SG10201506427XA - Etching solution for copper or copper alloy - Google Patents

Etching solution for copper or copper alloy

Info

Publication number
SG10201506427XA
SG10201506427XA SG10201506427XA SG10201506427XA SG10201506427XA SG 10201506427X A SG10201506427X A SG 10201506427XA SG 10201506427X A SG10201506427X A SG 10201506427XA SG 10201506427X A SG10201506427X A SG 10201506427XA SG 10201506427X A SG10201506427X A SG 10201506427XA
Authority
SG
Singapore
Prior art keywords
copper
etching solution
alloy
copper alloy
etching
Prior art date
Application number
SG10201506427XA
Other languages
English (en)
Inventor
Yutaka Yoshida
Yukichi Koji
Original Assignee
Entegris Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Entegris Inc filed Critical Entegris Inc
Publication of SG10201506427XA publication Critical patent/SG10201506427XA/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Families Citing this family (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6101421B2 (ja) 2010-08-16 2017-03-22 インテグリス・インコーポレーテッド 銅または銅合金用エッチング液
US9238850B2 (en) 2010-08-20 2016-01-19 Advanced Technology Materials, Inc. Sustainable process for reclaiming precious metals and base metals from e-waste
KR101687342B1 (ko) * 2010-10-07 2016-12-19 엘에스전선 주식회사 동판 및 동선재용 도금액 조성물
KR102064487B1 (ko) 2011-01-13 2020-01-10 엔테그리스, 아이엔씨. 세륨-함유 용액에 의해 발생된 입자의 제거를 위한 배합물
JP5933950B2 (ja) 2011-09-30 2016-06-15 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 銅または銅合金用エッチング液
CN104508072A (zh) 2012-02-15 2015-04-08 安格斯公司 用于cmp后去除的组合物及使用方法
EP2850495A4 (en) 2012-05-18 2016-01-20 Entegris Inc COMPOSITION AND METHOD FOR REMOVING PHOTOLACK FROM A SURFACE WITH TITANNITRIDE
US9765288B2 (en) 2012-12-05 2017-09-19 Entegris, Inc. Compositions for cleaning III-V semiconductor materials and methods of using same
KR102294726B1 (ko) 2013-03-04 2021-08-30 엔테그리스, 아이엔씨. 티타늄 나이트라이드를 선택적으로 에칭하기 위한 조성물 및 방법
JP6198672B2 (ja) * 2013-05-02 2017-09-20 富士フイルム株式会社 エッチング方法、これに用いるエッチング液およびエッチング液のキット、ならびに半導体基板製品の製造方法
JP6110814B2 (ja) * 2013-06-04 2017-04-05 富士フイルム株式会社 エッチング液およびそのキット、これらを用いたエッチング方法、半導体基板製品の製造方法および半導体素子の製造方法
EP3004287B1 (en) 2013-06-06 2021-08-18 Entegris, Inc. Compositions and methods for selectively etching titanium nitride
WO2015002272A1 (ja) * 2013-07-05 2015-01-08 和光純薬工業株式会社 エッチング剤、エッチング方法およびエッチング剤調製液
TWI683889B (zh) 2013-07-31 2020-02-01 美商恩特葛瑞斯股份有限公司 用於移除金屬硬遮罩及蝕刻後殘餘物之具有Ｃｕ／Ｗ相容性的水性配方
SG11201601158VA (en) 2013-08-30 2016-03-30 Advanced Tech Materials Compositions and methods for selectively etching titanium nitride
CN103474393B (zh) * 2013-09-11 2015-07-08 华进半导体封装先导技术研发中心有限公司 免cmp的电镀面铜去除及阻挡层复用的工艺方法
CN103456685B (zh) * 2013-09-13 2015-03-18 华进半导体封装先导技术研发中心有限公司 一种不需使用cmp的tsv与第一层再布线层的制造方法
US9291910B2 (en) * 2013-09-27 2016-03-22 Dynaloy, Llc Aqueous solution and process for removing substances from substrates
TWI654340B (zh) 2013-12-16 2019-03-21 美商恩特葛瑞斯股份有限公司 Ｎｉ：ＮｉＧｅ：Ｇｅ選擇性蝕刻配方及其使用方法
WO2015095726A1 (en) 2013-12-20 2015-06-25 Entegris, Inc. Use of non-oxidizing strong acids for the removal of ion-implanted resist
KR102290209B1 (ko) 2013-12-31 2021-08-20 엔테그리스, 아이엔씨. 규소 및 게르마늄을 선택적으로 에칭하기 위한 배합물
