KR101607035B1 - 노광 장치 및 디바이스 제조 방법 - Google Patents
노광 장치 및 디바이스 제조 방법 Download PDFInfo
- Publication number
- KR101607035B1 KR101607035B1 KR1020147008125A KR20147008125A KR101607035B1 KR 101607035 B1 KR101607035 B1 KR 101607035B1 KR 1020147008125 A KR1020147008125 A KR 1020147008125A KR 20147008125 A KR20147008125 A KR 20147008125A KR 101607035 B1 KR101607035 B1 KR 101607035B1
- Authority
- KR
- South Korea
- Prior art keywords
- nozzle member
- liquid
- substrate
- optical system
- recovery
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B27/00—Photographic printing apparatus
- G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
- G03B27/42—Projection printing apparatus, e.g. enlarger, copying camera for automatic sequential copying of the same original
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70758—Drive means, e.g. actuators, motors for long- or short-stroke modules or fine or coarse driving
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Microscoopes, Condenser (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Length Measuring Devices By Optical Means (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2004-089348 | 2004-03-25 | ||
| JP2004089348 | 2004-03-25 | ||
| PCT/JP2005/005254 WO2005093791A1 (ja) | 2004-03-25 | 2005-03-23 | 露光装置及びデバイス製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020127025345A Division KR101441777B1 (ko) | 2004-03-25 | 2005-03-23 | 노광 장치 및 디바이스 제조 방법 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020147032263A Division KR101707294B1 (ko) | 2004-03-25 | 2005-03-23 | 노광 장치 및 디바이스 제조 방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20140053386A KR20140053386A (ko) | 2014-05-07 |
| KR101607035B1 true KR101607035B1 (ko) | 2016-04-11 |
Family
ID=35056454
Family Applications (8)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020177003483A Expired - Fee Related KR101851511B1 (ko) | 2004-03-25 | 2005-03-23 | 노광 장치 및 디바이스 제조 방법 |
| KR1020137015943A Expired - Fee Related KR101504445B1 (ko) | 2004-03-25 | 2005-03-23 | 노광 장치 및 디바이스 제조 방법 |
| KR1020127025345A Expired - Fee Related KR101441777B1 (ko) | 2004-03-25 | 2005-03-23 | 노광 장치 및 디바이스 제조 방법 |
| KR1020067016062A Expired - Fee Related KR101253355B1 (ko) | 2004-03-25 | 2005-03-23 | 노광 장치 및 디바이스 제조 방법 |
| KR1020187010650A Ceased KR20180042456A (ko) | 2004-03-25 | 2005-03-23 | 노광 장치 및 디바이스 제조 방법 |
| KR1020147008125A Expired - Fee Related KR101607035B1 (ko) | 2004-03-25 | 2005-03-23 | 노광 장치 및 디바이스 제조 방법 |
| KR1020147032263A Expired - Fee Related KR101707294B1 (ko) | 2004-03-25 | 2005-03-23 | 노광 장치 및 디바이스 제조 방법 |
| KR1020117025951A Expired - Fee Related KR101250155B1 (ko) | 2004-03-25 | 2005-03-23 | 노광 장치 및 디바이스 제조 방법 |
Family Applications Before (5)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020177003483A Expired - Fee Related KR101851511B1 (ko) | 2004-03-25 | 2005-03-23 | 노광 장치 및 디바이스 제조 방법 |
| KR1020137015943A Expired - Fee Related KR101504445B1 (ko) | 2004-03-25 | 2005-03-23 | 노광 장치 및 디바이스 제조 방법 |
| KR1020127025345A Expired - Fee Related KR101441777B1 (ko) | 2004-03-25 | 2005-03-23 | 노광 장치 및 디바이스 제조 방법 |
| KR1020067016062A Expired - Fee Related KR101253355B1 (ko) | 2004-03-25 | 2005-03-23 | 노광 장치 및 디바이스 제조 방법 |
| KR1020187010650A Ceased KR20180042456A (ko) | 2004-03-25 | 2005-03-23 | 노광 장치 및 디바이스 제조 방법 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020147032263A Expired - Fee Related KR101707294B1 (ko) | 2004-03-25 | 2005-03-23 | 노광 장치 및 디바이스 제조 방법 |
| KR1020117025951A Expired - Fee Related KR101250155B1 (ko) | 2004-03-25 | 2005-03-23 | 노광 장치 및 디바이스 제조 방법 |
Country Status (5)
| Country | Link |
|---|---|
| US (7) | US8111373B2 (enExample) |
| JP (13) | JP4525676B2 (enExample) |
| KR (8) | KR101851511B1 (enExample) |
| TW (7) | TWI402893B (enExample) |
| WO (1) | WO2005093791A1 (enExample) |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ATE467902T1 (de) | 2004-01-05 | 2010-05-15 | Nikon Corp | Belichtungsvorrichtung, belichtungsverfahren und bauelementeherstellungsverfahren |
| JP4525676B2 (ja) | 2004-03-25 | 2010-08-18 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
| US7486381B2 (en) * | 2004-05-21 | 2009-02-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4623095B2 (ja) * | 2004-06-17 | 2011-02-02 | 株式会社ニコン | 液浸リソグラフィレンズの流体圧力補正 |
| JP4565272B2 (ja) | 2004-07-01 | 2010-10-20 | 株式会社ニコン | 液浸リソグラフィのための動的流体制御システム |
| TWI506674B (zh) | 2004-09-17 | 2015-11-01 | 尼康股份有限公司 | Exposure apparatus, exposure method, and device manufacturing method |
| US7180571B2 (en) | 2004-12-08 | 2007-02-20 | Asml Netherlands B.V. | Lithographic projection apparatus and actuator |
| WO2006118258A1 (ja) * | 2005-04-28 | 2006-11-09 | Nikon Corporation | 露光方法及び露光装置、並びにデバイス製造方法 |
