JP5382412B2 - 露光装置及びフォトマスク - Google Patents
露光装置及びフォトマスク Download PDFInfo
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- JP5382412B2 JP5382412B2 JP2008273863A JP2008273863A JP5382412B2 JP 5382412 B2 JP5382412 B2 JP 5382412B2 JP 2008273863 A JP2008273863 A JP 2008273863A JP 2008273863 A JP2008273863 A JP 2008273863A JP 5382412 B2 JP5382412 B2 JP 5382412B2
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Liquid Crystal (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
先ず、例えばキーボード等から成る図示省略の操作手段を操作してステージ9の移動速度V、露光開始から露光終了までのステージ9の移動距離、光源21のパワー及び発光時間、フォトマスク3の第1の電極配線パターン列15と覗き窓11との間の距離D、TFT用基板8上に形成された薄膜トランジスタ形成部の矢印A方向(搬送方向)の配列ピッチL、TFT用基板8の上記薄膜トランジスタ形成部に予め設定された基準位置とフォトマスク3に形成された基準マークとの間の距離の目標値等を入力してメモリ28に保存し、初期設定を行う。
3…フォトマスク
8…TFT用基板
12…透明基板
12a…一方の面
12b…他方の面
13…クロム(Cr)膜(遮光膜)
14…電極配線パターン(第1のマスクパターン)
15…電極配線パターン列(マスクパターン列)
15a…第1の電極配線パターン列
15b…第2の電極配線パターン列
15c…第3の電極配線パターン列
15d…第4の電極配線パターン列
16…電極配線パターン群(第1のマスクパターン群)
17…信号配線パターン(第2のマスクパターン)
18…信号配線パターン群(第2のマスクパターン群)
19…マイクロレンズ
21…光源
24…光源光
34…露光光
35,35a〜35d…電極配線パターンの露光パターン
36…信号配線パターンの露光パターン
Claims (5)
- 被露光体を一方向に一定速度で搬送しながら、フォトマスクを介して搬送中の前記被露光体に光源光を間欠的に照射し、前記フォトマスクに形成された複数のマスクパターンに対応して前記被露光体上に解像力の異なる2種類の露光パターンを同時に形成する露光装置であって、
前記フォトマスクは、透明基板の一面に形成された遮光膜に、相対的に要求解像力の高い第1のマスクパターンかならなる第1のマスクパターン群と、要求解像力の低い第2のマスクパターンからなる第2のマスクパターン群とを前記被露光体の搬送方向に先後して形成し、他面には、前記第1のマスクパターンに対応して該第1のマスクパターンを前記被露光体上に縮小投影するマイクロレンズを形成し、該マイクロレンズ側が前記被露光体側となるように配置され、
前記搬送中の前記被露光体に対して前記第1のマスクパターン群を使用して投影露光すると共に、前記第2のマスクパターン群を使用して近接露光する構成としたことを特徴とする露光装置。 - 前記第1のマスクパターン群は、前記被露光体の搬送方向に略直交する方向に複数の前記第1のマスクパターンを所定ピッチで一直線状に並べて形成した複数のマスクパターン列を備え、前記被露光体の搬送方向先頭側に位置する前記マスクパターン列により形成される複数の露光パターンの間を後続のマスクパターン列により形成される複数の露光パターンにより補完可能に、前記後続のマスクパターン列を複数の前記第1のマスクパターンの前記並び方向に夫々所定寸法だけずらして形成したものであることを特徴とする請求項1記載の露光装置。
- 前記被露光体は、液晶表示装置のTFT用基板であり、
前記第1のマスクパターンは、薄膜トランジスタの電極配線パターンで、前記第2のマスクパターンは、前記薄膜トランジスタに信号を供給する信号配線パターンであり、
前記電極配線パターンの露光パターンと前記信号配線パターンの露光パターンとが互いに接続するように前記電極配線パターンと前記信号配線パターンとを形成したことを特徴とする請求項2記載の露光装置。 - 被露光体を一方向に一定速度で搬送しながら、フォトマスクを介して搬送中の前記被露光体に光源光を間欠的に照射し、前記フォトマスクに形成された複数のマスクパターンに対応して前記被露光体上に解像力の異なる2種類の露光パターンを同時に形成するためのフォトマスクであって、
