KR20140082852A - 반도체 발광 소자 - Google Patents

반도체 발광 소자 Download PDF

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Publication number
KR20140082852A
KR20140082852A KR1020147014333A KR20147014333A KR20140082852A KR 20140082852 A KR20140082852 A KR 20140082852A KR 1020147014333 A KR1020147014333 A KR 1020147014333A KR 20147014333 A KR20147014333 A KR 20147014333A KR 20140082852 A KR20140082852 A KR 20140082852A
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KR
South Korea
Prior art keywords
layer
light
light emitting
sapphire substrate
mask
Prior art date
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Ceased
Application number
KR1020147014333A
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English (en)
Korean (ko)
Inventor
사또시 가미야마
모또아끼 이와야
히로시 아마노
이사무 아까사끼
도시유끼 곤도
후미하루 데라마에
쯔까사 기따노
아쯔시 스즈끼
Original Assignee
엘시드 가부시끼가이샤
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Application filed by 엘시드 가부시끼가이샤 filed Critical 엘시드 가부시끼가이샤
Publication of KR20140082852A publication Critical patent/KR20140082852A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials

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  • Led Devices (AREA)
KR1020147014333A 2009-09-07 2010-08-23 반도체 발광 소자 Ceased KR20140082852A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2009-205931 2009-09-07
JP2009205931 2009-09-07
PCT/JP2010/064154 WO2011027679A1 (ja) 2009-09-07 2010-08-23 半導体発光素子

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020127006037A Division KR101417541B1 (ko) 2009-09-07 2010-08-23 반도체 발광 소자

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020177023492A Division KR20170102364A (ko) 2009-09-07 2010-08-23 반도체 발광 소자

Publications (1)

Publication Number Publication Date
KR20140082852A true KR20140082852A (ko) 2014-07-02

Family

ID=43649218

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020147014333A Ceased KR20140082852A (ko) 2009-09-07 2010-08-23 반도체 발광 소자
KR1020177023492A Withdrawn KR20170102364A (ko) 2009-09-07 2010-08-23 반도체 발광 소자
KR1020127006037A Expired - Fee Related KR101417541B1 (ko) 2009-09-07 2010-08-23 반도체 발광 소자

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020177023492A Withdrawn KR20170102364A (ko) 2009-09-07 2010-08-23 반도체 발광 소자
KR1020127006037A Expired - Fee Related KR101417541B1 (ko) 2009-09-07 2010-08-23 반도체 발광 소자

Country Status (8)

Country Link
US (2) US8941136B2 (enExample)
EP (2) EP3293775A1 (enExample)
JP (6) JP4768894B2 (enExample)
KR (3) KR20140082852A (enExample)
CN (2) CN104600167B (enExample)
ES (1) ES2663320T3 (enExample)
HK (1) HK1207742A1 (enExample)
WO (1) WO2011027679A1 (enExample)

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Also Published As

Publication number Publication date
JP5913664B2 (ja) 2016-04-27
KR20120068857A (ko) 2012-06-27
JP2016146502A (ja) 2016-08-12
JPWO2011027679A1 (ja) 2013-02-04
US20120228656A1 (en) 2012-09-13
EP2477238A1 (en) 2012-07-18
CN102484183A (zh) 2012-05-30
JP6410751B2 (ja) 2018-10-24
JP5706862B2 (ja) 2015-04-22
JP2011176379A (ja) 2011-09-08
KR20170102364A (ko) 2017-09-08
KR101417541B1 (ko) 2014-07-08
CN104600167A (zh) 2015-05-06
EP2477238B1 (en) 2017-12-20
ES2663320T3 (es) 2018-04-12
CN104600167B (zh) 2017-12-12
JP4768894B2 (ja) 2011-09-07
JP2015099939A (ja) 2015-05-28
HK1207742A1 (en) 2016-02-05
JP2013042162A (ja) 2013-02-28
JP2018198340A (ja) 2018-12-13
EP3293775A1 (en) 2018-03-14
US20150091039A1 (en) 2015-04-02
EP2477238A4 (en) 2015-03-11
CN102484183B (zh) 2015-01-14
JP5126800B2 (ja) 2013-01-23
US8941136B2 (en) 2015-01-27
WO2011027679A1 (ja) 2011-03-10

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