KR20040093383A - 발광다이오드칩을 사용한 발광장치 및 그 제조방법 - Google Patents
발광다이오드칩을 사용한 발광장치 및 그 제조방법 Download PDFInfo
- Publication number
- KR20040093383A KR20040093383A KR10-2003-7016751A KR20037016751A KR20040093383A KR 20040093383 A KR20040093383 A KR 20040093383A KR 20037016751 A KR20037016751 A KR 20037016751A KR 20040093383 A KR20040093383 A KR 20040093383A
- Authority
- KR
- South Korea
- Prior art keywords
- electrode pattern
- led chip
- electrode
- wiring board
- emitting device
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000000034 method Methods 0.000 title description 2
- 239000002184 metal Substances 0.000 claims abstract description 50
- 229910052751 metal Inorganic materials 0.000 claims abstract description 50
- 229920003002 synthetic resin Polymers 0.000 claims abstract description 27
- 239000000057 synthetic resin Substances 0.000 claims abstract description 27
- 238000004806 packaging method and process Methods 0.000 claims abstract description 5
- 239000007788 liquid Substances 0.000 claims description 21
- 238000003780 insertion Methods 0.000 claims description 5
- 230000037431 insertion Effects 0.000 claims description 5
- 229920005989 resin Polymers 0.000 claims description 5
- 239000011347 resin Substances 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 4
- 239000004020 conductor Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 238000009429 electrical wiring Methods 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 239000003086 colorant Substances 0.000 description 2
- 230000011218 segmentation Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (5)
- 배선기판의 표면에 금속막으로 형성한 제1전극패턴 및 제2전극패턴과, 상기 제2전극패턴에 탑재한 LED칩과, 이 LED칩 및 상기 제1전극패턴 상호간을 전기적으로 접속하는 금속선과, 상기 배선기판의 표면에서 상기 LED칩 및 금속선을 패키지하는 투명합성수지에 의한 렌즈체로 이루어지는 발광장치에 있어서,상기 제1전극패턴을 원형으로 하고, 그 중심부분에 무전극의 관통구멍부를 형성하고, 이 관통구멍부 내에 상기 제2전극패턴을 설치한 것을 특징으로 하는 LED칩을 사용한 발광장치.
- 배선기판의 표면에 금속막으로 형성한 제1전극패턴 및 제2전극패턴과, 상기 제2전극패턴에 탑재한 LED칩과, 이 LED칩 및 상기 제1전극패턴 상호간을 전기적으로 접속하는 금속선과, 상기 배선기판의 표면에 있어서 상기 LED칩 및 금속선을 패키지하는 투명합성수지에 의한 렌즈체로 이루어지는 발광장치에 있어서,상기 제1전극패턴을 원형으로 하고, 그 중심부분에 무전극의 관통구멍부를 형성하는 한편, 상기 제2전극패턴을 복수개로 하고, 이 각 제2전극패턴을 상기 제1전극패턴에서의 관통구멍부 내에 상기 원형의 제1전극패턴과 대략 동심원의 원주방향을 따라서 대략 같은 간격으로 하여 형성하고, 또한, 상기 각 제2전극패턴에 탑재한 LED칩과 상기 제1전극패턴을 전기적으로 접속하는 금속선을 반경방향 외향의 방사상으로 연장되도록 설치한 것을 특징으로 하는 LED칩을 사용한 발광장치.
- 제1항 또는 제2항에 있어서, 상기 배선기판의 이면에, 상기 제1전극패턴 및 제2전극패턴에 배선기판에 있어서의 스루홀을 통하여 전기적으로 접속하는 통전용 배선패턴을 형성한 것을 특징으로 하는 LED칩을 사용한 발광장치.
- 제2항에 있어서, 상기 제1전극패턴 중 상기 관통구멍의 내주 가장자리의 부분에, 상기 각 제2전극패턴 사이로의 삽입부를 형성한 것을 특징으로 하는 LED칩을 사용한 발광장치.
