SG100769A1 - Semiconductor device and method of manufacturing the same - Google Patents

Semiconductor device and method of manufacturing the same

Info

Publication number
SG100769A1
SG100769A1 SG200107179A SG200107179A SG100769A1 SG 100769 A1 SG100769 A1 SG 100769A1 SG 200107179 A SG200107179 A SG 200107179A SG 200107179 A SG200107179 A SG 200107179A SG 100769 A1 SG100769 A1 SG 100769A1
Authority
SG
Singapore
Prior art keywords
manufacturing
same
semiconductor device
semiconductor
Prior art date
Application number
SG200107179A
Other languages
English (en)
Inventor
Yamazaki Shunpei
Koyama Jun
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Publication of SG100769A1 publication Critical patent/SG100769A1/en

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1292—Multistep manufacturing methods using liquid deposition, e.g. printing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H01L29/78627—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile with a significant overlap between the lightly doped drain and the gate electrode, e.g. GOLDD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
SG200107179A 2000-11-28 2001-11-19 Semiconductor device and method of manufacturing the same SG100769A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000361971A JP4954366B2 (ja) 2000-11-28 2000-11-28 半導体装置の作製方法

Publications (1)

Publication Number Publication Date
SG100769A1 true SG100769A1 (en) 2003-12-26

Family

ID=18833323

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200107179A SG100769A1 (en) 2000-11-28 2001-11-19 Semiconductor device and method of manufacturing the same

Country Status (7)

Country Link
US (3) US6737306B2 (zh)
JP (1) JP4954366B2 (zh)
KR (2) KR100858829B1 (zh)
CN (3) CN100517037C (zh)
MY (1) MY141568A (zh)
SG (1) SG100769A1 (zh)
TW (1) TW541704B (zh)

