KR19990037374A - 연마방법 - Google Patents
연마방법 Download PDFInfo
- Publication number
- KR19990037374A KR19990037374A KR1019980044809A KR19980044809A KR19990037374A KR 19990037374 A KR19990037374 A KR 19990037374A KR 1019980044809 A KR1019980044809 A KR 1019980044809A KR 19980044809 A KR19980044809 A KR 19980044809A KR 19990037374 A KR19990037374 A KR 19990037374A
- Authority
- KR
- South Korea
- Prior art keywords
- polishing
- metal film
- polishing liquid
- weight
- substrate
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 322
- 238000000034 method Methods 0.000 title claims abstract description 112
- 239000007788 liquid Substances 0.000 claims abstract description 178
- 229910052751 metal Inorganic materials 0.000 claims abstract description 114
- 239000002184 metal Substances 0.000 claims abstract description 114
- 239000002245 particle Substances 0.000 claims abstract description 91
- 238000004140 cleaning Methods 0.000 claims abstract description 35
- 230000007797 corrosion Effects 0.000 claims abstract description 29
- 238000005260 corrosion Methods 0.000 claims abstract description 29
- 239000004065 semiconductor Substances 0.000 claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 claims abstract description 15
- 239000010949 copper Substances 0.000 claims description 88
- 229910052802 copper Inorganic materials 0.000 claims description 78
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 76
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 72
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 53
- 238000005530 etching Methods 0.000 claims description 48
- 239000000463 material Substances 0.000 claims description 46
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 32
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 31
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 28
- 239000002253 acid Substances 0.000 claims description 17
- 230000001590 oxidative effect Effects 0.000 claims description 17
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 16
- 229910017604 nitric acid Inorganic materials 0.000 claims description 16
- 229910052721 tungsten Inorganic materials 0.000 claims description 14
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 13
- 239000010937 tungsten Substances 0.000 claims description 13
- 239000007800 oxidant agent Substances 0.000 claims description 12
- 150000007524 organic acids Chemical class 0.000 claims description 9
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 8
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 8
- 239000012964 benzotriazole Substances 0.000 claims description 8
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 claims description 8
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 claims description 7
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 7
- 239000000908 ammonium hydroxide Substances 0.000 claims description 7
- 230000008859 change Effects 0.000 claims description 7
- 238000001514 detection method Methods 0.000 claims description 7
- 150000003839 salts Chemical class 0.000 claims description 7
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 6
- 230000003381 solubilizing effect Effects 0.000 claims description 6
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 5
- 238000007517 polishing process Methods 0.000 claims description 5
- 229910052700 potassium Inorganic materials 0.000 claims description 5
- 239000011591 potassium Substances 0.000 claims description 5
- 229910001080 W alloy Inorganic materials 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 4
- 238000001228 spectrum Methods 0.000 claims description 4
- 239000004094 surface-active agent Substances 0.000 claims description 4
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- 235000019270 ammonium chloride Nutrition 0.000 claims description 3
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 150000003863 ammonium salts Chemical class 0.000 claims description 2
- 239000004575 stone Substances 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 4
- 150000003658 tungsten compounds Chemical class 0.000 claims 3
- 229910045601 alloy Inorganic materials 0.000 claims 2
- 239000000956 alloy Substances 0.000 claims 2
- 150000003609 titanium compounds Chemical class 0.000 claims 2
- 239000005749 Copper compound Substances 0.000 claims 1
- 150000003868 ammonium compounds Chemical class 0.000 claims 1
- 125000003354 benzotriazolyl group Chemical group N1N=NC2=C1C=CC=C2* 0.000 claims 1
- 150000001880 copper compounds Chemical class 0.000 claims 1
- 239000002195 soluble material Substances 0.000 claims 1
- 239000004744 fabric Substances 0.000 abstract description 44
- 230000003628 erosive effect Effects 0.000 abstract description 27
- 230000000694 effects Effects 0.000 abstract description 23
- 230000008569 process Effects 0.000 abstract description 22
- 230000002829 reductive effect Effects 0.000 abstract description 17
- 230000015572 biosynthetic process Effects 0.000 abstract description 8
- 230000006378 damage Effects 0.000 abstract description 7
- 230000009467 reduction Effects 0.000 abstract description 7
- 239000003082 abrasive agent Substances 0.000 abstract description 4
- 239000000428 dust Substances 0.000 abstract description 4
- 238000011086 high cleaning Methods 0.000 abstract description 2
