NO332908B1 - Nitrid halvlederlaserinnretning - Google Patents
Nitrid halvlederlaserinnretningInfo
- Publication number
- NO332908B1 NO332908B1 NO20023642A NO20023642A NO332908B1 NO 332908 B1 NO332908 B1 NO 332908B1 NO 20023642 A NO20023642 A NO 20023642A NO 20023642 A NO20023642 A NO 20023642A NO 332908 B1 NO332908 B1 NO 332908B1
- Authority
- NO
- Norway
- Prior art keywords
- layer
- type
- nitride semiconductor
- ohmic electrode
- insulating film
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 127
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 124
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 230000004888 barrier function Effects 0.000 claims description 41
- 239000000463 material Substances 0.000 claims description 32
- 229910019836 RhO Inorganic materials 0.000 claims description 30
- 229910052719 titanium Inorganic materials 0.000 claims description 20
- 229910052759 nickel Inorganic materials 0.000 claims description 19
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 239000000956 alloy Substances 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 10
- 229910052742 iron Inorganic materials 0.000 claims description 9
- 229910052721 tungsten Inorganic materials 0.000 claims description 9
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 7
- 229910052715 tantalum Inorganic materials 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 238000005470 impregnation Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims 2
- 229910019899 RuO Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 321
- 230000015572 biosynthetic process Effects 0.000 description 22
- 239000012535 impurity Substances 0.000 description 19
- 229910002601 GaN Inorganic materials 0.000 description 16
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 14
- 238000000034 method Methods 0.000 description 14
- 230000003287 optical effect Effects 0.000 description 14
- 230000010355 oscillation Effects 0.000 description 11
- 229910052737 gold Inorganic materials 0.000 description 10
- 239000007789 gas Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 7
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 7
- 229910021529 ammonia Inorganic materials 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 238000005538 encapsulation Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910018885 Pt—Au Inorganic materials 0.000 description 2
- -1 RUO2 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000009993 protective function Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 238000005275 alloying Methods 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000009432 framing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0213—Sapphire, quartz or diamond based substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
- H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000038304 | 2000-02-16 | ||
