TWI502065B - 抑制氮化鈦腐蝕之組成物及方法 - Google Patents
抑制氮化鈦腐蝕之組成物及方法 Download PDFInfo
- Publication number
- TWI502065B TWI502065B TW100137099A TW100137099A TWI502065B TW I502065 B TWI502065 B TW I502065B TW 100137099 A TW100137099 A TW 100137099A TW 100137099 A TW100137099 A TW 100137099A TW I502065 B TWI502065 B TW I502065B
- Authority
- TW
- Taiwan
- Prior art keywords
- composition
- ammonium
- tetramethylammonium
- borate
- hydroxide
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title claims description 120
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 title claims description 32
- 238000000034 method Methods 0.000 title claims description 29
- 238000005260 corrosion Methods 0.000 title description 5
- 230000007797 corrosion Effects 0.000 title description 5
- 239000000463 material Substances 0.000 claims description 54
- 238000004140 cleaning Methods 0.000 claims description 53
- 238000004377 microelectronic Methods 0.000 claims description 51
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 41
- -1 borate compound Chemical class 0.000 claims description 40
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 39
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 38
- 150000001412 amines Chemical class 0.000 claims description 29
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 claims description 26
- 239000000356 contaminant Substances 0.000 claims description 26
- 239000007800 oxidant agent Substances 0.000 claims description 24
- 229910021645 metal ion Inorganic materials 0.000 claims description 22
- 229910021529 ammonia Inorganic materials 0.000 claims description 19
- 239000002245 particle Substances 0.000 claims description 19
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 12
- 239000003989 dielectric material Substances 0.000 claims description 12
- QZNWNKFWDJRMLV-UHFFFAOYSA-N azane;2-hydroxy-4-[(4-hydroxy-1,3,2,4-dioxadiboretan-2-yl)oxy]-1,3,2,4-dioxadiboretane;tetrahydrate Chemical compound N.N.O.O.O.O.O1B(O)OB1OB1OB(O)O1 QZNWNKFWDJRMLV-UHFFFAOYSA-N 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 9
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 claims description 8
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 claims description 8
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims description 8
- 238000011065 in-situ storage Methods 0.000 claims description 8
- GDTSJMKGXGJFGQ-UHFFFAOYSA-N 3,7-dioxido-2,4,6,8,9-pentaoxa-1,3,5,7-tetraborabicyclo[3.3.1]nonane Chemical compound O1B([O-])OB2OB([O-])OB1O2 GDTSJMKGXGJFGQ-UHFFFAOYSA-N 0.000 claims description 7
- 239000000908 ammonium hydroxide Substances 0.000 claims description 7
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 6
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 claims description 6
- 150000001450 anions Chemical class 0.000 claims description 6
- UAOMVDZJSHZZME-UHFFFAOYSA-N diisopropylamine Chemical compound CC(C)NC(C)C UAOMVDZJSHZZME-UHFFFAOYSA-N 0.000 claims description 6
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 6
- 238000004380 ashing Methods 0.000 claims description 5
- BEOODBYKENEKIC-UHFFFAOYSA-N azanium;bromate Chemical compound [NH4+].[O-]Br(=O)=O BEOODBYKENEKIC-UHFFFAOYSA-N 0.000 claims description 5
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 claims description 5
- BMVXCPBXGZKUPN-UHFFFAOYSA-N 1-hexanamine Chemical compound CCCCCCN BMVXCPBXGZKUPN-UHFFFAOYSA-N 0.000 claims description 4
- OISVCGZHLKNMSJ-UHFFFAOYSA-N 2,6-dimethylpyridine Chemical compound CC1=CC=CC(C)=N1 OISVCGZHLKNMSJ-UHFFFAOYSA-N 0.000 claims description 4
- KDSNLYIMUZNERS-UHFFFAOYSA-N 2-methylpropanamine Chemical compound CC(C)CN KDSNLYIMUZNERS-UHFFFAOYSA-N 0.000 claims description 4
- BSKHPKMHTQYZBB-UHFFFAOYSA-N 2-methylpyridine Chemical compound CC1=CC=CC=N1 BSKHPKMHTQYZBB-UHFFFAOYSA-N 0.000 claims description 4
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910020366 ClO 4 Inorganic materials 0.000 claims description 4
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 claims description 4
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 claims description 4
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 claims description 4