透明基板の一面に形成された遮光膜に、相対的に要求解像力の高い第1のマスクパターンかならなる第1のマスクパターン群と、要求解像力の低い第2のマスクパターンからなる第2のマスクパターン群とを横に並べて形成し、他面には、前記第1のマスクパターンに対応して、該第1のマスクパターンを対向して配置される前記被露光体上に縮小投影するマイクロレンズを形成し、前記被露光体に対して前記第1のマスクパターン群を使用して投影露光すると共に、前記第2のマスクパターン群を使用して近接露光し得るようにしたことを特徴とするフォトマスク。 - 前記第1のマスクパターン群は、複数の前記第1のマスクパターンを所定ピッチで一直線状に並べて形成した複数のマスクパターン列を備え、任意の一つのマスクパターン列に対して他のマスクパターン列を複数の前記第1のマスクパターンの前記並び方向に夫々所定寸法だけずらして形成したものであることを特徴とする請求項4記載のフォトマスク。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008273863A JP5382412B2 (ja) | 2008-10-24 | 2008-10-24 | 露光装置及びフォトマスク |
CN200980142622.5A CN102197340B (zh) | 2008-10-24 | 2009-10-22 | 曝光装置和光掩膜 |
PCT/JP2009/068165 WO2010047362A1 (ja) | 2008-10-24 | 2009-10-22 | 露光装置及びフォトマスク |
KR1020117011611A KR101650113B1 (ko) | 2008-10-24 | 2009-10-22 | 노광 장치 및 포토마스크 |
TW98135964A TWI467345B (zh) | 2008-10-24 | 2009-10-23 | 曝光裝置及光罩 |
US13/091,774 US8854600B2 (en) | 2008-10-24 | 2011-04-21 | Exposure apparatus and photomask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008273863A JP5382412B2 (ja) | 2008-10-24 | 2008-10-24 | 露光装置及びフォトマスク |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010102149A JP2010102149A (ja) | 2010-05-06 |
JP5382412B2 true JP5382412B2 (ja) | 2014-01-08 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008273863A Expired - Fee Related JP5382412B2 (ja) | 2008-10-24 | 2008-10-24 | 露光装置及びフォトマスク |
Country Status (6)
Country | Link |
---|---|
US (1) | US8854600B2 (ja) |
JP (1) | JP5382412B2 (ja) |
KR (1) | KR101650113B1 (ja) |
CN (1) | CN102197340B (ja) |
TW (1) | TWI467345B (ja) |
WO (1) | WO2010047362A1 (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102597881B (zh) * | 2009-11-12 | 2015-07-08 | 株式会社V技术 | 曝光装置及其使用的光掩模 |
JP5376379B2 (ja) * | 2010-08-30 | 2013-12-25 | 株式会社ブイ・テクノロジー | マイクロレンズアレイを使用した露光装置及び光学部材 |
JP5747303B2 (ja) * | 2010-11-12 | 2015-07-15 | 株式会社ブイ・テクノロジー | 露光装置 |
CN103189799B (zh) * | 2010-12-03 | 2016-04-27 | 夏普株式会社 | 显示面板用基板和基板曝光方法 |
JP5704535B2 (ja) * | 2011-04-05 | 2015-04-22 | 株式会社ブイ・テクノロジー | マイクロレンズアレイを使用した露光装置 |
JP5825470B2 (ja) * | 2011-05-16 | 2015-12-02 | 株式会社ブイ・テクノロジー | 露光装置及び遮光板 |
CN102854753A (zh) * | 2011-06-02 | 2013-01-02 | 恩斯克科技有限公司 | 曝光装置和曝光方法 |
US9297642B2 (en) * | 2011-08-10 | 2016-03-29 | V Technology Co., Ltd. | Alignment device for exposure device, and alignment mark |
TWI632400B (zh) * | 2011-11-16 | 2018-08-11 | 成洛勳 | 線光源發生裝置及其柱狀透鏡板系統 |
JP5842251B2 (ja) * | 2012-01-06 | 2016-01-13 | 株式会社ブイ・テクノロジー | 露光装置及び露光済み材製造方法 |
CN102981372A (zh) * | 2012-11-19 | 2013-03-20 | 成都泛华航空仪表电器有限公司 | 管状表面布线电路导电图案智能曝光系统 |
NL2015795A (en) | 2014-11-17 | 2016-09-06 | Asml Netherlands Bv | Mask assembly. |