PCT/JP2001/001063 WO2001061804A1 (fr) | 2000-02-16 | 2001-02-15 | Dispositif de laser semiconducteur au nitrure |
Publications (3)
Publication Number | Publication Date |
---|---|
NO20023642D0 NO20023642D0 (no) | 2002-07-31 |
NO20023642L NO20023642L (no) | 2002-10-01 |
NO332908B1 true NO332908B1 (no) | 2013-01-28 |
Family
ID=18562064
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO20023642A NO332908B1 (no) | 2000-02-16 | 2002-07-31 | Nitrid halvlederlaserinnretning |
Country Status (13)
Country | Link |
---|---|
US (2) | US6838701B2 (fr) |
EP (1) | EP1276186B1 (fr) |
JP (1) | JP3864782B2 (fr) |
KR (2) | KR100753146B1 (fr) |
CN (1) | CN1203596C (fr) |
AU (2) | AU3229701A (fr) |
CA (1) | CA2400121C (fr) |
IL (2) | IL151192A0 (fr) |
NO (1) | NO332908B1 (fr) |
PL (1) | PL202938B1 (fr) |
RU (1) | RU2238607C2 (fr) |
TW (1) | TW501288B (fr) |
WO (1) | WO2001061804A1 (fr) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3812366B2 (ja) * | 2001-06-04 | 2006-08-23 | 豊田合成株式会社 | Iii族窒化物系化合物半導体素子の製造方法 |
JP3912044B2 (ja) * | 2001-06-06 | 2007-05-09 | 豊田合成株式会社 | Iii族窒化物系化合物半導体発光素子の製造方法 |
JP3924756B2 (ja) * | 2002-01-21 | 2007-06-06 | 松下電器産業株式会社 | 窒化物半導体レーザ素子の製造方法 |
US8294172B2 (en) | 2002-04-09 | 2012-10-23 | Lg Electronics Inc. | Method of fabricating vertical devices using a metal support film |
JP2004006498A (ja) * | 2002-05-31 | 2004-01-08 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子 |
US6841802B2 (en) | 2002-06-26 | 2005-01-11 | Oriol, Inc. | Thin film light emitting diode |
JP4480948B2 (ja) * | 2002-07-15 | 2010-06-16 | 日本オプネクスト株式会社 | 半導体レーザ素子及びその製造方法 |
JP4507532B2 (ja) * | 2002-08-27 | 2010-07-21 | 日亜化学工業株式会社 | 窒化物半導体素子 |
JP4337520B2 (ja) * | 2002-11-25 | 2009-09-30 | 日亜化学工業株式会社 | リッジ導波路型半導体レーザ |
TWI303909B (en) | 2002-11-25 | 2008-12-01 | Nichia Corp | Ridge waveguide semiconductor laser diode |
TW577184B (en) * | 2002-12-26 | 2004-02-21 | Epistar Corp | Light emitting layer having voltage/resistance interdependent layer |
JP4635418B2 (ja) * | 2003-07-31 | 2011-02-23 | 日亜化学工業株式会社 | 半導体装置の製造方法及び半導体装置 |
KR100576849B1 (ko) * | 2003-09-19 | 2006-05-10 | 삼성전기주식회사 | 발광소자 및 그 제조방법 |
TWI246783B (en) * | 2003-09-24 | 2006-01-01 | Matsushita Electric Works Ltd | Light-emitting device and its manufacturing method |
JP4326297B2 (ja) * | 2003-09-30 | 2009-09-02 | シャープ株式会社 | モノリシック多波長レーザ素子およびその製造方法 |
KR100994567B1 (ko) * | 2003-11-11 | 2010-11-15 | 삼성전자주식회사 | 반도체 레이저 다이오드 및 그 제조방법 |
JP4640752B2 (ja) * | 2003-12-05 | 2011-03-02 | シャープ株式会社 | 窒化ガリウム系半導体レーザ及びその製造方法 |
JP2005191209A (ja) * | 2003-12-25 | 2005-07-14 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置およびその製造方法 |
JP4956928B2 (ja) * | 2004-09-28 | 2012-06-20 | 日亜化学工業株式会社 | 半導体装置 |
JP4601391B2 (ja) * | 2004-10-28 | 2010-12-22 | シャープ株式会社 | 窒化物半導体素子およびその製造方法 |
KR100631898B1 (ko) * | 2005-01-19 | 2006-10-11 | 삼성전기주식회사 | Esd보호 능력을 갖는 질화갈륨계 발광 소자 및 그 제조방법 |
US20070131947A1 (en) * | 2005-12-13 | 2007-06-14 | Lg Innotek Co., Ltd | Light-emitting device |