| JP2007012954A (ja) * | 2005-07-01 | 2007-01-18 | Canon Inc | 露光装置 |
| US7411658B2 (en) * | 2005-10-06 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7804577B2 (en) | 2005-11-16 | 2010-09-28 | Asml Netherlands B.V. | Lithographic apparatus |
| JP4514225B2 (ja) * | 2005-11-16 | 2010-07-28 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| US7864292B2 (en) | 2005-11-16 | 2011-01-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP3327759A1 (en) * | 2005-12-08 | 2018-05-30 | Nikon Corporation | Substrate holding apparatus, exposure apparatus, exposing method, and device fabricating method |
| US7701551B2 (en) | 2006-04-14 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| DE102006023876A1 (de) * | 2006-05-19 | 2007-11-22 | Carl Zeiss Smt Ag | Optische Abbildungseinrichtung |
| US8027023B2 (en) | 2006-05-19 | 2011-09-27 | Carl Zeiss Smt Gmbh | Optical imaging device and method for reducing dynamic fluctuations in pressure difference |
| US7656502B2 (en) * | 2006-06-22 | 2010-02-02 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US20080198348A1 (en) * | 2007-02-20 | 2008-08-21 | Nikon Corporation | Apparatus and methods for minimizing force variation from immersion liquid in lithography systems |
| SG10201502625RA (en) * | 2007-07-18 | 2015-05-28 | Nikon Corp | Measuring Method, Stage Apparatus, And Exposure Apparatus |
| NL1035908A1 (nl) | 2007-09-25 | 2009-03-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
| KR101408783B1 (ko) | 2007-12-07 | 2014-06-17 | 삼성전자주식회사 | 반도체 소자의 제조장치 및 이를 이용한 반도체 소자의제조방법 |
| US8233139B2 (en) * | 2008-03-27 | 2012-07-31 | Nikon Corporation | Immersion system, exposure apparatus, exposing method, and device fabricating method |
| NL2003392A (en) | 2008-09-17 | 2010-03-18 | Asml Netherlands Bv | Lithographic apparatus and a method of operating the apparatus. |
| US9494870B2 (en) * | 2012-10-12 | 2016-11-15 | Nikon Corporation | Exposure apparatus, exposing method, device manufacturing method, program, and recording medium |
| JP6466333B2 (ja) * | 2012-10-15 | 2019-02-06 | エーエスエムエル ネザーランズ ビー.ブイ. | 作動機構、光学装置、リソグラフィ装置及びデバイス製造方法 |
| JP6119242B2 (ja) * | 2012-12-27 | 2017-04-26 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
| JPWO2015147039A1 (ja) * | 2014-03-26 | 2017-04-13 | 株式会社ニコン | 移動体装置、露光装置、フラットパネルディスプレイの製造方法、及びデバイス製造方法 |
| US10802260B2 (en) | 2014-05-29 | 2020-10-13 | Rarecyte, Inc. | Automated substrate loading |
| US10890748B2 (en) | 2014-05-29 | 2021-01-12 | Rarecyte, Inc. | Automated substrate loading |
| US11422352B2 (en) | 2014-05-29 | 2022-08-23 | Rarecyte, Inc. | Automated substrate loading |
| US9857580B2 (en) | 2014-05-29 | 2018-01-02 | Rarecyte, Inc. | Apparatus for holding a substrate within a secondary device |
| US11300769B2 (en) | 2014-05-29 | 2022-04-12 | Rarecyte, Inc. | Automated substrate loading |
| RU2759334C2 (ru) | 2016-09-21 | 2021-11-12 | Нексткьюр, Инк. | Антитела против siglec-15 и способы их применения |
| JP6506785B2 (ja) * | 2017-02-02 | 2019-04-24 | 株式会社Kokusai Electric | リソグラフィ用テンプレートの製造方法、プログラム及び基板処理装置 |
| JP7088028B2 (ja) | 2017-02-08 | 2022-06-21 | 昭和電工マテリアルズ株式会社 | 電荷輸送性材料及びその利用 |
| US12222487B2 (en) | 2019-03-01 | 2025-02-11 | Rarecyte, Inc. | Holding a substrate within a secondary device |
| CN112684665B (zh) * | 2020-12-25 | 2024-06-25 | 浙江启尔机电技术有限公司 | 一种浸液供给回收装置 |
| KR102584513B1 (ko) | 2020-12-31 | 2023-10-06 | 세메스 주식회사 | 온도 변화가 수반되는 분위기에 제공되는 기판 지지 부재의 수평 측정용 기판형 센서, 이를 이용한 수평 측정 방법 및 비일시적 컴퓨터 판독가능 매체 |
| CN114690577B (zh) * | 2020-12-31 | 2024-10-25 | 上海微电子装备(集团)股份有限公司 | 一种管路柔性适应装置及浸没式光刻机 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999049504A1 (fr) | 1998-03-26 | 1999-09-30 | Nikon Corporation | Procede et systeme d'exposition par projection |
| JP2001190996A (ja) | 2000-01-11 | 2001-07-17 | Matsushita Electric Ind Co Ltd | プリント配線板の製造装置およびそれを用いたプリント配線板の製造方法 |
Family Cites Families (221)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1242527A (en) * | 1967-10-20 | 1971-08-11 | Kodak Ltd | Optical instruments |
| US4346164A (en) | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
| US4509852A (en) | 1980-10-06 | 1985-04-09 | Werner Tabarelli | Apparatus for the photolithographic manufacture of integrated circuit elements |
| JPS57153433A (en) | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
| JPS58202448A (ja) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | 露光装置 |
| JPS5919912A (ja) | 1982-07-26 | 1984-02-01 | Hitachi Ltd | 液浸距離保持装置 |
| US4441808A (en) | 1982-11-15 | 1984-04-10 | Tre Semiconductor Equipment Corp. | Focusing device for photo-exposure system |
| DD221563A1 (de) | 1983-09-14 | 1985-04-24 | Mikroelektronik Zt Forsch Tech | Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur |
| DD224448A1 (de) | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | Einrichtung zur fotolithografischen strukturuebertragung |
| JPS6265326A (ja) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | 露光装置 |
| JPS63157419A (ja) | 1986-12-22 | 1988-06-30 | Toshiba Corp | 微細パタ−ン転写装置 |
| US4837443A (en) | 1987-10-15 | 1989-06-06 | The Perkin-Elmer Corporation | Guard ring for a differentially pumped seal apparatus |
| JPH04305917A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
| JPH04305915A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
| JPH0562877A (ja) | 1991-09-02 | 1993-03-12 | Yasuko Shinohara | 光によるlsi製造縮小投影露光装置の光学系 |
| JP3246615B2 (ja) | 1992-07-27 | 2002-01-15 | 株式会社ニコン | 照明光学装置、露光装置、及び露光方法 |
| JPH06188169A (ja) | 1992-08-24 | 1994-07-08 | Canon Inc | 結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法 |
| JPH06124873A (ja) * | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
| JP2753930B2 (ja) * | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
| JP3747958B2 (ja) | 1995-04-07 | 2006-02-22 | 株式会社ニコン | 反射屈折光学系 |
| JP3308063B2 (ja) * | 1993-09-21 | 2002-07-29 | 株式会社ニコン | 投影露光方法及び装置 |
| JP3212199B2 (ja) | 1993-10-04 | 2001-09-25 | 旭硝子株式会社 | 平板型陰極線管 |
| JPH07220990A (ja) | 1994-01-28 | 1995-08-18 | Hitachi Ltd | パターン形成方法及びその露光装置 |
| US5528118A (en) | 1994-04-01 | 1996-06-18 | Nikon Precision, Inc. | Guideless stage with isolated reaction stage |
| US5874820A (en) | 1995-04-04 | 1999-02-23 | Nikon Corporation | Window frame-guided stage mechanism |
| US5623853A (en) | 1994-10-19 | 1997-04-29 | Nikon Precision Inc. | Precision motion stage with single guide beam and follower stage |
| JPH08136475A (ja) | 1994-11-14 | 1996-05-31 | Kawasaki Steel Corp | 板状材の表面観察装置 |
| JPH08171054A (ja) | 1994-12-16 | 1996-07-02 | Nikon Corp | 反射屈折光学系 |
| JPH08316124A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
| JPH08316125A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
| US5707535A (en) | 1996-01-11 | 1998-01-13 | Harris; Ronald B. | Vacuum loadable divided phase separator for liquid/solid separation |
| JPH103039A (ja) | 1996-06-14 | 1998-01-06 | Nikon Corp | 反射屈折光学系 |
| JPH1020195A (ja) | 1996-06-28 | 1998-01-23 | Nikon Corp | 反射屈折光学系 |
| JP3227595B2 (ja) | 1996-08-20 | 2001-11-12 | 東京エレクトロン株式会社 | 現像処理方法及び現像処理装置 |
| US6104687A (en) | 1996-08-26 | 2000-08-15 | Digital Papyrus Corporation | Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction |
| US5825043A (en) | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
| JP4029183B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 投影露光装置及び投影露光方法 |
| JP4029182B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 露光方法 |
| CN1244018C (zh) | 1996-11-28 | 2006-03-01 | 株式会社尼康 | 曝光方法和曝光装置 |
| JP3728613B2 (ja) | 1996-12-06 | 2005-12-21 | 株式会社ニコン | 走査型露光装置の調整方法及び該方法を使用する走査型露光装置 |
| DE69717975T2 (de) | 1996-12-24 | 2003-05-28 | Asml Netherlands B.V., Veldhoven | In zwei richtungen ausgewogenes positioniergerät, sowie lithographisches gerät mit einem solchen positioniergerät |
| US6262796B1 (en) | 1997-03-10 | 2001-07-17 | Asm Lithography B.V. | Positioning device having two object holders |
| JPH10255319A (ja) | 1997-03-12 | 1998-09-25 | Hitachi Maxell Ltd | 原盤露光装置及び方法 |
| AU6853598A (en) * | 1997-04-18 | 1998-11-13 | Nikon Corporation | Aligner, exposure method using the aligner, and method of manufacture of circuitdevice |
| JP3747566B2 (ja) | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
| JP3817836B2 (ja) | 1997-06-10 | 2006-09-06 | 株式会社ニコン | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
| US5900354A (en) * | 1997-07-03 | 1999-05-04 | Batchelder; John Samuel | Method for optical inspection and lithography |
| US20010003028A1 (en) | 1997-09-19 | 2001-06-07 | Nikon Corporation | Scanning Exposure Method |
| JP4210871B2 (ja) | 1997-10-31 | 2009-01-21 | 株式会社ニコン | 露光装置 |
| JPH11176727A (ja) * | 1997-12-11 | 1999-07-02 | Nikon Corp | 投影露光装置 |
| JPH11260791A (ja) | 1998-03-10 | 1999-09-24 | Toshiba Mach Co Ltd | 半導体ウエハの乾燥方法および乾燥装置 |
| US5997963A (en) | 1998-05-05 | 1999-12-07 | Ultratech Stepper, Inc. | Microchamber |
| JP2000058436A (ja) | 1998-08-11 | 2000-02-25 | Nikon Corp | 投影露光装置及び露光方法 |
| JP2000076707A (ja) | 1998-08-31 | 2000-03-14 | Sony Corp | 光学記録媒体作製用原盤記録装置 |
| EP1143492A4 (en) | 1998-09-03 | 2004-06-02 | Nikon Corp | EXPOSURE APPARATUS AND METHOD, DEVICE AND METHOD FOR PRODUCING SAID APPARATUS |
| EP1052552A3 (en) | 1999-04-19 | 2003-03-12 | ASML Netherlands B.V. | Gas bearings for use with vacuum chambers and their application in lithographic projection apparatus |
| JP3653198B2 (ja) | 1999-07-16 | 2005-05-25 | アルプス電気株式会社 | 乾燥用ノズルおよびこれを用いた乾燥装置ならびに洗浄装置 |
| JP2001118773A (ja) | 1999-10-18 | 2001-04-27 | Nikon Corp | ステージ装置及び露光装置 |
