KR20070046208A - 질화물반도체 레이저소자 - Google Patents
질화물반도체 레이저소자 Download PDFInfo
- Publication number
- KR20070046208A KR20070046208A KR1020077008048A KR20077008048A KR20070046208A KR 20070046208 A KR20070046208 A KR 20070046208A KR 1020077008048 A KR1020077008048 A KR 1020077008048A KR 20077008048 A KR20077008048 A KR 20077008048A KR 20070046208 A KR20070046208 A KR 20070046208A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- nitride semiconductor
- ohmic electrode
- type
- insulating film
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0213—Sapphire, quartz or diamond based substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
- H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
Description
NO | p측 오믹전극 | P측 패드전극 | AuSn | 특성변화온도 |
1 | Ni-Au | Ni-Au | 없음 | 325 |
2 | Ni-Au | Ni-Au | 있음 | 275 |
3 | Ni-Au | Ni-Ti-Au | 없음 | 325 |
4 | Ni-Au | Ni-Ti-Au | 있음 | 325 |
5 | Ni-Au | Rh-Au | 없음 | 325 |
6 | Ni-Au | Rh-Au | 있음 | 325 |
7 | Ni-Au | RhO-Au | 없음 | 350 |
8 | Ni-Au | RhO-Au | 있음 | 350 |
9 | Ni-Au | RhO-Pt-Au | 없음 | 350 |
10 | Ni-Au | RhO-Pt-Au | 있음 | 350 |
11 | Ni-Au-RhO | Ni-Ti-Au | 없음 | 300 |
12 | Ni-Au-RhO | Ni-Ti-Au | 있음 | 300 |
13 | Ni-Au-RhO | RhO-Au | 없음 | 375 |
14 | Ni-Au-RhO | RhO-Au | 있음 | 375 |
15 | Ni-Au-RhO | RhO-Pt-Au | 없음 | 375 |
16 | Ni-Au-RhO | RhO-Pt-Au | 있음 | 375 |
Claims (3)
- p형 질화물반도체층과,상기 p형 질화물반도체층 위의 p측 오믹전극과,상기 p측 오믹전극 위의 p측 패드전극을 구비하고,상기 p측 오믹전극이 Ni, Co, Fe, Ti 및 Cu로 이루어진 군에서 선택된 적어도 1종의 층과 Au층을 적층한 후 아닐링하여 형성된 합금층으로 만들어지고,상기 p측 패드전극은, 상기 p측 오믹전극에 접촉하고 Rh 또는 RhO로 만들어진 밀착층과 Ti, Pt, W, Ta, Mo 및 이들의 질화물로 이루어진 군에서 선택된 적어도 하나로 만들어지고 상기 밀착층 위의 베리어층과, 상기 베리어층 위의 Au층으로 이루어지는 질화물반도체소자.
- 제1항에 있어서,상기 p측 오믹전극은 최상층에 RhO층을 포함하여 이루어지고, 상기 밀착층이 RhO로 만들어지는 질화물반도체소자.
- p형 질화물반도체층 위에, Ni, Co, Fe, Ti 및 Cu로 된 군에서 선택된 적어도 1종으로 만들어진 제1층과, Au층과, RhO층을 순차적층함으로써 p측 오믹전극을 형성하는 단계와,상기 p측 오믹전극을 아닐링하는 단계와,상기 아닐링된 p측 오믹전극 위에 RhO층을 형성하는 단계와,RhO층을 형성하고 상기 RhO층의 위에 Au층을 형성하는 것을 포함하여 상기 p측 오믹전극 위에 p측 패드전극을 형성하는 단계를 포함하는 것을 특징으로 하는 질화물반도체소자의 전극 형성방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000038304 | 2000-02-16 | ||
JPJP-P-2000-00038304 | 2000-02-16 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020027010613A Division KR100753146B1 (ko) | 2000-02-16 | 2001-02-15 | 질화물반도체 레이저소자 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20070046208A true KR20070046208A (ko) | 2007-05-02 |
KR100790964B1 KR100790964B1 (ko) | 2008-01-04 |
Family
ID=18562064
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020077008048A KR100790964B1 (ko) | 2000-02-16 | 2001-02-15 | 질화물반도체 레이저소자 |
KR1020027010613A KR100753146B1 (ko) | 2000-02-16 | 2001-02-15 | 질화물반도체 레이저소자 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020027010613A KR100753146B1 (ko) | 2000-02-16 | 2001-02-15 | 질화물반도체 레이저소자 |
Country Status (13)
Country | Link |
---|---|
US (2) | US6838701B2 (ko) |
EP (1) | EP1276186B1 (ko) |