WO2015116818A1 (en) 2014-01-29 2015-08-06 Advanced Technology Materials, Inc. Post chemical mechanical polishing formulations and method of use
WO2015119925A1 (en) 2014-02-05 2015-08-13 Advanced Technology Materials, Inc. Non-amine post-cmp compositions and method of use
US9287228B2 (en) * 2014-06-26 2016-03-15 Lam Research Ag Method for etching semiconductor structures and etching composition for use in such a method
KR102209423B1 (ko) * 2014-06-27 2021-01-29 동우 화인켐 주식회사 금속막의 식각액 조성물 및 이를 이용한 액정표시장치용 어레이 기판의 제조방법
KR102204209B1 (ko) * 2014-06-27 2021-01-18 동우 화인켐 주식회사 금속막의 식각액 조성물 및 이를 이용한 액정표시장치용 어레이 기판의 제조방법
KR20160001985A (ko) * 2014-06-30 2016-01-07 동우 화인켐 주식회사 금속막의 식각액 조성물 및 이를 이용한 액정 표시 장치용 어레이 기판의 제조방법
CN104118871B (zh) * 2014-07-31 2017-02-15 无锡格菲电子薄膜科技有限公司 一种石墨烯生长衬底的复合刻蚀液及其刻蚀方法
WO2017033915A1 (ja) * 2015-08-26 2017-03-02 株式会社Adeka エッチング液組成物及びエッチング方法
US10920143B2 (en) * 2015-08-26 2021-02-16 Adeka Corporation Etching liquid composition and etching method
WO2017086758A1 (ko) * 2015-11-19 2017-05-26 오씨아이 주식회사 구리 식각용 조성물 및 과산화수소계 금속 식각용 조성물
CN105624685A (zh) * 2015-12-31 2016-06-01 芜湖市金宇石化设备有限公司 一种汽车铝制踏板防腐蚀处理用防腐基础液的制备方法
CN105463438A (zh) * 2015-12-31 2016-04-06 芜湖市金宇石化设备有限公司 一种汽车铝制踏板防腐蚀处理方法
CN105568275A (zh) * 2015-12-31 2016-05-11 芜湖市金宇石化设备有限公司 一种汽车铝制踏板防腐蚀处理用防腐基础液
KR102583609B1 (ko) * 2016-03-28 2023-10-06 동우 화인켐 주식회사 구리계 금속막용 식각액 조성물, 이를 이용한 표시장치용 어레이 기판의 제조방법
CN105848421A (zh) * 2016-04-18 2016-08-10 王靖 一种用于半加成法制备精细线路的差分蚀刻溶液
JP6818017B2 (ja) * 2016-04-27 2021-01-20 三洋化成工業株式会社 エッチング液及び電子基板の製造方法
KR102340997B1 (ko) * 2016-10-21 2021-12-21 가부시키가이샤 아데카 에칭액 조성물 및 에칭 방법
CN108018556A (zh) * 2016-10-31 2018-05-11 易案爱富科技有限公司 蚀刻组合物
CN106757033B (zh) * 2017-03-28 2019-01-04 江苏和达电子科技有限公司 一种铜或铜合金的选择性蚀刻液
KR102368365B1 (ko) * 2017-03-28 2022-02-28 동우 화인켐 주식회사 구리계 금속막용 식각액 조성물, 이를 이용한 박막 트랜지스터 어레이 기판의 제조방법, 및 박막 트랜지스터 어레이 기판
JP2018184624A (ja) * 2017-04-24 2018-11-22 三洋化成工業株式会社 銅又は銅合金用エッチング液
JP6736088B2 (ja) * 2017-05-22 2020-08-05 メック株式会社 エッチング液、補給液および銅配線の形成方法
CN107287594A (zh) * 2017-06-01 2017-10-24 东莞市达诚显示材料有限公司 一种铜镍多层薄膜用蚀刻液
KR102048495B1 (ko) * 2018-03-27 2019-11-25 김용석 Msap 기판 제조용 에칭액
CN109112541A (zh) * 2018-10-29 2019-01-01 深圳市中南环保科技控股有限公司 环保型高效双液型酸性蚀刻液
JP6913142B2 (ja) * 2018-11-12 2021-08-04 三洋化成工業株式会社 銅又は銅合金用エッチング液及び電子基板の製造方法
TWI831869B (zh) * 2018-11-20 2024-02-11 日商三菱瓦斯化學股份有限公司 用以選擇性蝕刻銅及銅合金之蝕刻液及使用此蝕刻液之半導體基板之製造方法
CN109536962B (zh) * 2018-11-20 2023-06-16 无锡格菲电子薄膜科技有限公司 一种cvd石墨烯生长衬底铜箔酸性刻蚀液
JP7233217B2 (ja) * 2018-12-28 2023-03-06 関東化学株式会社 酸化亜鉛および銀を有する積層膜の一括エッチング液組成物
CN110079803B (zh) * 2019-04-24 2020-11-24 深圳市华星光电技术有限公司 刻蚀液、刻蚀组合液以及刻蚀方法
US10947473B2 (en) * 2019-05-17 2021-03-16 Vanderbilt Chemicals, Llc Less corrosive organic compounds as lubricant additives
CN110644001A (zh) * 2019-10-22 2020-01-03 湖北兴福电子材料有限公司 一种铜蚀刻液
CN110819991B (zh) * 2019-11-08 2022-07-15 日月光半导体(上海)有限公司 蚀刻液及使用其的封装基板的制造方法
CN110923713B (zh) * 2019-12-31 2020-12-08 成都中电熊猫显示科技有限公司 一种用于铜钼及合金膜的刻蚀液及其制备方法
CN111519190B (zh) * 2020-05-27 2022-03-18 湖北兴福电子材料有限公司 一种铜制程面板中稳定蚀刻锥角的蚀刻液及稳定方法
CN111979546A (zh) * 2020-08-19 2020-11-24 江苏科林泰电子有限公司 一种有效的金属镁、银的剥离清洗剂