| WO2001035168A1 (en) | 1999-11-10 | 2001-05-17 | Massachusetts Institute Of Technology | Interference lithography utilizing phase-locked scanning beams |
| TWI264617B (en) | 1999-12-21 | 2006-10-21 | Asml Netherlands Bv | Balanced positioning system for use in lithographic apparatus |
| US6995930B2 (en) | 1999-12-29 | 2006-02-07 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
| US7187503B2 (en) | 1999-12-29 | 2007-03-06 | Carl Zeiss Smt Ag | Refractive projection objective for immersion lithography |
| TW579664B (en) | 2000-01-11 | 2004-03-11 | Matsushita Electric Industrial Co Ltd | Apparatus and method for manufacturing printed circuit board |
| US7000622B2 (en) | 2002-09-30 | 2006-02-21 | Lam Research Corporation | Methods and systems for processing a bevel edge of a substrate using a dynamic liquid meniscus |
| US6488040B1 (en) | 2000-06-30 | 2002-12-03 | Lam Research Corporation | Capillary proximity heads for single wafer cleaning and drying |
| TW591653B (en) | 2000-08-08 | 2004-06-11 | Koninkl Philips Electronics Nv | Method of manufacturing an optically scannable information carrier |
| JP2002122999A (ja) | 2000-10-16 | 2002-04-26 | Nikon Corp | 露光方法、露光装置及びマスク |
| JP2002134384A (ja) | 2000-10-20 | 2002-05-10 | Nikon Corp | 露光方法及び装置、並びにデバイス製造方法 |
| KR100866818B1 (ko) | 2000-12-11 | 2008-11-04 | 가부시키가이샤 니콘 | 투영광학계 및 이 투영광학계를 구비한 노광장치 |
| US20020080339A1 (en) | 2000-12-25 | 2002-06-27 | Nikon Corporation | Stage apparatus, vibration control method and exposure apparatus |
| WO2002091078A1 (en) | 2001-05-07 | 2002-11-14 | Massachusetts Institute Of Technology | Methods and apparatus employing an index matching medium |
| TW529172B (en) | 2001-07-24 | 2003-04-21 | Asml Netherlands Bv | Imaging apparatus |
| US7032658B2 (en) | 2002-01-31 | 2006-04-25 | Smart Drilling And Completion, Inc. | High power umbilicals for electric flowline immersion heating of produced hydrocarbons |
| JP2003124180A (ja) | 2001-10-16 | 2003-04-25 | Ebara Corp | 基板処理装置 |
| US7482118B2 (en) * | 2001-11-15 | 2009-01-27 | Third Wave Technologies, Inc. | Endonuclease-substrate complexes |
| US6811613B2 (en) | 2001-11-26 | 2004-11-02 | Tokyo Electron Limited | Coating film forming apparatus |
| US6764386B2 (en) * | 2002-01-11 | 2004-07-20 | Applied Materials, Inc. | Air bearing-sealed micro-processing chamber |
| EP1480765A4 (en) | 2002-02-06 | 2009-10-21 | Akrion Technologies Inc | CAPILLARY DRYING OF SUBSTRATES |
| DE10210899A1 (de) | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
| US7092069B2 (en) | 2002-03-08 | 2006-08-15 | Carl Zeiss Smt Ag | Projection exposure method and projection exposure system |
| DE10229818A1 (de) | 2002-06-28 | 2004-01-15 | Carl Zeiss Smt Ag | Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem |
| TWI249082B (en) | 2002-08-23 | 2006-02-11 | Nikon Corp | Projection optical system and method for photolithography and exposure apparatus and method using same |
| US7367345B1 (en) | 2002-09-30 | 2008-05-06 | Lam Research Corporation | Apparatus and method for providing a confined liquid for immersion lithography |
| US6954993B1 (en) | 2002-09-30 | 2005-10-18 | Lam Research Corporation | Concentric proximity processing head |
| US7093375B2 (en) | 2002-09-30 | 2006-08-22 | Lam Research Corporation | Apparatus and method for utilizing a meniscus in substrate processing |
| US7198055B2 (en) | 2002-09-30 | 2007-04-03 | Lam Research Corporation | Meniscus, vacuum, IPA vapor, drying manifold |
| US6988326B2 (en) | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Phobic barrier meniscus separation and containment |
| US6988327B2 (en) | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Methods and systems for processing a substrate using a dynamic liquid meniscus |
| US7383843B2 (en) | 2002-09-30 | 2008-06-10 | Lam Research Corporation | Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer |
| US7520285B2 (en) | 2002-09-30 | 2009-04-21 | Lam Research Corporation | Apparatus and method for processing a substrate |
| US6788477B2 (en) | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
| DE60335595D1 (de) | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
| CN101424881B (zh) | 2002-11-12 | 2011-11-30 | Asml荷兰有限公司 | 光刻投射装置 |
| KR100588124B1 (ko) | 2002-11-12 | 2006-06-09 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피장치 및 디바이스제조방법 |
| EP1420299B1 (en) | 2002-11-12 | 2011-01-05 | ASML Netherlands B.V. | Immersion lithographic apparatus and device manufacturing method |
| US7110081B2 (en) | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| SG121822A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| EP1420300B1 (en) | 2002-11-12 | 2015-07-29 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| SG121818A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| EP2495613B1 (en) | 2002-11-12 | 2013-07-31 | ASML Netherlands B.V. | Lithographic apparatus |