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 4
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 claims description 4
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 claims description 4
- WGQKYBSKWIADBV-UHFFFAOYSA-N benzylamine Chemical compound NCC1=CC=CC=C1 WGQKYBSKWIADBV-UHFFFAOYSA-N 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- AWJUIBRHMBBTKR-UHFFFAOYSA-N isoquinoline Chemical compound C1=NC=CC2=CC=CC=C21 AWJUIBRHMBBTKR-UHFFFAOYSA-N 0.000 claims description 4
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 claims description 4
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims description 4
- 239000011734 sodium Substances 0.000 claims description 4
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 claims description 4
- CRWJEUDFKNYSBX-UHFFFAOYSA-N sodium;hypobromite Chemical compound [Na+].Br[O-] CRWJEUDFKNYSBX-UHFFFAOYSA-N 0.000 claims description 4
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 4
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims description 3
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 3
- DDFYFBUWEBINLX-UHFFFAOYSA-M tetramethylammonium bromide Chemical compound [Br-].C[N+](C)(C)C DDFYFBUWEBINLX-UHFFFAOYSA-M 0.000 claims description 3
- JPIGSMKDJQPHJC-UHFFFAOYSA-N 1-(2-aminoethoxy)ethanol Chemical compound CC(O)OCCN JPIGSMKDJQPHJC-UHFFFAOYSA-N 0.000 claims description 2
- NVLADMORQQMDKF-UHFFFAOYSA-N 1-ethyl-1-oxidopyrrolidin-1-ium Chemical compound CC[N+]1([O-])CCCC1 NVLADMORQQMDKF-UHFFFAOYSA-N 0.000 claims description 2
- YIZTVEDOQDZLOH-UHFFFAOYSA-N 1-methyl-1-oxidopyrrolidin-1-ium Chemical compound C[N+]1([O-])CCCC1 YIZTVEDOQDZLOH-UHFFFAOYSA-N 0.000 claims description 2
- MCTWTZJPVLRJOU-UHFFFAOYSA-N 1-methyl-1H-imidazole Chemical compound CN1C=CN=C1 MCTWTZJPVLRJOU-UHFFFAOYSA-N 0.000 claims description 2
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 claims description 2
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 claims description 2
- MIJDSYMOBYNHOT-UHFFFAOYSA-N 2-(ethylamino)ethanol Chemical compound CCNCCO MIJDSYMOBYNHOT-UHFFFAOYSA-N 0.000 claims description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 2
- YSAANLSYLSUVHB-UHFFFAOYSA-N 2-[2-(dimethylamino)ethoxy]ethanol Chemical compound CN(C)CCOCCO YSAANLSYLSUVHB-UHFFFAOYSA-N 0.000 claims description 2
- NRGGMCIBEHEAIL-UHFFFAOYSA-N 2-ethylpyridine Chemical compound CCC1=CC=CC=N1 NRGGMCIBEHEAIL-UHFFFAOYSA-N 0.000 claims description 2
- IWTFOFMTUOBLHG-UHFFFAOYSA-N 2-methoxypyridine Chemical compound COC1=CC=CC=N1 IWTFOFMTUOBLHG-UHFFFAOYSA-N 0.000 claims description 2
- NJBCRXCAPCODGX-UHFFFAOYSA-N 2-methyl-n-(2-methylpropyl)propan-1-amine Chemical compound CC(C)CNCC(C)C NJBCRXCAPCODGX-UHFFFAOYSA-N 0.000 claims description 2
- GDDNTTHUKVNJRA-UHFFFAOYSA-N 3-bromo-3,3-difluoroprop-1-ene Chemical compound FC(F)(Br)C=C GDDNTTHUKVNJRA-UHFFFAOYSA-N 0.000 claims description 2
- QSHYGLAZPRJAEZ-UHFFFAOYSA-N 4-(chloromethyl)-2-(2-methylphenyl)-1,3-thiazole Chemical compound CC1=CC=CC=C1C1=NC(CCl)=CS1 QSHYGLAZPRJAEZ-UHFFFAOYSA-N 0.000 claims description 2
- XWNSFEAWWGGSKJ-UHFFFAOYSA-N 4-acetyl-4-methylheptanedinitrile Chemical compound N#CCCC(C)(C(=O)C)CCC#N XWNSFEAWWGGSKJ-UHFFFAOYSA-N 0.000 claims description 2
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 claims description 2
- ROFVEXUMMXZLPA-UHFFFAOYSA-N Bipyridyl Chemical compound N1=CC=CC=C1C1=CC=CC=N1 ROFVEXUMMXZLPA-UHFFFAOYSA-N 0.000 claims description 2
- LJUOWQIHIASIMK-UHFFFAOYSA-N C[N+]1(C2=CC=C1C=C1C=CC(C=C3C=CC(=CC=4C=CC(=C2)N4)N3)=N1)[O-] Chemical compound C[N+]1(C2=CC=C1C=C1C=CC(C=C3C=CC(=CC=4C=CC(=C2)N4)N3)=N1)[O-] LJUOWQIHIASIMK-UHFFFAOYSA-N 0.000 claims description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 2
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 claims description 2
- LFTLOKWAGJYHHR-UHFFFAOYSA-N N-methylmorpholine N-oxide Chemical compound CN1(=O)CCOCC1 LFTLOKWAGJYHHR-UHFFFAOYSA-N 0.000 claims description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- 239000004153 Potassium bromate Substances 0.000 claims description 2
- CZPWVGJYEJSRLH-UHFFFAOYSA-N Pyrimidine Chemical compound C1=CN=CN=C1 CZPWVGJYEJSRLH-UHFFFAOYSA-N 0.000 claims description 2
