JP5368674B2 - 現像液に可溶な材料および現像液に可溶な材料をビアファーストデュアルダマシン適用において用いる方法 - Google Patents
現像液に可溶な材料および現像液に可溶な材料をビアファーストデュアルダマシン適用において用いる方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 92
- 230000009977 dual effect Effects 0.000 title claims abstract description 26
- 239000002195 soluble material Substances 0.000 title 2
- 239000000203 mixture Substances 0.000 claims abstract description 102
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 20
- 229920005575 poly(amic acid) Polymers 0.000 claims abstract description 14
- 238000000059 patterning Methods 0.000 claims abstract description 10
- 230000003667 anti-reflective effect Effects 0.000 claims abstract description 7
- 229920000728 polyester Polymers 0.000 claims abstract description 4
- 229920000642 polymer Polymers 0.000 claims description 45
- 239000000178 monomer Substances 0.000 claims description 19
- 150000001875 compounds Chemical class 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 13
- 239000002904 solvent Substances 0.000 claims description 9
- 125000001931 aliphatic group Chemical group 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 6
- 238000010304 firing Methods 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical group [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 6
- 239000004593 Epoxy Substances 0.000 claims description 5
- 125000003118 aryl group Chemical group 0.000 claims description 5
- 239000003431 cross linking reagent Substances 0.000 claims description 5
- 238000012876 topography Methods 0.000 claims description 5
- 125000000524 functional group Chemical group 0.000 claims description 4
- 125000004122 cyclic group Chemical group 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 2
- MVETVBHSYIYRCX-UHFFFAOYSA-I [Ta+5].[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O Chemical compound [Ta+5].[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O MVETVBHSYIYRCX-UHFFFAOYSA-I 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229920003180 amino resin Polymers 0.000 claims description 2
- 125000005428 anthryl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C3C(*)=C([H])C([H])=C([H])C3=C([H])C2=C1[H] 0.000 claims description 2
- 125000006267 biphenyl group Chemical group 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 125000001624 naphthyl group Chemical group 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims description 2
- 229910021342 tungsten silicide Inorganic materials 0.000 claims description 2
- 239000007864 aqueous solution Substances 0.000 claims 1
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 claims 1
- 230000005855 radiation Effects 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 20
- 239000006117 anti-reflective coating Substances 0.000 abstract description 19
- 238000011049 filling Methods 0.000 abstract description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052802 copper Inorganic materials 0.000 abstract description 3
- 239000010949 copper Substances 0.000 abstract description 3
- 239000004642 Polyimide Substances 0.000 abstract description 2
- 229920001721 polyimide Polymers 0.000 abstract description 2
- 238000003491 array Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 51
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 49
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 17
- 239000007787 solid Substances 0.000 description 15
- 239000003153 chemical reaction reagent Substances 0.000 description 14
- 239000012452 mother liquor Substances 0.000 description 13
- 238000002360 preparation method Methods 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 11
- 238000009472 formulation Methods 0.000 description 10
- 238000000576 coating method Methods 0.000 description 7
- 238000002156 mixing Methods 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 239000004971 Cross linker Substances 0.000 description 5
