KR20090019886A - 반도체 장치 제조 방법 - Google Patents
반도체 장치 제조 방법 Download PDFInfo
- Publication number
- KR20090019886A KR20090019886A KR1020090007054A KR20090007054A KR20090019886A KR 20090019886 A KR20090019886 A KR 20090019886A KR 1020090007054 A KR1020090007054 A KR 1020090007054A KR 20090007054 A KR20090007054 A KR 20090007054A KR 20090019886 A KR20090019886 A KR 20090019886A
- Authority
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- South Korea
- Prior art keywords
- semiconductor film
- laser
- laser beam
- film
- impurity element
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
- B23K26/0608—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams in the same heat affected zone [HAZ]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/073—Shaping the laser spot
- B23K26/0732—Shaping the laser spot into a rectangular shape
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/073—Shaping the laser spot
- B23K26/0736—Shaping the laser spot into an oval shape, e.g. elliptic shape
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/073—Shaping the laser spot
- B23K26/0738—Shaping the laser spot into a linear shape
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02592—Microstructure amorphous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H—ELECTRICITY
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Abstract
Description
Claims (14)
- 반도체 장치 제조 방법으로서,기판 위에 반도체 막을 형성하는 단계와,상기 반도체 막과 제 1 레이저빔이 상대적으로 이동되는 동안 상기 제 1 레이저빔을 상기 반도체 막에 조사함으로써 상기 반도체 막을 결정화하는 단계와,상기 결정화된 반도체 막에 불순물 원소를 첨가하는 단계와,상기 불순물 원소가 첨가된 상기 반도체 막과 제 2 레이저빔이 상대적으로 이동되는 동안 상기 제 2 레이저빔을 상기 반도체 막에 조사함으로써 상기 불순물 원소를 활성화하는 단계를 포함하며,상기 제 1 레이저빔 및 상기 제 2 레이저빔 각각의 형상이 상기 반도체 막에서 선형 형상으로 되도록, 볼록 렌즈를 통해 진행되는 상기 제 1 레이저빔 및 상기 제 2 레이저빔 각각의 상기 형상이 변형되는, 반도체 장치 제조 방법.
- 반도체 장치 제조 방법으로서,기판 위에 반도체 막을 형성하는 단계와,상기 반도체 막과 제 1 레이저빔이 상대적으로 이동되는 동안 상기 제 1 레이저빔을 상기 반도체 막에 조사함으로써 상기 반도체 막을 결정화하는 단계와,상기 결정화된 반도체 막에 불순물 원소를 첨가하는 단계와,상기 불순물 원소가 첨가된 상기 반도체 막과 제 2 레이저빔이 상대적으로 이동되는 동안 상기 제 2 레이저빔을 상기 반도체 막에 조사함으로써 상기 불순물 원소를 활성화하는 단계를 포함하며,상기 제 1 레이저빔 및 상기 제 2 레이저빔 각각의 형상이 상기 반도체 막에서 선형 형상으로 되도록, 볼록 렌즈를 통해 진행되는 상기 제 1 레이저빔 및 상기 제 2 레이저빔 각각의 상기 형상이 변형되고,상기 볼록 렌즈를 통해 진행되는 상기 제 1 레이저빔 및 상기 제 2 레이저빔 각각은 상기 반도체 막에 대해 경사지게 입사되는, 반도체 장치 제조 방법.
- 반도체 장치 제조 방법으로서,기판 위에 반도체 막을 형성하는 단계와,상기 반도체 막과 제 1 레이저빔이 상대적으로 이동되는 동안 상기 제 1 레이저빔을 상기 반도체 막에 조사함으로써 상기 반도체 막을 결정화하는 단계와,상기 결정화된 반도체 막에 불순물 원소를 첨가하는 단계와,상기 불순물 원소가 첨가된 상기 반도체 막과 제 2 레이저빔이 상대적으로 이동되는 동안 상기 제 2 레이저빔을 상기 반도체 막에 조사함으로써 상기 불순물 원소를 활성화하는 단계를 포함하며,상기 제 1 레이저빔 및 상기 제 2 레이저빔 각각의 형상이 상기 반도체 막에서 선형 형상으로 되도록, 볼록 렌즈를 통해 진행되는 상기 제 1 레이저빔 및 상기 제 2 레이저빔 각각의 상기 형상은 변형되고,상기 볼록 렌즈를 통해 진행되는 상기 제 1 레이저빔 및 상기 제 2 레이저빔 각각은 상기 반도체 막에 대해 경사지게 입사되며,상기 반도체 막에 입사하는 상기 제 1 레이저빔 및 상기 제 2 레이저빔 각각의 빔 폭 w와, 상기 기판의 두께 d와, 상기 제 1 레이저빔 및 상기 제 2 레이저빔 각각이 상기 반도체 막에 대해 입사되는 상기 제 1 레이저빔 및 상기 제 2 레이저빔 각각의 입사각 θ는 다음 식 θ≥arctan (w / (2 ×d))을 충족시키는, 반도체 장치 제조 방법.