- 배선기판에 금속막에 의한 제1전극패턴을 원형으로 하고 또한 그 중심부분에 무전극의 관통구멍부를 형성함과 아울러, 상기 관통구멍부 내에 금속막에 의한 제2전극패턴을 형성하는 공정과, 상기 제2전극패턴에 LED칩을 탑재하는 공정과, 상기 LED칩과 상기 제1전극패턴의 사이를 금속선으로 전기적으로 접속하는 공정과, 상기 제1전극패턴에 대하여 액체의 투명합성수지를 그 투명합성수지가 상기 LED칩 및 금속선을 덮어 불룩하게 되도록 적하한 후 경화하여 렌즈체로 하는 공정으로 이루어지는 것을 특징으로 하는 LED칩을 사용한 발광장치의 제조방법.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002059122A JP3801931B2 (ja) | 2002-03-05 | 2002-03-05 | Ledチップを使用した発光装置の構造及び製造方法 |
JPJP-P-2002-00059122 | 2002-03-05 | ||
PCT/JP2003/002448 WO2003075367A1 (fr) | 2002-03-05 | 2003-03-03 | Dispositif electroluminescent comprenant une puce a del et procede de fabrication de celui-ci |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040093383A true KR20040093383A (ko) | 2004-11-05 |
KR100862985B1 KR100862985B1 (ko) | 2008-10-13 |
Family
ID=27784730
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020037016751A KR100862985B1 (ko) | 2002-03-05 | 2003-03-03 | 발광다이오드칩을 사용한 발광장치 및 그 제조방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7126159B2 (ko) |
EP (1) | EP1482567A4 (ko) |
JP (1) | JP3801931B2 (ko) |
KR (1) | KR100862985B1 (ko) |
WO (1) | WO2003075367A1 (ko) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100755615B1 (ko) * | 2006-04-14 | 2007-09-06 | 삼성전기주식회사 | 발광 다이오드를 이용한 액정 표시 장치의 백라이트 |
KR100782771B1 (ko) * | 2006-03-14 | 2007-12-05 | 삼성전기주식회사 | 엘이디 패키지 제조방법 |
KR100804021B1 (ko) * | 2006-07-11 | 2008-02-18 | 우리이티아이 주식회사 | 단차 인캡식 엘이디 패키지 및 그의 제조방법 |
KR101365875B1 (ko) * | 2005-08-04 | 2014-02-21 | 크리 인코포레이티드 | 투입된 봉지물질을 이용한 반도체 발광 소자용 패키지와그를 패키징하는 방법 |
US8835952B2 (en) | 2005-08-04 | 2014-09-16 | Cree, Inc. | Submounts for semiconductor light emitting devices and methods of forming packaged light emitting devices including dispensed encapsulants |
Families Citing this family (79)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6359360A (ja) * | 1986-08-29 | 1988-03-15 | Koito Mfg Co Ltd | ヘツドランプクリ−ナ用超広角ノズル |
EP1658642B1 (en) | 2003-08-28 | 2014-02-26 | Panasonic Corporation | Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device |
US7915085B2 (en) | 2003-09-18 | 2011-03-29 | Cree, Inc. | Molded chip fabrication method |
US7781789B2 (en) * | 2006-11-15 | 2010-08-24 | The Regents Of The University Of California | Transparent mirrorless light emitting diode |
JP2005353802A (ja) * | 2004-06-10 | 2005-12-22 | Citizen Electronics Co Ltd | 発光ダイオード |
US7534633B2 (en) | 2004-07-02 | 2009-05-19 | Cree, Inc. | LED with substrate modifications for enhanced light extraction and method of making same |
JP2006114737A (ja) * | 2004-10-15 | 2006-04-27 | Akita Denshi Systems:Kk | 光半導体装置及びその製造方法 |
US9793247B2 (en) * | 2005-01-10 | 2017-10-17 | Cree, Inc. | Solid state lighting component |
US9070850B2 (en) | 2007-10-31 | 2015-06-30 | Cree, Inc. | Light emitting diode package and method for fabricating same |
JP4727314B2 (ja) * | 2005-06-21 | 2011-07-20 | ローム株式会社 | 発光ダイオードを使用した表示パネル装置 |
JP2007053318A (ja) * | 2005-08-19 | 2007-03-01 | Matsushita Electric Ind Co Ltd | 固体撮像装置及びその製造方法 |
DE102005048498B4 (de) * | 2005-10-07 | 2007-06-21 | Schefenacker Vision Systems Germany Gmbh | Mehrfarbige Fahrzeugaußenleuchte |