Families Citing this family (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6580475B2 (en) * 2000-04-27 2003-06-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
TW525216B (en) * 2000-12-11 2003-03-21 Semiconductor Energy Lab Semiconductor device, and manufacturing method thereof
SG111923A1 (en) * 2000-12-21 2005-06-29 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
SG118117A1 (en) 2001-02-28 2006-01-27 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
JP2003045874A (ja) 2001-07-27 2003-02-14 Semiconductor Energy Lab Co Ltd 金属配線およびその作製方法、並びに金属配線基板およびその作製方法
JP4969001B2 (ja) * 2001-09-20 2012-07-04 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
JP3961310B2 (ja) * 2002-02-21 2007-08-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7579771B2 (en) 2002-04-23 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
US7786496B2 (en) * 2002-04-24 2010-08-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing same
JP2003317971A (ja) 2002-04-26 2003-11-07 Semiconductor Energy Lab Co Ltd 発光装置およびその作製方法
US7897979B2 (en) 2002-06-07 2011-03-01 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
JP4216008B2 (ja) * 2002-06-27 2009-01-28 株式会社半導体エネルギー研究所 発光装置およびその作製方法、ならびに前記発光装置を有するビデオカメラ、デジタルカメラ、ゴーグル型ディスプレイ、カーナビゲーション、パーソナルコンピュータ、ｄｖｄプレーヤー、電子遊技機器、または携帯情報端末
CN100578573C (zh) 2002-09-20 2010-01-06 株式会社半导体能源研究所 显示器件及其制造方法
US7094684B2 (en) * 2002-09-20 2006-08-22 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
KR100915233B1 (ko) * 2002-11-05 2009-09-02 삼성전자주식회사 박막 트랜지스터 어레이 기판
JP4373086B2 (ja) 2002-12-27 2009-11-25 株式会社半導体エネルギー研究所 発光装置
US7220627B2 (en) * 2003-04-21 2007-05-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device where the scanning direction changes between regions during crystallization and process
US7476629B2 (en) * 2003-04-21 2009-01-13 Semiconductor Energy Laboratory Co., Ltd. Beam irradiation apparatus, beam irradiation method, and method for manufacturing thin film transistor
US7238963B2 (en) * 2003-04-28 2007-07-03 Tpo Displays Corp. Self-aligned LDD thin-film transistor and method of fabricating the same
US20050074914A1 (en) * 2003-10-06 2005-04-07 Toppoly Optoelectronics Corp. Semiconductor device and method of fabrication the same
KR100560470B1 (ko) * 2003-11-24 2006-03-13 삼성에스디아이 주식회사 다이오드 접속된 트랜지스터의 제조 방법 및 이를 이용한화상 표시 장치
JP2005164854A (ja) * 2003-12-01 2005-06-23 Nec Lcd Technologies Ltd 液晶表示装置
JP4722391B2 (ja) * 2003-12-04 2011-07-13 株式会社半導体エネルギー研究所 薄膜トランジスタの製造方法
JP4447304B2 (ja) 2003-12-22 2010-04-07 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
JP2005259848A (ja) * 2004-03-10 2005-09-22 Toshiba Corp 半導体装置及びその製造方法
US7374983B2 (en) * 2004-04-08 2008-05-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20050258488A1 (en) * 2004-04-27 2005-11-24 Toppoly Optoelectronics Corp. Serially connected thin film transistors and fabrication methods thereof
US7521368B2 (en) * 2004-05-07 2009-04-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7554260B2 (en) 2004-07-09 2009-06-30 Semiconductor Energy Laboratory Co., Ltd. Display device provided with a conductive film connection between a wiring component and a metal electrode film
CN100459157C (zh) * 2004-08-26 2009-02-04 友达光电股份有限公司 用于平面显示装置的薄膜晶体管结构及其制造方法
US7374984B2 (en) * 2004-10-29 2008-05-20 Randy Hoffman Method of forming a thin film component
TWI382455B (zh) * 2004-11-04 2013-01-11 Semiconductor Energy Lab 半導體裝置和其製造方法
US7948171B2 (en) * 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197088A1 (en) * 2005-03-07 2006-09-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
TWI336951B (en) * 2005-05-19 2011-02-01 Au Optronics Corp Method of forming thin film transistor
US7579220B2 (en) 2005-05-20 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device manufacturing method
KR101151799B1 (ko) * 2005-11-09 2012-06-01 엘지디스플레이 주식회사 액정표시장치용 어레이기판과 그 제조방법
JP4680850B2 (ja) 2005-11-16 2011-05-11 三星モバイルディスプレイ株式會社 薄膜トランジスタ及びその製造方法
KR100729055B1 (ko) * 2005-11-29 2007-06-14 삼성에스디아이 주식회사 박막 트랜지스터 및 그 제조 방법
KR100722112B1 (ko) * 2005-12-09 2007-05-25 삼성에스디아이 주식회사 박막 트랜지스터 및 그의 제조방법
KR100729054B1 (ko) * 2005-11-16 2007-06-14 삼성에스디아이 주식회사 박막 트랜지스터 및 그 제조 방법
KR101446226B1 (ko) * 2006-11-27 2014-10-01 엘지디스플레이 주식회사 플렉서블 표시장치 및 그 제조 방법
KR100867921B1 (ko) * 2006-11-29 2008-11-10 삼성에스디아이 주식회사 박막 트랜지스터의 제조방법
JP5352081B2 (ja) 2006-12-20 2013-11-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8319295B2 (en) * 2007-01-10 2012-11-27 Imec Use of F-based gate etch to passivate the high-k/metal gate stack for deep submicron transistor technologies
US9041202B2 (en) 2008-05-16 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
CN101714546B (zh) 2008-10-03 2014-05-14 株式会社半导体能源研究所 显示装置及其制造方法
KR20180137606A (ko) 2008-10-24 2018-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
TWI525603B (zh) 2009-01-16 2016-03-11 半導體能源研究所股份有限公司 液晶顯示裝置及其電子裝置
US8461582B2 (en) 2009-03-05 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20100224878A1 (en) * 2009-03-05 2010-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
DE102009038589B4 (de) * 2009-08-26 2014-11-20 Heraeus Materials Technology Gmbh & Co. Kg TFT-Struktur mit Cu-Elektroden
CN103984176B (zh) 2009-10-09 2016-01-20 株式会社半导体能源研究所 液晶显示装置及包括该液晶显示装置的电子设备
KR101759504B1 (ko) 2009-10-09 2017-07-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 표시 장치 및 이를 포함한 전자 기기
KR102378013B1 (ko) * 2009-11-06 2022-03-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR101844972B1 (ko) 2009-11-27 2018-04-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작방법
EP2426720A1 (en) * 2010-09-03 2012-03-07 Applied Materials, Inc. Staggered thin film transistor and method of forming the same
JP5825812B2 (ja) * 2011-03-24 2015-12-02 株式会社Ｊｏｌｅｄ 表示装置の製造方法
TWI651839B (zh) * 2013-02-27 2019-02-21 半導體能源研究所股份有限公司 半導體裝置、驅動電路及顯示裝置
CN105702744B (zh) * 2016-04-05 2020-07-28 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、阵列基板、显示装置
CN105914202B (zh) * 2016-06-13 2018-11-13 上海珏芯光电科技有限公司 显示驱动背板、显示器以及制造方法
JP6847624B2 (ja) * 2016-10-14 2021-03-24 株式会社ジャパンディスプレイ 表示装置
CN106773338B (zh) * 2017-01-16 2020-02-18 京东方科技集团股份有限公司 一种液晶微波移相器
KR101977132B1 (ko) * 2018-12-28 2019-05-10 인하대학교 산학협력단 구리 박막의 건식 식각방법
CN111403488B (zh) * 2020-03-31 2024-03-29 合肥鑫晟光电科技有限公司 薄膜晶体管及其制备方法、显示用基板及显示装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5616935A (en) * 1994-02-08 1997-04-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit having N-channel and P-channel transistors
US5719065A (en) * 1993-10-01 1998-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with removable spacers
EP1045447A2 (en) * 1999-04-15 2000-10-18 Sel Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and electronic equipment