- 239000005708 Sodium hypochlorite Substances 0.000 claims description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 2
- KHPLPBHMTCTCHA-UHFFFAOYSA-N ammonium chlorate Chemical compound N.OCl(=O)=O KHPLPBHMTCTCHA-UHFFFAOYSA-N 0.000 claims description 2
- 229910001870 ammonium persulfate Inorganic materials 0.000 claims description 2
- 150000001448 anilines Chemical class 0.000 claims description 2
- KBKZYWOOZPIUJT-UHFFFAOYSA-N azane;hypochlorous acid Chemical compound N.ClO KBKZYWOOZPIUJT-UHFFFAOYSA-N 0.000 claims description 2
- ZRDJERPXCFOFCP-UHFFFAOYSA-N azane;iodic acid Chemical compound [NH4+].[O-]I(=O)=O ZRDJERPXCFOFCP-UHFFFAOYSA-N 0.000 claims description 2
- YUUVAZCKXDQEIS-UHFFFAOYSA-N azanium;chlorite Chemical compound [NH4+].[O-]Cl=O YUUVAZCKXDQEIS-UHFFFAOYSA-N 0.000 claims description 2
- URGYLQKORWLZAQ-UHFFFAOYSA-N azanium;periodate Chemical compound [NH4+].[O-]I(=O)(=O)=O URGYLQKORWLZAQ-UHFFFAOYSA-N 0.000 claims description 2
- NDKBVBUGCNGSJJ-UHFFFAOYSA-M benzyltrimethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)CC1=CC=CC=C1 NDKBVBUGCNGSJJ-UHFFFAOYSA-M 0.000 claims description 2
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 claims description 2
- 229960001231 choline Drugs 0.000 claims description 2
- LFINSDKRYHNMRB-UHFFFAOYSA-N diazanium;oxido sulfate Chemical compound [NH4+].[NH4+].[O-]OS([O-])(=O)=O LFINSDKRYHNMRB-UHFFFAOYSA-N 0.000 claims description 2
- JQDCIBMGKCMHQV-UHFFFAOYSA-M diethyl(dimethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(C)CC JQDCIBMGKCMHQV-UHFFFAOYSA-M 0.000 claims description 2
- 229940043279 diisopropylamine Drugs 0.000 claims description 2
- HPYNZHMRTTWQTB-UHFFFAOYSA-N dimethylpyridine Natural products CC1=CC=CN=C1C HPYNZHMRTTWQTB-UHFFFAOYSA-N 0.000 claims description 2
- WEHWNAOGRSTTBQ-UHFFFAOYSA-N dipropylamine Chemical compound CCCNCCC WEHWNAOGRSTTBQ-UHFFFAOYSA-N 0.000 claims description 2
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 claims description 2
- 150000002506 iron compounds Chemical class 0.000 claims description 2
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 claims description 2
- LFMTUFVYMCDPGY-UHFFFAOYSA-N n,n-diethylethanamine oxide Chemical compound CC[N+]([O-])(CC)CC LFMTUFVYMCDPGY-UHFFFAOYSA-N 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- AENSXLNDMRQIEX-UHFFFAOYSA-L oxido sulfate;tetrabutylazanium Chemical compound [O-]OS([O-])(=O)=O.CCCC[N+](CCCC)(CCCC)CCCC.CCCC[N+](CCCC)(CCCC)CCCC AENSXLNDMRQIEX-UHFFFAOYSA-L 0.000 claims description 2
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 claims description 2
- FHHJDRFHHWUPDG-UHFFFAOYSA-N peroxysulfuric acid Chemical compound OOS(O)(=O)=O FHHJDRFHHWUPDG-UHFFFAOYSA-N 0.000 claims description 2
- 229920000768 polyamine Polymers 0.000 claims description 2
- 229940094037 potassium bromate Drugs 0.000 claims description 2
- 235000019396 potassium bromate Nutrition 0.000 claims description 2
- SATVIFGJTRRDQU-UHFFFAOYSA-N potassium hypochlorite Chemical compound [K+].Cl[O-] SATVIFGJTRRDQU-UHFFFAOYSA-N 0.000 claims description 2
- JLKDVMWYMMLWTI-UHFFFAOYSA-M potassium iodate Chemical compound [K+].[O-]I(=O)=O JLKDVMWYMMLWTI-UHFFFAOYSA-M 0.000 claims description 2
- 239000001230 potassium iodate Substances 0.000 claims description 2
- 229940093930 potassium iodate Drugs 0.000 claims description 2
- 235000006666 potassium iodate Nutrition 0.000 claims description 2
- 239000012286 potassium permanganate Substances 0.000 claims description 2
- ORQYPOUSZINNCB-UHFFFAOYSA-N potassium;hypobromite Chemical compound [K+].Br[O-] ORQYPOUSZINNCB-UHFFFAOYSA-N 0.000 claims description 2
- ILVXOBCQQYKLDS-UHFFFAOYSA-N pyridine N-oxide Chemical compound [O-][N+]1=CC=CC=C1 ILVXOBCQQYKLDS-UHFFFAOYSA-N 0.000 claims description 2
- 125000004076 pyridyl group Chemical group 0.000 claims description 2
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 claims description 2
- YBRBMKDOPFTVDT-UHFFFAOYSA-N tert-butylamine Chemical compound CC(C)(C)N YBRBMKDOPFTVDT-UHFFFAOYSA-N 0.000 claims description 2
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims description 2
