五 '發明説明（ A7 B7 ija領域： 本發明大致係關係於化學機械研磨基板， 玲，女Hq、λ rm ^明白地 —„---_—一---— (請先閱讀背面之注意事項再填寫本頁> ° s ;用以由基板上去除研漿之設備與方法。 t明背景：' -般藉由將導體、半導體或絕緣層順序沉積 上：可於基板上形成一積體電路。於每一層沉積後，：芦 可以被蝕刻以創造電路特性。一製造步驟涉及金屬通孔: 插塞及線（形成，以便於薄膜電路間提供導電路徑。金 通孔的形成可藉由沉積一金屬層於一層圖案絕緣層上，然 後，將金屬層平坦化直到絕緣層露出而達成。保留於 ▼ 丁 _ 、-° 層之升起圖案間之部份金屬層可形成金屬通孔、’ 路。 烟基及線 經濟部智慧財產局員工消費合作社印製 化學機械研磨法（CMP)為一可接受之平坦化方法之 一。此平坦化方法典型需要將基板安裝於一載台或研磨= 上。基板之外露面係被靠在旋轉研磨墊上。研磨墊可以是 一標準墊或一固定研磨墊。一標準墊具有耐磨粗糙面，而 固疋研磨墊具有被保持於屏蔽媒介中之研磨粒子。載頭提 供可控制之負載，即壓力，於基板上，以將其壓向研磨墊。 一包含至少一化學反應劑及研磨粒子（若所用者為標準墊 的話）或去離子水（若所用者為固定研磨墊時）之研漿係被 供給至研磨墊之表面。一有效CMP處理並不只提供—高 研磨率，其同時也提供一光製（無小形粗糙度）及平坦（無大 形拓樸）的基板表面。 第4頁 衣紙張尺度適用中國國家標準（CNS ) A4規格（2i〇X297公釐） A7 B7 經濟部智慧財產局員工消費合作社印製 第5頁 五、發明説明（ 於使用CMP之一些製造處理 句$ 中’特别是金屬研磨、 淺溝渠絕緣、及其他鑲嵌處理中， 了用二或多種研漿來研 磨基板。該兩種研漿可以具有不 成伤。~研漿可以較另 —研漿為酸，研漿可以含有不@ # 1 j成份或大小之膠質粒子， 或者，這些研漿可以具有不同濃户 度 < 添加劑，例如抗氧化 劑或抗蚀劑。若一研聚滴虫其仙猫妝λ '、畀他研漿混合，則第二種研漿 之化學成份會改變，且CMP處理將掛沾a ± 您王莳.¾:的掸法信賴。例如， 了以在弟一研磨塾上以一酸性研难办.彳4 听及來進订一啟始研磨步 写4> ’ _0_可以在弟二研磨卷上以__ iA „ J,*.. 叮Μ 土上以鹼性研漿來進行第二研磨 步驟。當基板被由第一研磨熱傳遞至第二研磨墊時，研漿 會黏著至基板或承載頭上。當第一酸性研漿與第二鹼性研 漿混合時，會改變第二研裝之ρΗ值。第二研漿之化學ρΗ 值的改變會降低研磨速率及產出量並降低製程良率。 一種清洗基板之方法乃是當基板在第一及第二研磨 塾間傳送時，對基板下側噴水。可惜，此一噴水法並不能 去除基板上所有的研漿。 i明目的及概诚： 於一方面’本發明有關於一化學機械研磨設備。該設 備具有一第一旋轉平台，以支持第一研磨墊；一第二旋轉 平台，以支持第二研磨墊；一承載頭可動件，可沿著於第 一及第二平台間之路徑移動；以及，一位於第一及第二平 台間路徑上的清洗站。清洗站可以包含一清洗杯；一刷 部，該刷部至少有一部份係位於清洗杯内且當承載頭係位 表紙張尺度適用中國國家標準（CNS ) A4規格（210 X 29"7公釐） (請先閱讀背面之注意事項再填寫本瓦)Five 'invention description (A7 B7 ija field: The present invention is roughly related to chemical mechanical polishing substrates, Ling, female Hq, λ rm ^ Clearly-"---_-a ----- (Please read the note on the back first Fill in this page again for the items > ° s; Equipment and methods for removing mortar from the substrate. T Bright background: '-generally by sequentially depositing a conductor, semiconductor or insulating layer: a product can be formed on the substrate Bulk circuit. After each layer is deposited: Reed can be etched to create circuit characteristics. One manufacturing step involves metal vias: plugs and wires (formed to provide conductive paths between thin film circuits. The formation of gold vias can be borrowed A metal layer is deposited on a patterned insulating layer, and then the metal layer is flattened until the insulating layer is exposed. A part of the metal layer between the rising pattern of the d_,-° layer can form a metal via. , 'Road. One of the acceptable planarization methods is the printed chemical mechanical polishing method (CMP) printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Tobacco and Line Economy. This planarization method typically requires the substrate to be mounted on a stage or Grinding = up The exposed surface outside the substrate is leaned on a rotating polishing pad. The polishing pad can be a standard pad or a fixed polishing pad. A standard pad has a wear-resistant rough surface, and a solid polishing pad has abrasive particles held in a shielding medium. The carrier provides a controlled load, that is, pressure on the substrate to press it against the polishing pad.-Contains at least one chemical reagent and abrasive particles (if the standard pad is used) or deionized water (if used) When the polishing pad is fixed, the slurry is supplied to the surface of the polishing pad. An effective CMP treatment is not only provided-high polishing rate, it also provides a light system (no small shape roughness) and flat (no large shape extension) Pak) substrate surface. Page 4 The paper size is applicable to Chinese National Standards (CNS) A4 specifications (2 × 297 mm) A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Page 5 5. Description of the invention (for use Some of CMP's manufacturing processes include the use of two or more slurries to grind substrates, especially in metal polishing, shallow trench insulation, and other damascene processes. No harm. ~ Grinding pulp can be more acidic. Grinding pulp can be acidic. Mortar can contain colloid particles that are not @ # 1 j in composition or size. Alternatively, these mortars can have different concentrations < additives such as antioxidants or Resist. If one research Trichomonas its fairy cat makeup λ 'and sunda slurry are mixed, the chemical composition of the second slurry will change, and the CMP treatment will be stained with a ± your king dill. ¾: I ca n’t rely on it. For example, I can do it with an acid on the first grinding mill. 