JP4954664B2 (ja) * | 2005-10-20 | 2012-06-20 | 昭和電工株式会社 | 発光素子実装用基板、発光素子実装パッケージおよび面光源装置 |
US20090225541A1 (en) * | 2005-10-20 | 2009-09-10 | Showa Denko K.K. | Luminous device mounting substrate, luminous device mounting package, and planar light source device |
US20070096139A1 (en) * | 2005-11-02 | 2007-05-03 | 3M Innovative Properties Company | Light emitting diode encapsulation shape control |
JP4724618B2 (ja) * | 2005-11-11 | 2011-07-13 | 株式会社 日立ディスプレイズ | 照明装置及びそれを用いた液晶表示装置 |
US20090001388A1 (en) * | 2006-01-19 | 2009-01-01 | Rohm Co., Ltd. | Semiconductor Display Device and Method for Manufacturing The Same |
KR100828891B1 (ko) | 2006-02-23 | 2008-05-09 | 엘지이노텍 주식회사 | Led 패키지 |
JP4823729B2 (ja) * | 2006-03-20 | 2011-11-24 | ローム株式会社 | 光通信モジュール |
US8969908B2 (en) * | 2006-04-04 | 2015-03-03 | Cree, Inc. | Uniform emission LED package |
US9335006B2 (en) | 2006-04-18 | 2016-05-10 | Cree, Inc. | Saturated yellow phosphor converted LED and blue converted red LED |
US7547115B2 (en) * | 2006-05-23 | 2009-06-16 | Au Optronics Corporation | Package structure for light emitting diode and applications of the same |
US7545461B2 (en) * | 2006-07-25 | 2009-06-09 | Kyocera Corporation | Liquid crystal display device |
US7804147B2 (en) * | 2006-07-31 | 2010-09-28 | Cree, Inc. | Light emitting diode package element with internal meniscus for bubble free lens placement |
US7808013B2 (en) * | 2006-10-31 | 2010-10-05 | Cree, Inc. | Integrated heat spreaders for light emitting devices (LEDs) and related assemblies |
US7897980B2 (en) * | 2006-11-09 | 2011-03-01 | Cree, Inc. | Expandable LED array interconnect |
US10295147B2 (en) | 2006-11-09 | 2019-05-21 | Cree, Inc. | LED array and method for fabricating same |
EP2087563B1 (en) * | 2006-11-15 | 2014-09-24 | The Regents of The University of California | Textured phosphor conversion layer light emitting diode |
US7769066B2 (en) | 2006-11-15 | 2010-08-03 | Cree, Inc. | Laser diode and method for fabricating same |
JP2010512662A (ja) | 2006-12-11 | 2010-04-22 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 透明発光ダイオード |
US7834367B2 (en) | 2007-01-19 | 2010-11-16 | Cree, Inc. | Low voltage diode with reduced parasitic resistance and method for fabricating |
US9159888B2 (en) | 2007-01-22 | 2015-10-13 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
US9024349B2 (en) * | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
US8232564B2 (en) | 2007-01-22 | 2012-07-31 | Cree, Inc. | Wafer level phosphor coating technique for warm light emitting diodes |
JP4869165B2 (ja) | 2007-06-28 | 2012-02-08 | 昭和電工株式会社 | 発光装置の製造方法 |
US9401461B2 (en) * | 2007-07-11 | 2016-07-26 | Cree, Inc. | LED chip design for white conversion |
US10505083B2 (en) * | 2007-07-11 | 2019-12-10 | Cree, Inc. | Coating method utilizing phosphor containment structure and devices fabricated using same |
JP5290543B2 (ja) * | 2007-07-20 | 2013-09-18 | スタンレー電気株式会社 | 発光装置 |
US8519437B2 (en) | 2007-09-14 | 2013-08-27 | Cree, Inc. | Polarization doping in nitride based diodes |
US9012937B2 (en) | 2007-10-10 | 2015-04-21 | Cree, Inc. | Multiple conversion material light emitting diode package and method of fabricating same |
