KR100724023B1 - 반도체장치의 제조방법 - Google Patents
반도체장치의 제조방법 Download PDFInfo
- Publication number
- KR100724023B1 KR100724023B1 KR1020050084557A KR20050084557A KR100724023B1 KR 100724023 B1 KR100724023 B1 KR 100724023B1 KR 1020050084557 A KR1020050084557 A KR 1020050084557A KR 20050084557 A KR20050084557 A KR 20050084557A KR 100724023 B1 KR100724023 B1 KR 100724023B1
- Authority
- KR
- South Korea
- Prior art keywords
- polishing
- copper
- film
- acid
- metal
- Prior art date
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- 238000005498 polishing Methods 0.000 claims abstract description 297
- 229910052751 metal Inorganic materials 0.000 claims abstract description 90
- 239000002184 metal Substances 0.000 claims abstract description 90
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- 238000005260 corrosion Methods 0.000 claims abstract description 28
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
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- Mechanical Engineering (AREA)
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- General Chemical & Material Sciences (AREA)
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- Chemical Kinetics & Catalysis (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
Claims (34)
- 기판상에 형성된 요철을 갖는 금속막을 연마하여 평탄화하는 반도체장치의 연마방법으로서,상기 금속막의 요철부분을 산화성물질에 의해 산화시켜 금속산화물을 형성하고,상기 금속산화막을 상기 금속막의 pH-산화환원 전위도에서 pH 및 산화환원 전위가 상기 금속막의 부식영역에 있는 수용화물질에 의해 수용화하여 상기 금속산화막을 용출함으로써 상기 금속막을 연마하고,그 연마에 있어서 상기 금속산화물의 볼록부분을 연마포(硏磨布)의 기계적 연마에 의해 국소적으로 가열함으로써 상기 수용화의 반응을 촉진하여, 상기 볼록부분의 금속산화막의 연마속도를 오목부분의 금속산화막의 연마속도 보다 크게 하여,상기 요철을 갖는 금속막을 평탄화하는 것을 특징으로 하는 반도체장치의 제조방법.
- 제1항에 있어서,상기 금속막은, 구리 또는 구리를 주성분으로 하는 금속 또는 구리화합물을 포함하는 것을 특징으로 하는 반도체장치의 제조방법.
- 삭제
- 삭제
- 삭제
- 제1항에 있어서,상기 산화성물질은, 과산화수소를 포함하는 물질인 것을 특징으로 하는 반도체장치의 제조방법.
- 제1항에 있어서,상기 수용화물질은 산 또는 그 염을 포함하는 물질인 것을 특징으로 하는 반도체장치의 제조방법.
- 제7항에 있어서,상기 산은 유기산을 포함하는 것을 특징으로 하는 반도체장치의 제조방법.
- 제8항에 있어서,상기 유기산은 구연산, 젖산, 주석산, 프탈산, 초산(酢酸) 중 어느 하나를 포함하는 것을 특징으로 하는 반도체장치의 제조방법.
- 제1항에 있어서,상기 수용화물질은 암모늄화합물을 포함하는 물질인 것을 특징으로 하는 반도체장치의 제조방법.
- 제10항에 있어서,상기 암모늄화합물은 수산화암모늄인 것을 특징으로 하는 반도체장치의 제조방법.
- 삭제
- 제1항에 있어서,상기 제1 금속층은 구리 또는 구리를 주성분으로 하는 금속 또는 구리화합물을 포함하고, 상기 제2 금속층은 티탄 또는 티탄합금 또는 티탄화합물을 포함하는 것을 특징으로 하는 반도체장치의 제조방법.
- 기판상에 형성된 요철을 갖는 구리막을 연마하여 평탄화하는 반도체장치의 제조방법으로서,상기 구리막의 요철부분을 산화성물질에 의해 산화시켜 구리산화물을 형성하고,상기 구리산화막을 상기 구리막의 pH-산화환원 전위도에서 pH 및 산화환원 전위가 상기 구리막의 부식영역에 있는 수용화물질에 의해 수용화하여 상기 구리산화막을 용출함으로써 상기 구리막을 연마하고,그 연마에 있어서 상기 구리산화물의 볼록 부분을 연마포의 기계적 연마에 의해 국소적으로 가열함으로써 상기 수용화의 반응을 촉진하여, 상기 볼록 부분의 구리산화막의 연마속도를 오목부분의 구리산화막의 연마속도 보다 크게 하여,상기 요철을 갖는 구리막을 평탄화하는 것을 특징으로 하는 반도체장치의 제조방법.
- 삭제
- 삭제
- 삭제
- 제14항에 있어서,상기 구리막의 산화성물질이 과산화수소를 포함하는 물질인 것을 특징으로 하는 반도체장치의 제조방법.
- 제14항에 있어서,상기 구리산화막의 수용화물질은 산 또는 그 염을 포함하는 물질에 의해 이루어지는 것을 특징으로 하는 반도체장치의 제조방법.
- 제19항에 있어서,상기 염은 유기산을 포함하는 것을 특징으로 하는 반도체장치의 제조방법.