| DE10253679A1 (de) | 2002-11-18 | 2004-06-03 | Infineon Technologies Ag | Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren |
| SG131766A1 (en) | 2002-11-18 | 2007-05-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| DE10258718A1 (de) | 2002-12-09 | 2004-06-24 | Carl Zeiss Smt Ag | Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives |
| SG158745A1 (en) | 2002-12-10 | 2010-02-26 | Nikon Corp | Exposure apparatus and method for producing device |
| KR101036114B1 (ko) | 2002-12-10 | 2011-05-23 | 가부시키가이샤 니콘 | 노광장치 및 노광방법, 디바이스 제조방법 |
| EP1571697A4 (en) | 2002-12-10 | 2007-07-04 | Nikon Corp | EXPOSURE SYSTEM AND DEVICE PRODUCTION METHOD |
| EP1429190B1 (en) | 2002-12-10 | 2012-05-09 | Canon Kabushiki Kaisha | Exposure apparatus and method |
| DE60326384D1 (de) | 2002-12-13 | 2009-04-09 | Koninkl Philips Electronics Nv | Flüssigkeitsentfernung in einem verfahren und einer einrichtung zum bestrahlen von flecken auf einer schicht |
| ATE335272T1 (de) | 2002-12-19 | 2006-08-15 | Koninkl Philips Electronics Nv | Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts |
| AU2003295177A1 (en) | 2002-12-19 | 2004-07-14 | Koninklijke Philips Electronics N.V. | Method and device for irradiating spots on a layer |
| US7010958B2 (en) | 2002-12-19 | 2006-03-14 | Asml Holding N.V. | High-resolution gas gauge proximity sensor |
| US6781670B2 (en) | 2002-12-30 | 2004-08-24 | Intel Corporation | Immersion lithography |
| TWI247339B (en) | 2003-02-21 | 2006-01-11 | Asml Holding Nv | Lithographic printing with polarized light |
| EP1598855B1 (en) | 2003-02-26 | 2015-04-22 | Nikon Corporation | Exposure apparatus and method, and method of producing apparatus |
| JP4352930B2 (ja) * | 2003-02-26 | 2009-10-28 | 株式会社ニコン | 露光装置、露光方法及びデバイス製造方法 |
| US7206059B2 (en) | 2003-02-27 | 2007-04-17 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
| US6943941B2 (en) | 2003-02-27 | 2005-09-13 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
| US7029832B2 (en) | 2003-03-11 | 2006-04-18 | Samsung Electronics Co., Ltd. | Immersion lithography methods using carbon dioxide |
| US20050164522A1 (en) | 2003-03-24 | 2005-07-28 | Kunz Roderick R. | Optical fluids, and systems and methods of making and using the same |
| KR101345474B1 (ko) | 2003-03-25 | 2013-12-27 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| WO2004090956A1 (ja) | 2003-04-07 | 2004-10-21 | Nikon Corporation | 露光装置及びデバイス製造方法 |
| JP4488004B2 (ja) | 2003-04-09 | 2010-06-23 | 株式会社ニコン | 液浸リソグラフィ流体制御システム |
| CN1771463A (zh) | 2003-04-10 | 2006-05-10 | 株式会社尼康 | 用于沉浸光刻装置收集液体的溢出通道 |
| JP4656057B2 (ja) | 2003-04-10 | 2011-03-23 | 株式会社ニコン | 液浸リソグラフィ装置用電気浸透素子 |
| CN101061429B (zh) | 2003-04-10 | 2015-02-04 | 株式会社尼康 | 包括用于沉浸光刻装置的真空清除的环境系统 |
| KR101323993B1 (ko) | 2003-04-10 | 2013-10-30 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템 |
| WO2004092830A2 (en) | 2003-04-11 | 2004-10-28 | Nikon Corporation | Liquid jet and recovery system for immersion lithography |
| SG139733A1 (en) | 2003-04-11 | 2008-02-29 | Nikon Corp | Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly |
| EP2161621B1 (en) | 2003-04-11 | 2018-10-24 | Nikon Corporation | Cleanup method for optics in an immersion lithography apparatus, and corresponding immersion lithography apparatus |
| KR101369582B1 (ko) | 2003-04-17 | 2014-03-04 | 가부시키가이샤 니콘 | 액침 리소그래피에서 이용하기 위한 오토포커스 소자의 광학적 배열 |
| JP4146755B2 (ja) | 2003-05-09 | 2008-09-10 | 松下電器産業株式会社 | パターン形成方法 |
| JP4025683B2 (ja) | 2003-05-09 | 2007-12-26 | 松下電器産業株式会社 | パターン形成方法及び露光装置 |
| EP1477856A1 (en) | 2003-05-13 | 2004-11-17 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| TWI295414B (en) | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| TWI614794B (zh) | 2003-05-23 | 2018-02-11 | Nikon Corp | 曝光方法及曝光裝置以及元件製造方法 |
| JP2004349645A (ja) * | 2003-05-26 | 2004-12-09 | Sony Corp | 液浸差動排液静圧浮上パッド、原盤露光装置および液侵差動排液による露光方法 |
| DE10324477A1 (de) | 2003-05-30 | 2004-12-30 | Carl Zeiss Smt Ag | Mikrolithographische Projektionsbelichtungsanlage |
| US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1486828B1 (en) * | 2003-06-09 | 2013-10-09 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4054285B2 (ja) | 2003-06-12 | 2008-02-27 | 松下電器産業株式会社 | パターン形成方法 |
| JP4084710B2 (ja) | 2003-06-12 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
| TWI543235B (zh) | 2003-06-19 | 2016-07-21 | 尼康股份有限公司 | A method of manufacturing an exposure apparatus and an element |
| US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
| JP4084712B2 (ja) | 2003-06-23 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