KR20090058878A (ko) * | 2007-12-05 | 2009-06-10 | 삼성전자주식회사 | 발광 장치, 그의 제조 방법 및 그를 포함하는 액정 표시장치 |
US9041285B2 (en) | 2007-12-14 | 2015-05-26 | Cree, Inc. | Phosphor distribution in LED lamps using centrifugal force |
US8167674B2 (en) | 2007-12-14 | 2012-05-01 | Cree, Inc. | Phosphor distribution in LED lamps using centrifugal force |
US8878219B2 (en) * | 2008-01-11 | 2014-11-04 | Cree, Inc. | Flip-chip phosphor coating method and devices fabricated utilizing method |
US8637883B2 (en) | 2008-03-19 | 2014-01-28 | Cree, Inc. | Low index spacer layer in LED devices |
US8877524B2 (en) * | 2008-03-31 | 2014-11-04 | Cree, Inc. | Emission tuning methods and devices fabricated utilizing methods |
KR101488451B1 (ko) * | 2008-03-31 | 2015-02-02 | 서울반도체 주식회사 | 멀티칩 led 패키지 |
US9425172B2 (en) | 2008-10-24 | 2016-08-23 | Cree, Inc. | Light emitter array |
KR101077264B1 (ko) * | 2009-02-17 | 2011-10-27 | (주)포인트엔지니어링 | 광소자용 기판, 이를 갖는 광소자 패키지 및 이의 제조 방법 |
DE102009031008A1 (de) * | 2009-06-29 | 2010-12-30 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil |
JP2011077084A (ja) * | 2009-09-29 | 2011-04-14 | Rohm Co Ltd | Led照明装置および液晶表示装置 |
US8511851B2 (en) | 2009-12-21 | 2013-08-20 | Cree, Inc. | High CRI adjustable color temperature lighting devices |
JP4951090B2 (ja) * | 2010-01-29 | 2012-06-13 | 株式会社東芝 | Ledパッケージ |
JP2012004596A (ja) * | 2010-01-29 | 2012-01-05 | Toshiba Corp | Ledパッケージ及びその製造方法 |
US10546846B2 (en) | 2010-07-23 | 2020-01-28 | Cree, Inc. | Light transmission control for masking appearance of solid state light sources |
JP5297472B2 (ja) * | 2011-01-18 | 2013-09-25 | ローム株式会社 | 発光ダイオードを使用した表示パネル装置 |
US9786811B2 (en) | 2011-02-04 | 2017-10-10 | Cree, Inc. | Tilted emission LED array |
JP5748496B2 (ja) * | 2011-02-10 | 2015-07-15 | ローム株式会社 | Ledモジュール |
US8888331B2 (en) * | 2011-05-09 | 2014-11-18 | Microsoft Corporation | Low inductance light source module |
JP2013004815A (ja) | 2011-06-17 | 2013-01-07 | Sony Corp | 光源回路ユニットおよび照明装置、並びに表示装置 |
USD700584S1 (en) | 2011-07-06 | 2014-03-04 | Cree, Inc. | LED component |
US10842016B2 (en) | 2011-07-06 | 2020-11-17 | Cree, Inc. | Compact optically efficient solid state light source with integrated thermal management |
US8558252B2 (en) | 2011-08-26 | 2013-10-15 | Cree, Inc. | White LEDs with emission wavelength correction |
JP5737083B2 (ja) * | 2011-09-02 | 2015-06-17 | ウシオ電機株式会社 | Led光源装置 |
CN104170106A (zh) * | 2012-03-15 | 2014-11-26 | 松下电器产业株式会社 | Led用基板、led模块和led灯 |
JP6021457B2 (ja) * | 2012-06-18 | 2016-11-09 | 三菱電機株式会社 | 発光装置 |
WO2014196833A1 (ko) * | 2013-06-07 | 2014-12-11 | 서울반도체 주식회사 | 발광 디바이스 |
US9532464B2 (en) | 2013-07-22 | 2016-12-27 | Rohm Co., Ltd. | LED lighting apparatus |
JP6165537B2 (ja) * | 2013-07-22 | 2017-07-19 | ローム株式会社 | Led照明装置 |
KR102486853B1 (ko) * | 2015-03-06 | 2023-01-11 | 코닌클리케 필립스 엔.브이. | 비대칭 분포된 led 칩들을 갖는 led-기반 조명 디바이스 |
JP6842234B2 (ja) | 2015-10-13 | 2021-03-17 | ローム株式会社 | 光半導体装置の製造方法および光半導体装置 |
KR101987196B1 (ko) | 2016-06-14 | 2019-06-11 | 삼성디스플레이 주식회사 | 픽셀 구조체, 픽셀 구조체를 포함하는 표시장치 및 그 제조 방법 |
CN106486498B (zh) * | 2016-10-14 | 2019-09-10 | 武汉华星光电技术有限公司 | 一种显示面板 |
