KR870007562A - 표면 처리 방법 - Google Patents

표면 처리 방법 Download PDF

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KR870007562A
KR870007562A KR870000364A KR870000364A KR870007562A KR 870007562 A KR870007562 A KR 870007562A KR 870000364 A KR870000364 A KR 870000364A KR 870000364 A KR870000364 A KR 870000364A KR 870007562 A KR870007562 A KR 870007562A
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workpiece
target
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semiconductor
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KR870000364A
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KR940000915B1 (ko
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신이지 다지
사다유기 오구다이라
가즈노리 쯔지모다
기이지로우 무가이
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미쓰다 가쓰시게
가부시기가이샤 히다찌세이사꾸쇼
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Priority claimed from JP61018017A external-priority patent/JPH088234B2/ja
Priority claimed from JP61102028A external-priority patent/JPS62260327A/ja
Priority claimed from JP61133651A external-priority patent/JPS62291030A/ja
Application filed by 미쓰다 가쓰시게, 가부시기가이샤 히다찌세이사꾸쇼 filed Critical 미쓰다 가쓰시게
Publication of KR870007562A publication Critical patent/KR870007562A/ko
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Publication of KR940000915B1 publication Critical patent/KR940000915B1/ko

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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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Abstract

내용 없음

Description

표면 처리 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도와 제 2 도는 본 발명의 구성을 설명하기 위한 모식도.

Claims (10)

  1. 이온 비임을 타겟의 표면에 입사하여 산란시켜, 산란 입자선을 피가공물의 표면에 입사시키는 것에 의해, 상기 가공물의 표면의 에칭 혹은 개질, 혹은 상기 가공물 표면 위로의 막의 퇴적을 행하는 표면 처리 방법.
  2. 특허청구의 범위 제 1 항에 있어서, 상기 이온 비임의 이온 에너지는 1-10KeV이다.
  3. 특허청구의 범위 제 1 항에 있어서, 상기 이온은 He+, Ne+, Ar+, Kr+, Xe+, F+, Cl+, Br+, CCln+, CFn+, CBrn+, BCln+, SFm+(단, n=1-3, m=1-6), N2+, O+, O2+, C+, CHn+(단, n=1-3), Co+, Co2+ 및 Si+로 되는 군에서 선택된 적어도 1종류이다.
  4. 특허청구의 범위 제 1 항에 있어서, 상기 타겟은 금속, 이들 금속의 합금 혹은 반도체이다.
  5. 특허청구의 범위 제 4 항에 있어서, 상기 금속은 W, Mo, Ti, Fe, Ni, Al, Cu 혹은 Cr로 되는 군에서 선택된다.
  6. 특허청구의 범위 제 4 항에 있어서, 상기 반도체는 Si 혹은 Ge이다.
  7. 특허청구의 범위 제 1 항에 있어서, 상기 타겟의 표면 위에서 할로겐 원자를 포함하는 유기 박막이 형성되어 있다.
  8. 특허청구의 범위 제 7 항에 있어서, 상기 유기 박막은 폴리테트라 프루오로에틸렌, 폴리클로로 트라이프루오로에틸렌, 테트라 프루오로에틸렌과 헥서프루오로 프로피렌의 공중합체 혹은 폴리비닐프루오라이드로 되는 군에서 선택된 재료로 된다.
  9. 특허청구의 범위 제 1 항에 있어서, 상기 이온 비임은 냉각된 상기 타켓으로 입사된다.
  10. 특허청구의 범위 제 1 항에 있어서, 상기 산란 입자선은 상기 피가공물의 소정 영역에서 선택적으로 입사된다.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870000364A 1986-01-31 1987-01-19 표면 처리방법 KR940000915B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP61018017A JPH088234B2 (ja) 1986-01-31 1986-01-31 表面処理方法
JP61-18017 1986-01-31
JP61102028A JPS62260327A (ja) 1986-05-06 1986-05-06 表面処理装置および表面処理方法
JP61-102028 1986-05-06
JP61133651A JPS62291030A (ja) 1986-06-11 1986-06-11 表面処理装置
JP61-133651 1986-06-11

Related Child Applications (2)

Application Number Title Priority Date Filing Date
KR1019940016157A Division KR960009822A (ko) 1986-01-31 1994-07-06 대전방지방법 및 대전방지용 이온 빔장치
KR1019940016158A Division KR960009823A (ko) 1986-01-31 1994-07-06 에칭방법

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Publication Number Publication Date
KR870007562A true KR870007562A (ko) 1987-08-20
KR940000915B1 KR940000915B1 (ko) 1994-02-04

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KR1019870000364A KR940000915B1 (ko) 1986-01-31 1987-01-19 표면 처리방법
KR1019940016157A KR960009822A (ko) 1986-01-31 1994-07-06 대전방지방법 및 대전방지용 이온 빔장치
KR1019940016158A KR960009823A (ko) 1986-01-31 1994-07-06 에칭방법

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KR1019940016157A KR960009822A (ko) 1986-01-31 1994-07-06 대전방지방법 및 대전방지용 이온 빔장치
KR1019940016158A KR960009823A (ko) 1986-01-31 1994-07-06 에칭방법

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US4857137A (en) 1989-08-15
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KR960009823A (ko) 1996-03-22

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