JP6940873B2 (ja) * | 2017-12-08 | 2021-09-29 | 株式会社ブイ・テクノロジー | 露光装置および露光方法 |
US10739675B2 (en) * | 2018-05-31 | 2020-08-11 | Canon Kabushiki Kaisha | Systems and methods for detection of and compensation for malfunctioning droplet dispensing nozzles |
KR102187272B1 (ko) | 2019-04-10 | 2020-12-04 | 삼일테크(주) | 기울임 회전 노광 방식의 3d 마이크로 리소그래피-프린터 시스템 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0320733A (ja) * | 1989-06-16 | 1991-01-29 | Matsushita Electron Corp | ホトマスク |
JPH06148861A (ja) * | 1992-11-13 | 1994-05-27 | Sharp Corp | フォトマスク及びその製造方法 |
JP3374875B2 (ja) * | 1994-06-21 | 2003-02-10 | 三菱電機株式会社 | 半導体写真製版装置及びそれを用いて形成された微細パターン |
JPH11111601A (ja) * | 1997-10-06 | 1999-04-23 | Nikon Corp | 露光方法及び装置 |
US6016185A (en) * | 1997-10-23 | 2000-01-18 | Hugle Lithography | Lens array photolithography |
JP2001176773A (ja) * | 1999-12-15 | 2001-06-29 | Yamaha Corp | レジストパターン形成法 |
JP4373731B2 (ja) * | 2003-07-22 | 2009-11-25 | 富士フイルム株式会社 | 描画装置及び描画方法 |
JP2006003419A (ja) * | 2004-06-15 | 2006-01-05 | Advanced Lcd Technologies Development Center Co Ltd | 露光方法、露光装置およびフォトマスク |
CN1721996A (zh) * | 2004-06-17 | 2006-01-18 | 富士胶片株式会社 | 描绘装置及描绘方法 |
US7884921B2 (en) * | 2006-04-12 | 2011-02-08 | Nikon Corporation | Illumination optical apparatus, projection exposure apparatus, projection optical system, and device manufacturing method |
JP2008076709A (ja) | 2006-09-21 | 2008-04-03 | V Technology Co Ltd | 露光装置 |
-
2008
- 2008-10-24 JP JP2008273863A patent/JP5382412B2/ja not_active Expired - Fee Related
-
2009
- 2009-10-22 WO PCT/JP2009/068165 patent/WO2010047362A1/ja active Application Filing
- 2009-10-22 KR KR1020117011611A patent/KR101650113B1/ko active IP Right Grant
- 2009-10-22 CN CN200980142622.5A patent/CN102197340B/zh not_active Expired - Fee Related
- 2009-10-23 TW TW98135964A patent/TWI467345B/zh not_active IP Right Cessation
-
2011
- 2011-04-21 US US13/091,774 patent/US8854600B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
WO2010047362A1 (ja) | 2010-04-29 |
TW201027268A (en) | 2010-07-16 |
KR101650113B1 (ko) | 2016-08-30 |
KR20110074623A (ko) | 2011-06-30 |
CN102197340B (zh) | 2014-01-22 |
CN102197340A (zh) | 2011-09-21 |
JP2010102149A (ja) | 2010-05-06 |
US8854600B2 (en) | 2014-10-07 |
TWI467345B (zh) | 2015-01-01 |
US20110194095A1 (en) | 2011-08-11 |
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