JP2018206708A (ja) * | 2017-06-08 | 2018-12-27 | シチズン電子株式会社 | 発光装置 |
JP2019135512A (ja) * | 2018-02-05 | 2019-08-15 | シャープ株式会社 | 立体表示装置、及び空中立体表示装置 |
JP7222827B2 (ja) * | 2019-06-21 | 2023-02-15 | スタンレー電気株式会社 | 半導体装置、および、その製造方法 |
JP7299768B2 (ja) * | 2019-06-21 | 2023-06-28 | スタンレー電気株式会社 | 半導体装置、半導体素子搭載用基板、および、その製造方法 |
US11592166B2 (en) | 2020-05-12 | 2023-02-28 | Feit Electric Company, Inc. | Light emitting device having improved illumination and manufacturing flexibility |
US11876042B2 (en) | 2020-08-03 | 2024-01-16 | Feit Electric Company, Inc. | Omnidirectional flexible light emitting device |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3999280A (en) * | 1973-06-25 | 1976-12-28 | Amp Incorporated | Narrow lead contact for automatic face down bonding of electronic chips |
JPS5511356A (en) * | 1978-07-11 | 1980-01-26 | Toshiba Corp | Light-emitting semiconductor display system |
JPS611067A (ja) * | 1984-06-13 | 1986-01-07 | Stanley Electric Co Ltd | プリント基板に装着されたledチツプのモ−ルド方法 |
FR2574616B1 (fr) * | 1984-12-07 | 1987-01-23 | Radiotechnique Compelec | Matrice d'element electro-luminescents et son procede de fabrication |
JPH0428269A (ja) * | 1990-05-23 | 1992-01-30 | Fujikura Ltd | Ledベアチップの実装構造 |
US5557115A (en) * | 1994-08-11 | 1996-09-17 | Rohm Co. Ltd. | Light emitting semiconductor device with sub-mount |
JPH10242523A (ja) * | 1997-02-28 | 1998-09-11 | Kouha:Kk | 発光ダイオード表示装置およびそれを利用した画像表示装置 |
JPH10319871A (ja) * | 1997-05-19 | 1998-12-04 | Kouha:Kk | Ledディスプレイ装置 |
JP4056598B2 (ja) * | 1997-10-09 | 2008-03-05 | シチズン電子株式会社 | 赤外線データ通信モジュール |
US6335548B1 (en) * | 1999-03-15 | 2002-01-01 | Gentex Corporation | Semiconductor radiation emitter package |
JP4342046B2 (ja) * | 1999-07-29 | 2009-10-14 | 三洋電機株式会社 | 金属基板型の発光装置 |
JP2001044579A (ja) * | 1999-07-29 | 2001-02-16 | Sanyo Electric Co Ltd | 混成集積回路装置 |
JP4412787B2 (ja) * | 1999-06-09 | 2010-02-10 | 三洋電機株式会社 | 金属基板を採用した照射装置および照射モジュール |
JP2001068742A (ja) * | 1999-08-25 | 2001-03-16 | Sanyo Electric Co Ltd | 混成集積回路装置 |
JP2000353826A (ja) * | 1999-06-09 | 2000-12-19 | Sanyo Electric Co Ltd | 混成集積回路装置および光照射装置 |
EP1059678A2 (en) | 1999-06-09 | 2000-12-13 | Sanyo Electric Co., Ltd. | Hybrid integrated circuit device |
JP4190095B2 (ja) * | 1999-07-29 | 2008-12-03 | 三洋電機株式会社 | 混成集積回路装置 |
GB0000511D0 (en) * | 2000-01-12 | 2000-03-01 | Oxley Dev Co Ltd | Led package |
JP2001351404A (ja) * | 2000-04-06 | 2001-12-21 | Kansai Tlo Kk | 発光ダイオードを用いた面発光装置 |
DE10033502A1 (de) * | 2000-07-10 | 2002-01-31 | Osram Opto Semiconductors Gmbh | Optoelektronisches Modul, Verfahren zu dessen Herstellung und dessen Verwendung |
US6611000B2 (en) * | 2001-03-14 | 2003-08-26 | Matsushita Electric Industrial Co., Ltd. | Lighting device |
JP2002319711A (ja) * | 2001-04-20 | 2002-10-31 | Citizen Electronics Co Ltd | 表面実装型発光ダイオード及びその製造方法 |
US6531328B1 (en) * | 2001-10-11 | 2003-03-11 | Solidlite Corporation | Packaging of light-emitting diode |
TW578280B (en) * | 2002-11-21 | 2004-03-01 | United Epitaxy Co Ltd | Light emitting diode and package scheme and method thereof |
-
2002
- 2002-03-05 JP JP2002059122A patent/JP3801931B2/ja not_active Expired - Fee Related
-
2003