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 2
- LUVHDTDFZLTVFM-UHFFFAOYSA-M tetramethylazanium;chlorate Chemical compound [O-]Cl(=O)=O.C[N+](C)(C)C LUVHDTDFZLTVFM-UHFFFAOYSA-M 0.000 claims description 2
- FDXKBUSUNHRUIZ-UHFFFAOYSA-M tetramethylazanium;chlorite Chemical compound [O-]Cl=O.C[N+](C)(C)C FDXKBUSUNHRUIZ-UHFFFAOYSA-M 0.000 claims description 2
- HLQAWDQQEJSALG-UHFFFAOYSA-M tetramethylazanium;periodate Chemical compound C[N+](C)(C)C.[O-]I(=O)(=O)=O HLQAWDQQEJSALG-UHFFFAOYSA-M 0.000 claims description 2
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 claims description 2
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 claims description 2
- UYPYRKYUKCHHIB-UHFFFAOYSA-N trimethylamine N-oxide Chemical compound C[N+](C)(C)[O-] UYPYRKYUKCHHIB-UHFFFAOYSA-N 0.000 claims description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims 1
- 229910002651 NO3 Inorganic materials 0.000 claims 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims 1
- DSRWGCATHAGQRW-UHFFFAOYSA-N [I+].C[N+](C)(C)C Chemical compound [I+].C[N+](C)(C)C DSRWGCATHAGQRW-UHFFFAOYSA-N 0.000 claims 1
- QSRFYFHZPSGRQX-UHFFFAOYSA-N benzyl(tributyl)azanium Chemical compound CCCC[N+](CCCC)(CCCC)CC1=CC=CC=C1 QSRFYFHZPSGRQX-UHFFFAOYSA-N 0.000 claims 1
- FKPSBYZGRQJIMO-UHFFFAOYSA-M benzyl(triethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC1=CC=CC=C1 FKPSBYZGRQJIMO-UHFFFAOYSA-M 0.000 claims 1
- 239000013317 conjugated microporous polymer Substances 0.000 claims 1
- 239000002957 persistent organic pollutant Substances 0.000 claims 1
- ZCWKIFAQRXNZCH-UHFFFAOYSA-M tetramethylazanium;perchlorate Chemical compound C[N+](C)(C)C.[O-]Cl(=O)(=O)=O ZCWKIFAQRXNZCH-UHFFFAOYSA-M 0.000 claims 1
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 claims 1
- 238000009472 formulation Methods 0.000 description 20
- 239000000758 substrate Substances 0.000 description 11
- 230000008569 process Effects 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000002156 mixing Methods 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000012530 fluid Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000003082 abrasive agent Substances 0.000 description 3
- 125000003277 amino group Chemical group 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000012895 dilution Substances 0.000 description 3
- 238000010790 dilution Methods 0.000 description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 239000004615 ingredient Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 2
- 150000001642 boronic acid derivatives Chemical class 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- SFZULDYEOVSIKM-UHFFFAOYSA-N chembl321317 Chemical group C1=CC(C(=N)NO)=CC=C1C1=CC=C(C=2C=CC(=CC=2)C(=N)NO)O1 SFZULDYEOVSIKM-UHFFFAOYSA-N 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 150000002978 peroxides Chemical class 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- MNAHCZZIMJUOPZ-UHFFFAOYSA-N BrO.N Chemical compound BrO.N MNAHCZZIMJUOPZ-UHFFFAOYSA-N 0.000 description 1
- 125000000041 C6-C10 aryl group Chemical group 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229920000742 Cotton Polymers 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 239000012028 Fenton's reagent Substances 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229930182556 Polyacetal Natural products 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 101000580353 Rhea americana Rheacalcin-1 Proteins 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- 125000005210 alkyl ammonium group Chemical group 0.000 description 1
- VAZSKTXWXKYQJF-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)OOS([O-])=O VAZSKTXWXKYQJF-UHFFFAOYSA-N 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- MMQCMMVCGMXMPN-UHFFFAOYSA-N azanium;perbromate Chemical compound [NH4+].[O-]Br(=O)(=O)=O MMQCMMVCGMXMPN-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- ANHXKSXTBQIUAZ-UHFFFAOYSA-M benzyl(tributyl)azanium;hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CC1=CC=CC=C1 ANHXKSXTBQIUAZ-UHFFFAOYSA-M 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical class OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 125000002843 carboxylic acid group Chemical group 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004035 construction material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 229950010286 diolamine Drugs 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 238000003306 harvesting Methods 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 229920001903 high density polyethylene Polymers 0.000 description 1
