KR102250010B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR102250010B1
KR102250010B1 KR1020157006119A KR20157006119A KR102250010B1 KR 102250010 B1 KR102250010 B1 KR 102250010B1 KR 1020157006119 A KR1020157006119 A KR 1020157006119A KR 20157006119 A KR20157006119 A KR 20157006119A KR 102250010 B1 KR102250010 B1 KR 102250010B1
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film
insulating film
oxide semiconductor
oxide
semiconductor film
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Korean (ko)
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KR20150053917A (ko
Inventor
슌페이 야마자키
šœ페이 야마자키
히로유키 미야케
히데아키 시시도
준 고야마
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Priority to KR1020217013406A priority Critical patent/KR102331652B1/ko
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    • H01L29/7869—
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H01L27/1255—
    • H01L29/78606—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13069—Thin film transistor [TFT]

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Vehicle Body Suspensions (AREA)
  • Diaphragms For Electromechanical Transducers (AREA)
  • Measuring Pulse, Heart Rate, Blood Pressure Or Blood Flow (AREA)
KR1020157006119A 2012-09-13 2013-09-02 반도체 장치 Active KR102250010B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020217013406A KR102331652B1 (ko) 2012-09-13 2013-09-02 표시 장치

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2012-202125 2012-09-13
JP2012202125 2012-09-13
JP2013053988 2013-03-15
JPJP-P-2013-053988 2013-03-15
PCT/JP2013/074167 WO2014042102A1 (en) 2012-09-13 2013-09-02 Semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020217013406A Division KR102331652B1 (ko) 2012-09-13 2013-09-02 표시 장치

Publications (2)

Publication Number Publication Date
KR20150053917A KR20150053917A (ko) 2015-05-19
KR102250010B1 true KR102250010B1 (ko) 2021-05-11

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KR1020157006119A Active KR102250010B1 (ko) 2012-09-13 2013-09-02 반도체 장치
KR1020247039999A Active KR102781550B1 (ko) 2012-09-13 2013-09-02 표시 장치
KR1020227016583A Active KR102484987B1 (ko) 2012-09-13 2013-09-02 표시 장치
KR1020237000047A Active KR102679509B1 (ko) 2012-09-13 2013-09-02 반도체 장치
KR1020237044131A Active KR102738883B1 (ko) 2012-09-13 2013-09-02 표시 장치
KR1020217013406A Active KR102331652B1 (ko) 2012-09-13 2013-09-02 표시 장치
KR1020217038173A Active KR102400509B1 (ko) 2012-09-13 2013-09-02 표시 장치
KR1020237043118A Active KR102691397B1 (ko) 2012-09-13 2013-09-02 표시 장치

Family Applications After (7)

Application Number Title Priority Date Filing Date
KR1020247039999A Active KR102781550B1 (ko) 2012-09-13 2013-09-02 표시 장치
KR1020227016583A Active KR102484987B1 (ko) 2012-09-13 2013-09-02 표시 장치
KR1020237000047A Active KR102679509B1 (ko) 2012-09-13 2013-09-02 반도체 장치
KR1020237044131A Active KR102738883B1 (ko) 2012-09-13 2013-09-02 표시 장치
KR1020217013406A Active KR102331652B1 (ko) 2012-09-13 2013-09-02 표시 장치
KR1020217038173A Active KR102400509B1 (ko) 2012-09-13 2013-09-02 표시 장치
KR1020237043118A Active KR102691397B1 (ko) 2012-09-13 2013-09-02 표시 장치

Country Status (6)

Country Link
US (7) US9455280B2 (enExample)
JP (11) JP6077971B2 (enExample)
KR (8) KR102250010B1 (enExample)
CN (2) CN111477634B (enExample)
TW (6) TWI882425B (enExample)
WO (1) WO2014042102A1 (enExample)

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KR20150040873A (ko) 2012-08-03 2015-04-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
DE102013216824B4 (de) 2012-08-28 2024-10-17 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
TWI575663B (zh) 2012-08-31 2017-03-21 半導體能源研究所股份有限公司 半導體裝置
CN111477634B (zh) 2012-09-13 2023-11-14 株式会社半导体能源研究所 半导体装置
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KR20250054132A (ko) 2012-12-25 2025-04-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8981374B2 (en) 2013-01-30 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
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KR102244553B1 (ko) 2013-08-23 2021-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 용량 소자 및 반도체 장치
TWI749810B (zh) 2013-08-28 2021-12-11 日商半導體能源研究所股份有限公司 顯示裝置
KR102247678B1 (ko) 2013-09-13 2021-04-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
JP2015179247A (ja) 2013-10-22 2015-10-08 株式会社半導体エネルギー研究所 表示装置
CN105659370A (zh) 2013-10-22 2016-06-08 株式会社半导体能源研究所 显示装置
JP6303544B2 (ja) * 2014-01-29 2018-04-04 東洋紡株式会社 液晶表示装置及び偏光板
WO2015132694A1 (en) 2014-03-07 2015-09-11 Semiconductor Energy Laboratory Co., Ltd. Touch sensor, touch panel, and manufacturing method of touch panel
TWI657488B (zh) * 2014-03-20 2019-04-21 日商半導體能源研究所股份有限公司 半導體裝置、具有該半導體裝置的顯示裝置、具有該顯示裝置的顯示模組以及具有該半導體裝置、該顯示裝置和該顯示模組的電子裝置
JP6653315B2 (ja) 2014-08-01 2020-02-26 オーソゴナル，インコーポレイテッド 有機電子デバイスのフォトリソグラフィック・パターニング
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JP2017526177A (ja) 2014-08-01 2017-09-07 オーソゴナル，インコーポレイテッド 素子のフォトリソグラフパターン化方法
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WO2016199680A1 (ja) * 2015-06-08 2016-12-15 シャープ株式会社 半導体装置およびその製造方法
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KR102367245B1 (ko) * 2015-07-21 2022-02-25 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
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JP6850096B2 (ja) 2015-09-24 2021-03-31 株式会社半導体エネルギー研究所 半導体装置の作製方法及び電子機器の作製方法
US9852926B2 (en) * 2015-10-20 2017-12-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for semiconductor device
JP6832624B2 (ja) * 2015-12-22 2021-02-24 三菱電機株式会社 液晶表示装置およびその製造方法
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JP2019101243A (ja) * 2017-12-04 2019-06-24 三菱電機株式会社 液晶表示パネルおよびその製造方法
WO2019131409A1 (ja) * 2017-12-28 2019-07-04 株式会社ジャパンディスプレイ 基板及び電気泳動装置
JP7363094B2 (ja) 2019-05-22 2023-10-18 セイコーエプソン株式会社 記録装置
JP7608159B2 (ja) * 2020-12-29 2025-01-06 京セラ株式会社 ３次元表示装置および画像表示システム
KR102799142B1 (ko) * 2021-06-10 2025-04-21 엘지디스플레이 주식회사 박막 트랜지스터 기판 및 표시장치
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