JPS55163884A - Manufacture of semiconductor light emitting element - Google Patents

Manufacture of semiconductor light emitting element

Info

Publication number
JPS55163884A
JPS55163884A JP7014879A JP7014879A JPS55163884A JP S55163884 A JPS55163884 A JP S55163884A JP 7014879 A JP7014879 A JP 7014879A JP 7014879 A JP7014879 A JP 7014879A JP S55163884 A JPS55163884 A JP S55163884A
Authority
JP
Japan
Prior art keywords
light emitting
electrode layer
rough surface
emitting element
semiconductor light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7014879A
Other languages
Japanese (ja)
Inventor
Tetsuo Sekiwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7014879A priority Critical patent/JPS55163884A/en
Publication of JPS55163884A publication Critical patent/JPS55163884A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To easily form an electrode layer in a semiconductor light emitting element and increase the coating strength thereof by etching the main surface of a light emitting substrate formed with a PN-junction to form a rough surface thereon and then forming an electrode layer thereon to divide it into pellets. CONSTITUTION:The main surface of GaP light emitting substrate formed with a PN-junction is etched with mixed acid solution selected arbitrarily from hydrochloric acid, nitric acid fluoric acid or the like to form rough surface thereon. This rough surface become rugged with an etching depth of several ten order microns. Then, after coating predetermined pattern of metallic electrode layer, the substrate is diced or divided by means such as scribing or the like to form pellets.
JP7014879A 1979-06-06 1979-06-06 Manufacture of semiconductor light emitting element Pending JPS55163884A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7014879A JPS55163884A (en) 1979-06-06 1979-06-06 Manufacture of semiconductor light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7014879A JPS55163884A (en) 1979-06-06 1979-06-06 Manufacture of semiconductor light emitting element

Publications (1)

Publication Number Publication Date
JPS55163884A true JPS55163884A (en) 1980-12-20

Family

ID=13423190

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7014879A Pending JPS55163884A (en) 1979-06-06 1979-06-06 Manufacture of semiconductor light emitting element

Country Status (1)

Country Link
JP (1) JPS55163884A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63122169A (en) * 1986-11-10 1988-05-26 Nec Corp Semiconductor device
JPS63124461A (en) * 1986-11-12 1988-05-27 Nec Corp Semiconductor device
WO2000041249A1 (en) * 1998-12-28 2000-07-13 Shin-Etsu Handotai Co., Ltd. Light emitting diode and its manufacturing method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63122169A (en) * 1986-11-10 1988-05-26 Nec Corp Semiconductor device
JPS63124461A (en) * 1986-11-12 1988-05-27 Nec Corp Semiconductor device
WO2000041249A1 (en) * 1998-12-28 2000-07-13 Shin-Etsu Handotai Co., Ltd. Light emitting diode and its manufacturing method

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