- 제20항에 있어서,상기 유기산은 구연산, 젖산, 주석산, 프탈산, 초산(酢酸) 중 어느 하나를 포함하는 것을 특징으로 하는 반도체장치의 제조방법.
- 제14항에 있어서,상기 구리산화막의 수용화물질은 암모늄화합물을 포함하는 물질에 의해서 이루어지는 것을 특징으로 하는 반도체장치의 제조방법.
- 제22항에 있어서,상기 암모늄화합물은 수산화암모늄인 것을 특징으로 하는 반도체장치의 제조방법.
- 기판상에 형성된 절연막상에 트랜치를 형성하고, 상기 트랜치 내 및 상기 절연막 상에 제1 금속막과 제2 금속막을 형성하고,기판상에 형성된 요철을 갖는 상기 제2 금속막을 연마하여 평탄화하는 반도체장치의 제조방법에 있어서,상기 제2 금속막의 요철부분을 산화성물질에 의해 산화시켜 금속산화물을 형성하고, 상기 제2 금속산화막을 상기 제2 금속막의 pH-산화환원 전위도에서 pH 및 산화환원 전위가 상기 제2 금속막의 부식영역에 있는 수용화물질에 의해 수용화하 여 상기 제2 금속산화막을 용출시킴으로써 상기 제2 금속막을 연마하고,그 연마에 있어서 상기 제2 금속산화물의 볼록부분을 연마포의 기계적 연마에 의해 국소적으로 가열함으로써 상기 수용화의 반응을 촉진하여, 상기 볼록부분의 제2 금속산화막의 연마속도를 오목부분의 제2 금속산화막의 연마속도 보다 크게하여,상기 요철을 갖는 제2 금속막을 평탄화하는 것을 특징으로 하는 반도체장치의 제조방법.
- 삭제
- 삭제
- 삭제
- 제24항에 있어서,상기 산화성물질은 과산화수소를 포함하는 물질인 것을 특징으로 하는 반도체장치의 제조방법.
- 제24항에 있어서,상기 수용화물질은 산 또는 그 염을 포함하는 것을 특징으로 하는 반도체장치의 제조방법.
- 제29항에 있어서,상기 산은 유기산을 포함하는 것을 특징으로 하는 반도체장치의 제조방법.
- 제30항에 있어서,상기 유기산은 구연산, 젖산, 주석산, 프탈산, 초산(酢酸) 중 어느 하나를 포함하는 것을 특징으로 하는 반도체장치의 제조방법.
- 제24항에 있어서,상기 수용화물질은 암모늄화합물을 포함하는 것을 특징으로 하는 반도체장치의 제조방법.
- 제32항에 있어서,상기 암모늄화합물은 수산화암모늄인 것을 특징으로 하는 반도체장치의 제조방법.
- 제24항에 있어서,상기 제2 금속막은 구리 또는 구리를 주성분으로 하는 금속 또는 구리화합물을 포함하고, 상기 제1 금속막은 티탄 또는 티탄합금 또는 티탄산화합물을 포함하는 것을 특징으로 하는 반도체장치의 제조방법.
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EP (2) | EP1760127A2 (ko) |
JP (1) | JP3371775B2 (ko) |
KR (2) | KR100624589B1 (ko) |
CN (2) | CN1298508C (ko) |
DE (1) | DE69836612T2 (ko) |
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KR101693278B1 (ko) * | 2015-09-25 | 2017-01-05 | 유비머트리얼즈주식회사 | 슬러리 및 이를 이용한 기판 연마 방법 |
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CN110509114B (zh) * | 2019-08-14 | 2021-01-05 | 大连理工大学 | 一种钨合金的研磨抛光方法 |
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CN112067643A (zh) * | 2020-09-08 | 2020-12-11 | 宁波江丰电子材料股份有限公司 | 一种高纯铝靶材组件焊接扩散层sem检测的制样方法 |
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US20070029285A1 (en) | 2007-02-08 |
US6596638B1 (en) | 2003-07-22 |
TW380083B (en) | 2000-01-21 |
EP1760127A2 (en) | 2007-03-07 |
DE69836612D1 (de) | 2007-01-25 |
JP3371775B2 (ja) | 2003-01-27 |
EP0913442A2 (en) | 1999-05-06 |
CN1974129A (zh) | 2007-06-06 |
DE69836612T2 (de) | 2007-10-25 |
US7563716B2 (en) | 2009-07-21 |
KR100624589B1 (ko) | 2006-11-30 |
US20070167015A1 (en) | 2007-07-19 |
KR20050101128A (ko) | 2005-10-20 |
US6117775A (en) | 2000-09-12 |
KR19990037374A (ko) | 1999-05-25 |
US7279425B2 (en) | 2007-10-09 |
EP0913442A3 (en) | 2002-03-06 |
EP0913442B1 (en) | 2006-12-13 |
CN1216727A (zh) | 1999-05-19 |
JPH11135466A (ja) | 1999-05-21 |
CN1298508C (zh) | 2007-02-07 |
US20050074967A1 (en) | 2005-04-07 |
SG95588A1 (en) | 2003-04-23 |
US7132367B2 (en) | 2006-11-07 |
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