CN112030165B (zh) * 2020-08-28 2022-05-20 武汉迪赛新材料有限公司 Tft-lcd制程用铜钼合层蚀刻液
CN112080747B (zh) * 2020-09-02 2021-10-08 Tcl华星光电技术有限公司 蚀刻钼/铜/钼或钼合金/铜/钼合金三层金属配线结构的蚀刻液组合物及其应用
CN112362437B (zh) * 2020-10-30 2023-12-19 万华化学集团股份有限公司 一种金相侵蚀剂以及金相组织显示方法
CN113445052A (zh) * 2021-07-28 2021-09-28 南通群安电子材料有限公司 适用于msap制程的差异性蚀刻药水
CN113718256B (zh) * 2021-08-06 2022-11-11 浙江奥首材料科技有限公司 一种铜蚀刻液及其在晶圆级封装中的应用
CN114774004B (zh) * 2022-04-07 2023-10-10 湖州飞鹿新能源科技有限公司 一种硅片抛光添加剂、抛光液及其制备方法和应用
CN115058715B (zh) * 2022-07-19 2023-12-22 上海天承化学有限公司 一种用于压延铜箔表面的微蚀液及其制备方法和应用
CN115418642B (zh) * 2022-08-23 2023-06-02 湖北兴福电子材料股份有限公司 一种铜钼蚀刻液及其制备方法
CN116103655A (zh) * 2022-12-25 2023-05-12 江苏中德电子材料科技有限公司 一种集成电路用金属碱性蚀刻液及其制备方法
CN116497355B (zh) * 2023-04-10 2024-03-22 珠海市裕洲环保科技有限公司 一种酸性铜蚀刻液及其应用
CN117305841B (zh) * 2023-11-29 2024-02-02 深圳市板明科技股份有限公司 用于印制线路板的闪蚀药水及其闪蚀方法

Family Cites Families (94)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5418228B2 (zh) * 1973-03-02 1979-07-05
US4378270A (en) * 1981-10-29 1983-03-29 Learonal, Inc. Method of etching circuit boards and recovering copper from the spent etch solutions
US4375384A (en) * 1982-03-08 1983-03-01 Rockwell International Corporation Method for penetrant inspection employing an etchant penetrant
JPS5920471A (ja) * 1982-07-23 1984-02-02 Electroplating Eng Of Japan Co 剥離剤
US4401509A (en) * 1982-09-07 1983-08-30 Fmc Corporation Composition and process for printed circuit etching using a sulfuric acid solution containing hydrogen peroxide
TW263531B (zh) * 1992-03-11 1995-11-21 Mitsubishi Gas Chemical Co
US5320709A (en) 1993-02-24 1994-06-14 Advanced Chemical Systems International Incorporated Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution
JP3481379B2 (ja) 1995-08-23 2003-12-22 メック株式会社 電気めっき法
US7534752B2 (en) 1996-07-03 2009-05-19 Advanced Technology Materials, Inc. Post plasma ashing wafer cleaning formulation
US6244785B1 (en) 1996-11-12 2001-06-12 H. B. Zachry Company Precast, modular spar system
JPH10158869A (ja) * 1996-11-27 1998-06-16 Nippon Hyomen Kagaku Kk 鉄−ニッケル系合金又は鉄−ニッケル−コバルト系合金の化学研磨液および化学研磨方法
US6896826B2 (en) 1997-01-09 2005-05-24 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
US6755989B2 (en) 1997-01-09 2004-06-29 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
US5993685A (en) 1997-04-02 1999-11-30 Advanced Technology Materials Planarization composition for removing metal films
AU7147798A (en) 1997-04-23 1998-11-13 Advanced Chemical Systems International, Inc. Planarization compositions for cmp of interlayer dielectrics
JPH116083A (ja) * 1997-06-13 1999-01-12 Hitachi Ltd 銅または銅合金用溶解液、その製造方法、銅または銅合金のエッチング方法、化学研磨方法および形成方法、ならびに、プリント配線基板の製造方法
US6346741B1 (en) 1997-11-20 2002-02-12 Advanced Technology Materials, Inc. Compositions and structures for chemical mechanical polishing of FeRAM capacitors and method of fabricating FeRAM capacitors using same
US6280651B1 (en) 1998-12-16 2001-08-28 Advanced Technology Materials, Inc. Selective silicon oxide etchant formulation including fluoride salt, chelating agent, and glycol solvent