- 239000013317 conjugated microporous polymer Substances 0.000 description 143
- 210000003643 myeloid progenitor cell Anatomy 0.000 description 143
- IERHLVCPSMICTF-XVFCMESISA-N CMP group Chemical group P(=O)(O)(O)OC[C@@H]1[C@H]([C@H]([C@@H](O1)N1C(=O)N=C(N)C=C1)O)O IERHLVCPSMICTF-XVFCMESISA-N 0.000 description 142
- 239000010408 film Substances 0.000 description 90
- 239000010410 layer Substances 0.000 description 72
- 239000006061 abrasive grain Substances 0.000 description 28
- 239000000126 substance Substances 0.000 description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 23
- 229910052814 silicon oxide Inorganic materials 0.000 description 17
- 229910052718 tin Inorganic materials 0.000 description 16
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 15
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 14
- 239000000243 solution Substances 0.000 description 10
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 9
- 230000007547 defect Effects 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- 238000000227 grinding Methods 0.000 description 8
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 8
- 238000006748 scratching Methods 0.000 description 8
- 230000002393 scratching effect Effects 0.000 description 8
- 238000005406 washing Methods 0.000 description 8
- 235000011114 ammonium hydroxide Nutrition 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 229960002449 glycine Drugs 0.000 description 7
- 235000013905 glycine and its sodium salt Nutrition 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 6
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 239000005751 Copper oxide Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 5
- 229910000431 copper oxide Inorganic materials 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 235000005985 organic acids Nutrition 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 4
- 150000007513 acids Chemical class 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- -1 for example Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 235000002906 tartaric acid Nutrition 0.000 description 4
- 239000011975 tartaric acid Substances 0.000 description 4
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000003750 conditioning effect Effects 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 235000019253 formic acid Nutrition 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000008213 purified water Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 239000003518 caustics Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 229920000058 polyacrylate Polymers 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 2
- 239000001384 succinic acid Substances 0.000 description 2
- 230000001988 toxicity Effects 0.000 description 2
- 231100000419 toxicity Toxicity 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 1
- ZNXDDBROLGGBLM-UHFFFAOYSA-N 2-hydroxybutanedioic acid nitric acid Chemical compound [N+](=O)(O)[O-].OC(C(=O)O)CC(=O)O ZNXDDBROLGGBLM-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
- LEVWYRKDKASIDU-IMJSIDKUSA-N L-cystine Chemical compound [O-]C(=O)[C@@H]([NH3+])CSSC[C@H]([NH3+])C([O-])=O LEVWYRKDKASIDU-IMJSIDKUSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229920002845 Poly(methacrylic acid) Polymers 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- 206010052428 Wound Diseases 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- WDJHALXBUFZDSR-UHFFFAOYSA-N acetoacetic acid Chemical compound CC(=O)CC(O)=O WDJHALXBUFZDSR-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 229960003067 cystine Drugs 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- WNAHIZMDSQCWRP-UHFFFAOYSA-N dodecane-1-thiol Chemical compound CCCCCCCCCCCCS WNAHIZMDSQCWRP-UHFFFAOYSA-N 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 235000013373 food additive Nutrition 0.000 description 1
- 239000002778 food additive Substances 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000001261 hydroxy acids Chemical class 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- NIFHFRBCEUSGEE-UHFFFAOYSA-N oxalic acid Chemical compound OC(=O)C(O)=O.OC(=O)C(O)=O NIFHFRBCEUSGEE-UHFFFAOYSA-N 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 125000005498 phthalate group Chemical group 0.000 description 1
- 150000003022 phthalic acids Chemical group 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229910001414 potassium ion Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000005063 solubilization Methods 0.000 description 1
- 230000007928 solubilization Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
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- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
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- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
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Abstract
Description
Claims (48)
- 금속막의 적어도 일부를 제거하는 연마방법에 있어서,1중량% 미만의 연마숫돌입자를 포함하고 pH 및 산화환원전위가 상기 금속막의 부식영역인 연마액을 사용해서 상기 금속막표면을 기계적으로 마찰시키는 것을 특징으로 하는 연마방법.
- 절연막상에 형성되고 금속막의 적어도 일부를 제거하는 연마방법에 있어서,1중량% 미만의 연마숫돌입자, 산화성 물질 및 산화물을 수용성화하는 물질을 포함하고, pH 및 산화환원전위가 상기 금속막의 부식영역인 연마액을 사용해서 상기 금속막표면을 기계적으로 마찰시키는 것을 특징으로 하는 연마방법.
- 제2항에 있어서,상기 금속막은 동 또는 동을 주성분으로 하는 합금 또는 동화합물을 포함하는 것을 특징으로 하는 연마방법.