| JP4029064B2 (ja) | 2003-06-23 | 2008-01-09 | 松下電器産業株式会社 | パターン形成方法 |
| US6809794B1 (en) | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
| JP3862678B2 (ja) | 2003-06-27 | 2006-12-27 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| EP1498778A1 (en) | 2003-06-27 | 2005-01-19 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1494079B1 (en) * | 2003-06-27 | 2008-01-02 | ASML Netherlands B.V. | Lithographic Apparatus |
| US7236232B2 (en) | 2003-07-01 | 2007-06-26 | Nikon Corporation | Using isotopically specified fluids as optical elements |
| KR101209540B1 (ko) | 2003-07-09 | 2012-12-07 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| US7384149B2 (en) | 2003-07-21 | 2008-06-10 | Asml Netherlands B.V. | Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system |
| US7006209B2 (en) | 2003-07-25 | 2006-02-28 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
| US7326522B2 (en) | 2004-02-11 | 2008-02-05 | Asml Netherlands B.V. | Device manufacturing method and a substrate |
| EP1503244A1 (en) * | 2003-07-28 | 2005-02-02 | ASML Netherlands B.V. | Lithographic projection apparatus and device manufacturing method |
| US7175968B2 (en) | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
| US7779781B2 (en) | 2003-07-31 | 2010-08-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7700267B2 (en) | 2003-08-11 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion fluid for immersion lithography, and method of performing immersion lithography |
| US7579135B2 (en) | 2003-08-11 | 2009-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography apparatus for manufacture of integrated circuits |
| US7061578B2 (en) | 2003-08-11 | 2006-06-13 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
| US7085075B2 (en) | 2003-08-12 | 2006-08-01 | Carl Zeiss Smt Ag | Projection objectives including a plurality of mirrors with lenses ahead of mirror M3 |
| US6844206B1 (en) | 2003-08-21 | 2005-01-18 | Advanced Micro Devices, Llp | Refractive index system monitor and control for immersion lithography |
| US7070915B2 (en) | 2003-08-29 | 2006-07-04 | Tokyo Electron Limited | Method and system for drying a substrate |
| US6954256B2 (en) | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
| US7014966B2 (en) | 2003-09-02 | 2006-03-21 | Advanced Micro Devices, Inc. | Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems |
| KR20170070264A (ko) | 2003-09-03 | 2017-06-21 | 가부시키가이샤 니콘 | 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법 |
| JP4378136B2 (ja) | 2003-09-04 | 2009-12-02 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| US6961186B2 (en) | 2003-09-26 | 2005-11-01 | Takumi Technology Corp. | Contact printing using a magnified mask image |
| EP1519230A1 (en) * | 2003-09-29 | 2005-03-30 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4513299B2 (ja) * | 2003-10-02 | 2010-07-28 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
| JP4515209B2 (ja) * | 2003-10-02 | 2010-07-28 | 株式会社ニコン | 露光装置及び露光方法、並びにデバイス製造方法 |
| US7369217B2 (en) | 2003-10-03 | 2008-05-06 | Micronic Laser Systems Ab | Method and device for immersion lithography |
| US7678527B2 (en) | 2003-10-16 | 2010-03-16 | Intel Corporation | Methods and compositions for providing photoresist with improved properties for contacting liquids |
| JP2005159322A (ja) * | 2003-10-31 | 2005-06-16 | Nikon Corp | 定盤、ステージ装置及び露光装置並びに露光方法 |
| EP1685446A2 (en) | 2003-11-05 | 2006-08-02 | DSM IP Assets B.V. | A method and apparatus for producing microchips |
| US7924397B2 (en) | 2003-11-06 | 2011-04-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-corrosion layer on objective lens for liquid immersion lithography applications |
| US8854602B2 (en) | 2003-11-24 | 2014-10-07 | Asml Netherlands B.V. | Holding device for an optical element in an objective |
| US7545481B2 (en) | 2003-11-24 | 2009-06-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7125652B2 (en) | 2003-12-03 | 2006-10-24 | Advanced Micro Devices, Inc. | Immersion lithographic process using a conforming immersion medium |
| US7385764B2 (en) | 2003-12-15 | 2008-06-10 | Carl Zeiss Smt Ag | Objectives as a microlithography projection objective with at least one liquid lens |
| EP1697798A2 (en) | 2003-12-15 | 2006-09-06 | Carl Zeiss SMT AG | Projection objective having a high aperture and a planar end surface |
| US7460206B2 (en) | 2003-12-19 | 2008-12-02 | Carl Zeiss Smt Ag | Projection objective for immersion lithography |
| US20050185269A1 (en) | 2003-12-19 | 2005-08-25 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
| WO2005059645A2 (en) | 2003-12-19 | 2005-06-30 | Carl Zeiss Smt Ag | Microlithography projection objective with crystal elements |