US6284309B1 (en) * 1997-12-19 2001-09-04 Atotech Deutschland Gmbh Method of producing copper surfaces for improved bonding, compositions used therein and articles made therefrom
US6211126B1 (en) 1997-12-23 2001-04-03 Advanced Technology Materials, Inc. Formulations including a 1, 3-dicarbonyl compound chelating agent for stripping residues from semiconductor substrates
US6306807B1 (en) 1998-05-18 2001-10-23 Advanced Technology Materials, Inc. Boric acid containing compositions for stripping residues from semiconductor substrates
US6875733B1 (en) 1998-10-14 2005-04-05 Advanced Technology Materials, Inc. Ammonium borate containing compositions for stripping residues from semiconductor substrates
TW467953B (en) * 1998-11-12 2001-12-11 Mitsubishi Gas Chemical Co New detergent and cleaning method of using it
US6395194B1 (en) 1998-12-18 2002-05-28 Intersurface Dynamics Inc. Chemical mechanical polishing compositions, and process for the CMP removal of iridium thin using same
US6086779A (en) * 1999-03-01 2000-07-11 Mcgean-Rohco, Inc. Copper etching compositions and method for etching copper
JP2000286531A (ja) 1999-03-31 2000-10-13 Matsushita Electric Works Ltd プリント配線板の製造方法
US6630433B2 (en) * 1999-07-19 2003-10-07 Honeywell International Inc. Composition for chemical mechanical planarization of copper, tantalum and tantalum nitride
US20010054706A1 (en) 1999-07-19 2001-12-27 Joseph A. Levert Compositions and processes for spin etch planarization
CA2378790A1 (en) 1999-08-13 2001-02-22 Cabot Microelectronics Corporation Polishing system and method of its use
US6344432B1 (en) 1999-08-20 2002-02-05 Advanced Technology Materials, Inc. Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures
JP4063475B2 (ja) * 1999-11-10 2008-03-19 メック株式会社 銅または銅合金のエッチング剤
US6599370B2 (en) 2000-10-16 2003-07-29 Mallinckrodt Inc. Stabilized alkaline compositions for cleaning microelectronic substrates
KR100396695B1 (ko) * 2000-11-01 2003-09-02 엘지.필립스 엘시디 주식회사 에천트 및 이를 이용한 전자기기용 기판의 제조방법
US6566315B2 (en) 2000-12-08 2003-05-20 Advanced Technology Materials, Inc. Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures
US7029373B2 (en) 2001-08-14 2006-04-18 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for metal and associated materials and method of using same
US6692546B2 (en) 2001-08-14 2004-02-17 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for metal and associated materials and method of using same
US6800218B2 (en) 2001-08-23 2004-10-05 Advanced Technology Materials, Inc. Abrasive free formulations for chemical mechanical polishing of copper and associated materials and method of using same
US6802983B2 (en) 2001-09-17 2004-10-12 Advanced Technology Materials, Inc. Preparation of high performance silica slurry using a centrifuge
TWI276682B (en) * 2001-11-16 2007-03-21 Mitsubishi Chem Corp Substrate surface cleaning liquid mediums and cleaning method
US6773873B2 (en) 2002-03-25 2004-08-10 Advanced Technology Materials, Inc. pH buffered compositions useful for cleaning residue from semiconductor substrates
US6936543B2 (en) * 2002-06-07 2005-08-30 Cabot Microelectronics Corporation CMP method utilizing amphiphilic nonionic surfactants