US20090001402A1 (en) * | 2006-03-22 | 2009-01-01 | Rohm Co., Ltd. | Semiconductor element and method of making the same |
JP2007329350A (ja) * | 2006-06-08 | 2007-12-20 | Matsushita Electric Ind Co Ltd | 半導体装置 |
JP5008911B2 (ja) * | 2006-07-04 | 2012-08-22 | ローム株式会社 | 半導体発光素子およびその製造方法 |
JP4353232B2 (ja) * | 2006-10-24 | 2009-10-28 | ソニー株式会社 | 発光素子 |
JP2008171997A (ja) * | 2007-01-11 | 2008-07-24 | Rohm Co Ltd | GaN系半導体発光素子 |
US9318874B2 (en) * | 2009-06-03 | 2016-04-19 | Nichia Corporation | Semiconductor device and method of manufacturing semiconductor device |
JP2011009610A (ja) | 2009-06-29 | 2011-01-13 | Sharp Corp | 窒化物半導体レーザ素子及びウェハ |
RU2455739C2 (ru) * | 2010-03-19 | 2012-07-10 | Владимир Александрович Филоненко | Линейка лазерных диодов |
US20120037946A1 (en) * | 2010-08-12 | 2012-02-16 | Chi Mei Lighting Technology Corporation | Light emitting devices |
JP5204170B2 (ja) * | 2010-08-25 | 2013-06-05 | シャープ株式会社 | 窒化ガリウム系半導体レーザ及びその製造方法 |
TWI416765B (zh) * | 2011-01-17 | 2013-11-21 | Light emitting diodes | |
CN108807626B (zh) * | 2011-09-15 | 2020-02-21 | 晶元光电股份有限公司 | 发光元件 |
JP2012023406A (ja) * | 2011-10-28 | 2012-02-02 | Sharp Corp | 窒化物半導体発光素子とその窒化物半導体発光素子を備える窒化ガリウム系化合物半導体レーザ素子 |
US8716743B2 (en) * | 2012-02-02 | 2014-05-06 | Epistar Corporation | Optoelectronic semiconductor device and the manufacturing method thereof |
CN106299069A (zh) * | 2016-08-31 | 2017-01-04 | 厦门三安光电有限公司 | 一种激光二极管及其制作方法 |
DE102016120685A1 (de) | 2016-10-28 | 2018-05-03 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterlasers und Halbleiterlaser |
Family Cites Families (22)
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JPS5740942A (en) * | 1980-08-22 | 1982-03-06 | Mitsubishi Electric Corp | Semiconductor device |
JPS60199349A (ja) | 1984-03-21 | 1985-10-08 | Fuji Oil Co Ltd | 蛋白の製造法 |
JPS6117146A (ja) | 1984-07-03 | 1986-01-25 | Toshiba Corp | レ−ザマ−キング用マスク |
JPS63124461A (ja) * | 1986-11-12 | 1988-05-27 | Nec Corp | 半導体装置 |
JPS649382A (en) * | 1987-06-30 | 1989-01-12 | Victor Company Of Japan | Magnetic sensor |
JPH0441590Y2 (fr) * | 1987-07-07 | 1992-09-30 | ||
JPS6427939A (en) * | 1987-07-24 | 1989-01-30 | Dainippon Ink & Chemicals | Laminate of pigmented film and glass |
JP2631749B2 (ja) | 1989-06-29 | 1997-07-16 | 三菱自動車工業株式会社 | 高周波焼入れ装置 |
JP2950192B2 (ja) * | 1995-04-07 | 1999-09-20 | 日亜化学工業株式会社 | 窒化物半導体の電極 |
JPH09116111A (ja) | 1995-10-23 | 1997-05-02 | Olympus Optical Co Ltd | 半導体装置 |
JP3700872B2 (ja) * | 1995-12-28 | 2005-09-28 | シャープ株式会社 | 窒化物系iii−v族化合物半導体装置およびその製造方法 |
JPH1027939A (ja) * | 1996-07-11 | 1998-01-27 | Nichia Chem Ind Ltd | 窒化物半導体レーザ素子 |
JP3698229B2 (ja) * | 1997-10-24 | 2005-09-21 | ソニー株式会社 | 半導体素子および半導体発光素子 |
JP3322300B2 (ja) | 1997-11-14 | 2002-09-09 | 日亜化学工業株式会社 | 窒化ガリウム系半導体発光素子と受光素子 |
JPH11220168A (ja) * | 1998-02-02 | 1999-08-10 | Toyoda Gosei Co Ltd | 窒化ガリウム系化合物半導体素子及びその製造方法 |