Family Cites Families (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4394182A (en) * 1981-10-14 1983-07-19 Rockwell International Corporation Microelectronic shadow masking process for reducing punchthrough
JPS5888781A (ja) * 1981-11-20 1983-05-26 三菱電機株式会社 マトリクス型液晶表示装置
JPH01205569A (ja) 1988-02-12 1989-08-17 Seiko Epson Corp Ｍｏｓ型半導体装置の製造方法
GB8909011D0 (en) 1989-04-20 1989-06-07 Friend Richard H Electroluminescent devices
US5946561A (en) * 1991-03-18 1999-08-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
JPH0575033A (ja) 1991-09-12 1993-03-26 Hitachi Ltd 半導体集積回路装置およびその製造方法
JPH06148685A (ja) 1992-11-13 1994-05-27 Toshiba Corp 液晶表示装置
JP3587537B2 (ja) 1992-12-09 2004-11-10 株式会社半導体エネルギー研究所 半導体装置
JP3210455B2 (ja) 1992-12-22 2001-09-17 川崎製鉄株式会社 半導体装置の製造方法
US5830787A (en) * 1993-03-18 1998-11-03 Lg Semicon Co., Ltd. Method for fabricating a thin film transistor
DE4417154C2 (de) 1993-05-20 1998-07-02 Gold Star Electronics Dünnfilmtransistor und Verfahren zu deren Herstellung
JP3168770B2 (ja) * 1993-06-03 2001-05-21 松下電器産業株式会社 偏光装置および該偏光装置を用いた投写型表示装置
TW264575B (zh) 1993-10-29 1995-12-01 Handotai Energy Kenkyusho Kk
US5923962A (en) 1993-10-29 1999-07-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
JP3431033B2 (ja) 1993-10-29 2003-07-28 株式会社半導体エネルギー研究所 半導体作製方法
JP3398453B2 (ja) 1994-02-24 2003-04-21 株式会社東芝 薄膜トランジスタの製造方法
JP2939865B2 (ja) * 1995-07-03 1999-08-25 カシオ計算機株式会社 薄膜半導体装置およびそれを用いた表示装置
JPH08274336A (ja) 1995-03-30 1996-10-18 Toshiba Corp 多結晶半導体薄膜トランジスタ及びその製造方法
JPH10198292A (ja) * 1996-12-30 1998-07-31 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US6433841B1 (en) * 1997-12-19 2002-08-13 Seiko Epson Corporation Electro-optical apparatus having faces holding electro-optical material in between flattened by using concave recess, manufacturing method thereof, and electronic device using same
JP4458563B2 (ja) 1998-03-31 2010-04-28 三菱電機株式会社 薄膜トランジスタの製造方法およびこれを用いた液晶表示装置の製造方法
JPH11345975A (ja) * 1998-06-02 1999-12-14 Matsushita Electric Ind Co Ltd 薄膜トランジスタ及びその製造方法
JP3592535B2 (ja) 1998-07-16 2004-11-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6617644B1 (en) * 1998-11-09 2003-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP4583529B2 (ja) 1998-11-09 2010-11-17 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP4641581B2 (ja) 1998-11-10 2011-03-02 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US7141821B1 (en) * 1998-11-10 2006-11-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an impurity gradient in the impurity regions and method of manufacture
JP3859915B2 (ja) 1998-11-16 2006-12-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6518594B1 (en) * 1998-11-16 2003-02-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor devices
JP4159712B2 (ja) 1998-11-17 2008-10-01 株式会社半導体エネルギー研究所 半導体装置、アクティブマトリクス型表示装置、液晶表示装置、エレクトロルミネッセンス表示装置、ビデオカメラ、デジタルカメラ、プロジェクタ、ゴーグル型ディスプレイ、カーナビゲーションシステム、パーソナルコンピュータ又は携帯型情報端末
US6909114B1 (en) * 1998-11-17 2005-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having LDD regions
US6501098B2 (en) * 1998-11-25 2002-12-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device
US6365917B1 (en) 1998-11-25 2002-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP3901893B2 (ja) 1998-11-25 2007-04-04 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US7235810B1 (en) * 1998-12-03 2007-06-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
JP4531175B2 (ja) * 1998-12-03 2010-08-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4641582B2 (ja) 1998-12-18 2011-03-02 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6469317B1 (en) * 1998-12-18 2002-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US6524895B2 (en) * 1998-12-25 2003-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
JP4869464B2 (ja) 1998-12-25 2012-02-08 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP4549475B2 (ja) * 1999-02-12 2010-09-22 株式会社半導体エネルギー研究所 半導体装置、電子機器、および半導体装置の作製方法
EP2284605A3 (en) * 1999-02-23 2017-10-18 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and fabrication method thereof
US6531713B1 (en) * 1999-03-19 2003-03-11 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and manufacturing method thereof
US6281552B1 (en) * 1999-03-23 2001-08-28 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having ldd regions
US6399988B1 (en) * 1999-03-26 2002-06-04 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor having lightly doped regions
EP1049167A3 (en) * 1999-04-30 2007-10-24 Sel Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP4801241B2 (ja) 1999-07-22 2011-10-26 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US6541294B1 (en) * 1999-07-22 2003-04-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP4869472B2 (ja) 1999-07-22 2012-02-08 株式会社半導体エネルギー研究所 半導体装置
TW480554B (en) * 1999-07-22 2002-03-21 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
JP3538084B2 (ja) * 1999-09-17 2004-06-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6646287B1 (en) * 1999-11-19 2003-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with tapered gate and insulating film
JP4801249B2 (ja) 1999-11-19 2011-10-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7023021B2 (en) * 2000-02-22 2006-04-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP5046452B2 (ja) 2000-10-26 2012-10-10 株式会社半導体エネルギー研究所 半導体装置の作製方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5719065A (en) * 1993-10-01 1998-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with removable spacers
US5616935A (en) * 1994-02-08 1997-04-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit having N-channel and P-channel transistors
EP1045447A2 (en) * 1999-04-15 2000-10-18 Sel Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and electronic equipment