- 반도체 장치 제조 방법으로서,기판 위에 반도체 막을 형성하는 단계와,상기 반도체 막과 제 1 레이저빔이 상대적으로 이동되는 동안 상기 제 1 레이저빔을 상기 반도체 막에 조사함으로써 상기 반도체 막을 결정화하는 단계와,상기 결정화된 반도체 막에 불순물 원소를 첨가하는 단계와,상기 불순물 원소가 첨가된 상기 반도체 막과 제 2 레이저빔이 상대적으로 이동되는 동안 상기 제 2 레이저빔을 상기 반도체 막에 조사함으로써 상기 불순물 원소를 활성화하는 단계를 포함하며,상기 제 1 레이저빔 및 상기 제 2 레이저빔 각각의 형상이 상기 반도체 막에서 선형 형상으로 되도록, 회절 격자(diffractive grating)를 통해 진행되는 상기 제 1 레이저빔 및 상기 제 2 레이저빔 각각의 상기 형상이 변형되는, 반도체 장치 제조 방법.
- 반도체 장치 제조 방법으로서,기판 위에 반도체 막을 형성하는 단계와,상기 반도체 막과 제 1 레이저빔이 상대적으로 이동되는 동안 상기 제 1 레이저빔을 상기 반도체 막에 조사함으로써 상기 반도체 막을 결정화하는 단계와,상기 결정화된 반도체 막에 불순물 원소를 첨가하는 단계와,상기 불순물 원소가 첨가된 상기 반도체 막과 제 2 레이저빔이 상대적으로 이동되는 동안 상기 제 2 레이저빔을 상기 반도체 막에 조사함으로써 상기 불순물 원소를 활성화하는 단계를 포함하며,상기 제 1 레이저빔 및 상기 제 2 레이저빔 각각의 형상이 상기 반도체 막에서 선형 형상으로 되도록, 회절 격자를 통해 진행되는 상기 제 1 레이저빔 및 상기 제 2 레이저빔 각각의 상기 형상이 변형되고,상기 회절 격자를 통해 진행되는 상기 제 1 레이저빔 및 상기 제 2 레이저빔 각각은 상기 반도체 막에 대해 경사지게 입사되는, 반도체 장치 제조 방법.
- 반도체 장치 제조 방법으로서,기판 위에 반도체 막을 형성하는 단계와,상기 반도체 막과 제 1 레이저빔이 상대적으로 이동되는 동안 상기 제 1 레이저빔을 상기 반도체 막에 조사함으로써 상기 반도체 막을 결정화하는 단계와,상기 결정화된 반도체 막에 불순물 원소를 첨가하는 단계와,상기 불순물 원소가 첨가된 상기 반도체 막과 제 2 레이저빔이 상대적으로 이동되는 동안 상기 제 2 레이저빔을 상기 반도체 막에 조사함으로써 상기 불순물 원소를 활성화하는 단계를 포함하며,상기 제 1 레이저빔 및 상기 제 2 레이저빔 각각의 형상이 상기 반도체 막에서 선형 형상으로 되도록, 회절 격자를 통해 진행되는 상기 제 1 레이저빔 및 상기 제 2 레이저빔 각각의 상기 형상이 변형되고,상기 회절 격자를 통해 진행되는 상기 제 1 레이저빔 및 상기 제 2 레이저빔 각각은 상기 반도체 막에 대해 경사지게 입사되며,상기 반도체 막에 입사하는 상기 레이저빔의 빔 폭 w와, 및 상기 기판의 두께 d와, 상기 제 1 레이저빔 및 상기 제 2 레이저빔 각각이 상기 반도체 막에 대해 입사되는 상기 제 1 레이저빔 및 상기 제 2 레이저빔 각각의 입사각 θ는 다음 식 θ≥arctan (w / (2 ×d))을 충족시키는, 반도체 장치 제조 방법.
- 제 1 항 내지 제 6 항 중 어느 한 항에 있어서,상기 볼록 렌즈로서, 비구면 렌즈가 사용되는, 반도체 장치 제조 방법.