- 238000011161 development Methods 0.000 description 5
- 230000018109 developmental process Effects 0.000 description 5
- 239000004615 ingredient Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- HTZCNXWZYVXIMZ-UHFFFAOYSA-M benzyl(triethyl)azanium;chloride Chemical compound [Cl-].CC[N+](CC)(CC)CC1=CC=CC=C1 HTZCNXWZYVXIMZ-UHFFFAOYSA-M 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 150000004985 diamines Chemical class 0.000 description 3
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000003921 oil Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- -1 propyl isocyanurate Chemical compound 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 2
- YWQIVUUGLJFRHG-UHFFFAOYSA-N 3,7-dihydroxynaphthalene-1-carboxylic acid Chemical compound C1=C(O)C=C2C(C(=O)O)=CC(O)=CC2=C1 YWQIVUUGLJFRHG-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 125000006159 dianhydride group Chemical group 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000009987 spinning Methods 0.000 description 2
- FENFUOGYJVOCRY-UHFFFAOYSA-N 1-propoxypropan-2-ol Chemical compound CCCOCC(C)O FENFUOGYJVOCRY-UHFFFAOYSA-N 0.000 description 1
- MSTZGVRUOMBULC-UHFFFAOYSA-N 2-amino-4-[2-(3-amino-4-hydroxyphenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]phenol Chemical compound C1=C(O)C(N)=CC(C(C=2C=C(N)C(O)=CC=2)(C(F)(F)F)C(F)(F)F)=C1 MSTZGVRUOMBULC-UHFFFAOYSA-N 0.000 description 1
- QMWOUSYSNFCKAZ-UHFFFAOYSA-N 3,7-dihydroxynaphthalene-2-carboxylic acid Chemical compound OC1=CC=C2C=C(O)C(C(=O)O)=CC2=C1 QMWOUSYSNFCKAZ-UHFFFAOYSA-N 0.000 description 1
- XGWFJBFNAQHLEF-UHFFFAOYSA-N 9-anthroic acid Chemical compound C1=CC=C2C(C(=O)O)=C(C=CC=C3)C3=CC2=C1 XGWFJBFNAQHLEF-UHFFFAOYSA-N 0.000 description 1
- 229920003319 Araldite® Polymers 0.000 description 1
- 229920003270 Cymel® Polymers 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- 229920002274 Nalgene Polymers 0.000 description 1
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 1
- 125000002777 acetyl group Chemical class [H]C([H])([H])C(*)=O 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical group 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 150000007973 cyanuric acids Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- RKHXQBLJXBGEKF-UHFFFAOYSA-M tetrabutylphosphanium;bromide Chemical compound [Br-].CCCC[P+](CCCC)(CCCC)CCCC RKHXQBLJXBGEKF-UHFFFAOYSA-M 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
- H01L21/76808—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving intermediate temporary filling with material
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Materials For Photolithography (AREA)
Description
(関連出願)
本願は2003年10月15日提出の出願番号第60/511,762号仮出願「WET− DEVELOP (RECESS) MATERIALS BASED ON POLYAMIC ACIDS FOR VIA−FIRST DUAL DAMASCENE APPLICATIONS」の優先権の利益を主張するものであり、当該仮出願を引用として本明細書に含める。
式中、XおよびYの各々はアリール基および脂肪族基からなる群からそれぞれ独立して選ばれる。好ましいXおよびY群は、置換および無置換のフェニル基、ビフェニル基、ナフチル基、およびアントリル基、ならびに、置換および無置換のC1〜C12脂肪族(好ましくはアルキル)基からなる群から選ばれるものを含む。
式中、XおよびYは上記と同様に定義される。
本発明における使用にもっとも好ましいポリアミド酸は、
式中、
Xは−O−、−S−、−CH2−、−C(CF3)2−、および−C(CH3)2−からなる群から選ばれ、
nは2〜8、そして
各Rは−Hおよび−OHからなる群からそれぞれ独立して選ばれる。
好ましいモノマーの1つは、式
反応式A
(実施例)
本発明に係る好適な方法を以下の実施例にしたがって記載する。なお、これらの実施例は説明のために示されたものであり、本発明の全体の範囲を限定するものではない。
(1.ポリマー母液の作製)
これらの実施例で用いられる組成物を作製するために、まず、ポリマーの母液と色素溶液を準備した。ポリマーの母液は、以下の試薬を、表記の順に、混合して作成した。
39.46gの2、2−ビス(3−アミノ−4−ヒドロキシフェニル)ヘキサフルオロプロパン(ビス−AP−AF; ChrisKev Corp.社から入手);
1.24gの3、3’−ジヒドロキシ−4、4’−アミノベンジジン(HAB; ChrisKev Corp.社から入手);
500gのプロピレングリコールモノメチルエーテル(PGME; Harcross Corp.社から入手);
25gのピロメリト酸ニ無水物(PMDA; ChrisKev Corp.社から入手);および
91.3gのPGME
色素溶液は、以下の試薬を250mlのフラスコで混合して作製した。
7.25gのトリグリシジル エポキシ プロピル シアヌレート(TEPIC; Aldrich Chemical Corp.社から入手);
13.33gの3、7−ジヒドロキシ ナフトエ酸(Aldrich Chemical Corp.社から入手);
7.25gの9−アントラセン カルボン酸(TCI Chemicals Ltd.社から入手);
0.56gのベンジル トリエチル 塩化アンモニウム(BTEAC; Aldrich Chemical Corp.社から入手);および
122.32gのPGME.
