JPS63124461A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS63124461A JPS63124461A JP61270173A JP27017386A JPS63124461A JP S63124461 A JPS63124461 A JP S63124461A JP 61270173 A JP61270173 A JP 61270173A JP 27017386 A JP27017386 A JP 27017386A JP S63124461 A JPS63124461 A JP S63124461A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- electrode
- roughened
- aqueous solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000005530 etching Methods 0.000 claims abstract description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 abstract description 6
- 238000007747 plating Methods 0.000 abstract description 5
- 239000007864 aqueous solution Substances 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 2
- 229910018885 Pt—Au Inorganic materials 0.000 abstract 1
- 239000005708 Sodium hypochlorite Substances 0.000 abstract 1
- 239000011259 mixed solution Substances 0.000 abstract 1
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 abstract 1
- 230000007423 decrease Effects 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
- H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
- H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
- H01L2224/02165—Reinforcing structures
- H01L2224/02166—Collar structures
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05073—Single internal layer
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05075—Plural internal layers
- H01L2224/0508—Plural internal layers being stacked
- H01L2224/05082—Two-layer arrangements
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05556—Shape in side view
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01011—Sodium [Na]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01022—Titanium [Ti]
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- H01L2924/01024—Chromium [Cr]
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- H01L2924/01078—Platinum [Pt]
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- H01L2924/01079—Gold [Au]
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10329—Gallium arsenide [GaAs]
Landscapes
- Engineering & Computer Science (AREA)
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- Electrodes Of Semiconductors (AREA)
- Wire Bonding (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
め要約のデータは記録されません。
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置に関し、特にボンディングパッド部
の電極構造の改良に関する〇 〔従来の技術〕 GaAsk用いた電界効果トランジスタ(以後、GaA
s FETと称す)は81バイポーラトランジスタの特
性限界上打破するマイクロ波トランジスタとして既に実
用化されてお、a、t+発の主力UKu帯以上の超高周
波帯に向けられている。この様な超高周波用のGaAs
FETではゲートあるいはドレインパッドのもつ寄生
容量による利得低下上貼ぐ為、パッドの大きさは一般に
30μm以下に設計されるが、パッド面積の縮小に伴っ
て半導体基板とパッドメタルとの接着強度が低下し、外
部り−ド全取ジ出す為のワイヤーボンディング時にパッ
ド部がしばしば剥れるという欠点があり、歩留り低下あ
るいは信頼性低下の大きな要因となっている0 〔発明が解決しようとする問題点〕 本発明はこの様な従来の欠点勿除去し、ボンディング時
に電極剥れの発生しないボンディングパッド構造金有す
る半導体装置上提供するものであるO 〔問題点?解決するための手段〕 本発明の半導体装置は、外部リード収り出し用のボンデ
ィングパッド部の電極構造において、該ボンディングパ
ッドが異方性エツチングにより粗面化された半導体基板
上に設けられている〇〔実施例〕 以下、実施例としてGaA3’!r半導体基板として用
いた場合上側にと95図面【用いて詳細に説明する0 第1図は本発明にがかる一実施例のパッド電極部の断面
図で、半導体基板1の粗面化され比表面1′上に例えば
約100OAのTi膜2.さらにその上に例えば約50
0OAのAu膜3全形成して、Au膜3にAu線4會ボ
ンディングしている。半導体基板1の粗面化は苛性ソー
ダ水溶液と次亜塩素酸す) IJウム水浴液の混合液音
用いて表面全エツチングすることにより得られる0この
混合液r用いると結晶方位依存性が強く、特に(111
)面のエツチング速度が(ioo)面に比べ遅いことか
らエツチングは一様に進行せず表面に凹凸が形成され粗
面化されるoTi膜2およびAu膜3は連続して蒸着法
あるいはスパッタ法で被層される0この様な電極構造に
すればパッド面積が30μ?ρ程度以下と小さくなって
も基板表面に凹凸が形成される為、実効的な表面積が増
大しボンディング強度試験全行った結果、粗面化7行っ
ていない時の電極(パッド)剥れの発生率は約20%で
あったのに対し、粗面化上適用することにより皆無とな
った。′l!i−た第2図は本発明にかかる他の実施例
の断面図で、Ti膜2の上に例えば2000Aのpt膜
6會被着し、更にその上に例えば約1μmのAuめっき
層7會形成した電極パッドの例である。Pt膜6はAu
めっき層7の給電用及び接着會良くする為に入れた膜で
、この様な構造においても同様にボンティング強度が改
善できることは勿論であるO 上記の実施例はパッド部のメタルkTi−Au膜で形成
したものであるが、Ti−Au膜の代りにCr−Au膜
、Cr −Pt−Au膜、Ti−At膜等を用いても同
様の効果が得られる。