彳 4 Listen to the order and write an initial grinding step 4 > '_0_You can use __ iA on the second grinding roll. „J, * .. The alkaline polishing slurry is used for the second polishing step on the soil. When the substrate is transferred from the first polishing heat to the second polishing pad, the slurry will adhere to the substrate or the carrier. When the first acid slurry is mixed with the second alkaline slurry, the ρΗ value of the second slurry is changed. Changing the chemical ρΗ value of the second slurry will reduce the milling rate and output and reduce the process yield. One method of cleaning the substrate is to spray water on the lower side of the substrate when the substrate is transferred between the first and second polishing pads. Unfortunately, this water spray method does not remove all the slurry on the substrate. I. Purpose and sincerity: In one aspect, the present invention relates to a chemical mechanical polishing apparatus. The device has a first rotating platform to support the first polishing pad; a second rotating platform to support the second polishing pad; a movable member of the bearing head can move along a path between the first and second platforms; And, a cleaning station located on the path between the first and second platforms. The cleaning station may include a cleaning cup; a brush part, at least a part of which is located in the cleaning cup, and when the bearing head is a paper sheet, the size of the paper is applicable to China National Standard (CNS) A4 (210 X 29 " 7 mm) ) (Please read the notes on the back before filling in this tile)
五、 經濟部智慧財產局員工消費合作社印製 第6頁 發明説明（ 於清洗站上時，其光γ 、，了疋位以接觸被保持於承載頭上之其 板；及一位於清洗杯内 ...t 基 基板。 彳内H㈣嘴係可導引清洗液至 本發明之實施包括下列。—諸如去離 源，可連接至嗜嘴μ ，主， 、β洗液 。化洗杯具有一大致為長形及一實γ 垂直於該路徑之主轴。刷部可以包含一幾成圓柱 ： 之ί體:刷部之旋轉軸可以和清洗杯主軸幾二 3 /、可以與基板表面垂直。刷部可以 烯醇所形成之短刷毛，$ θ 士从 、可由氷乙 、 』毛或疋由絨毛性多孔聚合物材料作成 之表面。一' 〜 了從轉刷部的位置可與第一刷部幾乎平 丁可提供化學溶液給刷部之散佈器，例如一防蝕 一 pH值中和劑。 4 .、 '' 、面本發明係關於研磨一基板之方法。於該' 中 基板係於第一研磨站中以第一研磨研漿作化學 機械研磨’並於承裁頭上被傳送至—清洗站，並將其定位 在可和旋轉刷接觸的位置上。將一清洗液導至基板上。基 板係於承載頭上被傳送至第二研磨站，並以第二研漿於第 二研磨站作化學機械研磨。 於另—方面’本發明係關於研磨一基板之另—方面。 於邊方法中’ 一基板係被加載至,化學機械研磨設備中，該 S又備具有第―、第二及第三站，每一站具有一旋轉平台。 基板係被以第一研漿於第一研磨站，以第一研磨墊加以化 學機械研磨。基板係於第二站，以一清洗液及一第二研磨 塾加以清洗，該第二研磨墊係較第一研磨墊柔軟。然後， 本紙張尺Μ财_^5^( CNS Μ4規格_(17〇__:<297公黎） (請先閱讀背面之注意事項再填寫本頁}Fifth, printed by the Intellectual Property Bureau employee consumer cooperative of the Ministry of Economic Affairs on page 6 of the invention description (when it is on the cleaning station, its light γ, and its position to contact its plate held on the carrier head; and one is located in the cleaning cup. ..t base substrate. The internal H㈣ nozzle system can guide the cleaning solution to the implementation of the present invention including the following.-Such as removing the source, can be connected to the mouth, μ, main, β cleaning solution. The cleaning cup has an approximate It is elongated and a solid γ perpendicular to the main axis of the path. The brush part can include a cylinder: The body: the rotation axis of the brush part can be about 3/3 with the main axis of the cleaning cup, and can be perpendicular to the substrate surface. The brush part The short bristles that can be formed by enolate can be made from the surface of $ θ, from Bing Yi, 』hair or 疋 from a porous porous polymer material. A ~ ~ from the position of the rotating brush can be almost the same as the first brush Pingding can provide a chemical solution to the spreader of the brush portion, such as an anti-corrosion and pH neutralizer. 4. The invention relates to a method for polishing a substrate. In the substrate, the substrate is first polished. The first grinding slurry is used in the station for chemical mechanical grinding ' It is transferred from the cutting head to the cleaning station, and it is positioned at a position that can be contacted with the rotating brush. A cleaning liquid is guided to the substrate. The substrate is transferred to the second polishing station on the carrier head, and The second slurry was chemically and mechanically polished at the second polishing station. In another aspect, the invention relates to another aspect of polishing a substrate. In the side method, a substrate system is loaded into a chemical mechanical polishing equipment, the S It also has first, second, and third stations, each of which has a rotating platform. The substrate is first ground at the first polishing station, and the first polishing pad is chemical mechanically polished. The substrate is at the second Station, cleaning with a cleaning solution and a second polishing pad, the second polishing pad is softer than the first polishing pad. Then, this paper rule M CHO__5 ^ (CNS Μ4 specifications _ (17〇__: < 297 公 黎) (Please read the notes on the back before filling out this page}
