward as shown by an arrow, and is discharged from a gas exhaust port 23 provided in the radiation thermometer holder-24. To be done. FIG. 8 is an enlarged cross-sectional view of the portion shown in FIG. 1A, in which the substrate holder-4 is formed hollow, the thermocouple 25 is internally provided in the hollow portion, and the tip temperature measuring portion of the thermocouple 25 is formed on the susceptor-2. An example of inserting the hole from below is shown. By doing so, the temperature inside the susceptor is measured directly instead of the outer peripheral surface as in the conventional case, and therefore the film formed by the reaction gas is not affected, so that the susceptor can be accurately measured. The temperature can be measured.

Further, as shown in FIG. 1, the detection wavelength is 4 μm.
By using the radiation thermometer 14 described above, the temperature is measured through the window member 13 that transmits light having a wavelength of 4 μm or more, and the measured value is compared with the measured value of the internal temperature of the susceptor, and the calculation correction is performed. Even if the thermocouple 25 does not operate accurately, accurate temperature measurement can be performed. As shown in FIG. 9, the tip temperature measuring portion of the thermocouple 25 may of course be inserted laterally into the hole formed in the susceptor 2. Further, as shown in FIG. 10, the thermocouple 25 may be buried deep in the susceptor-2. By doing so, the temperature of the susceptor can be detected more accurately.

[0015]

According to the present invention, since heating is performed only from below the substrate, it is possible to prevent a portion of the substrate surface having a different emissivity and a change in the film formation rate due to a difference in the film thickness of the substrate underlayer. be able to. Not only that, since the side part of the substrate or the substrate holder is held and the substrate is rotated during the substrate processing, a local light shadow due to a jig or the like does not occur on the substrate or the substrate holder. Since the temperature unevenness does not occur, the in-plane temperature uniformity can be remarkably improved. Further, by incorporating the temperature detecting thermocouple in the substrate holder, and by incorporating the temperature measuring unit of the temperature detecting thermocouple in the substrate holder, an error in the measured temperature due to the formation of the coating film by the reaction gas does not occur. The exact temperature of the susceptor can be measured. Furthermore, if the substrate can be moved up and down by the push-up pin, the chuck can be inserted, so that the substrate can be automatically loaded or unloaded.

[0016]

[Effect] As described above, according to the present invention, while the processing substrate is being rotated, the heat treatment is performed by the infrared lamp arranged in the lower portion outside the chamber, so that the film formation rate can be prevented from changing depending on the state of the base of the processing substrate. Since the influence of the pattern on the surface can be prevented, the occurrence of temperature unevenness on the substrate can be prevented, so that the processed substrate having the excellent in-plane temperature uniformity can be obtained.

[0017]

[Brief description of drawings]

FIG. 1 is a vertical sectional view showing an embodiment of the present invention.

FIG. 2 is a vertical cross-sectional view showing a state in which a substrate is raised by push-up pins.

FIG. 3 is a vertical sectional view showing a state in which an upper chamber is raised.

FIG. 4 is a vertical sectional view showing another embodiment of the present invention.

FIG. 5 is a vertical sectional view showing another embodiment of the present invention.

FIG. 6 is a vertical sectional view showing another embodiment of the present invention.

7 is a sectional view taken along line BB ′ of FIG.

FIG. 8 is an enlarged cross-sectional view of a portion A of FIG.

9 is an enlarged cross-sectional view showing another example of the portion A of FIG.

FIG. 10 is an enlarged cross-sectional view showing another example of portion A of FIG.

FIG. 11 is a vertical sectional view showing a conventional rapid thermal processing apparatus.

[Explanation of symbols]

 1 substrate to be processed 2 susceptor 4 substrate holder 6,6 'magnetic fluid seal 12 infrared lamp 15 upper chamber 25 thermocouple 33 substrate push-up tool 35 rotating shaft

Claims (9)

[Claims] 1. A high-speed heat treatment apparatus for heat-treating a processed substrate with an infrared lamp in a chamber, and a substrate holder for supporting the processed substrate at a lower end directly or via a substrate holder, and a substrate holder of the substrate holder. A high-speed heat treatment apparatus comprising: a rotating shaft provided at a central portion of an upper end, an infrared lamp arranged outside the lower end portion of the chamber, and a means for rotating the rotating shaft. 2. The rapid thermal processing apparatus according to claim 1, further comprising means for vertically moving the rotary shaft. 3. The rapid thermal processing apparatus according to claim 1, wherein the substrate holder is a susceptor or a ring-shaped support. 4. The rapid thermal processing apparatus according to claim 2, wherein the means for freely moving the rotating shaft vertically moves by expanding and contracting a vacuum bellows. 5. A thermocouple for temperature detection is incorporated in the substrate holder, and a temperature measuring portion of the thermocouple for temperature detection is provided in the substrate holder.
The rapid thermal processing apparatus according to claim 3, wherein the interior is fixed to the interior. 6. A jig provided with a push-up pin for inserting the through-hole formed in the susceptor or the central opening of the ring-shaped support to lift the processing substrate upward is provided in the chamber. The rapid thermal processing apparatus according to claim 3, wherein 7. A gas dispersion head, comprising: a pipe portion penetrating the rotary shaft and a means for allowing the rotary shaft to freely rotate; and a gas dispersion head continuous with a lower end of the pipe part. The rapid thermal processing apparatus according to claim 1, wherein a gas injector having a large number of through holes for ejecting gas onto the processing substrate is provided at the lower end of the head. 8. A magnetic fluid sheet for holding the rotating shaft so that the rotating shaft does not rotate on the rotating shaft of the means for making the rotating shaft rotatable.
The rapid thermal processing apparatus according to claim 7, wherein the high speed heat treatment apparatus is attached. 9. The rapid thermal processing according to claim 8, wherein a magnetic fluid seal is attached above the pipe portion of the gas injector to keep the pipe portion from rotating even if the rotating shaft rotates. apparatus.