Also Published As

Publication number Publication date
US20070102703A1 (en) 2007-05-10
US6737306B2 (en) 2004-05-18
US7161179B2 (en) 2007-01-09
US20040124418A1 (en) 2004-07-01
MY141568A (en) 2010-05-14
KR20070009498A (ko) 2007-01-18
US7745824B2 (en) 2010-06-29
TW541704B (en) 2003-07-11
CN1366340A (zh) 2002-08-28
JP4954366B2 (ja) 2012-06-13
CN100517037C (zh) 2009-07-22
JP2002164546A (ja) 2002-06-07
US20020063287A1 (en) 2002-05-30
CN1577851A (zh) 2005-02-09
KR20020041782A (ko) 2002-06-03
KR100842728B1 (ko) 2008-07-01
CN1554974A (zh) 2004-12-15
CN1554974B (zh) 2012-01-11
KR100858829B1 (ko) 2008-09-17
CN100397642C (zh) 2008-06-25

Similar Documents

Publication Publication Date Title
SG100769A1 (en) Semiconductor device and method of manufacturing the same
GB2359191B (en) Semiconductor device and method of manufacturing the same
SG118068A1 (en) Semiconductor device and manufacturing method thereof
SG112805A1 (en) Semiconductor device and manufacturing method thereof
IL156619A0 (en) Semiconductor device and its manufacturing method
SG121715A1 (en) Semiconductor device and method of manufacturing the same
SG96201A1 (en) Flip-chip type semiconductor device and method of manufacturing the same
GB2369243B (en) Semiconductor device and method of manufacture
SG118117A1 (en) Semiconductor device and manufacturing method thereof
SG100696A1 (en) Semiconductor device and method for manufacturing same
GB2387967B (en) Semiconductor device and method of manufacturing the same
AU2002217545A1 (en) Semiconductor device and its manufacturing method
SG121710A1 (en) Semiconductor device and fabrication method thereof
GB2373635B (en) Semiconductor device and method of manufacturing the same
EP1335425A4 (en) SEMICONDUCTOR ELEMENT AND ITS PRODUCTION PROCESS
GB2393325B (en) Semiconductor device and manufacturing method thereof
EP1310988A4 (en) SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF
EP1202350A3 (en) Semiconductor device and manufacturing method thereof
GB2392557B (en) Semiconductor device and method of manufacturing the same
GB2336469B (en) Semiconductor device and manufacturing method of the same
EP1187183A4 (en) MANUFACTURE OF A SEMICONDUCTOR PART AND ASSOCIATED MANUFACTURING STRIP
EP1261040A4 (en) SEMICONDUCTOR ARRANGEMENT AND ITS MANUFACTURING METHOD
SG89393A1 (en) Semiconductor device and process of manufacturing the same
EP1174916A3 (en) Semiconductor device and semiconductor device manufacturing method
SG84573A1 (en) Semiconductor device and method of fabricating the same