A7 ____—____B7 五、發明説明（） 基板被以一第一研漿及第三研磨塾於第三站中加以化學 機械研磨。 (請先閲讀背面之注意事項再填寫本頁) 於另一方面中’本發明係關於化學機械研磨設備。該 設備具有第一旋轉平台，以支持第一研磨墊；一第二旋轉 平台’用以支持一第二研磨墊；一承載頭，可沿著於第— 及第二平台間之路徑移動；及—清洗站，位於第一及第二 平台間之路杈上。該清洗站包含一清洗杯；一機械刷洗 器’該刷洗器係被定位在當承載頭進入清洗站時可接觸承 載頭上之基板；及一噴嘴，其係位於清洗杯中，且被設計 成可導引清洗液至基板上。 本發明之優點可以包含以下。基板係於研磨站間被有 效地清洗。且在没有研漿混合之顧慮下，可於單一製程中 於CMP設備中使用多種研漿。因此，cmp設備可以用於 各種具咼輸出量、高處理良率之多研漿研磨操作中。 本發明之其他特性及優點將可由以下之說明.變得更 明顯’說明包含圖式及申請專利範圍。 圖式簡單說明： 經濟部智慧財產局員工消費合作社印製 第1圖為一化學機械研磨設備之分解立體圖。 第2圖為依據本發明之CMP、設備之上視寧。 第3 A圖為第1圖之CMP設備之清洗站剖面圖。 第3B圖為一示意圖，其中基板及承載頭係位於第3A圖之 清洗站上。 第4圖為第3 A圖之清洗站之示意剖面圖，沿著清洗杯之 __________第 7育__ 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） A7 B7 五、發明説明（） 主軸，其同時例示出清洗液源。 第5圖為依據本發明之CMP設備之另一實施例之俯視 圖。 第6A圖為由第5圖之CMP設備之第一研磨站看來之研磨 整之剖面圖。 第6B圖為由5圖之CMP設備之第二研磨站看來之研磨墊 之剖面圖。 第7圖為一清洗站另一實施例之剖面圖。 圖號對照說明： (讀先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 10 基板 20 研磨設備 22 下力口工基板 23 桌面 25 研磨站 27 傳送站 30 旋轉平台 32 研磨整 40 墊調整設備 42 旋轉臂 44 獨立旋轉調整頭 46 清洗基座 50 研漿 52 研漿/清洗臂 60 轉盤 62 中心柱 64 轉盤軸 66 轉盤支持板 68 蓋部 70 載頭系統 72 徑向槽 80 載頭 100 清洗杯 1 02 唇密封 104 長側 106 短側 110 清洗室 1 12 洗滌刷 第8頁 本纸張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） A7 B7 五、發明説明（） 120 喷 嘴 管 122 喷 嘴 124 清 洗 液 126 排 水 128 清 洗 液 130 點 滴 噴放器 150 研 磨 墊 152 粗 造 面 154 上 層 156 下 層 160 研 磨 墊 162 平 滑 面 1 64 柔 軟 層 168 黏 著 層 170 平 爲 刷 (請先閲讀背面之注意事項再填寫本頁) 發明詳細說明： 參考第1圖，一或多數基板10將藉由化學機械研磨 設備2 0研磨。研磨設備2 0之說明可以於美國專利申請號 第08/549,3 36號中找到，其係於1 995年10月27日由Ilya Perlov等人提出申請且命名為”用於化學機械研磨之徑向 振盪轉盤處理系統”，並受讓給本案之受讓人，其整個揭 示係併入作為參考。研磨設備20包含一低加工基座22， 其具有一桌面.23，安裝於其上及一可移除式外蓋（未示 出）。桌面2 3支持一序列之研磨站，包含第一研磨站2 5 a、 一第二研磨站2 5 b及最終研磨站2 5 c及一傳送站2 7。傳送 站27形,成一大致為方形的配'置，具有四研磨站25a、25b 及25c。傳送站27具多種功能，包括接收來自一加載設備 (未示出）之個別基板1 0，清洗基板，加載基板至承載頭， 由承載頭接收基板，清洗基板，及最後，傳送基板回到加 載設備。 第9頁 本紙張尺度適用中國國家標準（CNS ) Α·4規格（210X297公釐） 、一\\° 經濟部智慧財產局員工消費合作社印製 A7 ---_____Β7 五、發明説明（) ~~ 每一研磨站包含一可旋轉平台30,其上放置有一研磨 墊32。若基板10為，，8吋，，（2〇〇毫米）或，，12吋，，（3〇〇毫米） 直控碟狀’則平台及研磨墊直徑將分別為2 〇吋或3 〇叶。 每一平台30可以是一可旋轉的鋁板或不鏽鋼板，連接至 平台驅動馬達（未示出）。對於多數處理而言，平台驅動 馬達係以約每分鐘3〇至2〇〇轉來旋轉平台3〇，但也可使 用較低或較高轉速。 每一研磨站2 5 a - 2 5 c更包含一相關墊調整設備4 0。每 塾滴整設備40具有一旋轉臂42’可固持一獨立旋轉調 正頭44及一相關清洗基座46。墊調整設備4〇係用來保持 研磨塾之狀態’使能有效地研磨基板。 可旋轉多頭轉盤60係位於上述低加工基座22之上 方轉盤60係由一中心柱62所支撐，並由一位於加工基 板22内之轉盤馬達組件驅動繞著一轉軸64旋轉。中心柱 62支持一轉盤支持板66及一蓋部68。轉盤60包含四個 承載頭系統70a、70b、70c及70d »承載頭系統中的三個 承載頭可接收並失持基板，並藉由將其壓向研磨站25a- 1 τ c平台上之研磨塾而研磨它們。承載頭系統之一河接收 一基板並傳送一基板至傳送站27。 四承載頭系統70a-70d係以轉盤軸64之等角間距被 女裝於轉盤支持板66之上。中心柱62允許轉盤馬遠旋轉 轉盤支持板66，並沿著轉盤中心軸64繞行承載頭系統 7〇a_7〇d及附著於其上之基板。 每—承載頭系統70a-70d包含一載具或載頭8〇。一載 第10頁 (CNS ) A4規格（210X 297公釐） 11---·--,----- (請先閲讀背面之注意事項再填寫本頁} 訂 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中^ 五、發明説明（ A7 B7 經濟部智慧財產局員工消費合作社印製 具驅動軸74連接一載頭旋轉馬達76(藉去除絮 之一來顯示）至載頭80，使得每一載頭8〇可以2 <四分 其軸心旋轉。每一載頭具有一載具驅動軸及馬達二地繞著 每一載頭80個別地橫向振盪於形成於轉’’’、。另外’ 尺符板66 Φ 士 k向槽72中。'骨動件（未示出）支持每—驅動軸於立 徑向槽中。-徑向驅動馬達(未示出)可以移動滑動件，、 橫向振盪該載頭。 & 載頭80執行幾項機械功能。一般而言，载頭支持基 板靠向研磨墊，將向下壓力平均分配於基板背面，、由驅: 軸傳送轉矩至基板，並確保基板不會在研磨操作時由載頭 下滑出。 載頭8 0可以包含彈性薄膜（未示出），其提供基板接收 面。合適之載頭80之說明可以於美國專利申請案號第 0 8/745，679號中找到，該案由史帝芬.朗尼加等人所申請 於1 996年11月8日命名為：，，用於化學機械研磨系統之 具彈性薄膜之載頭”’該案受讓給本發明之受讓人，其揭 示是併入本案作為參考。 參考第2圖’藉由組合研漿/清洗臂5 2 a將一第一研 t 5 0a供給至研磨站25a之研磨墊上，一第二研漿50b係 藉由研漿/清洗臂5.2b被供給、至研磨站2 5b之研磨塾上，及 一第三研漿5 0 c係藉由研漿/清洗臂5 2 c被供給至研磨站 2 5 c之研磨墊。每一研磨/清洗臂可以包含二或多數研漿供 給管’以提供研漿至相關研磨墊表面。提供足夠之研漿給 蓋邵並濕濶每一研磨墊。每一研漿/清洗臂同時包含幾個喷 第11貫 本纸張尺度適用中國國家標準（CNS )八4規格（2似297公廬 (請先閲讀背面之注意事項再填寫本頁) ---衣. --ITIn m I n A7 B7 五、發明説明（） ~~~ — 嘴（未示出），其可高壓清洗每一研磨及調整循環未端之研 磨塾。 第一研漿50a可以包含去離子水、研磨顆粒（例如， 石英或鋁土，用以銅研磨）、一酸成份及一氧化劑；而第 二研漿5Ob可以包含去離子水、研磨顆粒（例如石英或鋁 土）及一鹼成份。第三研漿適於作最終研磨或拋光，例如 其可以是純去離子水’有或無研磨顆粒。 四個中間清洗站55a、55b、55c及5 5d可以被定位於 相鄰研磨站25a、25b及25c及傳送站27之間。清洗站可 在基板由一研磨站通過至另一研磨站時來清洗基板，以便 由該基板上去除研漿並防止三種研漿之污染及混合。 參考第2、3A、3B及4圖’諸如清洗站551)之每—中 間清洗站包含了一長清洗杯1 00，該杯具有兩長側丨〇4， 兩短侧1 0 6 ’及位於清洗杯上表面1 〇 8之一彈性唇密封 1 〇 2。長側1 0 4定義為清洗杯之主軸（如由虚線丨丨8所示）， 該杯係徑向對齊該轉盤之中心軸，即當轉盤轉動使其位於 清洗杯上方時，該主軸係與載頭活動方向大致垂直。載頭 8 0可以於清洗站5 5 b上方.移動，亦可降低其位置以接觸辰 密封1 02。清洗杯亦可垂直移動。於此例子中，當基板位 於清洗站上方時，清洗杯可以上升，以接觸基板。或者， 基板可以被載頭水平移動於清洗站上方。當清洗杯之中心 與基板中心對齊時，清洗杯1 0 0之兩長側1 0 4可以長到橫 跨基板。當基板接觸唇密封102時，密封於清洗杯1〇〇内 之容積即形成一清洗室110(見第3A圖）。 第12頁 本紙張尺度適用中國國家襟準（CNS ) A4規格（210 X 297公釐） ---^---,-----衣-- (請先聞讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 A7 _____B7__ 五、發明説明（） 兩可旋轉圓柱洗滌刷1 1 2a及U 2b係被懸掛於清洗杯 1 00中。洗滌刷1 1 2a及1 1 2b之主軸係大致與清洗杯之主 軸平行。同時洗滌刷之旋轉軸1 1 6也係大致與清洗杯之主 軸平行。洗滌刷之外表面1 1 4係稍突出於唇密封1 〇2外。 因此，當基板1 0下降與清洗杯1 00接觸時，洗條刷Γ1 2a 及112b可與基板下側及載頭之扣環（見第3B圖）作緊密接 觸。可用一馬達（未示出）於箭頭A之方向旋轉洗滌刷1丨2 a 及1 1 2b，該方向係與基板於第一及第二研磨站間行進之方 向相反。此可確保來自清洗站之過度噴灑會被反向導引至 原研磨站’即基板被送往之研磨站。洗滌刷可於於相同方 向以相同速度旋轉。每一刷部均具有由聚乙烯醇（pVA)所 構成之刷毛。洗條刷1 1 2 a及1 1 2 b之表面1 1 4可以同時由 諸如保麗德（Politex)類的絨毛多孔聚合物合成材料來形 成。可以由實驗來決定諸如刷毛長度、韌度之類的最佳刷 部特性。 一具有若干垂直導向噴嘴1 22之噴嘴管1 2〇可位於洗 >條刷1 1 2a及1 1 2b之間。噴嘴也可位於刷組件側邊並可以 —定角度向内朝啟始平台對準。喷嘴管係連接至清洗液 128源。當基板1〇位於清洗杯1〇〇上時，—諸如去離子水 之清洗液124因受壓而通過噴嘴，該噴嘴方向係已被調整 成朝基板及載頭下側噴灑。唇密封提供一阻障層，以防止 清洗液由清洗杯逸散。過量清洗液及來自基板之研聚及洗 條刷1 1 2a及1 1 2b刷下之基板刷出物，會落入清洗杯i 〇〇 底邵並由廢棄物排出口 1 2 6排出。 _____________ 第 13貢 本紙張尺度適用中國國家標準（CNS ) A4規格（210>< 297公^ ^ ------ (請先閱讀背面之注意事項再填寫本頁)A7 ____—____ B7 V. Description of the invention () The substrate is chemically and mechanically polished in a third station with a first slurry and a third polishing. (Please read the notes on the back before filling out this page) In another aspect, the present invention relates to chemical mechanical polishing equipment. The device has a first rotating platform to support a first polishing pad; a second rotating platform 'to support a second polishing pad; a carrier head that can move along a path between the first and second platforms; and —Washing station, located on the fork between the first and second platforms. The cleaning station includes a cleaning cup; a mechanical scrubber, which is positioned on a substrate that can contact the carrier head when the carrier head enters the cleaning station; and a nozzle that is located in the cleaning cup and is designed to Guide the cleaning solution onto the substrate. The advantages of the present invention may include the following. The substrate is efficiently cleaned between polishing stations. And without the concerns of slurry mixing, multiple slurry can be used in CMP equipment in a single process. Therefore, cmp equipment can be used in various slurry grinding operations with high output and high processing yield. Other features and advantages of the present invention will become apparent from the following description. The description includes drawings and patent application scope. Brief description of the drawing: Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Figure 1 is an exploded perspective view of a chemical mechanical grinding equipment. Fig. 2 shows the CMP on the equipment according to the present invention. Figure 3A is a sectional view of the cleaning station of the CMP equipment of Figure 1. Fig. 3B is a schematic diagram in which the substrate and the carrier head are located on the cleaning station of Fig. 3A. Figure 4 is a schematic cross-sectional view of the cleaning station in Figure 3 A, along the __________ 7th Yu__ of this cleaning cup This paper size applies to China National Standard (CNS) A4 specifications (210X 297 mm) A7 B7 5 2. Description of the invention () The main shaft simultaneously exemplifies the cleaning liquid source. Fig. 5 is a plan view of another embodiment of a CMP apparatus according to the present invention. FIG. 6A is a cross-sectional view of the polishing process seen from the first polishing station of the CMP apparatus of FIG. 5. FIG. Fig. 6B is a sectional view of the polishing pad as seen from the second polishing station of the CMP apparatus of Fig. 5. Figure 7 is a sectional view of another embodiment of a cleaning station. Comparative description of drawing numbers: (Read the precautions on the back before you fill in this page) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperatives 10 Printed on the substrate 20 Grinding equipment 22 Substrate substrate 23 Tabletop 25 Grinding station 27 Transfer station 30 Rotating platform 32 Grinding and finishing 40 Pad adjustment equipment 42 Rotating arm 44 Independent rotating adjusting head 46 Cleaning base 50 Grinding slurry 52 Grinding / washing arm 60 Turntable 62 Center post 64 Turntable shaft 66 Turntable support plate 68 Cover 70 Carrier system 72 Radial Slot 80 Carrier head 100 Cleaning cup 1 02 Lip seal 104 Long side 106 Short side 110 Washing room 1 12 Washing brush Page 8 This paper applies Chinese National Standard (CNS) A4 (210X297 mm) A7 B7 V. Invention Description (120) Nozzle tube 122 Nozzle 124 Cleaning liquid 126 Drain 128 Cleaning liquid 130 Drop ejector 150 Grinding pad 152 Rough surface 154 Upper layer 156 Lower layer 160 Polishing pad 162 Smooth surface 1 64 Soft layer 168 Adhesive layer 170 Flat brush (Please read the notes on the back before filling out this page) Detailed description of the invention: Refer to Figure 1, one or most of the basic 10 by the CMP polishing apparatus 20. A description of the grinding equipment 20 can be found in U.S. Patent Application No. 08 / 549,3 36, which was filed on October 27, 1995 by Ilya Perlov et al. And named "for chemical mechanical grinding Radial Oscillation Turntable Processing System "and assigned to the assignee of this case, the entire disclosure of which is incorporated as a reference. The grinding apparatus 20 includes a low-machining base 22 having a table top 23 mounted thereon and a removable cover (not shown). The tabletop 2 3 supports a series of grinding stations, including a first grinding station 25a, a second grinding station 25b, a final grinding station 25c, and a transfer station 27. The transfer station 27 is shaped into a substantially square configuration and has four grinding stations 25a, 25b, and 25c. The transfer station 27 