- 2003-03-03 WO PCT/JP2003/002448 patent/WO2003075367A1/ja active Application Filing
- 2003-03-03 EP EP03743566A patent/EP1482567A4/en not_active Withdrawn
- 2003-03-03 US US10/505,845 patent/US7126159B2/en not_active Expired - Lifetime
- 2003-03-03 KR KR1020037016751A patent/KR100862985B1/ko active IP Right Grant
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101365875B1 (ko) * | 2005-08-04 | 2014-02-21 | 크리 인코포레이티드 | 투입된 봉지물질을 이용한 반도체 발광 소자용 패키지와그를 패키징하는 방법 |
US8835952B2 (en) | 2005-08-04 | 2014-09-16 | Cree, Inc. | Submounts for semiconductor light emitting devices and methods of forming packaged light emitting devices including dispensed encapsulants |
KR100782771B1 (ko) * | 2006-03-14 | 2007-12-05 | 삼성전기주식회사 | 엘이디 패키지 제조방법 |
KR100755615B1 (ko) * | 2006-04-14 | 2007-09-06 | 삼성전기주식회사 | 발광 다이오드를 이용한 액정 표시 장치의 백라이트 |
KR100804021B1 (ko) * | 2006-07-11 | 2008-02-18 | 우리이티아이 주식회사 | 단차 인캡식 엘이디 패키지 및 그의 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
US7126159B2 (en) | 2006-10-24 |
US20050122031A1 (en) | 2005-06-09 |
EP1482567A1 (en) | 2004-12-01 |
KR100862985B1 (ko) | 2008-10-13 |
EP1482567A4 (en) | 2010-03-31 |
JP2003258313A (ja) | 2003-09-12 |
WO2003075367A1 (fr) | 2003-09-12 |
EP1482567A9 (en) | 2005-11-02 |
JP3801931B2 (ja) | 2006-07-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100862985B1 (ko) | 발광다이오드칩을 사용한 발광장치 및 그 제조방법 | |
US8796717B2 (en) | Light-emitting diode package and manufacturing method thereof | |
KR100809263B1 (ko) | 직하 방식 백라이트 장치 | |
US8860047B2 (en) | Semiconductor light-emitting device | |
KR100855356B1 (ko) | 멀티-칩 발광다이오드 패키지 및 이를 이용한 조명장치 | |
JP6024352B2 (ja) | 発光装置およびその製造方法 | |
KR100976607B1 (ko) | 씨오엠(com) 형 발광다이오드 패키지, 이를 이용한 발광다이오드 모듈 및 그 제조방법 | |
JP6541963B2 (ja) | 発光装置及びその製造方法 | |
EP2472616B1 (en) | Light-emitting device package and method of manufacturing the same | |
CN113054059A (zh) | 显示装置、led封装体及其制作方法 | |
JP2004087935A (ja) | 半導体発光装置 | |
JP7410752B2 (ja) | パッケージ構造とその電子装置 | |
US20090039381A1 (en) | Light emitting diode package and method of manufacturing the same | |
EP1482540A1 (en) | Method for forming thin film | |
CN105378953B (zh) | 发光器件 | |
US20210057622A1 (en) | Light emitting device package structure and manufacturing method thereof | |
TWI390762B (zh) | Light emitting diode light source | |
CN221281390U (en) | High definition projection device | |
CN217086563U (zh) | Led灯珠、led显示模组及led显示屏 | |
KR101037369B1 (ko) | 형광액이 도포된 led 칩의 제조방법 및 이에 의해 제조된 led 칩 | |
CN103928597A (zh) | 具有厚膜反射层的发光二极管元件基板、元件及制法 | |
KR20120009273A (ko) | Led패키지용 기판 및 led패키지의 제조 방법과, 이에 의해 제조된 led패키지용 기판 및 led패키지 | |
CN109424864B (zh) | 光源结构、电子装置及光源结构制作方法 | |
CN201681965U (zh) | 发光二极管光源模块 | |
CN116598404A (zh) | 背光基板、背光装置及其制作方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20120924 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20130924 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20141001 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20150917 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20160921 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20170920 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20180920 Year of fee payment: 11 |