- 제 1 항 내지 제 6 항 중 어느 한 항에 있어서,상기 제 1 레이저빔은 연속 발진 또는 펄스 발진의 고체 레이저, 가스 레이저 또는 금속 레이저로부터 발진되는, 반도체 장치 제조 방법.
- 제 1 항 내지 제 6 항 중 어느 한 항에 있어서,상기 제 1 레이저빔은 연속 발진 또는 펄스 발진의 YAG 레이저, YVO4 레이저, YLF 레이저, YAl03 레이저, 유리 레이저, 루비 레이저, 알렉산드라이트 레이저, Ti:사파이어 레이저로부터 선택된 하나의 레이저로부터 발진되는, 반도체 장치 제조 방법.
- 제 1 항 내지 제 6 항 중 어느 한 항에 있어서,상기 제 1 레이저빔은 Ar 레이저, Kr 레이저 및 CO2 레이저로부터 선택된 한 종류로부터 발진되는, 반도체 장치 제조 방법.
- 제 1 항 내지 제 6 항 중 어느 한 항에 있어서,상기 제 1 레이저빔은 연속 발진 또는 펄스 발진의 헬륨-카드뮴 레이저, 구리 증기 레이저(copper vapor laser) 및 금 증기 레이저(gold vapor laser)로부터 선택된 한 종류로부터 발진되는, 반도체 장치 제조 방법.
- 제 1 항 내지 제 6 항 중 어느 한 항에 있어서,상기 제 1 레이저빔은 비선형 광학 소자를 통해 더 높은 고조파로 변환되는, 반도체 장치 제조 방법.
- 제 1 항 내지 제 6 항 중 어느 한 항에 있어서,상기 반도체 막은 실리콘을 포함하는 막인, 반도체 장치 제조 방법.
- 제 1 항 내지 제 6 항 중 어느 한 항에 있어서,상기 반도체 장치는 개인용 컴퓨터, 비디오 카메라, 모바일 컴퓨터(mobile computer), 고글형 디스플레이(goggle type display), 기록 매체를 사용하는 플레이어, 디지털 카메라, 프론트형 프로젝터(front type projector), 리어형 프로젝터 (rear type projector), 모바일 전화기(mobile telephone) 및 전자 책(electronic book)으로 구성되는 그룹으로부터 선택된 하나로 내장되는, 반도체 장치 제조 방법.
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JPJP-P-2001-292410 | 2001-09-25 | ||
JP2001292410 | 2001-09-25 | ||
JP2001328371 | 2001-10-25 | ||
JPJP-P-2001-328371 | 2001-10-25 | ||
JP2002256189A JP4397571B2 (ja) | 2001-09-25 | 2002-08-30 | レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法 |
JPJP-P-2002-256189 | 2002-08-30 |
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KR100936642B1 (ko) | 2010-01-14 |
US8686315B2 (en) | 2014-04-01 |
US20140113440A1 (en) | 2014-04-24 |
EP1304186B1 (en) | 2009-09-16 |
EP1304186A3 (en) | 2005-06-22 |
US20170062214A1 (en) | 2017-03-02 |
DE60233706D1 (de) | 2009-10-29 |
TW200710999A (en) | 2007-03-16 |
JP2003257885A (ja) | 2003-09-12 |
US20030086182A1 (en) | 2003-05-08 |
US10910219B2 (en) | 2021-02-02 |
SG143971A1 (en) | 2008-07-29 |
KR20090079860A (ko) | 2009-07-22 |
US7138306B2 (en) | 2006-11-21 |
SG151086A1 (en) | 2009-04-30 |
KR20090077748A (ko) | 2009-07-15 |
TWI282649B (en) | 2007-06-11 |
KR100929505B1 (ko) | 2009-12-03 |
EP1304186A2 (en) | 2003-04-23 |
US20190348286A1 (en) | 2019-11-14 |
US20060215722A1 (en) | 2006-09-28 |
JP4397571B2 (ja) | 2010-01-13 |
TWI279863B (en) | 2007-04-21 |
US10366885B2 (en) | 2019-07-30 |
CN1280880C (zh) | 2006-10-18 |
US20060215721A1 (en) | 2006-09-28 |
US9748099B2 (en) | 2017-08-29 |
SG120886A1 (en) | 2006-04-26 |
CN1409382A (zh) | 2003-04-09 |
KR20030026906A (ko) | 2003-04-03 |
US7943885B2 (en) | 2011-05-17 |
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