US6974777B2 (en) * 2002-06-07 2005-12-13 Cabot Microelectronics Corporation CMP compositions for low-k dielectric materials
JP2004043895A (ja) 2002-07-12 2004-02-12 Mitsubishi Chemicals Corp 銅エッチング液
US6849200B2 (en) 2002-07-23 2005-02-01 Advanced Technology Materials, Inc. Composition and process for wet stripping removal of sacrificial anti-reflective material
US7300601B2 (en) 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
US8236485B2 (en) 2002-12-20 2012-08-07 Advanced Technology Materials, Inc. Photoresist removal
JP4018559B2 (ja) 2003-02-27 2007-12-05 メック株式会社 電子基板の製造方法
US7736405B2 (en) 2003-05-12 2010-06-15 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for copper and associated materials and method of using same
WO2004101222A2 (en) 2003-05-12 2004-11-25 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for step-ii copper liner and other associated materials and method of using same
JP2005105410A (ja) * 2003-09-08 2005-04-21 Mitsubishi Chemicals Corp 銅エッチング液及びエッチング方法
US7335239B2 (en) 2003-11-17 2008-02-26 Advanced Technology Materials, Inc. Chemical mechanical planarization pad
US7888301B2 (en) 2003-12-02 2011-02-15 Advanced Technology Materials, Inc. Resist, barc and gap fill material stripping chemical and method
US7465408B1 (en) * 2003-12-03 2008-12-16 Advanced Micro Devices, Inc. Solutions for controlled, selective etching of copper
US7255810B2 (en) * 2004-01-09 2007-08-14 Cabot Microelectronics Corporation Polishing system comprising a highly branched polymer
US7390744B2 (en) * 2004-01-29 2008-06-24 Applied Materials, Inc. Method and composition for polishing a substrate
US8338087B2 (en) 2004-03-03 2012-12-25 Advanced Technology Materials, Inc Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate
US20060154186A1 (en) 2005-01-07 2006-07-13 Advanced Technology Materials, Inc. Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings
WO2006103751A1 (ja) * 2005-03-29 2006-10-05 Mitsubishi Chemical Corporation 銅エッチング液及びエッチング方法
US20070251551A1 (en) 2005-04-15 2007-11-01 Korzenski Michael B Removal of high-dose ion-implanted photoresist using self-assembled monolayers in solvent systems
KR101332302B1 (ko) 2005-06-06 2013-11-25 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 단일 플래튼 처리를 위한 방법 및 일체형 화학적 기계적연마 조성물
CN102981377B (zh) 2005-06-07 2014-11-12 高级技术材料公司 金属和电介质相容的牺牲性抗反射涂层清洗及去除组合物
CN101233601A (zh) 2005-06-13 2008-07-30 高级技术材料公司 在金属硅化物形成后用于选择性除去金属或金属合金的组合物及方法
TW200714696A (en) 2005-08-05 2007-04-16 Advanced Tech Materials High throughput chemical mechanical polishing composition for metal film planarization
US20090032766A1 (en) 2005-10-05 2009-02-05 Advanced Technology Materials, Inc. Composition and method for selectively etching gate spacer oxide material
EP1932174A4 (en) 2005-10-05 2009-09-23 Advanced Tech Materials AQUEOUS OXIDIZING CLEANER FOR REMOVING RESIDUES AFTER A PLASMA ATTACK
WO2007047365A2 (en) 2005-10-13 2007-04-26 Advanced Technology Materials, Inc. Metals compatible photoresist and/or sacrificial antireflective coating removal composition