JP (1) | JP3864782B2 (ko) |
KR (2) | KR100790964B1 (ko) |
CN (1) | CN1203596C (ko) |
AU (2) | AU3229701A (ko) |
CA (1) | CA2400121C (ko) |
IL (2) | IL151192A0 (ko) |
NO (1) | NO332908B1 (ko) |
PL (1) | PL202938B1 (ko) |
RU (1) | RU2238607C2 (ko) |
TW (1) | TW501288B (ko) |
WO (1) | WO2001061804A1 (ko) |
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JP3912044B2 (ja) * | 2001-06-06 | 2007-05-09 | 豊田合成株式会社 | Iii族窒化物系化合物半導体発光素子の製造方法 |
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JP2004006498A (ja) * | 2002-05-31 | 2004-01-08 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子 |
US6841802B2 (en) | 2002-06-26 | 2005-01-11 | Oriol, Inc. | Thin film light emitting diode |
JP4480948B2 (ja) * | 2002-07-15 | 2010-06-16 | 日本オプネクスト株式会社 | 半導体レーザ素子及びその製造方法 |
JP4507532B2 (ja) * | 2002-08-27 | 2010-07-21 | 日亜化学工業株式会社 | 窒化物半導体素子 |
JP4337520B2 (ja) * | 2002-11-25 | 2009-09-30 | 日亜化学工業株式会社 | リッジ導波路型半導体レーザ |
TWI303909B (en) * | 2002-11-25 | 2008-12-01 | Nichia Corp | Ridge waveguide semiconductor laser diode |
TW577184B (en) * | 2002-12-26 | 2004-02-21 | Epistar Corp | Light emitting layer having voltage/resistance interdependent layer |
JP4635418B2 (ja) * | 2003-07-31 | 2011-02-23 | 日亜化学工業株式会社 | 半導体装置の製造方法及び半導体装置 |
KR100576849B1 (ko) * | 2003-09-19 | 2006-05-10 | 삼성전기주식회사 | 발광소자 및 그 제조방법 |
TWI246783B (en) * | 2003-09-24 | 2006-01-01 | Matsushita Electric Works Ltd | Light-emitting device and its manufacturing method |
JP4326297B2 (ja) * | 2003-09-30 | 2009-09-02 | シャープ株式会社 | モノリシック多波長レーザ素子およびその製造方法 |
KR100994567B1 (ko) * | 2003-11-11 | 2010-11-15 | 삼성전자주식회사 | 반도체 레이저 다이오드 및 그 제조방법 |
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JP4956928B2 (ja) * | 2004-09-28 | 2012-06-20 | 日亜化学工業株式会社 | 半導体装置 |
JP4601391B2 (ja) * | 2004-10-28 | 2010-12-22 | シャープ株式会社 | 窒化物半導体素子およびその製造方法 |
KR100631898B1 (ko) * | 2005-01-19 | 2006-10-11 | 삼성전기주식회사 | Esd보호 능력을 갖는 질화갈륨계 발광 소자 및 그 제조방법 |
US20070131947A1 (en) * | 2005-12-13 | 2007-06-14 | Lg Innotek Co., Ltd | Light-emitting device |
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JP2007329350A (ja) * | 2006-06-08 | 2007-12-20 | Matsushita Electric Ind Co Ltd | 半導体装置 |
JP5008911B2 (ja) * | 2006-07-04 | 2012-08-22 | ローム株式会社 | 半導体発光素子およびその製造方法 |
JP4353232B2 (ja) * | 2006-10-24 | 2009-10-28 | ソニー株式会社 | 発光素子 |
JP2008171997A (ja) * | 2007-01-11 | 2008-07-24 | Rohm Co Ltd | GaN系半導体発光素子 |
US9318874B2 (en) * | 2009-06-03 | 2016-04-19 | Nichia Corporation | Semiconductor device and method of manufacturing semiconductor device |
JP2011009610A (ja) | 2009-06-29 | 2011-01-13 | Sharp Corp | 窒化物半導体レーザ素子及びウェハ |
RU2455739C2 (ru) * | 2010-03-19 | 2012-07-10 | Владимир Александрович Филоненко | Линейка лазерных диодов |
US20120037946A1 (en) * | 2010-08-12 | 2012-02-16 | Chi Mei Lighting Technology Corporation | Light emitting devices |
JP5204170B2 (ja) * | 2010-08-25 | 2013-06-05 | シャープ株式会社 | 窒化ガリウム系半導体レーザ及びその製造方法 |
