KR101244482B1 - 반도체 장치의 제조 방법 - Google Patents

반도체 장치의 제조 방법 Download PDF

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Publication number
KR101244482B1
KR101244482B1 KR1020040074158A KR20040074158A KR101244482B1 KR 101244482 B1 KR101244482 B1 KR 101244482B1 KR 1020040074158 A KR1020040074158 A KR 1020040074158A KR 20040074158 A KR20040074158 A KR 20040074158A KR 101244482 B1 KR101244482 B1 KR 101244482B1
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KR
South Korea
Prior art keywords
chip
block
adhesive tape
semiconductor chip
dicing tape
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Expired - Fee Related
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KR1020040074158A
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English (en)
Korean (ko)
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KR20050028802A (ko
Inventor
마끼히로미
스가히데유끼
Original Assignee
가부시키가이샤 르네사스 히가시 니혼 세미콘덕터
르네사스 일렉트로닉스 가부시키가이샤
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Publication of KR20050028802A publication Critical patent/KR20050028802A/ko
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402Wafer tapes, e.g. grinding or dicing support tapes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00Cutting or separating of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0442Apparatus for placing on an insulating substrate, e.g. tape
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W95/00Packaging processes not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H10P72/742Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/536Shapes of wire connectors the connected ends being ball-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/5363Shapes of wire connectors the connected ends being wedge-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Dicing (AREA)
  • Die Bonding (AREA)
KR1020040074158A 2003-09-17 2004-09-16 반도체 장치의 제조 방법 Expired - Fee Related KR101244482B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2003324838 2003-09-17
JPJP-P-2003-00324838 2003-09-17
JP2004200101A JP4574251B2 (ja) 2003-09-17 2004-07-07 半導体装置の製造方法
JPJP-P-2004-00200101 2004-07-07

Publications (2)

Publication Number Publication Date
KR20050028802A KR20050028802A (ko) 2005-03-23
KR101244482B1 true KR101244482B1 (ko) 2013-03-18

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020040074158A Expired - Fee Related KR101244482B1 (ko) 2003-09-17 2004-09-16 반도체 장치의 제조 방법

Country Status (5)

Country Link
US (1) US7115482B2 (https=)
JP (1) JP4574251B2 (https=)
KR (1) KR101244482B1 (https=)
CN (2) CN100495650C (https=)
TW (1) TW200512847A (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180087825A (ko) * 2017-01-25 2018-08-02 파스포드 테크놀로지 주식회사 반도체 제조 장치 및 반도체 장치의 제조 방법
KR102177863B1 (ko) * 2020-08-07 2020-11-11 변영기 칩 필름 단계적 박리장치
KR20220119395A (ko) * 2021-02-17 2022-08-29 가부시키가이샤 신가와 반도체 다이의 픽업 장치 및 픽업 방법

