JP2005164854A - 液晶表示装置 - Google Patents
液晶表示装置 Download PDFInfo
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- JP2005164854A JP2005164854A JP2003401964A JP2003401964A JP2005164854A JP 2005164854 A JP2005164854 A JP 2005164854A JP 2003401964 A JP2003401964 A JP 2003401964A JP 2003401964 A JP2003401964 A JP 2003401964A JP 2005164854 A JP2005164854 A JP 2005164854A
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 66
- 239000000758 substrate Substances 0.000 claims description 77
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 150000002739 metals Chemical class 0.000 claims description 6
- 229910000838 Al alloy Inorganic materials 0.000 claims description 5
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 abstract description 33
- 239000011159 matrix material Substances 0.000 abstract description 16
- 230000006866 deterioration Effects 0.000 abstract description 5
- 239000007788 liquid Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 56
- 238000000034 method Methods 0.000 description 38
- 229910021417 amorphous silicon Inorganic materials 0.000 description 32
- 238000004519 manufacturing process Methods 0.000 description 19
- 239000004065 semiconductor Substances 0.000 description 15
- 238000002161 passivation Methods 0.000 description 12
- 238000004544 sputter deposition Methods 0.000 description 11
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 9
- 238000001039 wet etching Methods 0.000 description 8
- 230000007261 regionalization Effects 0.000 description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 5
- 230000035515 penetration Effects 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 239000012466 permeate Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
【解決手段】ドレイン配線6と交差する領域近傍におけるゲート配線2の少なくとも一方の側部に、ドレイン配線6の延在方向に窪む1以上の凹部13をドレイン配線6の幅以上の奥行きで形成し、更に、ゲート配線2をMo/Alなどの2層構造としてゲート配線2の端面をテーパー状に加工する。このように、十分な奥行きの凹部13を設けることによってエッチング液の侵入経路を十分に長くすることができ、また、ゲート配線2の端面をテーパー状にすることにより、ドレイン配線6に生じる段差を緩和して段差部分における膜質の劣化や膜厚の減少を抑制することができ、ゲート配線2との交差部におけるドレイン配線6の断線を確実に防止する。
【選択図】図1
Description
2 ゲート配線
2a ゲート電極
3 ゲート絶縁膜
4 a−Si層
5 n+a−Si層
6 ドレイン配線
6a ドレイン電極
7 ソース電極
8 パッシベーション膜
9 画素電極
10 コンタクト部
11 TFT
12a〜12f レジストパターン
13 凹部
14 フォトマスク
Claims (6)
- 透明絶縁基板上に、互いに略直交する下層側の第1の配線と上層側の第2の配線とが配設され、前記第1の配線と前記第2の配線とで囲まれる各々の領域に薄膜トランジスタが形成されてなる液晶表示装置において、
前記第2の配線と交差する領域近傍における前記第1の配線の少なくとも一方の側部に、前記第2の配線の延在方向に窪む1以上の凹部が形成されていることを特徴とする液晶表示装置。 - 透明絶縁基板上に、互いに略直交する下層側の第1の配線と上層側の第2の配線とが配設され、前記第1の配線と前記第2の配線とで囲まれる各々の領域に薄膜トランジスタが形成されてなる液晶表示装置において、
前記第2の配線と交差する領域近傍における前記第1の配線の少なくとも一方の側部に、前記第2の配線の延在方向に窪む1以上の凹部が、前記第2の配線の幅以上の奥行きで形成されていることを特徴とする液晶表示装置。 - 前記第2の配線と交差する領域近傍における前記第1の配線の各々の前記側部において、前記第2の配線の延在方向に延びる前記凹部の2つ以上の辺が前記第2の配線の内側に配置されるように、前記凹部が形成されていることを特徴とする請求項1又は2に記載の液晶表示装置。
- 前記第2の配線と交差する領域近傍における前記第1の配線の各々の前記側部に前記凹部が2つ形成され、前記第2の配線の延在方向に延びる前記2つの凹部の相隣り合う辺が前記第2の配線の内側に配置されるように、前記凹部が形成されていることを特徴とする請求項1又は2に記載の液晶表示装置。
- 前記第1の配線は、異なる種類の複数の金属の積層体からなり、該第1の配線の端面は所定の傾斜角のテーパー状に形成されていることを特徴とする請求項1乃至4のいずれか一に記載の液晶表示装置。
- 前記異なる種類の複数の金属は、下層側がAl又はAl合金、上層側がMo又はMo合金であり、前記所定の傾斜角は、略30°乃至80°の範囲であることを特徴とする請求項5記載の液晶表示装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003401964A JP2005164854A (ja) | 2003-12-01 | 2003-12-01 | 液晶表示装置 |
KR1020040098432A KR100683288B1 (ko) | 2003-12-01 | 2004-11-29 | 액정 디스플레이 유닛 |
TW093136866A TWI247431B (en) | 2003-12-01 | 2004-11-30 | Liquid crystal display unit |
US11/000,153 US7511301B2 (en) | 2003-12-01 | 2004-12-01 | Liquid crystal display unit |
CNB2004100982904A CN100432807C (zh) | 2003-12-01 | 2004-12-01 | 液晶显示单元 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003401964A JP2005164854A (ja) | 2003-12-01 | 2003-12-01 | 液晶表示装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2005164854A true JP2005164854A (ja) | 2005-06-23 |
Family
ID=34725724
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003401964A Pending JP2005164854A (ja) | 2003-12-01 | 2003-12-01 | 液晶表示装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7511301B2 (ja) |
JP (1) | JP2005164854A (ja) |
KR (1) | KR100683288B1 (ja) |
