JP4963815B2 - 洗浄方法および半導体装置の製造方法 - Google Patents
洗浄方法および半導体装置の製造方法 Download PDFInfo
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- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
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- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76883—Post-treatment or after-treatment of the conductive material
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Description
本実施形態例は、本発明にかかる洗浄方法を用いた半導体装置の製造方法の実施形態の一例であり、デュアルダマシン構造の形成に係わる。以下、図1〜図3の製造工程断面図を用いて本発明の第1実施形態を説明する。
本実施形態では、図1〜図3を用いて説明した製造工程の後に、下層配線18に連通するコンタクトプラグと上層配線を形成する際に、本発明の洗浄方法を適用した例について、説明する。
<実施例1>
まず、図3(h)を用いて説明した、エッチング・ストッパー層19をエッチング除去した後の基体Sの表面に、35℃、10MPaにて、2vol%のトリアリルアミンを添加した超臨界二酸化炭素流体を供給し、10分間の洗浄処理を行った。次いで、超臨界二酸化炭素流体のみで10分間リンスした。
実施例1の洗浄方法において、2vol%のトリス(3−アミノプロピル)アミンを添加した超臨界二酸化炭素流体を供給した以外は、実施例1と同様の条件で洗浄処理とリンスを行った。
実施例1の洗浄方法において、1vol%のトリアリルアミンと1vol%のトリス(3−アミノプロピル)アミンを添加した超臨界二酸化炭素流体を供給した以外は、実施例1と同様の条件で洗浄処理とリンスを行った。
上記実施例1〜3の洗浄方法に対する比較例1として、実施例1の洗浄方法において、2vol%のβジケトンを添加した超臨界二酸化炭素流体を供給した以外は、実施例1と同様の条件で洗浄処理とリンスを行った。
上記実施例1〜3の洗浄方法に対する比較例2として、実施例1の洗浄方法において、2vol%のジエチルアミノエタノールを添加した超臨界二酸化炭素流体を供給した以外は、実施例1と同様の条件で洗浄処理とリンスを行った。
上記実施例1〜3の洗浄方法に対する比較例3として、実施例1の洗浄方法において、2vol%の1−ジメチルアミノ−2−プロパノールを添加した超臨界二酸化炭素流体を供給した以外は、実施例1と同様の条件で洗浄処理とリンスを行った。
上記実施例1〜3の洗浄方法に対する比較例4として、実施例1の洗浄方法において、2vol%のトリエチルアミンを添加した超臨界二酸化炭素流体を供給した以外は、実施例1と同様の条件で洗浄処理とリンスを行った。
<実施例4>
まず、図4(k)を用いて説明した、CMP後の基体S’の表面に、35℃、10MPaにて、2vol%のトリアリルアミンを添加した超臨界二酸化炭素流体を供給し、10分間の洗浄処理を行った。次いで、超臨界二酸化炭素流体のみで10分間リンスした。なお、本実施例ではキャップ絶縁膜23を、SiOCからなる低誘電率絶縁膜で構成した。
実施例4の洗浄方法において、2vol%のトリス(3−アミノプロピル)アミンを添加した超臨界二酸化炭素流体を供給した以外は、実施例4と同様の条件で洗浄処理とリンスを行った。
実施例4の洗浄方法において、1vol%のトリアリルアミンと1vol%のトリス(3−アミノプロピル)アミンを添加した超臨界二酸化炭素流体を供給した以外は、実施例4と同様の条件で洗浄処理とリンスを行った。
上記実施例4〜6の洗浄方法に対する比較例5として、実施例4の洗浄方法において、2vol%のβジケトンを添加した超臨界二酸化炭素流体を供給した以外は、実施例4と同様の条件で洗浄処理とリンスを行った。
上記実施例4〜6の洗浄方法に対する比較例6として、実施例4の洗浄方法において、2vol%のジエチルアミノエタノールを添加した超臨界二酸化炭素流体を供給した以外は、実施例4と同様の条件で洗浄処理とリンスを行った。
上記実施例4〜6の洗浄方法に対する比較例7として、実施例4の洗浄方法において、2vol%の1−ジメチルアミノ−2−プロパノールを添加した超臨界二酸化炭素流体を供給した以外は、実施例4と同様の条件で洗浄処理とリンスを行った。
上記実施例4〜6の洗浄方法に対する比較例8として、実施例4の洗浄方法において、2vol%のトリエチルアミンを添加した超臨界二酸化炭素流体を供給した以外は、実施例4と同様の条件で洗浄処理とリンスを行った。
Claims (11)
- 基体の表面に付着した金属化合物を除去する洗浄方法であって、
トリアリルアミンおよびトリス(3−アミノプロピル)アミンの少なくとも1種を含有する超臨界二酸化炭素流体を、前記基体の表面に供給して洗浄する
洗浄方法。 - 基体の表面に付着した金属化合物を除去する洗浄方法であって、
トリス(3−アミノプロピル)アミンを含有する超臨界二酸化炭素流体を、前記基体の表面に供給して洗浄する
洗浄方法。 - 前記基体の表面側に銅を含む材料で形成された導電層が設けられており、前記金属化合物は銅化合物からなる
請求項1又は2記載の半導体装置の製造方法。 - 表面側に導電層が設けられた基板上に、絶縁膜を形成する工程と、
エッチングにより、前記絶縁膜に前記導電層に達する凹部を形成する工程と、
トリアリルアミンおよびトリス(3−アミノプロピル)アミンの少なくとも1種を含有する超臨界二酸化炭素流体を、前記絶縁膜に前記凹部が設けられた状態の前記基板の表面に供給して洗浄することで、前記導電層からの金属化合物を含むエッチング残渣を除去する工程とを有する
半導体装置の製造方法。 - 表面側に導電層が設けられた基板上に、絶縁膜を形成する工程と、
エッチングにより、前記絶縁膜に前記導電層に達する凹部を形成する工程と、
トリス(3−アミノプロピル)アミンを含有する超臨界二酸化炭素流体を、前記絶縁膜に前記凹部が設けられた状態の前記基板の表面に供給して洗浄することで、前記導電層からの金属化合物を含むエッチング残渣を除去する工程とを有する
半導体装置の製造方法。 - 前記絶縁膜は、酸化シリコンよりも誘電率の低い材料からなる低誘電率絶縁膜を有しており、当該低誘電率絶縁膜が前記凹部の側壁に露出されている
請求項4又は5記載の半導体装置の製造方法。 - 前記導電層は銅を含む材料で形成されており、前記金属化合物は銅化合物からなる