- 제2항에 있어서,상기 금속막은 텅스텐이나 텅스텐합금 또는 텅스텐화합물을 포함하는 것을 특징으로 하는 연마방법.
- 제2항에 있어서,상기 금속막은 티탄이나 티탄합금 또는 티탄화합물을 포함하는 것을 특징으로 하는 연마방법.
- 제5항에 있어서,상기 티탄화합물은 질화티탄인 것을 특징으로 하는 연마방법.
- 제2항∼제6항 중의 어느 한항에 있어서,상기 연마액은 상기 금속막에 대한 방식성 물질 또는 계면활성제를 포함하는 것을 특징으로 하는 연마방법.
- 제2항∼제7항 중의 어느 한항에 있어서,상기 연마액은 연마하는 기판중에 존재하는 금속막에 대한 방식성 물질을 포함하는 것을 특징으로 하는 연마방법.
- 제7항 또는 제8항에 있어서,상기 방식성 물질은 벤조트리아졸 또는 그의 유도체인 것을 특징으로 하는 연마방법.
- 제9항에 있어서,상기 벤조트리아졸 또는 그의 유도체의 농도는 0.001∼1중량%의 범위내에 있는 것을 특징으로 하는 연마방법.
- 제7항에 있어서,상기 계면활성제는 폴리아크릴산암모늄염인 것을 특징으로 하는 연마방법.
- 제2항∼제10항 중의 어느 한항에 있어서,상기 산화성 물질은 과산화수소인 것을 특징으로 하는 연마방법.
- 제2항∼제10항 중의 어느 한항에 있어서,상기 산화성 물질은 적어도 질산 제2철 및 과옥소산칼륨중 어느 1개를 포함하는 것을 특징으로 하는 연마방법.
- 제2항∼제13항 중의 어느 한항에 있어서,상기 산화물을 수용성화하는 물질은 산 또는 그의 염을 포함하는 것을 특징으로 하는 연마방법.
- 제14항에 있어서,상기 산은 유기산인 것을 특징으로 하는 연마방법.
- 제15항에 있어서,상기 유기산은 구연산 또는 능금산인 것을 특징으로 하는 연마방법.
- 제2항∼제13항 중의 어느 한항에 있어서,상기 산화물을 수용성화하는 물질은 암모늄화합물을 포함하는 것을 특징으로 하는 연마방법.
- 제2항∼제13항 중의 어느 한항에 있어서,상기 산화물을 수용성화하는 물질은 적어도 수산화암모늄, 질산암모늄 및 염화암모늄중 어느 1개를 포함하는 것을 특징으로 하는 연마방법.
- 제1항∼제18항 중의 어느 한항에 있어서,상기 연마숫돌입자의 농도는 0.5중량% 이하인 것을 특징으로 하는 연마방법.
- 제1항∼제18항 중의 어느 한항에 있어서,상기 연마숫돌입자의 농도는 0.1중량% 이하인 것을 특징으로 하는 연마방법.
- 제1항∼제l8항 중의 어느 한항에 있어서,상기 연마숫돌입자의 농도는 0.05중량% 이하인 것을 특징으로 하는 연마방법.
- 제1항∼제18항 중의 어느 한항에 있어서,상기 연마숫돌입자의 농도는 0.01중량% 이하인 것을 특징으로 하는 연마방법.
- 제1항∼제l8항 중의 어느 한항에 있어서,상기 연마숫돌입자의 농도는 0.001중량% 이하인 것을 특징으로 하는 연마방법.
- 제1항∼제18항 중의 어느 한항에 있어서,상기 연마숫돌입자의 농도는 0.0001중량% 이하인 것을 특징으로 하는 연마방법.
- 제1항∼제18항 중의 어느 한항에 있어서,상기 연마액은 연마숫돌입자를 포함하지 않는 것을 특징으로 하는 연마방법.
- 제1항∼제18항 중의 어느 한항에 있어서,상기 연마액중의 연마숫돌입자의 농도는 상기 연마숫돌입자를 포함하지 않은 상기 연마액을 사용했을 때의 연마속도의 오차범위내의 연마속도로 되는 농도범위내에 있는 것을 특징으로 하는 연마방법.
- 제1항∼제26항 중의 어느 한항에 있어서,상기 연마액을 사용했을 때의 연마속도가 상기 연마액중에 상기 금속막을 침지했 때의 에칭속도의 10배이상인 것을 특징으로 하는 연마방법.
