KR101254803B1 - 반도체 장치의 제조 방법 - Google Patents

반도체 장치의 제조 방법 Download PDF

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Publication number
KR101254803B1
KR101254803B1 KR1020060036485A KR20060036485A KR101254803B1 KR 101254803 B1 KR101254803 B1 KR 101254803B1 KR 1020060036485 A KR1020060036485 A KR 1020060036485A KR 20060036485 A KR20060036485 A KR 20060036485A KR 101254803 B1 KR101254803 B1 KR 101254803B1
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KR
South Korea
Prior art keywords
lead
semiconductor device
chip
plating film
metal plating
Prior art date
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Expired - Lifetime
Application number
KR1020060036485A
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English (en)
Korean (ko)
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KR20060112611A (ko
Inventor
겐지 아마노
하지메 하세베
Original Assignee
르네사스 일렉트로닉스 가부시키가이샤
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Publication of KR20060112611A publication Critical patent/KR20060112611A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/456—Materials
    • H10W70/457—Materials of metallic layers on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/04—Manufacture or treatment of leadframes
    • H10W70/048—Mechanical treatments, e.g. punching, cutting, deforming or cold welding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H10W70/424—Cross-sectional shapes
    • H10W70/427—Bent parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Lead Frames For Integrated Circuits (AREA)
KR1020060036485A 2005-04-25 2006-04-24 반도체 장치의 제조 방법 Expired - Lifetime KR101254803B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00126392 2005-04-25
JP2005126392A JP4624170B2 (ja) 2005-04-25 2005-04-25 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR20060112611A KR20060112611A (ko) 2006-11-01
KR101254803B1 true KR101254803B1 (ko) 2013-04-15

Family

ID=37187473

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060036485A Expired - Lifetime KR101254803B1 (ko) 2005-04-25 2006-04-24 반도체 장치의 제조 방법

Country Status (5)

Country Link
US (4) US7429500B2 (https=)
JP (1) JP4624170B2 (https=)
KR (1) KR101254803B1 (https=)
CN (1) CN1855409B (https=)
TW (1) TWI401751B (https=)

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US8610156B2 (en) 2009-03-10 2013-12-17 Lg Innotek Co., Ltd. Light emitting device package
US9337360B1 (en) 2009-11-16 2016-05-10 Solar Junction Corporation Non-alloyed contacts for III-V based solar cells
US9214586B2 (en) 2010-04-30 2015-12-15 Solar Junction Corporation Semiconductor solar cell package
JP2012113919A (ja) * 2010-11-24 2012-06-14 Toshiba Corp 照明装置
US9524928B2 (en) 2010-12-13 2016-12-20 Infineon Technologies Americas Corp. Power quad flat no-lead (PQFN) package having control and driver circuits
US9711437B2 (en) 2010-12-13 2017-07-18 Infineon Technologies Americas Corp. Semiconductor package having multi-phase power inverter with internal temperature sensor
US9362215B2 (en) 2010-12-13 2016-06-07 Infineon Technologies Americas Corp. Power quad flat no-lead (PQFN) semiconductor package with leadframe islands for multi-phase power inverter
US9355995B2 (en) 2010-12-13 2016-05-31 Infineon Technologies Americas Corp. Semiconductor packages utilizing leadframe panels with grooves in connecting bars
US9443795B2 (en) 2010-12-13 2016-09-13 Infineon Technologies Americas Corp. Power quad flat no-lead (PQFN) package having bootstrap diodes on a common integrated circuit (IC)
US9449957B2 (en) 2010-12-13 2016-09-20 Infineon Technologies Americas Corp. Control and driver circuits on a power quad flat no-lead (PQFN) leadframe
US8587101B2 (en) * 2010-12-13 2013-11-19 International Rectifier Corporation Multi-chip module (MCM) power quad flat no-lead (PQFN) semiconductor package utilizing a leadframe for electrical interconnections
US9324646B2 (en) 2010-12-13 2016-04-26 Infineon Technologies America Corp. Open source power quad flat no-lead (PQFN) package
US9659845B2 (en) 2010-12-13 2017-05-23 Infineon Technologies Americas Corp. Power quad flat no-lead (PQFN) package in a single shunt inverter circuit
US9620954B2 (en) 2010-12-13 2017-04-11 Infineon Technologies Americas Corp. Semiconductor package having an over-temperature protection circuit utilizing multiple temperature threshold values
US8962989B2 (en) 2011-02-03 2015-02-24 Solar Junction Corporation Flexible hermetic semiconductor solar cell package with non-hermetic option
KR20130064477A (ko) * 2011-12-08 2013-06-18 삼성전자주식회사 단층 배선 패턴을 포함하는 인쇄회로기판
JP5919087B2 (ja) * 2012-05-10 2016-05-18 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
JP5947107B2 (ja) * 2012-05-23 2016-07-06 ルネサスエレクトロニクス株式会社 半導体装置
JP2016072376A (ja) * 2014-09-29 2016-05-09 ルネサスエレクトロニクス株式会社 半導体装置
US10090420B2 (en) 2016-01-22 2018-10-02 Solar Junction Corporation Via etch method for back contact multijunction solar cells
US9680035B1 (en) 2016-05-27 2017-06-13 Solar Junction Corporation Surface mount solar cell with integrated coverglass
US20190221502A1 (en) * 2018-01-17 2019-07-18 Microchip Technology Incorporated Down Bond in Semiconductor Devices
CN109576676B (zh) * 2018-12-25 2023-12-29 西安立芯光电科技有限公司 一种用于半导体激光器侧腔面镀膜的夹具
CN112151489B (zh) * 2020-09-01 2023-06-06 通富微电科技(南通)有限公司 引线框架、引线框架的形成方法及引线框架封装体
CN113013039B (zh) * 2021-02-02 2023-02-10 江西新菲新材料有限公司 引线框架的制备方法

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Also Published As

Publication number Publication date
US7514293B2 (en) 2009-04-07
TW200723414A (en) 2007-06-16
TWI401751B (zh) 2013-07-11
US20060240599A1 (en) 2006-10-26
US20110186976A1 (en) 2011-08-04
US7948068B2 (en) 2011-05-24
US20080305586A1 (en) 2008-12-11
US7429500B2 (en) 2008-09-30
JP2006303371A (ja) 2006-11-02
CN1855409B (zh) 2010-06-23
CN1855409A (zh) 2006-11-01
US8102035B2 (en) 2012-01-24
JP4624170B2 (ja) 2011-02-02
US20090176335A1 (en) 2009-07-09
KR20060112611A (ko) 2006-11-01

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