KR101308281B1 - 비닐 에테르 가교제를 사용하는 무반사 코팅 - Google Patents

비닐 에테르 가교제를 사용하는 무반사 코팅 Download PDF

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Publication number
KR101308281B1
KR101308281B1 KR1020067022125A KR20067022125A KR101308281B1 KR 101308281 B1 KR101308281 B1 KR 101308281B1 KR 1020067022125 A KR1020067022125 A KR 1020067022125A KR 20067022125 A KR20067022125 A KR 20067022125A KR 101308281 B1 KR101308281 B1 KR 101308281B1
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South Korea
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composition
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crosslinked
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KR1020067022125A
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Korean (ko)
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KR20070012812A (ko
Inventor
더글라스 제이. 구어레오
로버트 씨. 콕스
마크 더블유. 와이머
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브레우어 사이언스 인코포레이션
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C43/00—Ethers; Compounds having groups, groups or groups
    • C07C43/02—Ethers
    • C07C43/03—Ethers having all ether-oxygen atoms bound to acyclic carbon atoms
    • C07C43/14—Unsaturated ethers
    • C07C43/164—Unsaturated ethers containing six-membered aromatic rings
    • C07C43/166—Unsaturated ethers containing six-membered aromatic rings having unsaturation outside the aromatic rings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/952—Utilizing antireflective layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31667—Next to addition polymer from unsaturated monomers, or aldehyde or ketone condensation product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal
    • Y10T428/31692—Next to addition polymer from unsaturated monomers
    • Y10T428/31699—Ester, halide or nitrile of addition polymer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31855—Of addition polymer from unsaturated monomers
    • Y10T428/31935—Ester, halide or nitrile of addition polymer

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Paints Or Removers (AREA)
KR1020067022125A 2004-04-29 2005-04-15 비닐 에테르 가교제를 사용하는 무반사 코팅 Expired - Lifetime KR101308281B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US56632904P 2004-04-29 2004-04-29
US60/566,329 2004-04-29
US11/105,862 US20050255410A1 (en) 2004-04-29 2005-04-14 Anti-reflective coatings using vinyl ether crosslinkers
US11/105,862 2005-04-14
PCT/US2005/012851 WO2005111719A2 (en) 2004-04-29 2005-04-15 Anti-reflective coatings using vinyl ether crosslinkers

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020117031664A Division KR101308191B1 (ko) 2004-04-29 2005-04-15 비닐 에테르 가교제를 사용하는 무반사 코팅

Publications (2)

Publication Number Publication Date
KR20070012812A KR20070012812A (ko) 2007-01-29
KR101308281B1 true KR101308281B1 (ko) 2013-09-13

Family

ID=35309829

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020067022125A Expired - Lifetime KR101308281B1 (ko) 2004-04-29 2005-04-15 비닐 에테르 가교제를 사용하는 무반사 코팅
KR1020117031664A Expired - Fee Related KR101308191B1 (ko) 2004-04-29 2005-04-15 비닐 에테르 가교제를 사용하는 무반사 코팅

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020117031664A Expired - Fee Related KR101308191B1 (ko) 2004-04-29 2005-04-15 비닐 에테르 가교제를 사용하는 무반사 코팅

Country Status (7)

Country Link
US (4) US20050255410A1 (enExample)
EP (1) EP1743219B1 (enExample)
JP (2) JP5972510B2 (enExample)
KR (2) KR101308281B1 (enExample)
CN (2) CN1981240B (enExample)
TW (1) TWI387612B (enExample)
WO (1) WO2005111719A2 (enExample)

Families Citing this family (42)