- 239000004700 high-density polyethylene Substances 0.000 description 1
- MGZTXXNFBIUONY-UHFFFAOYSA-N hydrogen peroxide;iron(2+);sulfuric acid Chemical compound [Fe+2].OO.OS(O)(=O)=O MGZTXXNFBIUONY-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000006193 liquid solution Substances 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- GXSKKEQDZDDIQS-UHFFFAOYSA-N n,n-diethylethanamine;phenylmethanol Chemical compound CCN(CC)CC.OCC1=CC=CC=C1 GXSKKEQDZDDIQS-UHFFFAOYSA-N 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000010979 pH adjustment Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 150000004977 peroxyborates Chemical class 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920002239 polyacrylonitrile Polymers 0.000 description 1
- 229920001083 polybutene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 150000003856 quaternary ammonium compounds Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000012487 rinsing solution Substances 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- GXSTTWULRZGQGF-UHFFFAOYSA-M tetramethylazanium perbromate Chemical compound C[N+](C)(C)C.[O-][Br](=O)(=O)=O GXSTTWULRZGQGF-UHFFFAOYSA-M 0.000 description 1
- NAWVCYVCEVTDBQ-UHFFFAOYSA-M tetramethylazanium;bromate Chemical compound [O-]Br(=O)=O.C[N+](C)(C)C NAWVCYVCEVTDBQ-UHFFFAOYSA-M 0.000 description 1
- ZRVXFJFFJZFRLQ-UHFFFAOYSA-M tetramethylazanium;iodate Chemical compound [O-]I(=O)=O.C[N+](C)(C)C ZRVXFJFFJZFRLQ-UHFFFAOYSA-M 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 239000010455 vermiculite Substances 0.000 description 1
- 229910052902 vermiculite Inorganic materials 0.000 description 1
- 235000019354 vermiculite Nutrition 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/046—Salts
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0073—Anticorrosion compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/39—Organic or inorganic per-compounds
- C11D3/3942—Inorganic per-compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/39—Organic or inorganic per-compounds
- C11D3/3947—Liquid compositions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
本發明係關於用於自表面(較佳為含氮化鈦之表面)移除殘留物之組成物,及其之製造及使用方法。
廣泛地實施利用不含金屬之鹼性溶液清潔積體電路(IC)基板(諸如矽晶圓),以移除有機及金屬污染。此類型之一種常用的鹼性溶液稱為SC-1或RCA-1,其包含氫氧化銨、過氧化氫、及水之水性混合物(例如,1:1:5之30% H2
O2
、28% NH4
OH及H2
O)。有各種清潔任務可利用SC-1完成,尤其係於矽晶圓製造後立即對其進行清潔,於閘極氧化物生長之前立即清潔該等晶圓,稍後於IC處理序列中移除氧化物蝕刻殘留物,及選擇性蝕刻及抗蝕劑顆粒移除。過氧化氫之用途係藉由連續形成保護性氧化物層而保護矽金屬免於暴露至強酸或鹼,以防止蝕刻或粗化矽表面。過氧化氫會由於金屬與過氧化氫之氧反應而不利地腐蝕基板表面上之金屬。
氮化鈦(TiN)薄膜逐漸成為廣泛使用的金屬閘極結構組件,尤其係於32奈米節點及超越的技術中。雖然TiN相當耐腐蝕(例如,對中度酸性溶液),但典型的前段製程(FEOL;front-end-of-the-line)清潔過程會使TiN暴露至含過氧化物之溶液(例如,SC-1),其即使係於室溫下仍會劇烈地侵蝕TiN。由於在整個FEOL製程中重複地使用SC-1來移除殘留物(例如,顆粒及有機及金屬離子污染物),因此SC-1與TiN之不相容性成為微電子工業之危機。
因此,本發明之一目的為提供用於自IC基板及其他微電子裝置有效移除殘留物之改良組成物,該等組成物可與諸如氮化鈦之金屬閘極材料相容。
本發明大致係關於清潔組成物及其製造與使用方法。本發明之一態樣係關於一種用於自其上具有殘留物之微電子裝置清潔該殘留物,同時不會損及存在於微電子裝置表面上之氮化鈦材料的組成物及方法。
在一態樣中,描述一種包含至少一種胺、至少一種氧化劑、水、及至少一種硼酸鹽物種,由該等成分所組成,或基本上由該等成分所組成的清潔組成物,其中該清潔組成物適用於自其上具有殘留物之微電子裝置清潔該殘留物。該至少一種硼酸鹽化合物較佳包含單硼酸根、二硼酸根、三硼酸根、四硼酸根、五硼酸根、六硼酸根、或過硼酸根陰離子。再更佳地,該至少一種硼酸鹽化合物包含銨陽離子。該至少一種硼酸鹽化合物最佳包含四水合四硼酸銨。在一具體例中,該至少一種硼酸鹽係於原位產生。
在另一態樣中,描述一種包含氨、至少一種氧化劑、水、及至少一種硼酸鹽物種,由該等成分所組成,或基本上由該等成分所組成的清潔組成物,其中該清潔組成物適用於自其上具有殘留物之微電子裝置清潔該殘留物。該至少一種硼酸鹽化合物較佳包含單硼酸根、二硼酸根、三硼酸根、四硼酸根、五硼酸根、六硼酸根、或過硼酸根陰離子。再更佳地,該至少一種硼酸鹽化合物包含銨陽離子。該至少一種硼酸鹽化合物最佳包含四水合四硼酸銨。在一具體例中,該至少一種硼酸鹽係於原位產生。
在又另一態樣中,描述一種包含至少一種胺、過氧化氫、水、及至少一種硼酸鹽物種,由該等成分所組成,或基本上由該等成分所組成的清潔組成物,其中該清潔組成物適用於自其上具有殘留物之微電子裝置清潔該殘留物。該至少一種硼酸鹽化合物較佳包含單硼酸根、二硼酸根、三硼酸根、四硼酸根、五硼酸根、六硼酸根、或過硼酸根陰離子。再更佳地,該至少一種硼酸鹽化合物包含銨陽離子。該至少一種硼酸鹽化合物最佳包含四水合四硼酸銨。在一具體例中,該至少一種硼酸鹽係於原位產生。
在又另一態樣中,描述一種包含氨、過氧化氫、水、及至少一種硼酸鹽物種,由該等成分所組成,或基本上由該等成分所組成的清潔組成物,其中該清潔組成物適用於自其上具有殘留物之微電子裝置清潔該殘留物。該至少一種硼酸鹽化合物較佳包含單硼酸根、二硼酸根、三硼酸根、四硼酸根、五硼酸根、六硼酸根、或過硼酸根陰離子。再更佳地,該至少一種硼酸鹽化合物包含銨陽離子。該至少一種硼酸鹽化合物最佳包含四水合四硼酸銨。在一具體例中,該至少一種硼酸鹽係於原位產生。
