KR20010030323A - 포토레지스트용 박리액 및 이것을 사용한 포토레지스트박리방법 - Google Patents
포토레지스트용 박리액 및 이것을 사용한 포토레지스트박리방법 Download PDFInfo
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- KR20010030323A KR20010030323A KR1020000053172A KR20000053172A KR20010030323A KR 20010030323 A KR20010030323 A KR 20010030323A KR 1020000053172 A KR1020000053172 A KR 1020000053172A KR 20000053172 A KR20000053172 A KR 20000053172A KR 20010030323 A KR20010030323 A KR 20010030323A
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- photoresist
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- substrate
- peeling
- photoresists
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- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- WJYIASZWHGOTOU-UHFFFAOYSA-N Heptylamine Chemical compound CCCCCCCN WJYIASZWHGOTOU-UHFFFAOYSA-N 0.000 description 1
- CJKRXEBLWJVYJD-UHFFFAOYSA-N N,N'-diethylethylenediamine Chemical compound CCNCCNCC CJKRXEBLWJVYJD-UHFFFAOYSA-N 0.000 description 1
- AKNUHUCEWALCOI-UHFFFAOYSA-N N-ethyldiethanolamine Chemical compound OCCN(CC)CCO AKNUHUCEWALCOI-UHFFFAOYSA-N 0.000 description 1
- OHLUUHNLEMFGTQ-UHFFFAOYSA-N N-methylacetamide Chemical compound CNC(C)=O OHLUUHNLEMFGTQ-UHFFFAOYSA-N 0.000 description 1
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 description 1
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 description 1
- PCNDJXKNXGMECE-UHFFFAOYSA-N Phenazine Natural products C1=CC=CC2=NC3=CC=CC=C3N=C21 PCNDJXKNXGMECE-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical compound C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- SLINHMUFWFWBMU-UHFFFAOYSA-N Triisopropanolamine Chemical compound CC(O)CN(CC(C)O)CC(C)O SLINHMUFWFWBMU-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- LFYJSSARVMHQJB-QIXNEVBVSA-N bakuchiol Chemical compound CC(C)=CCC[C@@](C)(C=C)\C=C\C1=CC=C(O)C=C1 LFYJSSARVMHQJB-QIXNEVBVSA-N 0.000 description 1
- JCXKHYLLVKZPKE-UHFFFAOYSA-N benzotriazol-1-amine Chemical compound C1=CC=C2N(N)N=NC2=C1 JCXKHYLLVKZPKE-UHFFFAOYSA-N 0.000 description 1
- MXJIHEXYGRXHGP-UHFFFAOYSA-N benzotriazol-1-ylmethanol Chemical compound C1=CC=C2N(CO)N=NC2=C1 MXJIHEXYGRXHGP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- GKWKOCYSCDZTAX-UHFFFAOYSA-N dichloroboron Chemical compound Cl[B]Cl GKWKOCYSCDZTAX-UHFFFAOYSA-N 0.000 description 1
- LVTYICIALWPMFW-UHFFFAOYSA-N diisopropanolamine Chemical compound CC(O)CNCC(C)O LVTYICIALWPMFW-UHFFFAOYSA-N 0.000 description 1
- 229940043276 diisopropanolamine Drugs 0.000 description 1
- 239000012972 dimethylethanolamine Substances 0.000 description 1
- LAWOZCWGWDVVSG-UHFFFAOYSA-N dioctylamine Chemical compound CCCCCCCCNCCCCCCCC LAWOZCWGWDVVSG-UHFFFAOYSA-N 0.000 description 1
- WEHWNAOGRSTTBQ-UHFFFAOYSA-N dipropylamine Chemical compound CCCNCCC WEHWNAOGRSTTBQ-UHFFFAOYSA-N 0.000 description 1