TWI416765B (zh) * | 2011-01-17 | 2013-11-21 | Light emitting diodes | |
CN108807626B (zh) * | 2011-09-15 | 2020-02-21 | 晶元光电股份有限公司 | 发光元件 |
JP2012023406A (ja) * | 2011-10-28 | 2012-02-02 | Sharp Corp | 窒化物半導体発光素子とその窒化物半導体発光素子を備える窒化ガリウム系化合物半導体レーザ素子 |
US8716743B2 (en) * | 2012-02-02 | 2014-05-06 | Epistar Corporation | Optoelectronic semiconductor device and the manufacturing method thereof |
CN106299069A (zh) * | 2016-08-31 | 2017-01-04 | 厦门三安光电有限公司 | 一种激光二极管及其制作方法 |
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-
2001
- 2001-02-15 EP EP01904458.5A patent/EP1276186B1/en not_active Expired - Lifetime
- 2001-02-15 AU AU3229701A patent/AU3229701A/xx active Pending
- 2001-02-15 KR KR1020077008048A patent/KR100790964B1/ko active IP Right Grant
- 2001-02-15 CA CA2400121A patent/CA2400121C/en not_active Expired - Lifetime
- 2001-02-15 CN CNB018048854A patent/CN1203596C/zh not_active Expired - Lifetime
- 2001-02-15 KR KR1020027010613A patent/KR100753146B1/ko active IP Right Grant
- 2001-02-15 IL IL15119201A patent/IL151192A0/xx not_active IP Right Cessation
- 2001-02-15 US US10/203,903 patent/US6838701B2/en not_active Expired - Lifetime
- 2001-02-15 AU AU2001232297A patent/AU2001232297B2/en not_active Expired
- 2001-02-15 PL PL357338A patent/PL202938B1/pl unknown
- 2001-02-15 RU RU2002124578/28A patent/RU2238607C2/ru not_active IP Right Cessation
- 2001-02-15 JP JP2001560491A patent/JP3864782B2/ja not_active Expired - Fee Related
- 2001-02-15 WO PCT/JP2001/001063 patent/WO2001061804A1/ja active IP Right Grant
- 2001-02-16 TW TW090103588A patent/TW501288B/zh not_active IP Right Cessation
-
2002
- 2002-07-31 NO NO20023642A patent/NO332908B1/no not_active IP Right Cessation
- 2002-08-11 IL IL151192A patent/IL151192A/en unknown
-
2004
- 2004-06-15 US US10/866,723 patent/US7167497B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US6838701B2 (en) | 2005-01-04 |
KR100790964B1 (ko) | 2008-01-04 |
US7167497B2 (en) | 2007-01-23 |
EP1276186A1 (en) | 2003-01-15 |
CN1203596C (zh) | 2005-05-25 |
US20030038294A1 (en) | 2003-02-27 |
IL151192A (en) | 2006-10-31 |
RU2238607C2 (ru) | 2004-10-20 |
TW501288B (en) | 2002-09-01 |
JP3864782B2 (ja) | 2007-01-10 |
EP1276186A4 (en) | 2006-09-20 |
EP1276186B1 (en) | 2016-12-07 |
WO2001061804A1 (en) | 2001-08-23 |
NO20023642D0 (no) | 2002-07-31 |
CA2400121A1 (en) | 2001-08-23 |
NO20023642L (no) | 2002-10-01 |
PL202938B1 (pl) | 2009-08-31 |
AU2001232297B2 (en) | 2005-10-06 |
KR100753146B1 (ko) | 2007-08-30 |
PL357338A1 (en) | 2004-07-26 |
RU2002124578A (ru) | 2004-03-27 |
KR20020075917A (ko) | 2002-10-07 |
US20040233956A1 (en) | 2004-11-25 |
CN1404641A (zh) | 2003-03-19 |
AU3229701A (en) | 2001-08-27 |
IL151192A0 (en) | 2003-04-10 |
CA2400121C (en) | 2010-09-21 |
NO332908B1 (no) | 2013-01-28 |
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