KR100500517B1 - 반도체 웨이퍼용 cmp 설비 - Google Patents
반도체 웨이퍼용 cmp 설비 Download PDFInfo
- Publication number
- KR100500517B1 KR100500517B1 KR10-2002-0064457A KR20020064457A KR100500517B1 KR 100500517 B1 KR100500517 B1 KR 100500517B1 KR 20020064457 A KR20020064457 A KR 20020064457A KR 100500517 B1 KR100500517 B1 KR 100500517B1
- Authority
- KR
- South Korea
- Prior art keywords
- polishing pad
- slurry
- wafer
- high speed
- cleaning liquid
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract description 12
- 238000005498 polishing Methods 0.000 claims abstract description 102
- 239000002002 slurry Substances 0.000 claims abstract description 69
- 238000004140 cleaning Methods 0.000 claims abstract description 40
- 239000007788 liquid Substances 0.000 claims abstract description 32
- 230000003750 conditioning effect Effects 0.000 claims abstract description 24
- 239000007921 spray Substances 0.000 claims abstract description 10
- 239000000428 dust Substances 0.000 claims description 13
- 238000007711 solidification Methods 0.000 claims description 7
- 230000008023 solidification Effects 0.000 claims description 7
- 239000003595 mist Substances 0.000 claims description 4
- 238000005507 spraying Methods 0.000 claims description 4
- 238000007517 polishing process Methods 0.000 abstract description 16
- 239000003517 fume Substances 0.000 abstract description 8
- 235000012431 wafers Nutrition 0.000 description 48
- 238000000034 method Methods 0.000 description 21
- 238000005520 cutting process Methods 0.000 description 6
- 239000000470 constituent Substances 0.000 description 4
- 230000006378 damage Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000010924 continuous production Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
- B24B37/345—Feeding, loading or unloading work specially adapted to lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
Claims (2)
- (삭제)
- 테이블 상에 위치되어 고속으로 회전하는 폴리싱 패드와;상기 폴리싱 패드 표면에 슬러리를 공급하는 슬러리 공급부와;상기 폴리싱 패드 상에 위치되는 웨이퍼를 고속 회전시켜 연마하는 헤드부와;컨디셔너를 고속으로 회전시켜 상기 폴리싱 패드의 표면이 평탄하도록 절삭하는 컨디셔닝부와;상기 헤드부와 상기 컨디셔닝부에 근접하는 상부에 위치되는 세정액 공급라인; 및상기 세정액 공급라인의 단부에 설치되어 폴리싱 패드와 웨이퍼의 마찰에 의해 유발되는 슬러리 또는 슬러리의 분진이 비상하는 것을 방지하고, 상기 슬러리 또는 슬러리의 분진에 의해 상기 헤드부 및 상기 컨디셔닝부에서 유발되는 각종 이물질의 고화를 방지하기 위해 상기 폴리싱 패드, 상기 헤드부 및 상기 컨디셔닝부에 세정액을 안개형태로 분무시키는 적어도 하나 이상의 분무노즐을 포함함을 특징으로 하는 반도체 웨이퍼용 CMP 설비.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0064457A KR100500517B1 (ko) | 2002-10-22 | 2002-10-22 | 반도체 웨이퍼용 cmp 설비 |
JP2003130402A JP2004146775A (ja) | 2002-10-22 | 2003-05-08 | 半導体ウェハ用cmp設備 |
US10/655,305 US6899609B2 (en) | 2002-10-22 | 2003-09-05 | CMP equipment for use in planarizing a semiconductor wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0064457A KR100500517B1 (ko) | 2002-10-22 | 2002-10-22 | 반도체 웨이퍼용 cmp 설비 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040035344A KR20040035344A (ko) | 2004-04-29 |
KR100500517B1 true KR100500517B1 (ko) | 2005-07-12 |
Family
ID=32171503
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2002-0064457A KR100500517B1 (ko) | 2002-10-22 | 2002-10-22 | 반도체 웨이퍼용 cmp 설비 |
Country Status (3)
Country | Link |
---|---|
US (1) | US6899609B2 (ko) |