の電極構造の改良に関する〇 〔従来の技術〕 GaAsk用いた電界効果トランジスタ(以後、GaA
s FETと称す)は81バイポーラトランジスタの特
性限界上打破するマイクロ波トランジスタとして既に実
用化されてお、a、t+発の主力UKu帯以上の超高周
波帯に向けられている。この様な超高周波用のGaAs
FETではゲートあるいはドレインパッドのもつ寄生
容量による利得低下上貼ぐ為、パッドの大きさは一般に
30μm以下に設計されるが、パッド面積の縮小に伴っ
て半導体基板とパッドメタルとの接着強度が低下し、外
部り−ド全取ジ出す為のワイヤーボンディング時にパッ
ド部がしばしば剥れるという欠点があり、歩留り低下あ
るいは信頼性低下の大きな要因となっている0 〔発明が解決しようとする問題点〕 本発明はこの様な従来の欠点勿除去し、ボンディング時
に電極剥れの発生しないボンディングパッド構造金有す
る半導体装置上提供するものであるO 〔問題点?解決するための手段〕 本発明の半導体装置は、外部リード収り出し用のボンデ
ィングパッド部の電極構造において、該ボンディングパ
ッドが異方性エツチングにより粗面化された半導体基板
上に設けられている〇〔実施例〕 以下、実施例としてGaA3’!r半導体基板として用
いた場合上側にと95図面【用いて詳細に説明する0 第1図は本発明にがかる一実施例のパッド電極部の断面
図で、半導体基板1の粗面化され比表面1′上に例えば
約100OAのTi膜2.さらにその上に例えば約50
0OAのAu膜3全形成して、Au膜3にAu線4會ボ
ンディングしている。半導体基板1の粗面化は苛性ソー
ダ水溶液と次亜塩素酸す) IJウム水浴液の混合液音
用いて表面全エツチングすることにより得られる0この
混合液r用いると結晶方位依存性が強く、特に(111
)面のエツチング速度が(ioo)面に比べ遅いことか
らエツチングは一様に進行せず表面に凹凸が形成され粗
面化されるoTi膜2およびAu膜3は連続して蒸着法
あるいはスパッタ法で被層される0この様な電極構造に
すればパッド面積が30μ?ρ程度以下と小さくなって
も基板表面に凹凸が形成される為、実効的な表面積が増
大しボンディング強度試験全行った結果、粗面化7行っ
ていない時の電極(パッド)剥れの発生率は約20%で
あったのに対し、粗面化上適用することにより皆無とな
った。′l!i−た第2図は本発明にかかる他の実施例
の断面図で、Ti膜2の上に例えば2000Aのpt膜
6會被着し、更にその上に例えば約1μmのAuめっき
層7會形成した電極パッドの例である。Pt膜6はAu
めっき層7の給電用及び接着會良くする為に入れた膜で
、この様な構造においても同様にボンティング強度が改
善できることは勿論であるO 上記の実施例はパッド部のメタルkTi−Au膜で形成
したものであるが、Ti−Au膜の代りにCr−Au膜
、Cr −Pt−Au膜、Ti−At膜等を用いても同
様の効果が得られる。
以上の説明から明らかなように5本発明によればワイヤ
ーボンディング時の電極部れt防止でき。
ーボンディング時の電極部れt防止でき。
半導体装置の歩留り及び信頼性を著しく向上することが
できる〇
できる〇
第1囚および第2図は本発明にかかるパッド電極部の断
面−である。 図において、1は半導体基板、1′は粗面部、2はT1
膜、3UAu膜、4HAuili、5は絶縁膜、6はp
t膜、7はAuめっきNt示す。 代理人 弁理士 内 原 晋′fJi図
面−である。 図において、1は半導体基板、1′は粗面部、2はT1
膜、3UAu膜、4HAuili、5は絶縁膜、6はp
t膜、7はAuめっきNt示す。 代理人 弁理士 内 原 晋′fJi図
Claims (1)
- 外部リード取り出し用のボンディングパッド部の電極
構造において、該ボンディングパッドが異方性エッチン
グにより粗面化された半導体基板上に設けられているこ
とを特徴とする半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61270173A JPS63124461A (ja) | 1986-11-12 | 1986-11-12 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61270173A JPS63124461A (ja) | 1986-11-12 | 1986-11-12 | 半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63124461A true JPS63124461A (ja) | 1988-05-27 |
Family
ID=17482545
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61270173A Pending JPS63124461A (ja) | 1986-11-12 | 1986-11-12 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63124461A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0260125A (ja) * | 1988-08-26 | 1990-02-28 | Fujitsu Ltd | 半導体装置 |
WO2001061804A1 (en) * | 2000-02-16 | 2001-08-23 | Nichia Corporation | Nitride semiconductor laser device |
AU2005204248B2 (en) * | 2000-02-16 | 2007-05-17 | Nichia Corporation | Nitride semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55163884A (en) * | 1979-06-06 | 1980-12-20 | Toshiba Corp | Manufacture of semiconductor light emitting element |
JPS60176231A (ja) * | 1984-02-22 | 1985-09-10 | Nec Corp | 化合物半導体素子の電極の形成方法 |
-
1986
- 1986-11-12 JP JP61270173A patent/JPS63124461A/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55163884A (en) * | 1979-06-06 | 1980-12-20 | Toshiba Corp | Manufacture of semiconductor light emitting element |
JPS60176231A (ja) * | 1984-02-22 | 1985-09-10 | Nec Corp | 化合物半導体素子の電極の形成方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0260125A (ja) * | 1988-08-26 | 1990-02-28 | Fujitsu Ltd | 半導体装置 |
WO2001061804A1 (en) * | 2000-02-16 | 2001-08-23 | Nichia Corporation | Nitride semiconductor laser device |
US6838701B2 (en) | 2000-02-16 | 2005-01-04 | Nichia Corporation | Nitride semiconductor laser device |
US7167497B2 (en) * | 2000-02-16 | 2007-01-23 | Nichia Corporation | Nitride semiconductor laser device |
AU2005204248B2 (en) * | 2000-02-16 | 2007-05-17 | Nichia Corporation | Nitride semiconductor device |
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