- 125000005677 ethinylene group Chemical group [*:2]C#C[*:1] 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- KVFVBPYVNUCWJX-UHFFFAOYSA-M ethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(C)C KVFVBPYVNUCWJX-UHFFFAOYSA-M 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical group 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 150000008624 imidazolidinones Chemical class 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000004491 isohexyl group Chemical group C(CCC(C)C)* 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 150000002596 lactones Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 description 1
- UDGSVBYJWHOHNN-UHFFFAOYSA-N n',n'-diethylethane-1,2-diamine Chemical compound CCN(CC)CCN UDGSVBYJWHOHNN-UHFFFAOYSA-N 0.000 description 1
- SCZVXVGZMZRGRU-UHFFFAOYSA-N n'-ethylethane-1,2-diamine Chemical compound CCNCCN SCZVXVGZMZRGRU-UHFFFAOYSA-N 0.000 description 1
- AJFDBNQQDYLMJN-UHFFFAOYSA-N n,n-diethylacetamide Chemical compound CCN(CC)C(C)=O AJFDBNQQDYLMJN-UHFFFAOYSA-N 0.000 description 1
- RIWRFSMVIUAEBX-UHFFFAOYSA-N n-methyl-1-phenylmethanamine Chemical compound CNCC1=CC=CC=C1 RIWRFSMVIUAEBX-UHFFFAOYSA-N 0.000 description 1
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000269 nucleophilic effect Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000007591 painting process Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001281 polyalkylene Polymers 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- GGHDAUPFEBTORZ-UHFFFAOYSA-N propane-1,1-diamine Chemical compound CCC(N)N GGHDAUPFEBTORZ-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- AOHJOMMDDJHIJH-UHFFFAOYSA-N propylenediamine Chemical compound CC(N)CN AOHJOMMDDJHIJH-UHFFFAOYSA-N 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 description 1
- VPYJNCGUESNPMV-UHFFFAOYSA-N triallylamine Chemical compound C=CCN(CC=C)CC=C VPYJNCGUESNPMV-UHFFFAOYSA-N 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- GRNRCQKEBXQLAA-UHFFFAOYSA-M triethyl(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CCO GRNRCQKEBXQLAA-UHFFFAOYSA-M 0.000 description 1
- YFTHZRPMJXBUME-UHFFFAOYSA-N tripropylamine Chemical compound CCCN(CCC)CCC YFTHZRPMJXBUME-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
포토레지스트용 박리액 (wt%) | pH | |||||
(a) 성분 | (b) 성분 | (c) 성분 | (d) 성분 | 타배합성분 | ||
실시예 1 | FA (1.0) | DMSO (잔부) | AA (0.1) | 물 (30.0) | - | 8.9 |
실시예 2 | FA (1.0) | DMSO (잔부) | AA (0.3) | 물 (30.0) | - | 9.2 |
실시예 3 | FA (1.0) | DMSO (잔부) | HA (0.2) | 물 (30.0) | - | 9.0 |
실시예 4 | FA (1.0) | NMP (잔부) | MEA (0.1) | 물 (30.0) | - | 9.2 |
실시예 5 | FA (1.0) | DMSO (잔부) | AA (0.1) | 물 (30.0) | 아세틸렌알코올·알킬렌옥시드 부가물 (0.1) | 8.9 |
실시예 6 | FA (1.0) | DMSO (잔부) | AA (0.2) | 물 (30.0) | 벤조트리아졸계화합물 (1.0) | 8.9 |
비교예 1 | FA (1.0) | DMSO (잔부) | - | 물 (30.0) | 불화수소산 (0.05) | 8.2 |
비교예 2 | FA (1.0) | DMSO (잔부) | - | 물 (30.0) | - | 8.3 |
Al-Si-Cu 배선의 에칭 속도 (㎚/min) | |
실시예 1 | 11 |
실시예 2 | 5 |
실시예 3 | 9 |
실시예 4 | 5 |
실시예 5 | 10 |
실시예 6 | 8 |
비교예 1 | 31 |
비교예 2 | 56 |
Claims (17)
- (a) 불화수소산과 금속이온을 함유하지 않는 염기의 염, (b) 수용성 유기용매, (c) 염기성물질, 및 (d) 물을 함유하여 이루어지는 포토레지스트용 박리액.
- 제 1 항에 있어서, (c) 성분이 암모니아수, 히드록실아민류, 및 25 ℃ 의 수용액에 있어서의 산 해리정수 (pKa) 가 7.5 내지 13 의 아민류 중에서 선택되는 1 종 이상인 포토레지스트용 박리액.
- 제 1 항에 있어서, (a) 성분을 형성하기 위한 금속이온을 함유하지 않는 염기가 히드록실아민류, 제 1 급, 제 2 급 또는 제 3 급 지방족 아민, 지환식 아민, 방향족 아민, 복소환식 아민, 암모니아수, 및 저급 알킬 제 4 급 암모늄염기 중에서 선택되는 1 종 이상인 포토레지스트용 박리액.
- 제 1 항에 있어서, (a) 성분이 불화암모늄 (NH4F) 인 포토레지스트용 박리액.