CN (1) | CN100432807C (ja) |
TW (1) | TWI247431B (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007052419A (ja) * | 2005-08-12 | 2007-03-01 | Samsung Electronics Co Ltd | 薄膜トランジスタ表示板及びこれを含む液晶表示装置 |
JP2007310351A (ja) * | 2006-05-18 | 2007-11-29 | Lg Phillips Lcd Co Ltd | 液晶表示装置用アレイ基板及びその製造方法 |
WO2012070498A1 (ja) * | 2010-11-25 | 2012-05-31 | シャープ株式会社 | 表示装置及びテレビ受信装置 |
CN103176324A (zh) * | 2011-12-20 | 2013-06-26 | 株式会社日本显示器中部 | 液晶显示装置 |
JP2020102632A (ja) * | 2008-12-26 | 2020-07-02 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4016709B2 (ja) * | 2002-04-26 | 2007-12-05 | 日本電気株式会社 | オーディオデータの符号変換伝送方法と符号変換受信方法及び装置とシステムならびにプログラム |
KR20060042425A (ko) * | 2004-11-09 | 2006-05-15 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
KR100715780B1 (ko) * | 2005-06-20 | 2007-05-08 | 박상수 | 탄성 가변형 침대 매트리스 |
KR101190071B1 (ko) * | 2005-12-29 | 2012-10-12 | 엘지디스플레이 주식회사 | 액정표시장치 및 그 제조방법 |
CN100412671C (zh) * | 2006-03-30 | 2008-08-20 | 友达光电股份有限公司 | 液晶显示装置 |
US9646923B2 (en) | 2012-04-17 | 2017-05-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor devices, methods of manufacture thereof, and packaged semiconductor devices |
TWI681233B (zh) * | 2012-10-12 | 2020-01-01 | 日商半導體能源研究所股份有限公司 | 液晶顯示裝置、觸控面板及液晶顯示裝置的製造方法 |
TWI528074B (zh) * | 2014-03-28 | 2016-04-01 | 群創光電股份有限公司 | 顯示面板 |
KR102326555B1 (ko) * | 2015-04-29 | 2021-11-17 | 삼성디스플레이 주식회사 | 표시장치 |
KR102514409B1 (ko) * | 2015-09-15 | 2023-03-28 | 삼성디스플레이 주식회사 | 표시 장치 |
KR102568776B1 (ko) | 2016-03-28 | 2023-08-22 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
CN105633102B (zh) * | 2016-04-05 | 2018-11-09 | 京东方科技集团股份有限公司 | 阵列基板、薄膜晶体管、显示器件的制作方法、显示装置 |
KR102473069B1 (ko) * | 2018-01-02 | 2022-12-01 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
KR102091764B1 (ko) | 2018-02-09 | 2020-03-24 | 김형민 | 매트리스용 쿠션 |
CN109545823A (zh) * | 2018-10-23 | 2019-03-29 | 武汉华星光电半导体显示技术有限公司 | 阵列基板、该阵列基板的制备方法及显示面板 |
KR102030505B1 (ko) | 2019-05-21 | 2019-10-10 | 김빛나 | 공기층이 형성된 소파 |
FR3106238B1 (fr) * | 2020-01-13 | 2023-10-20 | New Imaging Tech | Détecteur d’image à collection électronique latérale |
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-
2003
- 2003-12-01 JP JP2003401964A patent/JP2005164854A/ja active Pending
-
2004
- 2004-11-29 KR KR1020040098432A patent/KR100683288B1/ko not_active IP Right Cessation
- 2004-11-30 TW TW093136866A patent/TWI247431B/zh not_active IP Right Cessation
- 2004-12-01 CN CNB2004100982904A patent/CN100432807C/zh not_active Expired - Fee Related
- 2004-12-01 US US11/000,153 patent/US7511301B2/en not_active Expired - Fee Related
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007052419A (ja) * | 2005-08-12 | 2007-03-01 | Samsung Electronics Co Ltd | 薄膜トランジスタ表示板及びこれを含む液晶表示装置 |
JP2007310351A (ja) * | 2006-05-18 | 2007-11-29 | Lg Phillips Lcd Co Ltd | 液晶表示装置用アレイ基板及びその製造方法 |
JP2020102632A (ja) * | 2008-12-26 | 2020-07-02 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US11817506B2 (en) | 2008-12-26 | 2023-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
WO2012070498A1 (ja) * | 2010-11-25 | 2012-05-31 | シャープ株式会社 | 表示装置及びテレビ受信装置 |
US8994886B2 (en) | 2010-11-25 | 2015-03-31 | Sharp Kabushiki Kaisha | Display device and television device |
CN103176324A (zh) * | 2011-12-20 | 2013-06-26 | 株式会社日本显示器中部 | 液晶显示装置 |
JP2013130651A (ja) * | 2011-12-20 | 2013-07-04 | Japan Display Central Co Ltd | 液晶表示装置 |
US8976309B2 (en) | 2011-12-20 | 2015-03-10 | Japan Display Inc. | Liquid crystal display device |
US9229282B2 (en) | 2011-12-20 | 2016-01-05 | Japan Display Inc. | Liquid crystal display device |
Also Published As
Publication number | Publication date |
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US20050161670A1 (en) | 2005-07-28 |
TWI247431B (en) | 2006-01-11 |
US7511301B2 (en) | 2009-03-31 |
KR100683288B1 (ko) | 2007-02-15 |
KR20050053000A (ko) | 2005-06-07 |
CN1624550A (zh) | 2005-06-08 |
TW200529451A (en) | 2005-09-01 |
CN100432807C (zh) | 2008-11-12 |
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