has a variety of functions, including receiving individual substrates 10 from a loading device (not shown), cleaning the substrate, loading the substrate to a carrier head, receiving the substrate by the carrier head, cleaning the substrate, and finally, transferring the substrate back to loading device. Page 9 This paper size applies the Chinese National Standard (CNS) Α · 4 specification (210X297 mm), printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 ---_____ Β7 V. Description of the invention () ~~ Each polishing station includes a rotatable platform 30 on which a polishing pad 32 is placed. If the substrate 10 is, 8 inches, (200 mm) or, 12 inches, (300 mm) directly controlled dish-shaped, then the diameter of the platform and the polishing pad will be 20 inches or 30 inches, respectively. . Each platform 30 may be a rotatable aluminum or stainless steel plate connected to a platform drive motor (not shown). For most processes, the platform drive motor rotates the platform 30 at about 30 to 200 revolutions per minute, but lower or higher speeds can also be used. Each of the grinding stations 2 5 a-2 5 c further includes an associated pad adjustment device 40. Each sizing device 40 has a rotating arm 42 'which can hold an independent rotating adjustment head 44 and an associated cleaning base 46. The pad adjusting device 40 is used to maintain the state of the polishing pad ′ to enable efficient polishing of the substrate. The rotatable multi-head turntable 60 is located on the above-mentioned low processing base 22. The square turntable 60 is supported by a center post 62 and is driven to rotate about a rotation shaft 64 by a turntable motor assembly located in the processing substrate 22. The center pillar 62 supports a turntable support plate 66 and a cover portion 68. The turntable 60 includes four carrier head systems 70a, 70b, 70c, and 70d. The three carrier heads in the carrier head system can receive and lose the substrate and grind it by pressing it on the polishing station 25a-1 τc platform. Grind and grind them. One of the carrier head systems receives a substrate and transfers the substrate to a transfer station 27. The four carrier head systems 70a-70d are placed on the turntable support plate 66 at equal angular intervals by the turntable shaft 64. The center column 62 allows the turntable to be rotated far away from the turntable support plate 66, and detours the carrier head system 70a-70d and the substrate attached thereto along the turntable center axis 64. Each of the carrier head systems 70a-70d includes a carrier or carrier 80. One page, page 10 (CNS) A4 specification (210X 297 mm) 11 -------, ----- (Please read the precautions on the back before filling out this page} Orders for consumption by the Intellectual Property Bureau of the Ministry of Economic Affairs Cooperative printed paper standards are applicable ^ V. Description of the invention (A7 B7 The consumer ’s cooperative printing machine driving shaft 74 of the Ministry of Economic Affairs ’Intellectual Property Bureau is connected with a carrier rotation motor 76 (shown by removing one of the bats) to the carrier 80 So that each carrier 80 can rotate 2 < quarter of its axis. Each carrier has a carrier drive shaft and a motor, and each of them oscillates laterally around each carrier 80 and is formed in the rotation '' ',. In addition' Ruler plate 66 Φ in the k-direction groove 72. 'Bone mover (not shown) supports each-the drive shaft is in a vertical radial groove.-The radial drive motor (not shown) can move The slider oscillates the carrier laterally. &Amp; The carrier 80 performs several mechanical functions. In general, the carrier supports the substrate against the polishing pad and distributes the downward pressure evenly on the back of the substrate. Torque to the substrate and ensure that the substrate does not slide out of the carrier during the grinding operation. The carrier 80 can Contains an elastic film (not shown) that provides a substrate receiving surface. A description of a suitable carrier 80 can be found in U.S. Patent Application No. 0 8 / 745,679, which was filed by Stephen Roniga et al. The application was named on November 8, 1996: ", a carrier with an elastic film for a chemical mechanical polishing system" "This case was assigned to the assignee of the present invention, and its disclosure is incorporated into this case for reference. Referring to FIG. 2 ', a first grinding t 5 0a is supplied to the polishing pad of the grinding station 25a by combining the grinding / washing arm 5 2 a, and a second grinding 50b is passed through the grinding / washing arm 5.2b. It is supplied to