JP3031415B1 (ja) * | 1998-10-06 | 2000-04-10 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子 |
JP2000252230A (ja) * | 1998-12-28 | 2000-09-14 | Sanyo Electric Co Ltd | 半導体素子およびその製造方法 |
US6522676B1 (en) * | 1999-01-26 | 2003-02-18 | Sanyo Electric Co., Ltd | Nitride semiconductor laser device |
JP4296644B2 (ja) | 1999-01-29 | 2009-07-15 | 豊田合成株式会社 | 発光ダイオード |
EP1168539B1 (fr) * | 1999-03-04 | 2009-12-16 | Nichia Corporation | Element de laser semiconducteur au nitrure |
JP3487251B2 (ja) | 1999-03-04 | 2004-01-13 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子 |
JP3754226B2 (ja) * | 1999-03-25 | 2006-03-08 | 三洋電機株式会社 | 半導体発光素子 |
-
2001
- 2001-02-15 JP JP2001560491A patent/JP3864782B2/ja not_active Expired - Fee Related
- 2001-02-15 AU AU3229701A patent/AU3229701A/xx active Pending
- 2001-02-15 KR KR1020027010613A patent/KR100753146B1/ko active IP Right Grant
- 2001-02-15 EP EP01904458.5A patent/EP1276186B1/fr not_active Expired - Lifetime
- 2001-02-15 KR KR1020077008048A patent/KR100790964B1/ko active IP Right Grant
- 2001-02-15 CA CA2400121A patent/CA2400121C/fr not_active Expired - Lifetime
- 2001-02-15 US US10/203,903 patent/US6838701B2/en not_active Expired - Lifetime
- 2001-02-15 AU AU2001232297A patent/AU2001232297B2/en not_active Expired
- 2001-02-15 IL IL15119201A patent/IL151192A0/xx not_active IP Right Cessation
- 2001-02-15 WO PCT/JP2001/001063 patent/WO2001061804A1/fr active IP Right Grant
- 2001-02-15 PL PL357338A patent/PL202938B1/pl unknown
- 2001-02-15 RU RU2002124578/28A patent/RU2238607C2/ru not_active IP Right Cessation
- 2001-02-15 CN CNB018048854A patent/CN1203596C/zh not_active Expired - Lifetime
- 2001-02-16 TW TW090103588A patent/TW501288B/zh not_active IP Right Cessation
-
2002
- 2002-07-31 NO NO20023642A patent/NO332908B1/no not_active IP Right Cessation
- 2002-08-11 IL IL151192A patent/IL151192A/en unknown
-
2004
- 2004-06-15 US US10/866,723 patent/US7167497B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
PL357338A1 (en) | 2004-07-26 |
IL151192A (en) | 2006-10-31 |
NO20023642D0 (no) | 2002-07-31 |
JP3864782B2 (ja) | 2007-01-10 |
CN1404641A (zh) | 2003-03-19 |
US20030038294A1 (en) | 2003-02-27 |
KR20020075917A (ko) | 2002-10-07 |
CA2400121A1 (fr) | 2001-08-23 |
KR100790964B1 (ko) | 2008-01-04 |
NO20023642L (no) | 2002-10-01 |
US20040233956A1 (en) | 2004-11-25 |
RU2238607C2 (ru) | 2004-10-20 |
TW501288B (en) | 2002-09-01 |
CN1203596C (zh) | 2005-05-25 |
EP1276186A4 (fr) | 2006-09-20 |
EP1276186A1 (fr) | 2003-01-15 |
RU2002124578A (ru) | 2004-03-27 |
AU2001232297B2 (en) | 2005-10-06 |
US7167497B2 (en) | 2007-01-23 |
AU3229701A (en) | 2001-08-27 |
CA2400121C (fr) | 2010-09-21 |
PL202938B1 (pl) | 2009-08-31 |
IL151192A0 (en) | 2003-04-10 |
US6838701B2 (en) | 2005-01-04 |
KR100753146B1 (ko) | 2007-08-30 |
KR20070046208A (ko) | 2007-05-02 |
EP1276186B1 (fr) | 2016-12-07 |
WO2001061804A1 (fr) | 2001-08-23 |
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