NL2015795A - Mask assembly. - Google Patents
Mask assembly. Download PDFInfo
- Publication number
- NL2015795A NL2015795A NL2015795A NL2015795A NL2015795A NL 2015795 A NL2015795 A NL 2015795A NL 2015795 A NL2015795 A NL 2015795A NL 2015795 A NL2015795 A NL 2015795A NL 2015795 A NL2015795 A NL 2015795A
- Authority
- NL
- Netherlands
- Prior art keywords
- pellicle
- patterning device
- pellicle frame
- frame
- mask
- Prior art date
Links
- 238000000059 patterning Methods 0.000 claims abstract description 677
- 230000005855 radiation Effects 0.000 claims description 154
- 239000000758 substrate Substances 0.000 claims description 56
- 238000005286 illumination Methods 0.000 claims description 20
- 238000001459 lithography Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 59
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- 230000033001 locomotion Effects 0.000 description 126
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- 210000003128 head Anatomy 0.000 description 112
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- 229910052746 lanthanum Inorganic materials 0.000 description 8
- 229910052758 niobium Inorganic materials 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
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- 230000008602 contraction Effects 0.000 description 7
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- 229910052707 ruthenium Inorganic materials 0.000 description 7
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 239000000446 fuel Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000009304 pastoral farming Methods 0.000 description 5
- WEAMLHXSIBDPGN-UHFFFAOYSA-N (4-hydroxy-3-methylphenyl) thiocyanate Chemical compound CC1=CC(SC#N)=CC=C1O WEAMLHXSIBDPGN-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
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- 229910021355 zirconium silicide Inorganic materials 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
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- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
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- 238000002955 isolation Methods 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
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- 229910021332 silicide Inorganic materials 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
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- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
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- 150000002500 ions Chemical class 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
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- 125000000467 secondary amino group Chemical class [H]N([*:1])[*:2] 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910021428 silicene Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- -1 trimethoxy silane secondary amine Chemical class 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
- G03F1/64—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material, including bonding means therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Regulation And Control Of Combustion (AREA)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201462080561P | 2014-11-17 | 2014-11-17 | |
| US201562108348P | 2015-01-27 | 2015-01-27 | |
| US201562110841P | 2015-02-02 | 2015-02-02 | |
| US201562126173P | 2015-02-27 | 2015-02-27 | |
| US201562149176P | 2015-04-17 | 2015-04-17 | |
| US201562183342P | 2015-06-23 | 2015-06-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL2015795A true NL2015795A (en) | 2016-09-06 |
Family
ID=54542272
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL2015796A NL2015796A (en) | 2014-11-17 | 2015-11-16 | Apparatus. |
| NL2015795A NL2015795A (en) | 2014-11-17 | 2015-11-16 | Mask assembly. |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL2015796A NL2015796A (en) | 2014-11-17 | 2015-11-16 | Apparatus. |
Country Status (9)
| Country | Link |
|---|---|
| US (5) | US10558129B2 (enExample) |
| EP (4) | EP4296778A3 (enExample) |
| JP (10) | JP6769954B2 (enExample) |
| KR (7) | KR102634793B1 (enExample) |
| CN (5) | CN115840333A (enExample) |