the grinding pad of the grinding station 2 5b, and a third slurry 50 c is supplied to the polishing pad of the grinding station 2 5 c by the grinding / washing arm 5 2 c. Each grinding / washing arm May include two or more slurry supply tubes' to provide slurry to the surface of the relevant polishing pad. Provide enough slurry to cover and wet each polishing pad. Each slurry / washing arm contains several sprays at the same time. The paper size applies to Chinese National Standard (CNS) 8-4 specifications (2 like 297 liters (please read the note on the back first) Please fill in this page for more information) --- clothing. --ITIn m I n A7 B7 V. Description of the invention () ~~~ — Mouth (not shown), which can clean each grinding at high pressure and adjust the grinding at the end of the cycle塾. The first slurry 50a may include deionized water, abrasive particles (for example, quartz or alumina for copper grinding), an acid component, and an oxidant; and the second slurry 5Ob may include deionized water and abrasive particles. (Such as quartz or alumina) and an alkali component. The third slurry is suitable for final grinding or polishing, for example, it can be pure deionized water with or without abrasive particles. The four intermediate cleaning stations 55a, 55b, 55c, and 55d can be positioned between the adjacent grinding stations 25a, 25b, and 25c and the transfer station 27. The cleaning station can clean the substrate when the substrate passes from one polishing station to another polishing station, so as to remove the slurry from the substrate and prevent contamination and mixing of the three types of slurry. Refer to Figures 2, 3A, 3B, and 4 'such as each of the cleaning stations 551)-the intermediate cleaning station contains a long cleaning cup 100, which has two long sides 〇〇4, two short sides 1 06', and One of the elastic lip seals 102 on the upper surface of the cleaning cup 108. The long side 1 0 4 is defined as the main axis of the cleaning cup (as shown by the dashed line 丨 丨 8). The cup is radially aligned with the central axis of the turntable, that is, when the turntable is rotated so that it is above the cleaning cup, the main axis is It is approximately perpendicular to the moving direction of the carrier. The carrier 80 can be moved above the cleaning station 5 5 b. It can also be lowered to contact the seal 102. The cleaning cup can also be moved vertically. In this example, when the substrate is above the cleaning station, the cleaning cup can be raised to contact the substrate. Alternatively, the substrate may be moved horizontally above the cleaning station by the carrier. When the center of the cleaning cup is aligned with the center of the substrate, the two long sides 104 of the cleaning cup 100 can grow to cross the substrate. When the substrate contacts the lip seal 102, the volume sealed in the cleaning cup 100 forms a cleaning chamber 110 (see FIG. 3A). Page 12 This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm) --- ^ ---, ----- clothing-(Please read the precautions on the back before filling (This page) Order Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, printed by the Consumer Cooperative of the Ministry of Economic Affairs, printed by the Consumers ’Cooperative of the Ministry of Economic Affairs, printed by A7 _____B7__ 5. Description of the invention 1 00. The main axes of the washing brushes 1 12a and 1 1b are substantially parallel to the main axis of the cleaning cup. At the same time, the rotation axis 1 1 6 of the washing brush is also substantially parallel to the main axis of the cleaning cup. The outer surface 1 1 4 of the washing brush slightly protrudes beyond the lip seal 10 2. Therefore, when the substrate 10 is lowered and comes into contact with the cleaning cup 100, the strip cleaning brushes Γ1 2a and 112b can make close contact with the underside of the substrate and the retaining ring of the carrier (see FIG. 3B). A motor (not shown) can be used to rotate the washing brushes 1 2a and 1 1 2b in the direction of arrow A, which is opposite to the direction in which the substrate travels between the first and second polishing stations. This can ensure that the excessive spray from the cleaning station will be guided back to the original polishing station ', that is, the polishing station to which the substrate is sent. The scrubbing brush can be rotated in the same direction and at the same speed. Each brush has bristles made of polyvinyl alcohol (pVA). The surface 1 1 4 of the strip cleaning brushes 1 1 a and 1 2 b may be formed of a composite material of a fluff porous polymer such as Politex at the same time. The best