AU2006340825A1 (en) 2005-11-09 2007-10-04 Advanced Technology Materials, Inc. Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon
TW200734448A (en) 2006-02-03 2007-09-16 Advanced Tech Materials Low pH post-CMP residue removal composition and method of use
KR100816651B1 (ko) * 2006-03-31 2008-03-27 테크노세미켐 주식회사 제올라이트를 함유하는 구리 화학 기계적 연마 조성물
TW200745313A (en) * 2006-05-26 2007-12-16 Wako Pure Chem Ind Ltd Substrate etching liquid
WO2008039730A1 (en) 2006-09-25 2008-04-03 Advanced Technology Materials, Inc. Compositions and methods for the removal of photoresist for a wafer rework application
US20080125342A1 (en) 2006-11-07 2008-05-29 Advanced Technology Materials, Inc. Formulations for cleaning memory device structures
SG177201A1 (en) 2006-12-21 2012-01-30 Advanced Tech Materials Compositions and methods for the selective removal of silicon nitride
US20100087065A1 (en) 2007-01-31 2010-04-08 Advanced Technology Materials, Inc. Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications
TWI516573B (zh) 2007-02-06 2016-01-11 安堤格里斯公司 選擇性移除ＴｉＳｉＮ之組成物及方法
JP2008277723A (ja) * 2007-03-30 2008-11-13 Fujifilm Corp 金属用研磨液及び研磨方法
US20100112728A1 (en) * 2007-03-31 2010-05-06 Advanced Technology Materials, Inc. Methods for stripping material for wafer reclamation
JP4967800B2 (ja) 2007-05-17 2012-07-04 凸版印刷株式会社 銅溶解液およびそれを用いた銅または銅合金のエッチング方法
US7976723B2 (en) * 2007-05-17 2011-07-12 International Business Machines Corporation Method for kinetically controlled etching of copper
JP4881916B2 (ja) * 2007-06-14 2012-02-22 メック株式会社 表面粗化剤
US20100261632A1 (en) 2007-08-02 2010-10-14 Advanced Technology Materials, Inc. Non-fluoride containing composition for the removal of residue from a microelectronic device
WO2009026324A2 (en) 2007-08-20 2009-02-26 Advanced Technology Materials, Inc. Composition and method for removing ion-implanted photoresist
JP5329786B2 (ja) * 2007-08-31 2013-10-30 株式会社東芝 研磨液および半導体装置の製造方法
JP5182612B2 (ja) 2007-11-12 2013-04-17 凸版印刷株式会社 エッチング液及び該エッチング液を用いた配線基板の製造方法
KR20100101136A (ko) * 2008-01-15 2010-09-16 미쓰비시 세이시 가부시키가이샤 구리 또는 구리 합금용의 에칭액, 에칭 전처리액 및 에칭 방법
TWI591158B (zh) 2008-03-07 2017-07-11 恩特葛瑞斯股份有限公司 非選擇性氧化物蝕刻濕清潔組合物及使用方法
US8026200B2 (en) 2008-05-01 2011-09-27 Advanced Technology Materials, Inc. Low pH mixtures for the removal of high density implanted resist
TW201013338A (en) 2008-08-04 2010-04-01 Advanced Tech Materials Environmentally friendly polymer stripping compositions
US9177827B2 (en) * 2009-12-25 2015-11-03 Mitsubishi Gas Chemical Company, Inc. Etchant and method for manufacturing semiconductor device using same
JP2013533631A (ja) 2010-07-16 2013-08-22 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド エッチング後残渣を除去するための水性洗浄剤
JP6101421B2 (ja) 2010-08-16 2017-03-22 インテグリス・インコーポレーテッド 銅または銅合金用エッチング液
SG189292A1 (en) 2010-10-06 2013-05-31 Advanced Tech Materials Composition and process for selectively etching metal nitrides
TWI502065B (zh) 2010-10-13 2015-10-01 Entegris Inc 抑制氮化鈦腐蝕之組成物及方法
KR102064487B1 (ko) 2011-01-13 2020-01-10 엔테그리스, 아이엔씨. 세륨-함유 용액에 의해 발생된 입자의 제거를 위한 배합물

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