- 제 1 항에 있어서, (b) 성분이 디메틸술폭시드, N,N-디메틸포름아미드, N,N-디메틸아세트아미드, N-메틸-2-피롤리돈, 1,3-디메틸-2-이미다졸리디논, 에틸렌글리콜, 및 디에틸렌글리콜 모노부틸에테르 중에서 선택되는 1 종 이상인 포토레지스트용 박리액.
- 제 1 항에 있어서, (c) 성분이 암모니아수, 히드록실아민 (NH2OH), 및 모노에탄올아민 중에서 선택되는 1 종 이상인 포토레지스트용 박리액.
- 제 1 항에 있어서, 계 중의 pH 가 8.5 내지 10 인 포토레지스트용 박리액.
- 제 1 항에 있어서, 추가로 아세틸렌알코올·알킬렌옥시드 부가물을 함유하는 포토레지스트용 박리액.
- 제 8 항에 있어서, 상기 아세틸렌알코올·알킬렌옥시드 부가물을 형성하기 위한 아세틸렌알코올이 하기 일반식 (Ⅱ):(단, R3은 수소원자 또는 하기 식:으로 표현되는 기이고 ; R4, R5, R6, R7은 각각 독립적으로 수소원자, 탄소원자수 1 내지 6 의 알킬기이다.)로 표현되는 화합물인 포토레지스트용 박리액.
- 제 8 항에 있어서, 상기 아세틸렌알코올·알킬렌옥시드 부가물을 형성하기 위한 알킬렌옥시드가 에틸렌옥시드, 프로필렌옥시드, 또는 이들의 혼합물인 포토레지스트용 박리액.
- 제 8 항에 있어서, 상기 아세틸렌알코올·알킬렌옥시드 부가물이 하기 일반식 (Ⅲ):(단, R8은 수소원자 또는 하기 식:으로 표현되는 기이고 ; R9, R10, R11, R12는 각각 독립적으로 수소원자, 탄소원자수 1 내지 6 의 알킬기이고 ; m + n 은 1 내지 30 의 정수이다.)로 표현되는 화합물인 포토레지스트용 박리액.
- 제 1 항에 있어서, 추가로 하기 일반식 (Ⅳ):[식 중, Q 는 수소원자, 수산기, 또는 탄소원자수 1 내지 10 의 치환 또는 비치환의 탄화수소기, 아릴기, 또는 하기 식:(식 중, R15는 탄소소원자수 1 내지 6 의 알킬기이고 ; R16, R17은 각각 독립적으로 수소원자, 수산기, 또는 탄소원자수 1 내지 6 의 히드록시알킬기 또는 알콕시알킬기이다.)로 표현되는 기이고 ; R13, R14는 각각 독립적으로 수소원자, 탄소원자수 1 내지 10 의 치환 또는 비치환의 탄화수소기, 카르복실기, 아미노기, 수산기, 시아노기, 포르밀기, 술포닐알킬기, 또는 술포기이다.]로 표현되는 벤조트리아졸계 화합물을 포함하는 포토레지스트용 박리액.
- 제 12 항에 있어서, 상기 일반식 (Ⅳ) 중, Q 가 하기 식:으로 표현되는 기 (단, 식 중 R15는 상기에서 정의한 것과 같은 의미이고 ; R16, R17은 각각 독립적으로 탄소원자수 1 내지 6 의 히드록시알킬기 또는 알콕시알킬기이다.) 를 나타내는 벤조트리아졸계 화합물을 포함하는 포토레지스트용 박리액.
- 기판 위에 형성한 포토레지스트 패턴을 마스크로 하여, 이 기판에 에칭처리하고, 계속하여 회화처리를 한 후, 제 1 항 내지 제 13 항 중 어느 한 항에 기재된 포토레지스트용 박리액을 사용하여 포토레지스트 패턴을 박리하고, 이어서 기판을 물로 린스처리하는 포토레지스트 박리방법.
- 제 14 항에 있어서, (Ⅰ) 임의의 금속층을 형성한 기판 위에 포토레지스트층을 형성하는 공정;(Ⅱ) 상기 포토레지스트층을 선택적으로 노광하는 공정;(Ⅲ) 노광후의 포토레지스트층을 현상하여 포토레지스트 패턴을 형성하는 공정;(Ⅳ) 상기 포토레지스트 패턴을 마스크로 하여 상기 기판을 에칭하는 공정;(Ⅴ) 포토레지스트 패턴을 플라스마 회화하는 공정;(Ⅵ) 회화 후의 포토레지스트 패턴을 제 1 항 내지 제 13 항 중 어느 한 항에 기재된 포토레지스트용 박리액을 사용하여 기판에서 박리하는 공정; 및,(Ⅶ) 기판을 린스처리하는 공정을 포함하는 포토레지스트 박리방법.