brush characteristics such as bristle length and toughness can be determined experimentally. A nozzle tube 120 having a plurality of vertically guided nozzles 122 may be located between the washing brushes 1 12a and 1 12b. The nozzle can also be located on the side of the brush assembly and can be aligned at an angle inward toward the starting platform. The nozzle tubing is connected to a source of cleaning fluid 128. When the substrate 10 is located on the cleaning cup 100, a cleaning solution 124 such as deionized water passes through the nozzle due to pressure, and the nozzle direction has been adjusted to spray toward the substrate and the underside of the carrier. The lip seal provides a barrier to prevent the cleaning fluid from escaping from the cleaning cup. Excessive cleaning liquid and the substrate brushes from the substrate research and cleaning brushes 1 12a and 1 12b will fall into the bottom of the cleaning cup i 00 and be discharged from the waste discharge port 1 2 6. _____________ The 13th tribute This paper size applies the Chinese National Standard (CNS) A4 specification (210 > < 297 public ^ ^ ------ (Please read the precautions on the back before filling this page)
經濟部智慧財產局員工消費合作社印製 第u頁 A7 B7 五、發明説明（） 兩個點滴喷放器1 3Oa及1 3Ob係位於清洗杯1 00中並 分別延長伸出於洗滌刷1 1 2a及1 1 2b之上，以放出化學物 至洗滌刷上。點滴喷放器1 30a及1 3Ob可提供能中和先前 研磨站研漿之流體。例如，若研磨站2 5 a使用一酸研漿， 則點滴喷放器1 30a及1 3Ob可噴放鹼溶液至洗滌刷上。然 後驗溶液可中和來自研磨站25a之研槳中，原本附著於基 板下側之酸成分。另外’也可將一諸如苯基疊氮類的防蝕 劑’以點滴噴放器1 30a及1 3Ob噴放至洗滌刷上。 於操作中’一旦完成研磨站2 5 a之研磨步驟，則載頭 8 0會停止旋轉，基板被由平台及研磨墊提起，然後載頭徑 向對準清洗站5 5b。然後，旋轉轉盤60將載頭及基板移至 清洗站5 5b上’載頭降低基板1 0，使其與唇密封丨〇2間有 低壓接觸。然後’當洗滌刷U2a及丨12b由基板下侧及載 頭扣環下側去除研漿時，載頭會轉動基板。直到整個基板 面已經被洗滌刷清洗芫畢，基板才會停止旋轉。然後，載 頭將基板提離開唇密封，轉盤會旋轉將基板對準在下一研 磨站25b上。 於另-實施例中，如於第7圖所示，可於清洗杯1〇〇 中懸掛許多扁平刷170。平扁刷大致為碟片型，當基板1〇 ，降低至與清洗杯⑽接觸時、平扁刷⑺之上表面會與基 板接觸。平爲刷可以被—馬達（未示出）繞著旋轉袖⑺旋 轉’該軸係與基板表面垂 — 吗爱直，以機械性地清洗基板表面。 每一平扁刷170之上*而！〜 面174可以由諸如保麗德（p〇Htex) 類的絨毛多孔聚合物合成材料來構成。 本紙張尺度適用中國國家標準（CNS ) (請先閡讀背面之注意事項再填寫本頁)Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs on page A7 B7 V. Description of the invention () The two drip sprayers 1 3Oa and 1 3Ob are located in the cleaning cup 100 and extend to extend over the washing brush 1 1 2a And 1 1 2b to release chemicals onto the scrub brush. The drip ejectors 130a and 130b can provide fluids that can neutralize the slurry in the previous grinding station. For example, if the grinding station 25a uses an acid slurry, the drip sprayers 130a and 13Ob can spray the alkaline solution onto the washing brush. The test solution can then neutralize the acid component originally attached to the underside of the substrate in the grinding paddle from the grinding station 25a. Alternatively, 'an anti-corrosive agent such as phenyl azide may be sprayed onto the scrubbing brushes by drip sprayers 130a and 13Ob. In operation ', once the polishing step of the polishing station 2 5 a is completed, the carrier head 80 stops rotating, the substrate is lifted by the platform and the polishing pad, and the carrier head is aligned with the cleaning station 5 5b in the radial direction. Then, the turntable 60 is rotated to move the carrier head and the substrate to the cleaning station 5 5b. The carrier head lowers the substrate 10 so that there is a low-pressure contact between the substrate and the lip seal. Then, when the washing brushes U2a and 12b are removed from the underside of the substrate and the underside of the carrier buckle, the carrier rotates the substrate. The substrate will not stop rotating until the entire substrate surface has been cleaned by a scrub brush. Then, the carrier lifts the substrate off the lip seal, and the turntable rotates to align the substrate on the next grinding station 25b. In another embodiment, as shown in FIG. 7, a plurality of flat brushes 170 may be suspended in the cleaning cup 100. The flat flat brush is generally a disc type. When the substrate 10 is lowered to contact the cleaning cup ⑽, the upper surface of the flat flat brush ⑺ will contact the substrate. The flat brush can be rotated by a motor (not shown) around a rotating sleeve. The shaft system is perpendicular to the surface of the substrate. It is straight to mechanically clean the surface of the substrate. Above each flat flat brush 170 and above! ~ The surface 174 may be composed of a fluffy porous polymer synthetic material such as POHtex. This paper size applies to Chinese National Standards (CNS) (Please read the precautions on the back before filling this page)