JP (1) | JP2004146775A (ko) |
KR (1) | KR100500517B1 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR200477667Y1 (ko) * | 2015-01-27 | 2015-07-09 | 전용준 | 바텀 플레이트를 구비한 cmp 장비 |
KR20220013832A (ko) | 2020-07-27 | 2022-02-04 | 제이에이치테크놀러지 주식회사 | 화학적 기계 연마 장비의 헤드용 슬러리 세정 구조 |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004223665A (ja) * | 2003-01-24 | 2004-08-12 | Sony Corp | 電解研磨装置および研磨方法 |
US20050113006A1 (en) * | 2003-11-21 | 2005-05-26 | Wang Michael S. | Chemical mechanical polishing apparatus and method to minimize slurry accumulation and scratch excursions |
US7258599B2 (en) * | 2005-09-15 | 2007-08-21 | Fujitsu Limited | Polishing machine, workpiece supporting table pad, polishing method and manufacturing method of semiconductor device |
JP2012148376A (ja) * | 2011-01-20 | 2012-08-09 | Ebara Corp | 研磨方法及び研磨装置 |
US8998677B2 (en) | 2012-10-29 | 2015-04-07 | Wayne O. Duescher | Bellows driven floatation-type abrading workholder |
US9199354B2 (en) | 2012-10-29 | 2015-12-01 | Wayne O. Duescher | Flexible diaphragm post-type floating and rigid abrading workholder |
US9233452B2 (en) | 2012-10-29 | 2016-01-12 | Wayne O. Duescher | Vacuum-grooved membrane abrasive polishing wafer workholder |
US8998678B2 (en) | 2012-10-29 | 2015-04-07 | Wayne O. Duescher | Spider arm driven flexible chamber abrading workholder |
US9604339B2 (en) | 2012-10-29 | 2017-03-28 | Wayne O. Duescher | Vacuum-grooved membrane wafer polishing workholder |
US9039488B2 (en) | 2012-10-29 | 2015-05-26 | Wayne O. Duescher | Pin driven flexible chamber abrading workholder |
US8845394B2 (en) | 2012-10-29 | 2014-09-30 | Wayne O. Duescher | Bellows driven air floatation abrading workholder |
US9011207B2 (en) | 2012-10-29 | 2015-04-21 | Wayne O. Duescher | Flexible diaphragm combination floating and rigid abrading workholder |
US20140323017A1 (en) * | 2013-04-24 | 2014-10-30 | Applied Materials, Inc. | Methods and apparatus using energized fluids to clean chemical mechanical planarization polishing pads |
CN104029130B (zh) * | 2014-06-06 | 2016-06-15 | 中国科学院长春光学精密机械与物理研究所 | 一种智能抛光液供给循环装置 |
US9687960B2 (en) | 2014-10-24 | 2017-06-27 | Applied Materials, Inc. | Polishing pad cleaning systems employing fluid outlets oriented to direct fluid under spray bodies and towards inlet ports, and related methods |
JP6313196B2 (ja) | 2014-11-20 | 2018-04-18 | 株式会社荏原製作所 | 研磨面洗浄装置、研磨装置、および研磨面洗浄装置の製造方法 |
WO2016093963A1 (en) * | 2014-12-12 | 2016-06-16 | Applied Materials, Inc. | System and process for in situ byproduct removal and platen cooling during cmp |
US10926378B2 (en) | 2017-07-08 | 2021-02-23 | Wayne O. Duescher | Abrasive coated disk islands using magnetic font sheet |
JP2020031181A (ja) * | 2018-08-24 | 2020-02-27 | 株式会社荏原製作所 | 基板処理装置、基板処理方法、及び基板処理装置を制御する方法をコンピュータに実行させるためのプログラムを格納した記憶媒体 |
US11691241B1 (en) * | 2019-08-05 | 2023-07-04 | Keltech Engineering, Inc. | Abrasive lapping head with floating and rigid workpiece carrier |
CN112338795A (zh) * | 2019-12-02 | 2021-02-09 | 深圳市安达工业设计有限公司 | 一种便于清理的化学机械抛光设备的抛光方法 |
