KR20040020023A - 고온 열처리를 위한 서셉터 플레이트 - Google Patents
고온 열처리를 위한 서셉터 플레이트 Download PDFInfo
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- KR20040020023A KR20040020023A KR1020030060106A KR20030060106A KR20040020023A KR 20040020023 A KR20040020023 A KR 20040020023A KR 1020030060106 A KR1020030060106 A KR 1020030060106A KR 20030060106 A KR20030060106 A KR 20030060106A KR 20040020023 A KR20040020023 A KR 20040020023A
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- 238000010438 heat treatment Methods 0.000 title claims description 5
- 238000012545 processing Methods 0.000 claims abstract description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 12
- 239000010703 silicon Substances 0.000 claims abstract description 12
- 235000012431 wafers Nutrition 0.000 claims description 118
- 238000000034 method Methods 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000011282 treatment Methods 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 4
- 238000000227 grinding Methods 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 230000035882 stress Effects 0.000 description 18
- 238000005229 chemical vapour deposition Methods 0.000 description 11
- 238000007665 sagging Methods 0.000 description 11
- 238000005452 bending Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
- 238000003754 machining Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000012636 effector Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
온도 (℃) | 항복 응력σs(MPa) | 만곡의 반경 R(m) | 편향 b (㎛) |
1300 | 0.45 | 152 | 74 |
1200 | 0.75 | 91 | 123 |
1100 | 1.2 | 57 | 197 |
1000 | 2.0 | 34 | 328 |
온도 범위(℃) | 램프 속도(℃/min) |
1300-1250 | 0.28 |
1250-1200 | 0.35 |
1200-1150 | 0.46 |
1150-1100 | 0.62 |
1100-1050 | 0.85 |
1050-1000 | 1.2 |
온도(℃) | 만곡의 반경 R(m) | 돌출부 높이(㎛) |
1300 | 152 | 0.16 |
1200 | 106 | 0.27 |
1100 | 58 | 0.44 |
1000 | 28 | 0.73 |
Claims (29)
- 서셉터 플레이트에 있어서,서셉터 플레이트가 서셉터 플레이트 홀더 내에 분리가능하게 수평방향으로 수용되고, 상기 홀더는 수직방향으로 이격되어 있는 복수개의 서셉터 플레이트를 수용하는 복수개의 슬롯을 포함하며, 상기 서셉터 플레이트는 고온에서 반도체 웨이퍼의 전체 표면 영역을 충분히 지지하면서 300mm 또는 그 이상 직경의 반도체 웨이퍼를 상부 지지 표면에 장착하도록 제작되어 있으며, 상승된 온도에서의 처리 동안에 충분히 평탄하게 유지되는 것을 특징으로 하는 서셉터 플레이트.
- 제 1항에 있어서,상기 지지 표면은 웨이퍼가 장착되면 328㎛이하의 편향을 나타내는 것을 특징으로 하는 서셉터 플레이트.
- 제 2항에 있어서,상기 지지 표면은 웨이퍼가 장착되면 200㎛이하의 편향을 나타내는 것을 특징으로 하는 서셉터 플레이트.
- 제 3항에 있어서,상기 지지 표면은 웨이퍼가 장착되면 125㎛이하의 편향을 나타내는 것을 특징으로 하는 서셉터 플레이트.
- 제 4항에 있어서,상기 지지 표면은 웨이퍼가 장착되면 75㎛이하의 편향을 나타내는 것을 특징으로 하는 서셉터 플레이트.
- 제 1항에 있어서,상기 지지 표면은 0.5㎛보다 높은 돌출부를 제거하기 위하여 연삭되거나 연마되는 것을 특징으로 하는 서셉터 플레이트.
- 제 1항에 있어서,상기 지지 표면은 0.25㎛보다 높은 돌출부를 제거하기 위하여 연삭되거나 연마되는 것을 특징으로 하는 서셉터 플레이트.
- 제 1항에 있어서,상기 지지 표면은 0.15㎛보다 높은 돌출부를 제거하기 위하여 연삭되거나 연마되는 것을 특징으로 하는 서셉터 플레이트.
- 제 1항에 있어서,상기 지지 표면은 0.10㎛보다 높은 돌출부를 제거하기 위하여 연삭되거나 연마되는 것을 특징으로 하는 서셉터 플레이트.
- 제 1항에 있어서,웨이퍼를 서셉터 플레이트에 자동으로 장착하고 서셉터 플레이트으로부터 자동으로 탈착하는 것을 용이하게 하기 위하여 3개의 이격되어 있는 관통공을 더 포함하는 것을 특징으로 하는 서셉터 플레이트.상기 관통공은 웨이퍼 상에 지지되지 않는 20mm이상 직경의 원형 영역을 남기지 않는 크기이다.
- 제 10항에 있어서,상기 관통공은 웨이퍼 상에 지지되지 않는 10mm이상 직경의 원형 영역을 남기지 않는 크기인 것을 특징으로 하는 서셉터 플레이트.
- 제 1항에 있어서,상기 서셉터 플레이트는 지지 표면을 제공하는 CVD SiC물질을 더 포함하는 것을 특징으로 하는 서셉터 플레이트.
- 제 12항에 있어서,상기 CVD SiC물질은 프리-스탠딩(free standing) CVD SiC물질인 것을 특징으로 하는 서셉터 플레이트.
- 제 1항에 있어서,상기 서셉터 플레이트 홀더는 모서리에 웨이퍼를 지지하기 위한 슬롯을 지정하는(defining) 3개의 지지 칼럼을 포함하는 것을 특징으로 하는 서셉터 플레이트.