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US20050214674A1 (en) * 2004-03-25 2005-09-29 Yu Sui Positive-working photoimageable bottom antireflective coating
US20050255410A1 (en) 2004-04-29 2005-11-17 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
US20070207406A1 (en) * 2004-04-29 2007-09-06 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
EP2866093A1 (en) * 2004-05-14 2015-04-29 Nissan Chemical Industries, Limited Anti-reflective coating forming composition containing vinyl ether compound and polyimide
US7816071B2 (en) * 2005-02-10 2010-10-19 Az Electronic Materials Usa Corp. Process of imaging a photoresist with multiple antireflective coatings
KR100662542B1 (ko) * 2005-06-17 2006-12-28 제일모직주식회사 반사방지 하드마스크 조성물 및 이를 이용하여 기판 상에패턴화된 재료 형상을 형성시키는 방법
KR100703007B1 (ko) * 2005-11-17 2007-04-06 삼성전자주식회사 감광성 유기 반사 방지막 형성용 조성물 및 이를 이용한패턴 형성 방법
US20070117041A1 (en) * 2005-11-22 2007-05-24 Christoph Noelscher Photosensitive coating for enhancing a contrast of a photolithographic exposure
US20070298176A1 (en) * 2006-06-26 2007-12-27 Dipietro Richard Anthony Aromatic vinyl ether based reverse-tone step and flash imprint lithography
US7914974B2 (en) * 2006-08-18 2011-03-29 Brewer Science Inc. Anti-reflective imaging layer for multiple patterning process
US9645494B2 (en) 2006-12-13 2017-05-09 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition containing low molecular weight dissolution accelerator
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US7976894B1 (en) * 2007-11-13 2011-07-12 Brewer Science Inc. Materials with thermally reversible curing mechanism
KR101647158B1 (ko) 2008-01-29 2016-08-09 브레우어 사이언스 인코포레이션 다중 다크 필드 노출에 의한, 하드마스크 패턴화를 위한 온-트랙 공정
US9638999B2 (en) * 2008-02-22 2017-05-02 Brewer Science Inc. Dual-layer light-sensitive developer-soluble bottom anti-reflective coatings for 193-nm lithography
JP5739325B2 (ja) * 2008-04-23 2015-06-24 ブルーワー サイエンス アイ エヌシー． マイクロリソグラフィー用の感光性ハードマスク
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WO2011074433A1 (ja) * 2009-12-16 2011-06-23 日産化学工業株式会社 感光性レジスト下層膜形成組成物
KR20120105545A (ko) * 2010-01-18 2012-09-25 닛산 가가쿠 고교 가부시키 가이샤 감광성 레지스트 하층막 형성 조성물 및 레지스트 패턴의 형성 방법
KR20110112641A (ko) * 2010-04-07 2011-10-13 한국과학기술연구원 광활성 그룹을 측쇄로 가지는 사다리 구조의 폴리실세스퀴옥산 및 이의 제조방법
US8685615B2 (en) 2010-06-17 2014-04-01 Nissan Chemical Industries, Ltd. Photosensitive resist underlayer film forming composition
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JP6035017B2 (ja) 2010-10-04 2016-11-30 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 下層組成物および下層を像形成する方法
JP5820676B2 (ja) * 2010-10-04 2015-11-24 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 下層組成物および下層を像形成する方法
KR101900976B1 (ko) 2010-12-27 2018-09-20 브레우어 사이언스 인코포레이션 개선된 패터닝 요구를 위해 작은 특징 부분(feature)을 패터닝하는 방법
KR102115442B1 (ko) * 2012-04-23 2020-05-28 브레우어 사이언스 인코포레이션 감광성의 현상제-가용성 하부 반사-방지 코팅 재료
US9348228B2 (en) * 2013-01-03 2016-05-24 Globalfoundries Inc. Acid-strippable silicon-containing antireflective coating
JP6119668B2 (ja) 2013-06-11 2017-04-26 信越化学工業株式会社 下層膜材料及びパターン形成方法
JP6119669B2 (ja) 2013-06-11 2017-04-26 信越化学工業株式会社 下層膜材料及びパターン形成方法
JP6119667B2 (ja) 2013-06-11 2017-04-26 信越化学工業株式会社 下層膜材料及びパターン形成方法
JP6135600B2 (ja) 2013-06-11 2017-05-31 信越化学工業株式会社 下層膜材料及びパターン形成方法
WO2019065476A1 (ja) * 2017-09-29 2019-04-04 富士フイルム株式会社 着色感光性組成物および光学フィルタの製造方法
KR102285555B1 (ko) * 2018-06-12 2021-08-03 주식회사 엘지화학 코팅 조성물 및 이를 이용한 마이크로 전자 소자 제조용 포지티브형 패턴의 제조방법
US11656550B2 (en) 2020-09-01 2023-05-23 Tokyo Electron Limited Controlling semiconductor film thickness

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