US11724355B2 (en) | 2020-09-30 | 2023-08-15 | Applied Materials, Inc. | Substrate polish edge uniformity control with secondary fluid dispense |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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US5725417A (en) * | 1996-11-05 | 1998-03-10 | Micron Technology, Inc. | Method and apparatus for conditioning polishing pads used in mechanical and chemical-mechanical planarization of substrates |
KR19980040764A (ko) * | 1996-11-29 | 1998-08-17 | 김광호 | 반도체 케미컬탱크의 세정장치 |
JPH10242100A (ja) * | 1997-02-28 | 1998-09-11 | Fujimori Gijutsu Kenkyusho:Kk | 半導体製造装置の洗浄装置 |
JPH11104947A (ja) * | 1997-10-03 | 1999-04-20 | Toshiro Doi | 研磨パッドのドレッシング装置 |
KR19990037374A (ko) * | 1997-10-31 | 1999-05-25 | 가나이 쓰도무 | 연마방법 |
KR20000065895A (ko) * | 1999-04-10 | 2000-11-15 | 윤종용 | 화학 기계적 폴리싱 장치 |
KR20020076904A (ko) * | 2001-03-31 | 2002-10-11 | (주)케이.씨.텍 | 유체를 분사하는 장치 |
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JPH04196425A (ja) * | 1990-11-28 | 1992-07-16 | Sigma Merutetsuku Kk | 薬液処理装置 |
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JPH1074686A (ja) * | 1996-08-29 | 1998-03-17 | Sigma Merutetsuku Kk | 薬液処理方法、および、装置 |
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US6206760B1 (en) * | 1999-01-28 | 2001-03-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for preventing particle contamination in a polishing machine |
KR100304706B1 (ko) | 1999-06-16 | 2001-11-01 | 윤종용 | 화학기계적 연마장치 및 연마 헤드 내부의 오염 물질 세척방법 |
US6405399B1 (en) | 1999-06-25 | 2002-06-18 | Lam Research Corporation | Method and system of cleaning a wafer after chemical mechanical polishing or plasma processing |
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JP2002219645A (ja) * | 2000-11-21 | 2002-08-06 | Nikon Corp | 研磨装置、この研磨装置を用いた半導体デバイス製造方法並びにこの製造方法によって製造された半導体デバイス |
-
2002
- 2002-10-22 KR KR10-2002-0064457A patent/KR100500517B1/ko active IP Right Grant
-
2003
- 2003-05-08 JP JP2003130402A patent/JP2004146775A/ja active Pending
- 2003-09-05 US US10/655,305 patent/US6899609B2/en not_active Expired - Lifetime
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5725417A (en) * | 1996-11-05 | 1998-03-10 | Micron Technology, Inc. | Method and apparatus for conditioning polishing pads used in mechanical and chemical-mechanical planarization of substrates |
KR19980040764A (ko) * | 1996-11-29 | 1998-08-17 | 김광호 | 반도체 케미컬탱크의 세정장치 |
JPH10242100A (ja) * | 1997-02-28 | 1998-09-11 | Fujimori Gijutsu Kenkyusho:Kk | 半導体製造装置の洗浄装置 |
JPH11104947A (ja) * | 1997-10-03 | 1999-04-20 | Toshiro Doi | 研磨パッドのドレッシング装置 |
KR19990037374A (ko) * | 1997-10-31 | 1999-05-25 | 가나이 쓰도무 | 연마방법 |
KR20000065895A (ko) * | 1999-04-10 | 2000-11-15 | 윤종용 | 화학 기계적 폴리싱 장치 |
KR20020076904A (ko) * | 2001-03-31 | 2002-10-11 | (주)케이.씨.텍 | 유체를 분사하는 장치 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR200477667Y1 (ko) * | 2015-01-27 | 2015-07-09 | 전용준 | 바텀 플레이트를 구비한 cmp 장비 |
KR20220013832A (ko) | 2020-07-27 | 2022-02-04 | 제이에이치테크놀러지 주식회사 | 화학적 기계 연마 장비의 헤드용 슬러리 세정 구조 |
Also Published As
Publication number | Publication date |
---|---|
KR20040035344A (ko) | 2004-04-29 |
JP2004146775A (ja) | 2004-05-20 |
US20040087257A1 (en) | 2004-05-06 |
US6899609B2 (en) | 2005-05-31 |
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