- 제 1항에 있어서,상기 서셉터 플레이트 홀더는 약 1000℃이상에서 동작하는 수직 퍼니스내에서 사용되도록 만들어진 것을 특징으로 하는 서셉터 플레이트.
- 제 15항에 있어서,상기 수직 퍼니스는 약 1200℃이상에서 작동되는 것을 특징으로 하는 서셉터 플레이트.
- 제 1항에 있어서,상기 서셉터 플레이트는 볼록-상향(convex-up) 방향으로 미리 굽혀진 것을 특징으로 하는 서셉터 플레이트.
- 복수개의 웨이퍼가 홀더내에서 수직방향으로 이격되어 수용되며, 상승한 처리온도에서 상기 복수의 실리콘 웨이퍼를 열 처리하는 방법에 있어서,웨이퍼를 처리온도까지 가열함;처리온도에서 웨이퍼를 처리함;처리후에 웨이퍼를 냉각함;웨이퍼의 전체 표면 영역을 충분히 지지하고, 가열, 처리, 그리고 냉각동안 각 웨이퍼를 충분히 평탄하게 유지함을 포함하는 것을 특징으로 하는 방법.여기서 주어진 처리온도에서 각 웨이퍼들은 최소한 표 1에 규정된 것과 같이 평탄하거나 더 평탄하다.
- 제 18항에 있어서,처리온도는 1000℃이상인 것을 특징으로 하는 방법.
- 제 18항에 있어서,처리온도는 1200℃이상인 것을 특징으로 하는 방법.
- 제 18항에 있어서,웨이퍼를 상기 서셉터 플레이트에 장착하고 상기 서셉터 플레이트를 반응 챔버로 이동함을 더 포함하는 것을 특징으로 하는 방법.
- 제 21항에 있어서,각각의 웨이퍼가 복수개의 서셉터 플레이트에 장착되고 장착된 서셉터 플레이트를 서셉터 플레이트 홀더안으로 이동시킴을 더 포함하는 것을 특징으로 하는방법.여기서, 상승된 처리온도에서의 처리는 서셉터 플레이트 홀더내의 복수개의 장착된 서셉터 플레이트에 대하여 이루어진다.
- 제 22항에 있어서,처리온도는 약 1000℃이상인 것을 특징으로 하는 방법.
- 제 21항에 있어서,서셉터 플레이트는 웨이퍼 아래에 있는 지지 표면에 20mm의 원을 수용할 만큼 큰 개구부를 가지지 않는 것을 특징으로 하는 서셉터 플레이트.
- 제 21항에 있어서,상기 지지 표면은 약 328㎛이하의 편향을 가지도록 충분히 평탄한 것을 특징으로 하는 방법.
- 제 21항에 있어서,상기 지지 표면은 200㎛이하의 편향을 가지도록 충분히 평탄한 것을 특징으로 하는 방법.
- 제 21항에 있어서,상기 지지 표면을 0.5㎛보다 높은 돌출부를 제거하도록 연삭하거나 연마하는 것을 포함하는 것을 특징으로 하는 방법.
- 제 21항에 있어서,상기 지지 표면을 0.25㎛보다 높은 돌출부를 제거하도록 연삭하거나 연마하는 것을 포함하는 것을 특징으로 하는 방법.
- 제 21항에 있어서,각 웨이퍼는 최소한 300mm의 직경을 가지는 것을 특징으로 하는 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US40784202P | 2002-08-30 | 2002-08-30 | |
US60/407,842 | 2002-08-30 |
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KR20040020023A true KR20040020023A (ko) | 2004-03-06 |
KR101018850B1 KR101018850B1 (ko) | 2011-03-04 |
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KR1020030060106A KR101018850B1 (ko) | 2002-08-30 | 2003-08-29 | 고온 열처리를 위한 서셉터 플레이트 |
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US (1) | US7256375B2 (ko) |
JP (1) | JP2004134761A (ko) |
KR (1) | KR101018850B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100841196B1 (ko) * | 2004-06-21 | 2008-06-24 | 가부시키가이샤 섬코 | 반도체 실리콘 기판용 열처리 지그 |
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DE602004025366D1 (de) * | 2003-07-02 | 2010-03-18 | Cook Inc | Koaxialen Katheter |
US7181132B2 (en) | 2003-08-20 | 2007-02-20 | Asm International N.V. | Method and system for loading substrate supports into a substrate holder |
JP4534619B2 (ja) * | 2004-06-21 | 2010-09-01 | 株式会社Sumco | 半導体シリコン基板用熱処理治具 |
US20060060145A1 (en) * | 2004-09-17 | 2006-03-23 | Van Den Berg Jannes R | Susceptor with surface roughness for high temperature substrate processing |
DE102005013831B4 (de) * | 2005-03-24 | 2008-10-16 | Siltronic Ag | Siliciumscheibe und Verfahren zur thermischen Behandlung einer Siliciumscheibe |
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EP2080221B1 (en) * | 2006-11-10 | 2011-06-15 | Saint-Gobain Ceramics & Plastics, Inc. | A susceptor and method of forming a led device using such susceptor |
TWI547999B (zh) * | 2007-09-17 | 2016-09-01 | Dsgi公司 | 微波退火半導體材料的系統及方法 |
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KR101018850B1 (ko) | 2011-03-04 |
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US7256375B2 (en) | 2007-08-14 |
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