| JP2005183744A (ja) * | 2003-12-22 | 2005-07-07 | Nikon Corp | 露光装置及びデバイス製造方法 |
| US7589818B2 (en) | 2003-12-23 | 2009-09-15 | Asml Netherlands B.V. | Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus |
| US7394521B2 (en) | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7119884B2 (en) | 2003-12-24 | 2006-10-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US20050147920A1 (en) | 2003-12-30 | 2005-07-07 | Chia-Hui Lin | Method and system for immersion lithography |
| US7088422B2 (en) | 2003-12-31 | 2006-08-08 | International Business Machines Corporation | Moving lens for immersion optical lithography |
| JP4371822B2 (ja) | 2004-01-06 | 2009-11-25 | キヤノン株式会社 | 露光装置 |
| JP4429023B2 (ja) | 2004-01-07 | 2010-03-10 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| US20050153424A1 (en) | 2004-01-08 | 2005-07-14 | Derek Coon | Fluid barrier with transparent areas for immersion lithography |
| KR101150037B1 (ko) | 2004-01-14 | 2012-07-02 | 칼 짜이스 에스엠티 게엠베하 | 반사굴절식 투영 대물렌즈 |
| CN101793993B (zh) | 2004-01-16 | 2013-04-03 | 卡尔蔡司Smt有限责任公司 | 光学元件、光学布置及系统 |
| WO2005069078A1 (en) | 2004-01-19 | 2005-07-28 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus with immersion projection lens |
| EP1706793B1 (en) | 2004-01-20 | 2010-03-03 | Carl Zeiss SMT AG | Exposure apparatus and measuring device for a projection lens |
| US7026259B2 (en) | 2004-01-21 | 2006-04-11 | International Business Machines Corporation | Liquid-filled balloons for immersion lithography |
| US7391501B2 (en) | 2004-01-22 | 2008-06-24 | Intel Corporation | Immersion liquids with siloxane polymer for immersion lithography |
| JP2007520893A (ja) | 2004-02-03 | 2007-07-26 | ロチェスター インスティテュート オブ テクノロジー | 流体を使用したフォトリソグラフィ法及びそのシステム |
| US7050146B2 (en) | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1716454A1 (en) | 2004-02-09 | 2006-11-02 | Carl Zeiss SMT AG | Projection objective for a microlithographic projection exposure apparatus |
| CN101727021A (zh) | 2004-02-13 | 2010-06-09 | 卡尔蔡司Smt股份公司 | 微平版印刷投影曝光装置的投影物镜 |
| JP2007523383A (ja) | 2004-02-18 | 2007-08-16 | コーニング インコーポレイテッド | 深紫外光による大開口数結像のための反射屈折結像光学系 |
| US20050205108A1 (en) | 2004-03-16 | 2005-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for immersion lithography lens cleaning |
| US7027125B2 (en) | 2004-03-25 | 2006-04-11 | International Business Machines Corporation | System and apparatus for photolithography |
| JP4525676B2 (ja) | 2004-03-25 | 2010-08-18 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
| JP4510494B2 (ja) * | 2004-03-29 | 2010-07-21 | キヤノン株式会社 | 露光装置 |
| US7084960B2 (en) | 2004-03-29 | 2006-08-01 | Intel Corporation | Lithography using controlled polarization |
| US7034917B2 (en) | 2004-04-01 | 2006-04-25 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufactured thereby |
| US7227619B2 (en) | 2004-04-01 | 2007-06-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7295283B2 (en) | 2004-04-02 | 2007-11-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7091502B2 (en) | 2004-05-12 | 2006-08-15 | Taiwan Semiconductor Manufacturing, Co., Ltd. | Apparatus and method for immersion lithography |
| US7486381B2 (en) | 2004-05-21 | 2009-02-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4623095B2 (ja) | 2004-06-17 | 2011-02-02 | 株式会社ニコン | 液浸リソグラフィレンズの流体圧力補正 |
| US7057702B2 (en) | 2004-06-23 | 2006-06-06 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4565272B2 (ja) | 2004-07-01 | 2010-10-20 | 株式会社ニコン | 液浸リソグラフィのための動的流体制御システム |
| US7701550B2 (en) | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7355674B2 (en) | 2004-09-28 | 2008-04-08 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and computer program product |
| US7161654B2 (en) | 2004-12-02 | 2007-01-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7265813B2 (en) | 2004-12-28 | 2007-09-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
-
2005
- 2005-03-23 JP JP2006511475A patent/JP4525676B2/ja not_active Expired - Fee Related
- 2005-03-23 KR KR1020177003483A patent/KR101851511B1/ko not_active Expired - Fee Related
- 2005-03-23 KR KR1020137015943A patent/KR101504445B1/ko not_active Expired - Fee Related
- 2005-03-23 WO PCT/JP2005/005254 patent/WO2005093791A1/ja not_active Ceased
- 2005-03-23 KR KR1020127025345A patent/KR101441777B1/ko not_active Expired - Fee Related
- 2005-03-23 TW TW097127865A patent/TWI402893B/zh not_active IP Right Cessation
- 2005-03-23 TW TW106109736A patent/TWI628697B/zh not_active IP Right Cessation
- 2005-03-23 TW TW094108912A patent/TWI358746B/zh not_active IP Right Cessation
- 2005-03-23 TW TW104127306A patent/TWI606485B/zh not_active IP Right Cessation
- 2005-03-23 TW TW106145839A patent/TW201816844A/zh unknown
- 2005-03-23 TW TW101149735A patent/TWI518744B/zh not_active IP Right Cessation