(低速現像、アセタールフォトレジスト適合組成物の作製)
この実施例の組成物は以下の成分を一緒に混合して作製した。
55.0gの上述で作製されたポリマー溶液(5.5gのポリマー固体と49.5gのPGME);
16.5gの上述で作製された色素溶液(3.3gの色素固体と13.2gのPGME);
1.67gのMY720(Ciba−Geigy);
21.57gのPGME; および
36.12gのPGMEA
組成物の混合物の総重量は、130.86g、その内8%が固体であった。
(高速現像、ESCAPフォトレジスト適合組成物の作製)
この組成物は、以下の成分を混合することによって作製した。
24.0gの上述で作製したポリマー溶液(2.4gのポリマー固体、21.6gのPGME);
7.20gの色素溶液(1.44gの固体および5.76gのPGME);
0.72gのトリエポシキ プロピル シアヌレート(30%のポリマー固体);9.34gのPGME; および
15.73gのPGMEA
この組成物の総重量は、57.0g、固体は8%であった。
次に、上述の実施例1と同様の方法を用いて、組成物を、スピンコートし、処理し、考察した。近接焼成板を用いて、ウエハを焼成した。
(高速現像、ESCAPフォトレジスト適合組成物の作製)
この組成物は、以下の成分を混合して作製した。
12.0gの上述で作製したポリマー溶液(1.2gのポリマー固体、10.8gのPGME);
7.20gの上述で作製した色素溶液(1.44gの固体、5.76gのPGME);
0.4gのCY179MA(33%のポリマー固体; Vantico社から入手);
7.64gのPGME;および
10.76gのPGMEA
この組成物の総重量は、38.0g、固体は8%であった。
次に、上述の実施例1と同様の方法を用いて、組成物を、スピンコートし、処理し、考察した。近接焼成板を用いて、ウエハを焼成した。
表1は上述の実施例1〜3の組成物の、波長193nm、および248nmのときのnおよびkの値を示す。
(ポリエステルポリマーを用いる組成物の作製)
(1.ポリマー母液の作製)
以下を丸底フラスコ内で混合する。
9.61gのクエン酸(Aldrich社から入手);
13.91gのEX721(ナガセケミカル社から入手);
0.68gのテトラブチルホスホニウム ブロミド(Aldrich社から入手); および
96.80gのPGME
窒素雰囲気を確立し、反応は、100℃で16時間加熱した。溶液を周囲温度まで冷却し、瓶に詰めた。
色素溶液は以下の試薬を、窒素取り入れ口と、温度計と、濃縮器と、撹拌棒とを有する100ml、3首、丸底フラスコに入れ、撹拌した。
14.29gのTEPIC(日産化学工業から入手);
25.52gの3、7−ジヒドロキシナフトエ酸(Aldrich社から入手); 0.214gのイミダゾール(Aldrich社から入手); および
59.98gのPGME
反応フラスコを120℃に加熱した油槽に液浸させた。反応は、逆流で、24時間撹拌した。
10.0gの、本実施例に記載されたポリマー母液;
1.4gのN、N−ジグリシジル−4−グリシジルオキシアナリン(glycidyloxyanaline)(Aldrich社から入手);
3.45gのPGME; および
12.15gのプロピレン グリコール プロピル エーテル(PnP; Harcross社から入手)。
10.0gの、本実施例に記載するポリマー母液;
1.4gのN、N−ジクリシジル−4−グリシジルオキシアナリン(glycidyloxyanaline);
3.75gの、この実施例に記載する色素溶液;
3.45gのPGME; および
12.15gのPnP
(色素(ギャップ充填組成物)を含有しない組成物の作製)
(1.ポリマー母液の作製)
以下の成分を、丸底フラスコで混合した。
22.35g(0.0611モル)のビス−AP―AF; および
96.96gのPGME
次に、このフラスコを、60℃に維持した油槽に液浸した。水濃縮器をフラスコに取り付け、磁気撹拌器を用いて、フラスコの中身を撹拌した。
ビス−AP−AFが完全に溶解した後、10.0g(0.0458モル)のPMDAをその溶液に添加した。反応物を18時間撹拌し、その後、4.53g(0.0305モル)の無水フタル酸(Aldrich社から入手)を添加した。反応は、60℃で3時間撹拌し、周囲温度まで冷却した。
配合物(a) 以下の試薬を化合させた。
15gの、この実施例で準備したポリマー母液;
3.55gの架橋剤 CY179MA;
28.56gのPGME; および
16.90gのPGMEA
これらの試薬を撹拌し、その後、0.1μmのエンドポイントフィルタを介してろ過した。
配合物(b) 以下の試薬を化合させた。
36.30gの、この実施例で準備したポリマー母液;