- 제1항∼제27항 중의 어느 한항에 있어서,상기 연마액을 사용했을때의 연마속도가 1Onm/min을 초과하는 것을 특징으로 하는 연마방법.
- 절연막상에 형성된 금속막의 적어도 일부를 제거하는 연마방법에 있어서,1중량% 미만의 연마숫돌입자, 과산화수소, 구연산 또는 능금산을 포함하는 연마액을 사용하여 상기 금속막표면을 마찰시키는 것에 의해 상기 금속막표면을 제거하는 것을 특징으로 하는 연마방법.
- 절연막상에 형성된 금속막의 적어도 일부를 제거하는 연마방법에 있어서,l중량% 미만의 연마숫돌입자, 산화성 물질, 산화물을 수용성화하는 물질 및 방식성 물질을 포함하고, pH 및 산화환원전위가 상기 금속막의 부식영역인 연마액을 사용해서 상기 금속막표면을 기계적으로 마찰시키는 것에 의해 상기 금속막표면을 제거하는 것을 특징으로 하는 연마방법.
- 제30항에 있어서,상기 방식성 물질은 벤조트리아졸 또는 그의 유도체인 것을 특징으로 하는 연마방법.
- 절연막상에 형성된 금속막의 적어도 일부를 제거하는 연마방법에 있어서,1중량% 미만의 연마숫돌입자, 질산 및 방식성 물질을 포함하는 연마액을 사용해서 상기 금속막표면을 마찰시키는 것에 의해 상기 금속막표면을 제거하는 것을 특징으로 하는 연마방법.
- 불순물도프층을 갖는 기판을 준비하는 공정,상기 불순물도프층상에 개구부를 갖는 절연막을 형성하는 공정,상기 절연막이 형성된 기판상에 금속막을 형성하는 공정,1중량% 미만의 연마숫돌입자, 산화성 물질 및 산화물을 수용성화하는 물질을 포함하고, pH 및 산화환원전위가 상기 금속막의 부식영역인 연마액을 사용해서 상기 금속막표면을 기계적으로 마찰시키는 것에 의해 상기 금속막표면을 제거하고 상기 절연막을 노출시키는 공정,그 후, 상기 기판을 세정하는 공정 및세정된 상기 기판을 건조시키는 공정을 갖는 것을 특징으로 하는 반도체장치의 제조방법.
- 제33항에 있어서,상기 연마숫돌입자의 농도는 0.01중량% 이하인 것을 특징으로 하는 반도체장치의 제조방법.
- 제l 배선층을 갖는 기판을 준비하는 공정,상기 제1 배선층이 노출되는 개구부를 갖는 제1 절연막을 형성하는 공정,상기 절연막이 형성된 기판상에 금속막을 형성하는 공정,1중량% 미만의 연마숫돌입자, 산화성 물질 및 산화물을 수용성화하는 물질을 포함하고, pH 및 산화환원전위가 상기 금속막의 부식영역인 연마액을 사용해서 상기 금속막표면을 기계적으로 마찰시키는 것에 의해 상기 금속막표면을 제거하고 상기 절연막을 노출시키는 공정,그 후, 상기 기판을 세정하는 공정 및세정된 상기 기판을 건조시키는 공정을 갖는 것을 특징으로 하는 반도체장치의 제조방법.
- 제35항에 있어서,상기 연마숫돌입자의 농도는 0.01중량% 이하인 것을 특징으로 하는 반도체장치의 제조방법.
- 도전체층을 갖는 기판을 준비하는 공정,상기 도전체층상에 개구부를 갖는 절연막을 형성하는 공정,상기 절연막이 형성된 기판상에 질화티탄막과 동을 주성분으로 하는 금속막을 포함하는 적층막을 형성하는 공정,0.01중량% 미만의 알루미나연마숫돌입자, 과산화수소, 구연산 또는 능금산을 포함하는 연마액을 사용해서 상기 적층막을 기계적으로 마찰시키는 공정,그 후, 상기 기판을 세정하는 공정 및세정된 상기 기판을 건조시키는 공정을 갖는 것을 특징으로 하는 반도체장치의 제조방법.
- 도전체층을 갖는 기판을 준비하는 공정,상기 도전체층상에 제1 개구부를 갖는 제1 절연막을 형성하는 공정,홈형상의 개구부 및 상기 제1 개구부가 노출하는 제2 개구부를 갖는 제2 절연막을 상기 기판상에 형성하는 공정,상기 제2 절연막이 형성된 기판상에 금속막을 형성하는 공정,1중량% 미만의 연마숫돌입자, 산화성 물질 및 상기 금속막의 산화물을 수용성화하는 물질을 포함하고, pH 및 산화환원전위가 상기 금속막의 부식영역인 연마액을 사용해서 상기 금속막을 마찰시키는 공정,그 후, 상기 기판을 세정하는 공정 및세정된 상기 기판을 건조시키는 공정을 갖는 것을 특징으로 하는 반도체장치의 제조방법.
