HK1169136A1 - 雙組分蝕刻 - Google Patents

雙組分蝕刻

Info

Publication number
HK1169136A1
HK1169136A1 HK12109701.7A HK12109701A HK1169136A1 HK 1169136 A1 HK1169136 A1 HK 1169136A1 HK 12109701 A HK12109701 A HK 12109701A HK 1169136 A1 HK1169136 A1 HK 1169136A1
Authority
HK
Hong Kong
Prior art keywords
component etching
etching
component
Prior art date
Application number
HK12109701.7A
Other languages
English (en)
Inventor
．多爾
．普魯默
．詹姆斯
．科勒
Original Assignee
默克專利股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 默克專利股份有限公司 filed Critical 默克專利股份有限公司
Publication of HK1169136A1 publication Critical patent/HK1169136A1/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
HK12109701.7A 2009-06-04 2012-10-03 雙組分蝕刻 HK1169136A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP09007411 2009-06-04
PCT/EP2010/002949 WO2010139390A1 (en) 2009-06-04 2010-05-12 Two component etching

Publications (1)

Publication Number Publication Date
HK1169136A1 true HK1169136A1 (zh) 2013-01-18

Family

ID=42830717

Family Applications (1)

Application Number Title Priority Date Filing Date
HK12109701.7A HK1169136A1 (zh) 2009-06-04 2012-10-03 雙組分蝕刻

Country Status (9)

Country Link
US (1) US8647526B2 (zh)
EP (1) EP2438140A1 (zh)
JP (1) JP5801798B2 (zh)
KR (1) KR20120036939A (zh)
CN (1) CN102449112B (zh)
HK (1) HK1169136A1 (zh)
SG (1) SG176274A1 (zh)
TW (1) TWI481693B (zh)
WO (1) WO2010139390A1 (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013008877A (ja) * 2011-06-24 2013-01-10 Kuraray Co Ltd カーボンナノチューブ層とオーバーコート層とを具備する複合層のパターン形成方法、及び前記方法で形成されたパターン
CN102929418A (zh) * 2011-08-09 2013-02-13 群康科技(深圳)有限公司 装饰膜、影像显示系统及触控感测装置的制造方法
TWI495560B (zh) * 2011-08-09 2015-08-11 Chimei Innolux Corp 透明基底上的裝飾膜、影像顯示系統及觸控感測裝置之製造方法
TW201323583A (zh) * 2011-08-12 2013-06-16 Univ Osaka 蝕刻方法
JP6011234B2 (ja) * 2012-10-16 2016-10-19 日立化成株式会社 組成物
JP6060611B2 (ja) * 2012-10-16 2017-01-18 日立化成株式会社 組成物
JP2014082330A (ja) * 2012-10-16 2014-05-08 Hitachi Chemical Co Ltd ＳｉＮ膜の除去方法
JP6136186B2 (ja) * 2012-10-16 2017-05-31 日立化成株式会社 液状組成物
WO2014061245A1 (ja) * 2012-10-16 2014-04-24 日立化成株式会社 エッチング材
US9882082B2 (en) 2012-11-14 2018-01-30 Sun Chemical Corporation Compositions and processes for fabrication of rear passivated solar cells
WO2014192266A1 (ja) * 2013-05-31 2014-12-04 日立化成株式会社 エッチング組成物
CN104993019A (zh) * 2015-07-09 2015-10-21 苏州阿特斯阳光电力科技有限公司 一种局部背接触太阳能电池的制备方法
TWI550886B (zh) * 2015-07-10 2016-09-21 國立屏東科技大學 矽基板表面粗糙化方法
JP2016086187A (ja) * 2016-02-01 2016-05-19 日立化成株式会社 ＳｉＮ膜の除去方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3979241A (en) * 1968-12-28 1976-09-07 Fujitsu Ltd. Method of etching films of silicon nitride and silicon dioxide
US4781792A (en) * 1985-05-07 1988-11-01 Hogan James V Method for permanently marking glass
GB9210514D0 (en) * 1992-05-16 1992-07-01 Micro Image Technology Ltd Etching compositions
WO1997002958A1 (en) * 1995-07-10 1997-01-30 Advanced Chemical Systems International Organic amine/hydrogen fluoride etchant composition and method
US5698503A (en) * 1996-11-08 1997-12-16 Ashland Inc. Stripping and cleaning composition
DE19962136A1 (de) * 1999-12-22 2001-06-28 Merck Patent Gmbh Verfahren zur Rauhätzung von Siliziumsolarzellen
KR100812891B1 (ko) 2000-04-28 2008-03-11 메르크 파텐트 게엠베하 무기물 표면용 에칭 페이스트
EP1295320A2 (en) * 2000-06-30 2003-03-26 MEMC Electronic Materials, Inc. Process for etching silicon wafers
GB2367788A (en) * 2000-10-16 2002-04-17 Seiko Epson Corp Etching using an ink jet print head
DE10241300A1 (de) * 2002-09-04 2004-03-18 Merck Patent Gmbh Ätzpasten für Siliziumoberflächen und -schichten
US20040188385A1 (en) * 2003-03-26 2004-09-30 Kenji Yamada Etching agent composition for thin films having high permittivity and process for etching
AU2003901559A0 (en) 2003-04-07 2003-05-01 Unisearch Limited Glass texturing method
JP4673222B2 (ja) * 2003-10-14 2011-04-20 株式会社Ａｄｅｋａ ドライフィルムレジスト
CN1950338B (zh) * 2004-03-05 2012-05-16 霍尼韦尔国际公司 杂环胺的离子液体
DE102005007743A1 (de) * 2005-01-11 2006-07-20 Merck Patent Gmbh Druckfähiges Medium zur Ätzung von Siliziumdioxid- und Siliziumnitridschichten
DE102005033724A1 (de) * 2005-07-15 2007-01-18 Merck Patent Gmbh Druckfähige Ätzmedien für Siliziumdioxid-und Siliziumnitridschichten
GB0608463D0 (en) * 2006-04-27 2006-06-07 Sericol Ltd A printing ink
EP1918985B1 (en) * 2006-10-31 2010-05-26 S.O.I.TEC. Silicon on Insulator Technologies S.A. Methods for characterizing defects on silicon surfaces, etching composition for silicon surfaces and process of treating silicon surfaces with the etching composition
US7582398B2 (en) * 2007-06-13 2009-09-01 Xerox Corporation Inkless reimageable printing paper and method
JP4947654B2 (ja) * 2007-09-28 2012-06-06 シャープ株式会社 誘電体膜のパターニング方法

Also Published As

Publication number Publication date
CN102449112A (zh) 2012-05-09
JP2012529163A (ja) 2012-11-15
KR20120036939A (ko) 2012-04-18
US20120085965A1 (en) 2012-04-12
CN102449112B (zh) 2014-09-24
EP2438140A1 (en) 2012-04-11
SG176274A1 (en) 2012-01-30
TW201116612A (en) 2011-05-16
WO2010139390A1 (en) 2010-12-09
US8647526B2 (en) 2014-02-11
TWI481693B (zh) 2015-04-21
JP5801798B2 (ja) 2015-10-28

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20190510