4.00gの架橋剤 MY720(PGME中、50重量%溶液);
33.30gのPGME; および
26.40gのPGMEA
これらの試薬を撹拌し、その後、0.1μmのエンドポイントフィルタを介してろ過した。
配合物(c) 以下の試薬を化合させた。
36.30gの、この実施例で準備したポリマー母液;
4.00gの架橋剤 DEN438(Araldite社から入手、PGME中、50重量%溶液);
33.30gのPGME; および
26.40gのPGMEA
これらの試薬を撹拌し、その後、0.1μmのエンドポイントフィルタを介してろ過した。
配合物(d) 以下の試薬を化合させた。
10gの、この実施例で準備したポリマー母液;
1.08gの架橋剤 MY720(PGME中、50重量%溶液);
0.54gのトリスヒドロシキフェニル エタン;
11.56gのPGME; および
8.316gのPGMEA
これらの試薬を撹拌し、その後、0.1μmのエンドポイントフィルタを介してろ過した。
(色素(ギャップ充填組成物)を含有しない組成物の作製)
(1.低分子量、ポリマー母液の作製)
以下の試薬を丸底フラスコに加えた。
10.0g(0.0275モル)のビス−AP−AF; および
96.96gのPGME
次にフラスコを60℃に維持した油槽内に液浸した。水濃縮器を取り付け、磁気撹拌器を用いて、フラスコの中身を撹拌した。ビス−AP−AFが完全に溶解した後、3.0g(0.0137モル)のピロメリト酸ニ無水物をその溶液に添加した。反応は、18時間撹拌し、その後、4.07g(0.0275モル)の無水フタル酸を添加した。反応は、60℃で3時間撹拌し、周囲温度まで冷却した。
以下の試薬を化合させた。
36.30gの、この実施例で準備したポリマー母液;
4.00gの架橋剤 MY720(PGME中、50重量%溶液);
33.30gのPGME; および
26.40gのPGMEA
これらの試薬を撹拌し、その後、0.1μmのエンドポイントフィルタを介してろ過した。
Claims (34)
- ビアファーストデュアルダマシン構造の作製方法であって、
前記デュアルダマシン構造のビアとなる孔を定義する構造を含む基板を準備し、該構造は側壁と底部壁とを含む工程と、
組成物を少なくとも前記孔の側壁および底部壁の一部を含む前記基板の表面に適用する工程と、
前記組成物を焼成する工程と、
前記組成物に現像液を接触して前記組成物の一部を除去する工程と、を有し、
前記現像液は塩基を含む水溶液であり、
前記組成物は、溶剤系に溶解または分散した、ポリマーと、光減衰化合物または光減衰モイエティとを含む、方法。 - 前記基板が、ケイ素、アルミニウム、タングステン、ケイ化タングステン、ヒ化ガリウム、ゲルマニウム、タンタル、亜硝酸タンタル、およびSiGeから成る群から選ばれる、請求項1の方法。
- 前記組成物が前記適用工程後の層を備え、そして前記接触工程が前記層上に現像液をパドリングする工程を含む、請求項1または2の方法。
- 前記接触工程は、前記現像液を前記組成物に、30〜90秒の間接触させることを含む、請求項1〜3のいずれかの方法。
- 前記現像液は水酸化テトラメチルアンモニウム、水酸化カリウム、水酸化ナトリウム、およびこれらの混合物からなる群から選ばれる、請求項1〜4のいずれかの方法。
- 前記組成物は、前記接触工程前に平均的厚さを有する層を備え、前記接触工程によって、前記層が、現像液に1秒間接触する毎に厚さ1〜500オングストロームの割合で除去される、請求項1〜5のいずれかの方法。
- 前記ポリマーはポリエステルおよびポリアミド酸からなる群から選ばれる少なくとも1つである、請求項1〜6のいずれかの方法。
- 前記ポリマーは、前記焼成工程の前に、初期度のイミド化率を有し、焼成工程の後に第2度のイミド化率を有するポリアミド酸であり、前記第2度のイミド化率は、前記初期度のイミド化率より20以上大きい、請求項7の方法。
- 前記焼成工程は、前記組成物を130〜230℃の温度で加熱することを含む、請求項1〜8のいずれかの方法。
- 前記焼成工程は、30〜120秒の間行われる、請求項1〜9のいずれかの方法。
- 前記適用工程は、前記基板表面を平坦化するために十分な量の前記組成物を適用することを含む、請求項1の方法。
- 孔を定義する前記構造は、前記基板表面に上部境界を有し、前記接触工程は、前記組成物を前記上部境界より下の位置まで除去することを含む、請求項1の方法。
- 反射防止層を前記上部境界より下の位置まで除去された前記組成物に適用することを更に含む、請求項12の方法。
- フォトレジスト層を前記反射防止層上に適用する工程を更に含む、請求項13の方法。
- 孔を定義する前記構造は前記基板表面に上部境界を備え、前記接触工程は前記組成物の一部を除去することを含み、その際、前記組成物の層を前記基板表面より上に、また前記上部境界より上に維持する、請求項1の方法。