| CA (4) | CA3177744A1 (enExample) |
| NL (2) | NL2015796A (enExample) |
| TW (4) | TWI724622B (enExample) |
| WO (2) | WO2016079051A2 (enExample) |
Families Citing this family (75)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4296778A3 (en) | 2014-11-17 | 2024-03-27 | ASML Netherlands B.V. | Mask assembly |
| EP3391138A1 (en) | 2015-12-14 | 2018-10-24 | ASML Netherlands B.V. | A membrane for euv lithography |
| EP3391140A1 (en) * | 2015-12-14 | 2018-10-24 | ASML Netherlands B.V. | A membrane assembly |
| KR102186010B1 (ko) * | 2016-01-26 | 2020-12-04 | 한양대학교 산학협력단 | Euv 펠리클 구조체, 및 그 제조 방법 |
| KR102719334B1 (ko) | 2016-04-25 | 2024-10-21 | 에이에스엠엘 네델란즈 비.브이. | Euv 리소그래피를 위한 멤브레인 |
| EP3483655A4 (en) * | 2016-07-05 | 2020-02-26 | Mitsui Chemicals, Inc. | FILM FILM, FILM FRAME, FILM, PRODUCTION METHOD THEREOF, ORIGINAL PLATE FOR LIGHT EXPOSURE, LIGHT EXPOSURE APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
| KR102483397B1 (ko) * | 2016-07-29 | 2022-12-29 | 에이에스엠엘 홀딩 엔.브이. | 멤브레인 조립체 및 입자 트랩 |
| JP6607574B2 (ja) * | 2016-08-24 | 2019-11-20 | 信越化学工業株式会社 | ペリクルフレーム及びペリクル |
| KR101848153B1 (ko) * | 2016-09-12 | 2018-05-29 | 한양대학교 산학협력단 | 마스크 보호 모듈, 이를 포함하는 펠리클, 및 이를 포함하는 리소그래피 장치 |
| CN110325908A (zh) | 2017-02-17 | 2019-10-11 | 三井化学株式会社 | 防护膜组件、曝光原版、曝光装置及半导体装置的制造方法 |
| US11183410B2 (en) * | 2017-04-24 | 2021-11-23 | Photronics, Inc. | Pellicle removal tool |
| CN110809736B (zh) | 2017-06-15 | 2023-10-24 | Asml荷兰有限公司 | 表膜和表膜组件 |
| US11143952B2 (en) | 2017-09-28 | 2021-10-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pellicle removal method |
| US11314163B2 (en) * | 2017-10-27 | 2022-04-26 | Asml Netherlands B.V. | Pellicle frame and pellicle assembly |
| US11106127B2 (en) | 2017-11-08 | 2021-08-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Structure of pellicle-mask structure with vent structure |
| KR20200087774A (ko) * | 2017-11-21 | 2020-07-21 | 에이에스엠엘 네델란즈 비.브이. | 다공성 그래파이트 펠리클 |
| JP6921412B2 (ja) * | 2018-01-25 | 2021-08-18 | 株式会社ブイ・テクノロジー | ペリクルフレーム把持装置及びペリクルフレーム把持方法 |
| PL3530511T3 (pl) * | 2018-02-27 | 2020-11-16 | Joseph Vögele AG | Sposób rekonfiguracji układu operacyjnego dla maszyny budowlanej |
| WO2019172141A1 (ja) * | 2018-03-05 | 2019-09-12 | 三井化学株式会社 | ペリクル、露光原版、露光装置、及び半導体装置の製造方法 |
| JP7019472B2 (ja) * | 2018-03-22 | 2022-02-15 | 三井化学株式会社 | カーボンナノチューブ自立膜の製造方法、およびペリクルの製造方法 |
| JP7061494B2 (ja) * | 2018-03-28 | 2022-04-28 | 三井化学株式会社 | 検査方法、ペリクルの製造方法、および検査装置 |
| CA3105488A1 (en) | 2018-07-04 | 2020-01-09 | Asml Netherlands B.V. | Apparatus for positioning and clamped curing |
| CN108950475B (zh) * | 2018-07-25 | 2020-11-10 | 京东方科技集团股份有限公司 | 张网结构、张网装置及张网方法 |
| US11016383B2 (en) * | 2018-08-31 | 2021-05-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Pellicle for an EUV lithography mask and a method of manufacturing thereof |
| WO2020064217A1 (en) | 2018-09-28 | 2020-04-02 | Asml Netherlands B.V. | Lithographic system and method |
| NL2024075B1 (en) | 2018-11-16 | 2020-08-19 | Asml Netherlands Bv | A pellicle for euv lithography |
| KR102243367B1 (ko) * | 2018-11-30 | 2021-04-23 | 한양대학교 산학협력단 | 펠리클 홀더, 펠리클 검사 장치, 및 펠리클 검사 방법 |
| US11137693B2 (en) * | 2018-11-30 | 2021-10-05 | Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University) | Pellicle holder, pellicle inspection apparatus, and pellicle inspection method |
| KR20240104185A (ko) * | 2018-12-10 | 2024-07-04 | 어플라이드 머티어리얼스, 인코포레이티드 | 극자외선 리소그래피 애플리케이션에서 포토마스크로부터의 부착 피처 제거 |
| EP3671342B1 (en) * | 2018-12-20 | 2021-03-17 | IMEC vzw | Induced stress for euv pellicle tensioning |
| KR102172722B1 (ko) | 2018-12-26 | 2020-11-02 | 주식회사 에프에스티 | 초극자외선 리소그라피용 펠리클의 검사에 사용되는 캡슐 |
| KR20200088528A (ko) | 2019-01-14 | 2020-07-23 | 주식회사 에프에스티 | 펠리클 장착 시스템, 스터드 부착 장치, 펠리클 부착 장치 및 펠리클 부착 방법 |
| KR20200088529A (ko) | 2019-01-14 | 2020-07-23 | 주식회사 에프에스티 | 초극자외선 리소그라피용 펠리클 검사 시스템 |
| WO2020173892A2 (en) | 2019-02-28 | 2020-09-03 | Asml Netherlands B.V. | Apparatus for assembly of a reticle assembly |
| CN113557475B (zh) * | 2019-03-13 | 2024-09-17 | Asml控股股份有限公司 | 用于光刻设备的静电夹具 |
| CN113646697A (zh) | 2019-04-12 | 2021-11-12 | Asml荷兰有限公司 | 用于euv光刻的表膜 |
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