A7 _— B7 五、發明説明（） 於另一實施例中’ CMP設備20,中的一個研磨站可以 被田成 洗站來使用，以便去除基板上的研漿。明白地 來說了參考弟5圖，第一及第三研磨站25a，及25c，可以 包括一相當硬的研磨墊150，而第二研磨站25b，可包括一 相當軟的研磨墊i 6〇。參考第6 A圖，於第一及第三研磨 站25a及25c’中，平台可以支持一研磨墊15〇，該墊具有 粗表面152、一上層以4及一下層156。下層156可以藉 由壓力感應黏著層158附著至平台30。上層154可以較下 層1 56為硬。例如，上層丨54可以由微多孔聚氨基甲酸乙 酯或混合了填充物之聚氨基甲酸乙酯做成，而下層丨56可 以由浸以氨基曱酸乙酯之壓縮感應纖維製成。一兩層研磨 墊，上層係由IC_1〇〇〇或IC_14〇〇作成’下層由suba_4 作成’其可由得拉瓦州’紐瓦市之羅德公司購得（IC_ 1 ， 1C-1400及SUBA-4為羅德公司之產品名）。 於第二研磨站25b’中，平台可以支持一具有大致平滑 面162之研磨墊16〇及單軟層ι64。層164.係以壓力感應 式附著層168附著至平台13〇上。層164可以由絨毛多孔 聚合物合成材料製成。一合適軟研磨墊是購自羅德公司， 商名為保麗德（p〇Htex)。研磨塾1 6〇可以内兹或壓印以 圖案’，以改良基板表面之研磨分佈。研磨站25b，也可以 和研磨站25a，及25c，相同。 參考第5圖’基板1〇是以一購自伊利諾州阿洛拉市、 威布公司（Cabot Cor.p·，Aurora, Illinois)之 SSW-2000 之第 一金屬研漿及硬粗糙研磨墊1 50 ’首先於研磨站25a，中進 ____ 第15頁 本纸張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ~ -- —-J---,--j----- (請先閱讀背面之注意事項再填寫本頁) 訂A7 _— B7 V. Description of the invention () In another embodiment, one of the polishing stations in the CMP equipment 20, can be used by the Tiancheng washing station to remove the slurry on the substrate. With reference to Figure 5 clearly, the first and third polishing stations 25a and 25c may include a relatively hard polishing pad 150, and the second polishing station 25b may include a relatively soft polishing pad i6. . Referring to Fig. 6A, in the first and third polishing stations 25a and 25c ', the platform can support a polishing pad 150, which has a rough surface 152, an upper layer 4 and a lower layer 156. The lower layer 156 may be attached to the platform 30 by a pressure-sensitive adhesive layer 158. The upper layer 154 may be harder than the lower layer 156. For example, the upper layer 54 may be made of microporous polyurethane or polyurethane mixed with a filler, and the lower layer 56 may be made of a compressed induction fiber impregnated with urethane. One or two layers of polishing pads. The upper layer is made of IC_1OO or IC_14OO. The lower layer is made of suba_4. It can be purchased from Rhodes, Newark, Delaware (IC_1, 1C-1400 and SUBA- 4 is the product name of Rhodes). In the second polishing station 25b ', the platform can support a polishing pad 16 with a substantially smooth surface 162 and a single soft layer ι64. The layer 164. is attached to the platform 130 with a pressure-sensitive adhesive layer 168. The layer 164 may be made of a fluffy porous polymer synthetic material. A suitable soft abrasive pad is commercially available from Rhodes Corporation under the trade name POHtex. Grinding 塾 160 can be patterned 'or embossed to improve the polishing distribution of the substrate surface. The polishing station 25b may be the same as the polishing stations 25a and 25c. Referring to FIG. 5, the substrate 10 is a first metal slurry and hard rough polishing pad of SSW-2000 purchased from Cabot Cor.p., Aurora, Illinois, Alora, Illinois. 1 50 'First at the grinding station 25a, Zhongjin ____ page 15 This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) ~---- J ---, --j --- -(Please read the notes on the back before filling this page)
A 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明（) 行研磨。接下來，將基板移至第二研磨站2 5 b ’，以去離子 水及軟研磨墊1 6 0進行絨面處理約2 0至3 0秒。此絨面處 理可去除聚積於基板及載頭下側之研漿。最後，基板係以 購自凱布公司（Cabot Corp)之SS 12之第二金屬或氧化物研 漿進行最終研磨。第二站之清洗可以由中間清洗站以外的 清洗站來執行，或再加上中間清洗站來進行清洗。因此， CMP設備20’毋需包含中間清洗站55a-55d。 所例示及說明之洗滌刷及平扁刷係例示用，也可使用 其他機械清洗裝置。例如，一刷可以不以旋轉方式，而以 振動或軌道來運轉；一刷部可以是不具有刷毛的多孔體； 或者，一刷可以具有矩形剖面。 本發明並不限定於所描繪及說明之實施例。相反地， 本發明之範圍係由附屬之申請專利範圍所定義。 第16頁 本纸張尺度適用t國國家標準（CNS ) A4規格（210X 297公釐） (請先閱讀背面之注意事項再填寫本頁)A Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 5. Description of the invention () Grinding. Next, the substrate is moved to a second polishing station 2 5 b ′, and sueded with deionized water and a soft polishing pad 160 for about 20 to 30 seconds. This suede treatment can remove the grout accumulated on the substrate and the underside of the carrier. Finally, the substrate was final polished with a second metal or oxide slurry of SS 12 purchased from Cabot Corp. The cleaning of the second station can be performed by a cleaning station other than the intermediate cleaning station, or by adding an intermediate cleaning station for cleaning. Therefore, the CMP equipment 20 'need not include intermediate cleaning stations 55a-55d. The scrubbing brushes and flat brushes exemplified and explained are for illustrative purposes, and other mechanical cleaning devices can also be used. For example, a brush may be operated in a vibration or orbit instead of rotating; a brush portion may be a porous body without bristles; or a brush may have a rectangular cross section. The invention is not limited to the depicted and described embodiments. Instead, the scope of the invention is defined by the scope of the attached patent application. Page 16 The paper size is applicable to the national standard (CNS) A4 specification (210X 297 mm) (Please read the precautions on the back before filling this page)