- 前記基板は、前記基板上に高密度領域と低密度領域を形成する複数のトポグラフィー形状を有し、
前記適用工程は、前記組成物を前記トポグラフィー形状の少なくとも一部に適用する、請求項1〜15のいずれかの方法。 - 前記焼成工程の後、前記組成物は前記トポグラフィー形状の上の層として形成され、該層の前記高密度領域上での厚さと前記低密度領域上での厚さとの偏りは20nm未満である、請求項16の方法。
- 前記ポリマーは、式
- XおよびYの各々は置換および無置換の、フェニル基、ビフェニル基、ナフチル基、およびアントリル基、ならびに、置換および無置換のC1〜C12脂肪族からなる群からそれぞれ独立して選ばれる、請求項18の方法。
- 前記ポリマーは、
式中、Xは−O−、−S−、−CH2−、−C(CF3)2−、および−C(CH3)2−からなる群から選ばれ、
nは2〜8であり、そして
各Rは−Hおよび−OHからなる群からそれぞれ独立して選ばれる、請求項1〜17のいずれかの方法。 - 前記ポリマーは、式
- 前記ポリマーは一対の末端を有し、該末端の少なくとも1つは
式中、XおよびYの各々は、アリール基および脂肪族基からなる群からそれぞれ独立して選ばれ、
前記エンドキャップモノマーは、室温において、式(I)または(II)の官能基よりも反応性が低い官能基を有する、請求項1〜17のいずれかの方法。 - 前記末端の両方とも前記エンドキャップモノマーを含有する、請求項22の方法。
- 前記エンドキャップモノマーは、式
- 前記末端の両方とも、式
- 前記組成物は、溶剤系に溶解または分散した架橋剤を含む、請求項1〜25のいずれかの方法。
- 前記光減衰モイエティは前記ポリマーに結合されている、請求項1〜26のいずれかの方法。
- 前記光減衰化合物は
式中Rは環状基および脂肪族基からなる群から選ばれる、請求項1〜26のいずれかの方法。 - 前記架橋剤は、アミノプラスト、エポシキ、シアヌレート、およびこれらの混合物からなる群から選択される、請求項26の方法。
- フォトレジスト層を前記接触工程後の前記組成物上に適用する工程を更に含む、請求項1〜29のいずれかの方法。
- 前記フォトレジスト層をパターン形成する工程を更に含む、請求項30の方法。
- 前記パターン形成工程は、前記フォトレジスト層を活性照射で露光し、前記露光したフォトレジスト層を現像することを含む、請求項31の方法。
- 前記パターン形成工程は、前記フォトレジスト層に前記デュアルダマシン構造のトレンチに対応したトレンチパターンを形成することを含む、請求項32の方法。
- 前記基板の前記構造に前記デュアルダマシン構造のトレンチをエッチングする工程を更に含む、請求項33の方法。
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-
2004
- 2004-10-15 JP JP2006535432A patent/JP5368674B2/ja active Active
- 2004-10-15 EP EP04795633.9A patent/EP1673801B1/en not_active Not-in-force
- 2004-10-15 US US10/966,909 patent/US7364835B2/en active Active
- 2004-10-15 KR KR1020067007008A patent/KR101189397B1/ko active IP Right Grant
- 2004-10-15 WO PCT/US2004/034495 patent/WO2005038878A2/en active Search and Examination
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US20050148170A1 (en) | 2005-07-07 |
US7364835B2 (en) | 2008-04-29 |
EP1673801A2 (en) | 2006-06-28 |
EP1673801B1 (en) | 2014-04-09 |
EP1673801A4 (en) | 2010-04-07 |
JP2007513491A (ja) | 2007-05-24 |
WO2005038878A3 (en) | 2006-12-07 |
KR101189397B1 (ko) | 2012-10-11 |
KR20060126954A (ko) | 2006-12-11 |
WO2005038878A2 (en) | 2005-04-28 |
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