在又另一具體例中,描述一種套組,該套組包括存於一或多個容器中之一或多種用於形成清潔組成物的下列試劑,該一或多種試劑係選自由至少一種胺、至少一種氧化劑、水、及至少一種硼酸鹽物種所組成之群,及其中該套組適於形成適用於自其上具有殘留物之微電子裝置清潔該殘留物的清潔組成物。
在另一具體例中,描述一種自其上具有材料之微電子裝置移除該材料的方法,該方法包括使該微電子裝置與清潔組成物接觸足夠的時間,以自該微電子裝置至少部分移除該材料,其中該清潔組成物包含至少一種胺、至少一種氧化劑、水、及至少一種硼酸鹽物種。該材料包括選自由灰化後殘留物、蝕刻後殘留物、CMP後殘留物、顆粒、有機污染物、金屬離子污染物、及其組合所組成之群之殘留物。該至少一種硼酸鹽化合物較佳包含單硼酸根、二硼酸根、三硼酸根、四硼酸根、五硼酸根、六硼酸根、或過硼酸根陰離子。再更佳地,該至少一種硼酸鹽化合物包含銨陽離子。該至少一種硼酸鹽化合物最佳包含四水合四硼酸銨。在一具體例中,該至少一種硼酸鹽係於原位產生。
本發明之其他態樣、特徵及優點當可由隨後之揭示內容及隨附之申請專利範圍而更加明白。
本發明大致係關於用於自其上具有殘留物(較佳為顆粒及有機及金屬離子污染物)之微電子裝置移除該殘留物的組成物,該等組成物較佳可與微電子裝置表面上之氮化鈦、氮化鉭、及低k介電材料相容。
為容易參考起見,「微電子裝置」係相當於經製造用於微電子、積體電路、能量收集、或電腦晶片應用中之半導體基板、平板顯示器、相變記憶裝置、太陽能面板及包括太陽能電池裝置、光伏打元件、及微機電系統(MEMS)之其他產品。應明瞭術語「微電子裝置」、「微電子基板」及「微電子裝置結構」並不具任何限制意味,且其包括任何最終將成為微電子裝置或微電子組件的基板或結構。微電子裝置可為圖案化、毯覆式、控制及/或測試裝置。
如本文所定義之「殘留物」係相當於蝕刻後殘留物、灰化後殘留物、CMP後殘留物、顆粒、有機污染物、金屬離子污染物、及其組合。
如本文所定義之「顆粒」係相當於CMP研磨劑、再沈積的材料諸如光阻劑或殘材(例如,可脫離及再附著於加工表面之介電材料)、蝕刻殘留物、自工具脫落之材料(諸如來自植入器或RIE工具之碎屑)、環境灰塵等等。
如本文所定義之「有機污染物」係相當於由各種製程殘留的材料諸如光阻劑浮渣、蝕刻聚合物、抑制劑、及表面活性劑;或環境污染物諸如皮膚油類及來自設備之碎屑諸如潤滑劑及CMP墊碎屑。
如本文所定義之「金屬離子污染物」係相當於作為諸如金屬蝕刻或CMP之減去製程中之殘留物留下,或由諸如蝕刻之製程產生的金屬離子。金屬離子污染物包括,但不限於,鈉、鉀、鐵、鈰、及其組合。
如本文所使用之「蝕刻後殘留物」及「電漿蝕刻後殘留物」係相當於在氣相電漿蝕刻製程(例如,BEOL雙重金屬鑲嵌加工)後殘留的材料。蝕刻後殘留物之性質可為有機、有機金屬、有機矽、或無機,例如,含矽材料、含鈦材料、含氮材料、含氧材料、聚合殘留材料、含銅殘留材料(包括氧化銅殘留物)、含鎢殘留材料、含鈷殘留材料、蝕刻氣體殘留物諸如氯及氟、及其組合。
熟悉技藝人士熟知氨及水之組合相當於氫氧化銨。
如本文所定義之「低k介電材料」及ULK係相當於任何在層狀微電子裝置中使用作為介電材料的材料,其中該材料具有小於約3.5之介電常數。低k介電材料較佳包括低極性材料諸如含矽有機聚合物、含矽之有機/無機混合材料、有機矽酸鹽玻璃(OSG)、TEOS、氟化矽酸鹽玻璃(FSG)、二氧化矽、及摻碳氧化物(CDO)玻璃。低k介電材料最佳係使用有機矽烷及/或有機矽氧烷前驅物沈積。應明瞭低k介電材料可具有不同密度及不同孔隙度。
如本文所定義之「灰化後殘留物」係相當於在用於移除硬化光阻劑及/或底部抗反射塗層(BARC)材料之氧化或還原電漿灰化後殘留之材料。灰化後殘留物之性質可為有機、有機金屬、有機矽、或無機。
如本文所定義之「CMP後殘留物」係相當於來自拋光漿料之顆粒(例如,含矽石顆粒)、漿料中存在之化學品、拋光漿料之反應副產物、富含碳之顆粒、拋光墊顆粒、刷具卸載顆粒、設備構造材料顆粒、銅、氧化銅、含鋼材料、鋁、氧化鋁、含鋁材料、有機殘留物、及作為CMP製程之副產物的任何其他材料。
如本文所定義之「胺」物種包括至少一種第一、第二、或第三胺、氨、及/或第四銨氫氧化物化合物(例如,氫氧化烷基銨、氫氧化烷基芳基銨等),其限制條件為(i)同時包括羧酸基及胺基之物種,(ii)包括胺基之表面活性劑,及(iii)其中之胺基為取代基(例如,連接至芳基或雜環部分)之物種不被視為根據此定義之「胺」。供本發明用途用之胺包括,但不限於:脂族第一、第二、或第三胺;4、6、7、8、9或10員飽和或不飽和胺環;具有通式R1
R2
R3
R4
NOH之氫氧化烷基銨化合物,其中R1
、R2
、R3
及R4
係彼此相同或不同且係氫及C1
-C6
烷基(例如,甲基、乙基、丙基、丁基、戊基或己基);具有通式R1
R2
R3
R4
NOH之氫氧化烷基芳基銨化合物,其中R1
、R2
、R3
及R4
係彼此相同或不同且係氫、C1
-C6
烷基(例如,甲基、乙基、丙基、丁基、戊基或己基)及經取代或未經取代之C6
-C10
芳基(例如,苄基);及烷醇胺。
熟悉技藝人士當明瞭氨及氫氧化銨於水溶液中係相同物種。
如本文所定義之「硼酸鹽」包括單硼酸鹽、二硼酸鹽、多硼酸鹽、三硼酸鹽、四硼酸鹽、五硼酸鹽及六硼酸鹽。針對本揭示內容之目的,過硼酸鹽(亦稱為過氧硼酸鹽,參見,Cotton及Wilkinson,Advanced Inorganic Chemistry
,第五版,1988)亦被視為「硼酸鹽」。
熟悉技藝人士當明瞭氮化鈦並非始終為化學計量。換言之,氮化鈦可為富氮或貧氮。因此,氮化鈦在文中將表示為TiNx
。雖然在通篇申請案中未揭示,但針對文中所述之本發明之目的,氮化鈦矽、氮化鉭及氮化鉭矽皆可與氮化鈦互換。
如本文所使用之「約」係意指相當於所述值之±5%。
如本文所使用之「適用」於自其上具有殘留物之微電子裝置清潔該殘留物係相當於自微電子裝置至少部分移除該殘留物。較佳自微電子裝置移除至少約90重量%的一或多種待移除材料,更佳移除至少95重量%的一或多種材料,及最佳移除至少99重量%的一或多種待移除材料。與氮化鈦及低k介電材料之「相容性」係定義為自微電子裝置移除不多於5重量%,更佳不多於3重量%,及最佳不多於1重量%之氮化鈦及低k介電質。
「實質上不含」在本文係定義為小於2重量%,較佳小於1重量%,更佳小於0.5重量%,及最佳小於0.1重量%。
本發明之組成物可以如更完整說明於下文之相當多樣的特定調配物具體實施。
在所有此等組成物中,當參照包括零下限之重量百分比範圍論述組成物之特定組分時,當明瞭在組成物之各種特定具體例中可存在或不存在此等組分,且在存在此等組分之情況中,其可以基於其中使用此等組分之組成物之總重量計低至0.001重量百分比之濃度存在。
本發明人發現一種可自其上具有殘留物、顆粒及有機及金屬離子污染物之微電子裝置之表面適當地移除該等物質,同時可與氮化鈦層及低k介電材料相容的清潔組成物。
在第一態樣中,文中所述之清潔組成物係SC-1之變型,且其適用於自其上具有殘留物、顆粒、及有機及金屬離子污染物之微電子裝置之表面將其等移除。該等清潔組成物有利地與氮化鈦層及低k介電材料相容。在一具體例中,清潔組成物包含至少一種胺、至少一種氧化劑、水、及至少一種硼酸鹽物種。在另一具體例中,清潔組成物包含至少一種胺、過氧化氫、水、及至少一種硼酸鹽物種。在又另一具體例中,清潔組成物包含氨、至少一種氧化劑、水、及至少一種硼酸鹽物種。在又另一具體例中,清潔組成物包含氨、過氧化氫、水、及至少一種硼酸鹽物種。
在寬廣實務中,清潔組成物可包含下列成分,由其所組成,或基本上由其所組成:(i)至少一種胺、至少一種氧化劑、水、及至少一種硼酸鹽物種;(ii)至少一種胺、過氧化氫、水、及至少一種硼酸鹽物種;(iii)氨、至少一種氧化劑、水、及至少一種硼酸鹽物種;或(iv)氨、過氧化氫、水、及至少一種硼酸鹽物種。
包含水係充作溶劑及促進殘留物溶解。水較佳經去離子。
在一較佳具體例中,清潔組成物實質上不含具有醯胺肟官能基之化合物。在另一較佳具體例中,清潔組成物在與待清潔基板接觸之前實質上不含研磨劑材料。在又另一較佳具體例中,清潔組成物實質上不含諸如N-甲基吡咯啶酮之有機溶劑。此外,本發明之組成物應不可聚合形成抗蝕劑或其他聚合材料。應明瞭組成物在與待清潔基板、有機溶劑、及其組合接觸之前可實質上不含具有醯胺肟官能基之化合物、研磨劑材料之任何組合。
標準清潔1(SC-1)典型上包含不同比例之氨、過氧化氫及水。舉例來說,習知之SC-1溶液包含1份29重量% NH3
:1份30重量% H2
O2
:5份水。針對本發明之目的,SC-1溶液可替代氨或在氨之外再包含胺,且該溶液可替代過氧化氫或在過氧化氫之外再包含氧化劑。此外,胺或氨對氧化劑或H2
O2
之份數比例可在約10:1至約1:10之範圍內,而胺或氨對水之份數比例可在約1:10至約1:100之範圍內。至少一種硼酸鹽化合物之添加量係在約0.01重量%至約10重量%,較佳約0.5重量%至約5重量%,及最佳約1重量%至約4重量%之範圍內。
水性清潔組成物之pH範圍係約8至約13,較佳約9至約12,再更佳約9至約11。
胺可包含直鏈或分支鏈C1
-C20
烷基胺、經取代或未經取代之C6
-C10
芳基胺、二醇胺、烷醇胺、及胺-N-氧化物,包括,但不限於:吡啶;2-乙基吡啶;2-甲氧基吡啶及其衍生物諸如3-甲氧基吡啶;2-甲吡啶;二甲基吡啶;哌啶;哌;三乙胺;三乙醇胺;胺乙基乙醇胺;膽鹼;N-甲基胺基乙醇;胺基乙氧乙醇;二甲胺基乙氧乙醇;二乙醇胺;N-甲基二乙醇胺;乙胺;甲胺;異丁胺;苯甲胺;第三丁胺;三丁胺;二丙胺;二甲胺;二甘醇胺;單乙醇胺;吡咯;異唑;1,2,4-三唑;聯吡啶;嘧啶;吡;嗒;喹啉;異喹啉;吲哚;咪唑;N-甲基啉-N-氧化物(NMMO);三甲胺-N-氧化物;三乙胺-N-氧化物;吡啶-N-氧化物;N-乙基啉-N-氧化物;N-甲基吡咯啶-N-氧化物;N-乙基吡咯啶-N-氧化物;1-甲基咪唑;二異丙胺;二異丁胺;二甲胺;乙胺;乙基胺;乙二胺;1-己胺;1,6-己二胺;苯胺;苯胺衍生物;多胺;及其組合。替代性地,或除此之外,胺可為具有通式R1