請求項4又は5記載の半導体装置の製造方法。 - 基板上に設けられた絶縁膜に凹部を形成する工程と、
前記凹部を埋め込む状態で、前記絶縁膜上に導電層を形成する工程と、
研磨により前記絶縁膜の表面と略同一面になるまで前記導電層を除去する工程と、
トリアリルアミンおよびトリス(3−アミノプロピル)アミンの少なくとも1種を含有する超臨界二酸化炭素流体を、前記絶縁膜の表面と略同一面に前記導電層が露出された状態の前記基板の表面に供給して洗浄することで、前記導電層からの金属化合物からなる研磨残渣を除去する工程とを有する
半導体装置の製造方法。 - 基板上に設けられた絶縁膜に凹部を形成する工程と、
前記凹部を埋め込む状態で、前記絶縁膜上に導電層を形成する工程と、
研磨により前記絶縁膜の表面と略同一面になるまで前記導電層を除去する工程と、
トリス(3−アミノプロピル)アミンを含有する超臨界二酸化炭素流体を、前記絶縁膜の表面と略同一面に前記導電層が露出された状態の前記基板の表面に供給して洗浄することで、前記導電層からの金属化合物からなる研磨残渣を除去する工程とを有する
半導体装置の製造方法。 - 前記絶縁膜は、酸化シリコンよりも誘電率の低い材料からなる低誘電率絶縁膜を有しており、前記絶縁膜の表面側は、前記低誘電率絶縁膜で形成されている
請求項8又は9記載の半導体装置の製造方法。 - 前記導電層は銅を含む材料で形成されており、前記金属化合物は銅化合物からなる
請求項8又は9記載の半導体装置の製造方法。
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JP2005258738A JP4963815B2 (ja) | 2005-09-07 | 2005-09-07 | 洗浄方法および半導体装置の製造方法 |
CNA2006800314568A CN101253605A (zh) | 2005-09-07 | 2006-09-05 | 洗涤方法以及半导体装置的制备方法 |
PCT/JP2006/317557 WO2007029703A1 (ja) | 2005-09-07 | 2006-09-05 | 洗浄方法および半導体装置の製造方法 |
US12/066,103 US7767585B2 (en) | 2005-09-07 | 2006-09-05 | Method of cleaning and process for producing semiconductor device |
TW095132855A TWI416606B (zh) | 2005-09-07 | 2006-09-06 | 洗淨方法及半導體裝置的製造方法 |
KR1020087004947A KR101275373B1 (ko) | 2005-09-07 | 2008-02-28 | 세정 방법 및 반도체 장치의 제조 방법 |
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US8252679B2 (en) * | 2010-02-10 | 2012-08-28 | United Microelectronics Corp. | Semiconductor process |
JP2017085093A (ja) * | 2015-10-29 | 2017-05-18 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US9786489B1 (en) * | 2017-03-17 | 2017-10-10 | United Microelectronics Corp. | Method of cleaning post-etch residues on a copper line |
JP7394563B2 (ja) * | 2019-09-12 | 2023-12-08 | 東京エレクトロン株式会社 | 基板処理装置の洗浄方法及び基板処理システム |
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US5868856A (en) | 1996-07-25 | 1999-02-09 | Texas Instruments Incorporated | Method for removing inorganic contamination by chemical derivitization and extraction |
US5868862A (en) | 1996-08-01 | 1999-02-09 | Texas Instruments Incorporated | Method of removing inorganic contamination by chemical alteration and extraction in a supercritical fluid media |
US6500605B1 (en) * | 1997-05-27 | 2002-12-31 | Tokyo Electron Limited | Removal of photoresist and residue from substrate using supercritical carbon dioxide process |
JPH1180787A (ja) * | 1997-09-10 | 1999-03-26 | Hitachi Ltd | 半導体基板の洗浄方法及びそれを用いた半導体装置の製造方法 |
RU2153203C2 (ru) * | 1998-05-22 | 2000-07-20 | Научно-производственное объединение "Радиевый институт им.В.Г.Хлопина" | Способ удаления неорганических, в том числе радиоактивных, загрязнений с поверхностей твердых тел |
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US6890853B2 (en) * | 2000-04-25 | 2005-05-10 | Tokyo Electron Limited | Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module |
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WO2007029703A1 (ja) | 2007-03-15 |
TWI416606B (zh) | 2013-11-21 |
CN101253605A (zh) | 2008-08-27 |
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