- 제 14 항에 있어서, (Ⅰ) Cu 배선을 형성하여 이루어지는 기판 위에 에칭 스토퍼층, 추가로 그 상층에 층간절연층을 형성하는 공정;(Ⅱ) 상기 층간절연층 위에 포토레지스트층을 형성하는 공정;(Ⅲ) 상기 포토레지스트층을 선택적으로 노광하는 공정;(Ⅳ) 노광후에 포토레지스트층을 현상하여 포토레지스트 패턴을 형성하는 공정;(Ⅴ) 상기 포토레지스트 패턴을 마스크로 하여 층간절연층을, 에칭스토퍼층을 잔존시켜 에칭하는 공정;(Ⅵ) 포토레지스트 패턴을 플라스마 회화하는 공정;(Ⅶ) 에칭공정후의 포토레지스트 패턴을, 제 1 항 내지 제 13 항 중 어느 한 항에 기재된 포토레지스트용 박리액을 사용하여 층간절연층에서 박리하는 공정;(Ⅷ) 잔존하는 에칭 스토퍼층을 제거하는 공정; 및,(Ⅸ) 계속하여 기판을 물로 린스처리하는 공정을 포함하는 포토레지스트 박리방법.
- 제 15 항에 있어서, 상기 (Ⅶ) 공정에서 제 13 항에 기재된 포토레지스용 박리액을 사용하는 포토레지스트 박리방법.
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KR100447429B1 (ko) * | 1997-07-16 | 2004-11-03 | 주식회사 엘지생활건강 | 세정제 조성물 |
JPH1167632A (ja) | 1997-08-18 | 1999-03-09 | Mitsubishi Gas Chem Co Inc | 半導体装置用洗浄剤 |
JP3606738B2 (ja) * | 1998-06-05 | 2005-01-05 | 東京応化工業株式会社 | アッシング後の処理液およびこれを用いた処理方法 |
-
1999
- 1999-09-10 JP JP25811899A patent/JP3410403B2/ja not_active Expired - Fee Related
-
2000
- 2000-09-07 KR KR1020000053172A patent/KR100674387B1/ko active IP Right Grant
- 2000-09-08 TW TW089118531A patent/TW556053B/zh not_active IP Right Cessation
- 2000-09-08 US US09/657,777 patent/US6638899B1/en not_active Expired - Lifetime
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100842072B1 (ko) * | 2001-05-31 | 2008-06-30 | 에스케이케미칼주식회사 | 포토레지스트 제거액 조성물 및 이를 이용한 포토레지스트제거 방법 |
KR20030011480A (ko) * | 2001-08-03 | 2003-02-11 | 주식회사 덕성 | 포토레지스트용 박리액 조성물 |
KR100569533B1 (ko) * | 2001-10-25 | 2006-04-07 | 주식회사 하이닉스반도체 | 포토레지스트 세정용 조성물 |
US8158568B2 (en) | 2002-09-09 | 2012-04-17 | Tokyo Ohka Kogyo Co., Ltd. | Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith |
KR100690347B1 (ko) * | 2005-04-09 | 2007-03-09 | 주식회사 엘지화학 | 박리액 조성물, 이를 이용한 박리 방법 및 그 박리 장치 |
KR100823714B1 (ko) * | 2006-08-24 | 2008-04-21 | 삼성전자주식회사 | 폴리머 제거용 세정액 및 이를 이용한 폴리머 제거방법 |
WO2011008051A2 (ko) * | 2009-07-17 | 2011-01-20 | 동우 화인켐 주식회사 | 구리 또는 구리합금용 레지스트 제거용 조성물 |
WO2011008051A3 (ko) * | 2009-07-17 | 2011-04-21 | 동우 화인켐 주식회사 | 구리 또는 구리합금용 레지스트 제거용 조성물 |
WO2011031089A2 (ko) * | 2009-09-11 | 2011-03-17 | 동우 화인켐 주식회사 | 세정액 조성물 |
WO2011031089A3 (ko) * | 2009-09-11 | 2011-08-04 | 동우 화인켐 주식회사 | 세정액 조성물 |
Also Published As
Publication number | Publication date |
---|---|
KR100674387B1 (ko) | 2007-01-26 |
JP2001083713A (ja) | 2001-03-30 |
US6638899B1 (en) | 2003-10-28 |
JP3410403B2 (ja) | 2003-05-26 |
TW556053B (en) | 2003-10-01 |
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