R2
R3
R4
NOH之氫氧化烷基銨化合物,其中R1
、R2
、R3
及R4
係彼此相同或不同且係氫及C1
-C6
烷基(例如,甲基、乙基、丙基、丁基、戊基或己基);具有通式R1
R2
R3
R4
NOH之氫氧化烷基芳基銨化合物,其中R1
、R2
、R3
及R4
係彼此相同或不同且係選自由氫、C1
-C6
烷基(例如,甲基、乙基、丙基、丁基、戊基或己基)及經取代或未經取代之C6
-C10
芳基(例如,苄基)所組成之群;或其組合,包括,但不限於,氫氧化苄基三甲銨、氫氧化苄基三乙銨、氫氧化苄基三丁銨、氫氧化二甲基二乙銨、氫氧化四甲銨、氫氧化四乙銨、氫氧化四丙銨、氫氧化四丁銨、氫氧化銨、及其組合。該胺化合物較佳包含氫氧化銨(氨)。
此處涵蓋的氧化劑包括,但不限於,過氧化氫(H2
O2
)、FeCl3
(水合及未水合)、發氧方(oxone)(2KHSO5
‧KHSO4
‧K2
SO4
)、臭氧化水、過氧單硫酸銨、亞氯酸銨(NH4
ClO2
)、亞溴酸銨(NH4
ClO2
)、氯酸銨(NH4
ClO3
)、溴酸銨(NH4
BrO3
)、碘酸銨(NH4
IO3
)、過硼酸銨(NH4
BO3
)、過氯酸銨(NH4
ClO4
)、過溴酸銨(NH4
BrO4
)、過碘酸銨(NH4
IO3
)、過硫酸銨((NH4
)2
S2
O8
)、次氯酸銨(NH4
ClO)、次溴酸銨(NH4
BrO)、過硫酸鈉(Na2
S2
O8
)、次氯酸鈉(NaClO)、次溴酸鈉(NaBrO)、碘酸鉀(KIO3
)、溴酸鉀(KBrO3
)、過錳酸鉀(KMnO4
)、過硫酸鉀、硝酸(HNO3
)、過硫酸鉀(K2
S2
O8
)、次氯酸鉀(KClO)、次溴酸鉀(KBrO)、亞氯酸四甲銨((N(CH3
)4
)ClO2
)、亞溴酸四甲銨((N(CH3
)4
)BrO2
)、氯酸四甲銨((N(CH3
)4
)ClO3
)、溴酸四甲銨((N(CH3
)4
)BrO3
)、碘酸四甲銨((N(CH3
)4
)IO3
)、過硼酸四銨((N(CH3
)4
)BO3
)、過氯酸四甲銨((N(CH3
)4
)ClO4
)、過溴酸四甲銨((N(CH3
)4
)BrO4
)、過碘酸四甲銨((N(CH3
)4
)IO4
)、過硫酸四甲銨((N(CH3
)4
)S2
O8
)、過氧單硫酸四丁銨、過氧單硫酸;鐵化合物,包括氯化物及/或硝酸鹽、鐵尿素過氧化氫((CO(NH2
)2
)H2
O2
)、過乙酸(CH3
(CO)OOH)、過酞酸、芬頓試劑(Fenton’s reagent)(過氧化物+金屬催化劑(例如,Fe、Cu、Mn、或Co)+視需要之甘胺酸)、及其組合。該氧化劑可於製造商處,在將組成物引入至微電子裝置之前,或者於裝置晶圓處(即於原位)引入至組成物。應明瞭當氧化劑包含過硼酸鹽時,過硼酸鹽可作為硼酸鹽物種及氧化劑添加。該氧化劑較佳包括過氧化氫。
此處涵蓋的硼酸鹽化合物包括,但不限於,單硼酸根、二硼酸根、三硼酸根、四硼酸根、五硼酸根或六硼酸根離子之鈉、鉀或銨鹽。陽離子較佳不含金屬離子(即,銨)。在另一具體例中,硼酸鹽化合物可包括過硼酸鹽物種。此外,涵蓋無需添加硼酸鹽化合物本身,而係可於原位產生硼酸鹽化合物。
在另一具體例中,文中所述之清潔組成物進一步包含使用該等組成物移除之殘留物、顆粒及/或有機及金屬離子污染物。該殘留物、顆粒及/或有機及金屬離子污染物材料可溶解及/或懸浮於清潔組成物中。
除了液體溶液外,此處亦涵蓋可將文中所述之組成物調配成為泡沫、霧劑、次臨界或超臨界流體(即,其中該溶劑係CO2
等,而非水)。
有利地,文中所述之清潔組成物自微電子裝置之頂表面、側壁、及通道及線路相對於存在於裝置上之氮化鈦層及低k介電材料有效及選擇性地移除殘留物。此外,無論係先蝕刻溝槽或通道,皆可使用該等組成物。
當明瞭在一般的清潔應用中,一般實務係製造高度濃縮形式以在極端稀釋下使用。舉例來說,可以更為濃縮的形式製造清潔組成物(包含至少約20重量%水以供溶解用),其後再在製造商處、在使用前、及/或在工廠在使用期間用額外溶劑(例如,水)稀釋。稀釋比可在約0.1份稀釋劑:1份移除組成物濃縮物至約10份稀釋劑:1份移除組成物濃縮物之範圍內。在另一具體例中,在製造商處、在使用前及/或在工廠在使用期間將氧化劑與其他組分組合。當明瞭在稀釋或組合組分後,移除組成物之許多組分的重量百分比比率將維持不變。
文中所述之組成物係經由簡單地添加個別成分及混合至均勻狀態而容易地調配得。此外,可輕易地將組成物調配為單一包裝調配物或在使用點處混合的多份調配物,較佳為多份調配物。可將多份調配物之個別份於工具處或於工具上游之儲槽中混合。個別成分的濃度可在組成物的特定倍數內寬廣地改變,即更稀或更濃,且當明瞭文中所述之組成物可變化及替代地包含與本文之揭示內容一致之成分的任何組合,由其所組成,或基本上由其所組成。舉例來說,水溶液中之該至少一種胺及至少一種硼酸鹽化合物可構成多份調配物之一份,以於工廠或使用點處與該至少一種氧化劑組合。
因此,另一態樣係關於一種套組,其包括存於一或多個容器中之一或多種適於形成本文所述之組成物的組分。套組較佳包括用於在工廠或使用點處與至少一種氧化劑及視需要之水組合之存於一或多個容器中之至少一種胺及至少一種硼酸鹽化合物及視需要之水的較佳組合。套組之容器必需適於儲存及運送該清潔組成物組分,例如,NOWPak容器(Advanced Technology Materials,Inc.,Danbury,Conn.,USA)。容納移除組成物之組分的一或多個容器較佳包括用於使該一或多個容器中之組分流體相通,以進行摻混及配送的構件。舉例來說,參照NOWPak容器,可對該一或多個容器中之襯裡的外側施加氣體壓力,以導致襯裡之至少一部分的內容物排出,且因此可流體相通而進行摻混及配送。或者,可對習知之可加壓容器的頂部空間施加氣體壓力,或可使用泵於達成流體相通。此外,系統較佳包括用於將經摻混之清潔組成物配送至製程工具的配送口。
較佳使用實質上化學惰性、不含雜質、可撓性及彈性的聚合薄膜材料,諸如高密度聚乙烯,於製造該一或多個容器的襯裡。理想的襯裡材料不需要共擠塑或障壁層以進行加工,且不含任何會不利影響待置於襯裡中之組分之純度需求的顏料、UV抑制劑、或加工劑。理想襯裡材料的清單包括含純粹(無添加劑)聚乙烯、純粹聚四氟乙烯(PTFE)、聚丙烯、聚胺基甲酸酯、聚二氯亞乙烯、聚氯乙烯、聚縮醛、聚苯乙烯、聚丙烯腈、聚丁烯等等的薄膜。此等襯裡材料的較佳厚度係在約5密爾(mil)(0.005英吋)至約30密爾(0.030英吋)之範圍內,例如,20密爾(0.020英吋)之厚度。
關於套組之容器,將以下專利及專利申請案之揭示內容的個別全體併入本文為參考資料:美國專利第7,188,644號,標題「使超純液體中之顆粒產生減至最小的裝置及方法(APPARATUS AND METHOD FOR MINIMIZING THE GENERATION OF PARTICLES IN ULTRAPURE LIQUIDS)」;美國專利第6,698,619號,標題「可回收及再利用的桶中袋流體儲存及配送容器系統(RETURNABLE AND REUSABLE,BAG-IN-DRUM FLUID STORAGE AND DISPENSING CONTAINER SYSTEM)」;及2007年5月9日以John E.Q. Hughes之名義提出申請之美國專利申請案第60/916,966號,標題「材料摻混及分佈用的系統及方法(SYSTEMS AND METHODS FOR MATERIAL BLENDING AND DISTRIBUTION)」,及2008年5月9日以Advanced Technology Materials,Inc.之名義提出申請之PCT/US08/63276,標題「材料摻混及分佈用的系統及方法(SYSTEMS AND METHODS FOR MATERIAL BLENDING AND DISTRIBUTION)」。
當應用至微電子製造操作時,清潔組成物可有效用於自微電子裝置之表面清潔殘留物,及可在施用經調配用於自裝置表面移除另類材料之其他組成物之前或之後應用於該表面。
在清潔應用中,組成物可以任何適當方式施加至待清潔之裝置,例如,經由將組成物噴塗於待清潔裝置之表面上,經由將待清潔裝置浸泡於靜態或動態體積之組成物中,經由使待清潔裝置與其上吸收有組成物之另一材料(例如,墊、或纖維吸收性塗布器元件)接觸,或藉由任何其他藉以使組成物與待清潔裝置進行移除接觸之適當手段、方式或技術。此外,此處涵蓋批式或單一晶圓加工。
在使用組成物於自其上具有殘留物、顆粒及/或有機及/或金屬離子污染物之微電子裝置移除該等物質時,典型上使組成物與裝置在約20℃至約70℃,較佳約20℃至約50℃,及最佳約20℃至約40℃範圍內之溫度下靜態或動態接觸約30秒至約120分鐘,較佳約1分鐘至60分鐘之時間。較佳為靜態接觸。此等接觸時間及溫度係為說明性,可採用任何其他可有效地自裝置至少部分地移除殘留物、顆粒及/或有機及/或金屬離子污染物的適當時間及溫度條件。自微電子裝置「至少部分移除」殘留物、顆粒及/或有機及/或金屬離子污染物係相當於移除至少90%的殘留物、顆粒及/或有機及/或金屬離子污染物,較佳移除至少95%。最佳使用文中所述之組成物移除至少99%的該殘留物、顆粒及/或有機及/或金屬離子污染物。
於達成期望的移除作用後,可輕易地將組成物自其先前經施用的裝置移除(例如,經由沖洗、洗滌、或其他移除步驟),此可能係在本文所述組成物之指定最終應用中所需且有效的。舉例來說,裝置可用包含去離子水之沖洗溶液沖洗及/或經乾燥(例如,旋轉乾燥、N2