Families Citing this family (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4270212B2 (ja) * 2005-03-29 2009-05-27 セイコーエプソン株式会社 基板間隔調整装置、基板間隔調整方法、および液晶表示装置の製造方法
TWI339358B (en) * 2005-07-04 2011-03-21 Hitachi Ltd Rfid tag and manufacturing method thereof
JP4664150B2 (ja) * 2005-08-05 2011-04-06 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体製造装置
WO2007026497A1 (ja) * 2005-08-31 2007-03-08 Shibaura Mechatronics Corporation 半導体チップのピックアップ装置及びピックアップ方法
JP4616748B2 (ja) * 2005-10-11 2011-01-19 株式会社新川 ダイピックアップ装置
JP4765536B2 (ja) * 2005-10-14 2011-09-07 パナソニック株式会社 チップピックアップ装置およびチップピックアップ方法ならびにチップ剥離装置およびチップ剥離方法
JP2007115934A (ja) * 2005-10-21 2007-05-10 Matsushita Electric Ind Co Ltd 電子部品突き上げ装置及び電子部品の供給方法
JP2007142128A (ja) * 2005-11-18 2007-06-07 Renesas Technology Corp 半導体装置およびその製造方法
CN1975995B (zh) * 2005-11-30 2010-09-29 嘉盛马来西亚公司 用于将单切单元传输到收集器中的设备和方法
JP4777761B2 (ja) * 2005-12-02 2011-09-21 株式会社ディスコ ウエーハの分割方法
JP4735829B2 (ja) * 2005-12-06 2011-07-27 澁谷工業株式会社 チップ突き上げ装置
US20120087774A1 (en) * 2006-01-27 2012-04-12 Camtek Ltd Diced Wafer Adaptor and a Method for Transferring a Diced Wafer
JP4758780B2 (ja) * 2006-01-27 2011-08-31 新光電気工業株式会社 半導体装置の製造方法及び半導体装置の実装装置
US7557036B2 (en) * 2006-03-30 2009-07-07 Intel Corporation Method, system, and apparatus for filling vias
JP5054933B2 (ja) 2006-05-23 2012-10-24 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR20070120319A (ko) * 2006-06-19 2007-12-24 삼성전자주식회사 한 쌍의 이젝터들을 구비하는 반도체 칩의 탈착 장치 및이를 이용한 반도체 칩의 탈착 방법
JP2008141068A (ja) * 2006-12-04 2008-06-19 Shibaura Mechatronics Corp 半導体チップのピックアップ装置及びピックアップ方法
US7412892B1 (en) 2007-06-06 2008-08-19 Measurement Specialties, Inc. Method of making pressure transducer and apparatus
JP4864816B2 (ja) * 2007-06-19 2012-02-01 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
TWI463580B (zh) 2007-06-19 2014-12-01 瑞薩科技股份有限公司 Manufacturing method of semiconductor integrated circuit device
US7757742B2 (en) * 2007-07-31 2010-07-20 Asm Assembly Automation Ltd Vibration-induced die detachment system
WO2009109447A2 (de) * 2008-02-29 2009-09-11 Oerlikon Assembly Equipment Ag, Steinhausen Chip-auswerfer
JP5075013B2 (ja) * 2008-05-27 2012-11-14 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
MY150953A (en) 2008-11-05 2014-03-31 Esec Ag Die-ejector
CH699851A1 (de) * 2008-11-05 2010-05-14 Esec Ag Chip-Auswerfer und Verfahren zum Ablösen und Entnehmen eines Halbleiterchips von einer Folie.
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JP2011216529A (ja) * 2010-03-31 2011-10-27 Furukawa Electric Co Ltd:The 半導体装置の製造方法
US8409925B2 (en) * 2011-06-09 2013-04-02 Hung-Jen LEE Chip package structure and manufacturing method thereof
JP5813432B2 (ja) * 2011-09-19 2015-11-17 ファスフォードテクノロジ株式会社 ダイボンダ及びボンディング方法
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CH706280B1 (de) * 2012-03-30 2016-03-15 Esec Ag Verfahren zum Ablösen eines Halbleiterchips von einer Folie.
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JP7112205B2 (ja) * 2018-02-13 2022-08-03 株式会社ディスコ 分割装置
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CH715447B1 (de) * 2018-10-15 2022-01-14 Besi Switzerland Ag Chip-Auswerfer.
JP7237655B2 (ja) 2019-03-01 2023-03-13 ファスフォードテクノロジ株式会社 半導体製造装置および半導体装置の製造方法
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JP7486264B2 (ja) * 2019-11-06 2024-05-17 株式会社ディスコ ピックアップ方法、及び、ピックアップ装置
KR102244580B1 (ko) * 2019-11-08 2021-04-26 세메스 주식회사 다이 이젝터 및 이를 포함하는 다이 픽업 장치
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CN119176305A (zh) * 2023-06-21 2024-12-24 纬创资通(重庆)有限公司 除膜设备与揭膜机构
US12588535B2 (en) 2023-10-11 2026-03-24 Nxp B.V. Semiconductor device having dismantlable structure and method therefor
JP2025170617A (ja) * 2024-05-07 2025-11-19 株式会社新川 ピックアップユニット、実装装置及びピックアップ方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04196342A (ja) * 1990-11-28 1992-07-16 Mitsui Toatsu Chem Inc 半導体ウエハダイシング用フィルム
JPH05109869A (ja) * 1991-10-18 1993-04-30 Sony Corp ダイボンデイング装置
JPH11297793A (ja) * 1998-04-06 1999-10-29 Mitsubishi Electric Corp チップ突き上げ装置及びそれを用いたダイボンディング装置
JP2003133391A (ja) * 2001-10-23 2003-05-09 Fujitsu Ltd 半導体チップの剥離方法及び装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63255937A (ja) * 1987-04-14 1988-10-24 Sumitomo Electric Ind Ltd チツプ実装装置
JP3613838B2 (ja) * 1995-05-18 2005-01-26 株式会社デンソー 半導体装置の製造方法
JP3955659B2 (ja) * 1997-06-12 2007-08-08 リンテック株式会社 電子部品のダイボンディング方法およびそれに使用されるダイボンディング装置
JP2000353710A (ja) 1999-06-14 2000-12-19 Toshiba Corp ペレットピックアップ装置および半導体装置の製造方法
JP2002050670A (ja) * 2000-08-04 2002-02-15 Toshiba Corp ピックアップ装置及びピックアップ方法
JP4021614B2 (ja) * 2000-12-11 2007-12-12 株式会社東芝 半導体素子のピックアップ用治具、半導体素子のピックアップ装置、半導体素子のピックアップ方法、半導体装置の製造方法及び半導体装置の製造装置
JP3870803B2 (ja) * 2002-01-09 2007-01-24 株式会社村田製作所 チップ部品供給装置
JP4230178B2 (ja) * 2002-07-03 2009-02-25 富士通マイクロエレクトロニクス株式会社 半導体チップ剥離装置およびその方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04196342A (ja) * 1990-11-28 1992-07-16 Mitsui Toatsu Chem Inc 半導体ウエハダイシング用フィルム
JPH05109869A (ja) * 1991-10-18 1993-04-30 Sony Corp ダイボンデイング装置
JPH11297793A (ja) * 1998-04-06 1999-10-29 Mitsubishi Electric Corp チップ突き上げ装置及びそれを用いたダイボンディング装置
JP2003133391A (ja) * 2001-10-23 2003-05-09 Fujitsu Ltd 半導体チップの剥離方法及び装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180087825A (ko) * 2017-01-25 2018-08-02 파스포드 테크놀로지 주식회사 반도체 제조 장치 및 반도체 장치의 제조 방법
KR102003130B1 (ko) 2017-01-25 2019-07-23 파스포드 테크놀로지 주식회사 반도체 제조 장치 및 반도체 장치의 제조 방법
KR102177863B1 (ko) * 2020-08-07 2020-11-11 변영기 칩 필름 단계적 박리장치
KR20220119395A (ko) * 2021-02-17 2022-08-29 가부시키가이샤 신가와 반도체 다이의 픽업 장치 및 픽업 방법
KR102840340B1 (ko) * 2021-02-17 2025-07-31 가부시키가이샤 신가와 반도체 다이의 픽업 장치 및 픽업 방법

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CN100495650C (zh) 2009-06-03
CN101320678B (zh) 2010-04-21
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