- 제37항 또는 제38항에 있어서,상기 연마액은 벤조트리아졸을 더 포함하는 것을 특징으로 하는 반도체장치의 제조방법.
- 제1 배선층을 갖는 기판을 준비하는 공정,상기 제1 배선층이 노출되는 개구부를 갖는 제1 절연막을 형성하는 공정,상기 절연막이 형성된 기판상에 금속막을 형성하는 공정,1중량% 미만의 연마숫돌입자, 산화성 물질, 산화물을 수용성화하는 물질 및 상기 제1 배선재료에 대한 방식성 물질을 포함하고, pH 및 산화환원전위가 상기 금속막의 부식영역인 연마액을 사용해서 상기 금속막표면을 기계적으로 마찰시키는 것에 의해 상기 금속막표면을 제거하고 상기 절연막을 노출시키는 공정 및그 후, 상기 기판을 세정하는 공정을 갖는 것을 특징으로 하는 반도체장치의 제조방법.
- 제40항에 있어서,상기 방식성 물질은 벤조트리아졸 또는 그의 유도체인 것을 특징으로 하는 연마방법.
- 제1항∼제41항 중의 어느 한항에 있어서,상기 연마처리의 종점검출은 연마장치의 연마정반 또는 웨이퍼홀더의 회전토크변화를 사용해서 이루어지는 것을 특징으로 하는 연마방법.
- 제1항∼제41항 중의 어느 한항에 있어서,상기 연마처리의 종점검출은 연마처리후의 연마액의 광학적 스펙트럼을 사용해서 이루어지는 것을 특징으로 하는 연마방법.
- 제1항∼제41항 중의 어느 한항에 있어서,상기 연마처리의 종점검출은 기판으로 부터의 광반사 스펙트럼을 사용해서 이루어지는 것을 특징으로 하는 연마방법.
- 금속막1을 내부에 포함하는 절연막상에 형성된 금속막1의 적어도 일부를 제거하는 연마방법에 있어서,상기 금속막2에 대한 방식제를 포함하는 연마액을 사용하여 상기 금속막1 표면을 마찰시키는 것에 의해 상기 금속막1 표면을 제거하는 것을 특징으로 하는 연마방법.
- 제45항에 있어서,상기 금속막1이 동 또는 동을 주성분으로 하는 합금 또는 동합금이고, 상기 금속막2가 텅스텐이나 텅스텐합금 또는 텅스텐화합물인 것을 특징으로 하는 연마방법.
- 제45항에 있어서,상기 방식제가 벤조트리아졸 또는 그의 유도체인 것을 특징으로 하는 연마방법.
- 벤조트리아졸 또는 그의 유도체를 포함하고,절연막상에 형성된 텅스텐이나 텅스텐합금 또는 텅스텐화합물의 적어도 일부를 제거하기 위한 것을 특징으로 하는 연마액.
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Also Published As
Publication number | Publication date |
---|---|
US20070029285A1 (en) | 2007-02-08 |
US6596638B1 (en) | 2003-07-22 |
TW380083B (en) | 2000-01-21 |
EP1760127A2 (en) | 2007-03-07 |
DE69836612D1 (de) | 2007-01-25 |
JP3371775B2 (ja) | 2003-01-27 |
EP0913442A2 (en) | 1999-05-06 |
CN1974129A (zh) | 2007-06-06 |
DE69836612T2 (de) | 2007-10-25 |
US7563716B2 (en) | 2009-07-21 |
KR100624589B1 (ko) | 2006-11-30 |
US20070167015A1 (en) | 2007-07-19 |
KR20050101128A (ko) | 2005-10-20 |
US6117775A (en) | 2000-09-12 |
KR100724023B1 (ko) | 2007-06-04 |
US7279425B2 (en) | 2007-10-09 |
EP0913442A3 (en) | 2002-03-06 |
EP0913442B1 (en) | 2006-12-13 |
CN1216727A (zh) | 1999-05-19 |
JPH11135466A (ja) | 1999-05-21 |
CN1298508C (zh) | 2007-02-07 |
US20050074967A1 (en) | 2005-04-07 |
SG95588A1 (en) | 2003-04-23 |
US7132367B2 (en) | 2006-11-07 |
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