、蒸氣乾燥等)。
另一態樣係關於根據文中所述之方法製得之改良的微電子裝置,及含有該等微電子裝置之產品。
又另一態樣係關於製造包含微電子裝置之物件的方法,該方法包括使微電子裝置與組成物接觸足夠的時間,以自其上具有殘留物、顆粒及/或有機及/或金屬離子污染物之微電子裝置清潔該殘留物,及將該微電子裝置併入至該物件中,其中該組成物包含至少一種胺、至少一種氧化劑、至少一種硼酸鹽化合物、及水。
又再一態樣係關於製造包含微電子裝置之物件的方法,該方法包括使微電子裝置與組成物接觸足夠的時間,以自其上具有殘留物、顆粒及/或有機及/或金屬離子污染物之微電子裝置清潔該等材料,及將該微電子裝置併入至該物件中,其中該組成物包含至少一種胺、至少一種氧化劑、至少一種硼酸鹽化合物、及水。
在又另一態樣中,描述一種製造物件,該物件包括微電子裝置基板、殘留材料、及清潔組成物,其中該清潔組成物可為文中所述之任何組成物,及其中該殘留材料係選自由殘留物、顆粒、有機污染物、金屬離子污染物、及其組合所組成之群。
本發明之特徵及優點由以下論述之說明性實施例作更完整展示。
製備包含1:1:40(30% H2
O2
:30% NH4
OH:水)之對照SC-1調配物。該SC-1溶液具有10.51之pH。製備將0.5重量%、1重量%及4重量%之四水合四硼酸銨(ATB,(NH4
)2
B4
O7
‧4H2
O)添加至該SC-1調配物之調配物,以致藉由進行水之1:1質量置換而使H2
O2
:NH4
OH之比保持相同。反應條件包括將氮化鈦樣品(具有於約2000埃矽基板上之SiO2
上之130-150埃TiN之毯覆式堆疊的試樣)於各調配物中在約24℃之溫度下靜態浸泡0.5、1、2及10分鐘,於溢流去離子水中沖洗120秒,及進行分析以測定於各調配物存在下的TiN腐蝕程度。
結果說明於圖1。可見當將1% ATB與SC-1混合時,在10分鐘時的TiN損耗減少為約66%。此外,在4% ATB下,TiN損耗似乎針對短暴露時間經消除。
包含4% ATB之SC-1組成物具有9.71之pH。製造包含SC-1及4% ATB之新調配物及利用NH4
OH將pH調整至10.42。該新調配物具有約1:3.75:40之H2
O2
:NH4
OH:4% ATB水溶液之最終比。反應條件包括將樣品(2000-4000埃PETEOS於矽基板上)於三種調配物中在25℃下靜態浸泡10、20、30及60分鐘,接著沖洗60秒,及進行分析以測定PETEOS移除程度。此外,反應條件包括將氮化鈦樣品於三種調配物中在約20℃之溫度下靜態浸泡1及10分鐘,於溢流去離子水中沖洗60秒,及進行分析以測定TiN腐蝕程度。該三種調配物為SC-1調配物、SC-1+4% ATB調配物(pH 9.71)、及經調整至pH 10.42之SC-1+4% ATB調配物。
如圖2所示,經測定經調整至pH 10.42之包含4% ATB之調配物進一步抑制TiN腐蝕,藉此當分別將清潔組成物之pH自9.71調整至10.42時,TiNx
損耗自37.8減至24.4埃/分鐘。關於PETEOS損耗,在浸泡於SC-1中60分鐘之過程內損耗約6埃之PETEOS。在有或無pH調整下添加4% ATB在相同時間內使PETEOS損耗降至約2埃。
雖然本發明已參照說明具體例及特徵以不同方式揭示於文中,但當明瞭前文所述之具體例及特徵並非要限制本發明,且熟悉技藝人士當可基於文中之揭示內容明白其他的變化、修改及其他具體例。因此,本發明係應廣泛解釋為涵蓋在後文所述之申請專利範圍之精神及範疇內的所有此等變化、修改及另類具體例。
圖1說明具有不同量四水合四硼酸銨之清潔組成物中的氮化鈦損耗。
圖2說明具有不同pH值之清潔組成物中的氮化鈦損耗。
Claims (20)
- 一種清潔組成物,其中,該清潔組成物包含至少一種胺、至少一種氧化劑、水、及至少一種硼酸鹽物種。
- 如申請專利範圍第1項之組成物,其包含至少一種胺、過氧化氫、水、及至少一種硼酸鹽物種。
- 如申請專利範圍第1項之組成物,其包含氨、過氧化氫、水、及至少一種硼酸鹽物種。
- 如申請專利範圍第1或2項之組成物,其中,該至少一種胺包含至少一種選自由下列所組成之群之物種:氨;吡啶;2-乙基吡啶;2-甲氧基吡啶;3-甲氧基吡啶;2-甲吡啶;二甲基吡啶;哌啶;哌;三乙胺;三乙醇胺;胺乙基乙醇胺;膽鹼;N-甲基胺基乙醇;胺基乙氧乙醇;二甲胺基乙氧乙醇;二乙醇胺;N-甲基二乙醇胺;乙胺;甲胺;異丁胺;苯甲胺;第三丁胺;三丁胺;二丙胺;二甲胺;二甘醇胺;單乙醇胺;吡咯;異唑;1,2,4-三唑;聯吡啶;嘧啶;吡;嗒;喹啉;異喹啉;吲哚;咪唑;N-甲基啉-N-氧化物(NMMO);三甲胺-N-氧化物;三乙胺-N-氧化物;吡啶-N-氧化物;N-乙基啉-N-氧化物;N-甲基吡咯啶-N-氧化物;N-乙基吡咯啶-N-氧化物;1-甲基咪唑;二異丙胺;二異丁胺;二甲胺;乙胺;乙基胺;乙二胺;1-己胺;1,6-己二胺;苯胺;苯胺衍生物;多胺;氫氧化苄基三甲銨;氫氧化苄基三乙銨;氫氧化苄基三丁銨;氫氧化二甲基二乙銨;氫氧化四甲銨;氫氧化四乙銨;氫氧化四丙銨;氫氧化四丁銨;氫氧化銨;及其組合。
- 如申請專利範圍第1或2項之組成物,其中,該至少一種胺包含氨。
- 如申請專利範圍第1項之組成物,其中,該至少一種氧化劑包含選自由下列所組成之群之物種:過氧化氫(H2 O2 )、FeCl3 (水合及未水合)、發氧方(oxone)(2KHSO5 ‧KHSO4 ‧K2 SO4 )、臭氧化水、過氧單硫酸銨、亞氯酸銨(NH4 ClO2 )、亞溴酸銨(NH4 ClO2 )、氯酸銨(NH4 ClO3 )、溴酸銨(NH4 BrO3 )、碘酸銨(NH4 IO3 )、過硼酸銨(NH4 BO3 )、過氯酸銨(NH4 ClO4 )、過溴酸銨(NH4 BrO4 )、過碘酸銨(NH4 IO3 )、過硫酸銨((NH4 )2 S2 O8 )、次氯酸銨(NH4 ClO)、次溴酸銨(NH4 BrO)、過硫酸鈉(Na2 S2 O8 )、次氯酸鈉(NaClO)、次溴酸鈉(NaBrO)、碘酸鉀(KIO3 )、溴酸鉀(KBrO3 )、過錳酸鉀(KMnO4 )、過硫酸鉀、硝酸(HNO3 )、過硫酸鉀(K2 S2 O8 )、次氯酸鉀(KClO)、次溴酸鉀(KBrO)、亞氯酸四甲銨((N(CH3 )4 )ClO2 )、亞溴酸四甲銨((N(CH3 )4 )BrO2 )、氯酸四甲銨((N(CH3 )4 )ClO3 )、溴酸四甲銨((N(CH3 )4 )BrO3 )、碘酸四甲銨((N(CH3 )4 )IO3 )、過硼酸四甲銨((N(CH3 )4 )BO3 )、過氯酸四甲銨((N(CH3 )4 )ClO4 )、過溴酸四甲銨((N(CH3 )4 )BrO4 )、過碘酸四甲銨((N(CH3 )4 )IO4 )、過硫酸四甲銨((N(CH3 )4 )S2 O8 )、過氧單硫酸四丁銨、過氧單硫酸、鐵化合物包括氯化物及/或硝酸鹽、尿素過氧化氫((CO(NH2 )2 )H2 O2 )、過乙酸(CH3 (CO)OOH)、過酞酸、及其組合。
- 如申請專利範圍第1項之組成物,其中,該至少一種氧化劑包含過氧化氫。
- 如申請專利範圍第1或2項之組成物,其中,該至少一種硼酸鹽化合物包含單硼酸根、二硼酸根、三硼酸根、四硼酸根、五硼酸根、六硼酸根、或過硼酸根陰離子。
- 如申請專利範圍第1或2項之組成物,其中,該至少一種硼酸鹽化合物包含銨陽離子。
- 如申請專利範圍第1或2項之組成物,其中,該至少一種硼酸鹽化合物包含四水合四硼酸銨。
- 如申請專利範圍第1或2項之組成物,其中,該至少一種硼酸鹽化合物係於原位產生。
- 如申請專利範圍第1或2項之組成物,其中,pH係於約8至約13之範圍內。
- 如申請專利範圍第1或2項之組成物,其中,pH係於9至11之範圍內。
- 如申請專利範圍第1或2項之組成物,其中,該組成物進一步包括選自由灰化後殘留物、蝕刻後殘留物、CMP後殘留物、顆粒、有機污染物、金屬離子污染物、及其組合所組成之群之殘留物。
- 如申請專利範圍第1或2項之組成物,其包含氨、過氧化氫、四水合四硼酸銨、及水。
- 一種自其上具有材料之微電子裝置移除該材料的方法,該方法包括使該微電子裝置與清潔組成物接觸足夠的時間,以自該微電子裝置至少部分移除該材料,其中,該清潔組成物包含至少一種胺、至少一種氧化劑、水、及至少一種硼酸鹽物種。
- 如申請專利範圍第16項之方法,其中,該材料包括選自由灰化後殘留物、蝕刻後殘留物、CMP後殘留物、顆粒、有機污染物、金屬離子污染物、及其組合所組成之群之殘留物。
- 如申請專利範圍第16或17項之方法,其中,該清潔組成物自該微電子裝置相對於氮化鈦及低k介電材料選擇性地移除該材料。
- 如申請專利範圍第16或17項之方法,其中,該接觸包括選自由下列所組成之群之條件:約0.5分鐘至約120分鐘之時間;約20℃至約70℃範圍內之溫度;及其組合。
- 如申請專利範圍第16或17項之方法,其進一步包括在與該組成物接觸後用去離子水沖洗該微電子裝置。
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US20130303420A1 (en) | 2013-11-14 |
US9416338B2 (en) | 2016-08-16 |
WO2012051380A3 (en) | 2012-07-12 |
KR20130129369A (ko) | 2013-11-28 |
KR101891363B1 (ko) | 2018-08-24 |
TW201221640A (en) | 2012-06-01 |
WO2012051380A2 (en) | 2012-04-19 |
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