- 2005-03-23 KR KR1020067016062A patent/KR101253355B1/ko not_active Expired - Fee Related
- 2005-03-23 KR KR1020187010650A patent/KR20180042456A/ko not_active Ceased
- 2005-03-23 TW TW100139028A patent/TWI486719B/zh not_active IP Right Cessation
- 2005-03-23 KR KR1020147008125A patent/KR101607035B1/ko not_active Expired - Fee Related
- 2005-03-23 KR KR1020147032263A patent/KR101707294B1/ko not_active Expired - Fee Related
- 2005-03-23 KR KR1020117025951A patent/KR101250155B1/ko not_active Expired - Fee Related
- 2005-03-23 US US10/593,802 patent/US8111373B2/en not_active Expired - Fee Related
-
2006
- 2006-12-08 US US11/635,607 patent/US8169590B2/en not_active Expired - Fee Related
-
2009
- 2009-03-11 US US12/382,229 patent/US8411248B2/en not_active Expired - Fee Related
-
2010
- 2010-04-05 JP JP2010087336A patent/JP5310632B2/ja not_active Expired - Fee Related
-
2011
- 2011-06-09 JP JP2011129493A patent/JP5545270B2/ja not_active Expired - Fee Related
-
2012
- 2012-03-30 JP JP2012083156A patent/JP5545315B2/ja not_active Expired - Fee Related
-
2013
- 2013-03-07 US US13/789,308 patent/US9046790B2/en not_active Expired - Fee Related
- 2013-07-12 JP JP2013146581A patent/JP5673747B2/ja not_active Expired - Fee Related
-
2014
- 2014-02-03 JP JP2014018562A patent/JP5790803B2/ja not_active Expired - Fee Related
-
2015
- 2015-01-15 JP JP2015005854A patent/JP5971358B2/ja not_active Expired - Fee Related
- 2015-04-29 US US14/699,185 patent/US9411248B2/en not_active Expired - Fee Related
- 2015-12-04 JP JP2015237657A patent/JP6160681B2/ja not_active Expired - Fee Related
-
2016
- 2016-07-21 US US15/216,255 patent/US10126661B2/en not_active Expired - Fee Related
- 2016-09-30 JP JP2016192920A patent/JP6315050B2/ja not_active Expired - Lifetime
- 2016-09-30 JP JP2016192921A patent/JP6304335B2/ja not_active Expired - Fee Related
- 2016-09-30 JP JP2016192922A patent/JP6315051B2/ja not_active Expired - Lifetime
- 2016-09-30 JP JP2016192923A patent/JP6315052B2/ja not_active Expired - Lifetime
-
2017
- 2017-12-04 JP JP2017232520A patent/JP2018041107A/ja active Pending
-
2018
- 2018-10-26 US US16/172,161 patent/US20190064678A1/en not_active Abandoned
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999049504A1 (fr) | 1998-03-26 | 1999-09-30 | Nikon Corporation | Procede et systeme d'exposition par projection |
| JP2001190996A (ja) | 2000-01-11 | 2001-07-17 | Matsushita Electric Ind Co Ltd | プリント配線板の製造装置およびそれを用いたプリント配線板の製造方法 |
Also Published As
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101607035B1 (ko) | 노광 장치 및 디바이스 제조 방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A107 | Divisional application of patent | ||
| PA0104 | Divisional application for international application |
St.27 status event code: A-0-1-A10-A16-div-PA0104 St.27 status event code: A-0-1-A10-A18-div-PA0104 |
|
| A201 | Request for examination | ||
| E13-X000 | Pre-grant limitation requested |
St.27 status event code: A-2-3-E10-E13-lim-X000 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
|
| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
|
| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
|
| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
|
| A107 | Divisional application of patent | ||
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| PA0104 | Divisional application for international application |
St.27 status event code: A-0-1-A10-A16-div-PA0104 St.27 status event code: A-0-1-A10-A18-div-PA0104 |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
|
| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
|
| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-3-3-R10-R18-oth-X000 |
|
| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
St.27 status event code: A-1-2-D10-D22-exm-PE0701 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
St.27 status event code: A-2-4-F10-F11-exm-PR0701 |
|
| PR1002 | Payment of registration fee |
Fee payment year number: 1 St.27 status event code: A-2-2-U10-U12-oth-PR1002 |
|
| PG1601 | Publication of registration |
St.27 status event code: A-4-4-Q10-Q13-nap-PG1601 |
|
| FPAY | Annual fee payment |
Payment date: 20190305 Year of fee payment: 4 |
|
| PR1001 | Payment of annual fee |
Fee payment year number: 4 St.27 status event code: A-4-4-U10-U11-oth-PR1001 |
|
| PC1903 | Unpaid annual fee |
Not in force date: 20200323 Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE St.27 status event code: A-4-4-U10-U13-oth-PC1903 |
|
| PC1903 | Unpaid annual fee |
Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE Not in force date: 20200323 St.27 status event code: N-4-6-H10-H13-oth-PC1903 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-5-5-R10-R18-oth-X000 |