TW200512847A - Method of manufacturing semiconductor device - Google Patents
Method of manufacturing semiconductor deviceInfo
- Publication number
- TW200512847A TW200512847A TW093126528A TW93126528A TW200512847A TW 200512847 A TW200512847 A TW 200512847A TW 093126528 A TW093126528 A TW 093126528A TW 93126528 A TW93126528 A TW 93126528A TW 200512847 A TW200512847 A TW 200512847A
- Authority
- TW
- Taiwan
- Prior art keywords
- block
- blocks
- dicing tape
- pushed upwardly
- upwardly
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P54/00—Cutting or separating of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W95/00—Packaging processes not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H10P72/742—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/884—Die-attach connectors and bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Dicing (AREA)
- Die Bonding (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003324838 | 2003-09-17 | ||
| JP2004200101A JP4574251B2 (ja) | 2003-09-17 | 2004-07-07 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200512847A true TW200512847A (en) | 2005-04-01 |
| TWI358775B TWI358775B (https=) | 2012-02-21 |
Family
ID=34277750
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093126528A TW200512847A (en) | 2003-09-17 | 2004-09-02 | Method of manufacturing semiconductor device |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7115482B2 (https=) |
| JP (1) | JP4574251B2 (https=) |
| KR (1) | KR101244482B1 (https=) |
| CN (2) | CN100495650C (https=) |
| TW (1) | TW200512847A (https=) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI552250B (zh) * | 2013-03-11 | 2016-10-01 | 捷進科技有限公司 | Collet cleaning method and the use of its grain adapter |
| TWI777030B (zh) * | 2018-02-13 | 2022-09-11 | 日商迪思科股份有限公司 | 分割裝置 |
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| JP4270212B2 (ja) * | 2005-03-29 | 2009-05-27 | セイコーエプソン株式会社 | 基板間隔調整装置、基板間隔調整方法、および液晶表示装置の製造方法 |
| TWI339358B (en) * | 2005-07-04 | 2011-03-21 | Hitachi Ltd | Rfid tag and manufacturing method thereof |
| JP4664150B2 (ja) * | 2005-08-05 | 2011-04-06 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法および半導体製造装置 |
| WO2007026497A1 (ja) * | 2005-08-31 | 2007-03-08 | Shibaura Mechatronics Corporation | 半導体チップのピックアップ装置及びピックアップ方法 |
| JP4616748B2 (ja) * | 2005-10-11 | 2011-01-19 | 株式会社新川 | ダイピックアップ装置 |
| JP4765536B2 (ja) * | 2005-10-14 | 2011-09-07 | パナソニック株式会社 | チップピックアップ装置およびチップピックアップ方法ならびにチップ剥離装置およびチップ剥離方法 |
| JP2007115934A (ja) * | 2005-10-21 | 2007-05-10 | Matsushita Electric Ind Co Ltd | 電子部品突き上げ装置及び電子部品の供給方法 |
| JP2007142128A (ja) * | 2005-11-18 | 2007-06-07 | Renesas Technology Corp | 半導体装置およびその製造方法 |
| CN1975995B (zh) * | 2005-11-30 | 2010-09-29 | 嘉盛马来西亚公司 | 用于将单切单元传输到收集器中的设备和方法 |
| JP4777761B2 (ja) * | 2005-12-02 | 2011-09-21 | 株式会社ディスコ | ウエーハの分割方法 |
| JP4735829B2 (ja) * | 2005-12-06 | 2011-07-27 | 澁谷工業株式会社 | チップ突き上げ装置 |
| US20120087774A1 (en) * | 2006-01-27 | 2012-04-12 | Camtek Ltd | Diced Wafer Adaptor and a Method for Transferring a Diced Wafer |
| JP4758780B2 (ja) * | 2006-01-27 | 2011-08-31 | 新光電気工業株式会社 | 半導体装置の製造方法及び半導体装置の実装装置 |
| US7557036B2 (en) * | 2006-03-30 | 2009-07-07 | Intel Corporation | Method, system, and apparatus for filling vias |
| JP5054933B2 (ja) | 2006-05-23 | 2012-10-24 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| KR20070120319A (ko) * | 2006-06-19 | 2007-12-24 | 삼성전자주식회사 | 한 쌍의 이젝터들을 구비하는 반도체 칩의 탈착 장치 및이를 이용한 반도체 칩의 탈착 방법 |
| JP2008141068A (ja) * | 2006-12-04 | 2008-06-19 | Shibaura Mechatronics Corp | 半導体チップのピックアップ装置及びピックアップ方法 |
| US7412892B1 (en) | 2007-06-06 | 2008-08-19 | Measurement Specialties, Inc. | Method of making pressure transducer and apparatus |
| JP4864816B2 (ja) * | 2007-06-19 | 2012-02-01 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置の製造方法 |
| TWI463580B (zh) | 2007-06-19 | 2014-12-01 | 瑞薩科技股份有限公司 | Manufacturing method of semiconductor integrated circuit device |
| US7757742B2 (en) * | 2007-07-31 | 2010-07-20 | Asm Assembly Automation Ltd | Vibration-induced die detachment system |
| WO2009109447A2 (de) * | 2008-02-29 | 2009-09-11 | Oerlikon Assembly Equipment Ag, Steinhausen | Chip-auswerfer |
| JP5075013B2 (ja) * | 2008-05-27 | 2012-11-14 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置の製造方法 |
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| JP2011216529A (ja) * | 2010-03-31 | 2011-10-27 | Furukawa Electric Co Ltd:The | 半導体装置の製造方法 |
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| KR102304258B1 (ko) * | 2020-03-06 | 2021-09-23 | 세메스 주식회사 | 다이 이젝터 및 이를 포함하는 다이 픽업 장치 |
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| CN114334701A (zh) * | 2020-09-30 | 2022-04-12 | 亿光电子(中国)有限公司 | 电子元件的剥离方法和应用其的超声波振动装置 |
| KR102635493B1 (ko) * | 2020-11-04 | 2024-02-07 | 세메스 주식회사 | 본딩 설비에서 다이를 이송하기 위한 장치 및 방법 |
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| WO2022176076A1 (ja) * | 2021-02-17 | 2022-08-25 | 株式会社新川 | 半導体ダイのピックアップ装置及びピックアップ方法 |
| TWI834450B (zh) * | 2022-12-26 | 2024-03-01 | 梭特科技股份有限公司 | 利用頂出手段結合氣壓控制手段的晶粒剝離方法 |
| CN116093012A (zh) * | 2023-02-13 | 2023-05-09 | 东莞触点智能装备有限公司 | 一种多自由度顶升结构、分离方法及固晶设备 |
| CN119176305A (zh) * | 2023-06-21 | 2024-12-24 | 纬创资通(重庆)有限公司 | 除膜设备与揭膜机构 |
| US12588535B2 (en) | 2023-10-11 | 2026-03-24 | Nxp B.V. | Semiconductor device having dismantlable structure and method therefor |
| JP2025170617A (ja) * | 2024-05-07 | 2025-11-19 | 株式会社新川 | ピックアップユニット、実装装置及びピックアップ方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63255937A (ja) * | 1987-04-14 | 1988-10-24 | Sumitomo Electric Ind Ltd | チツプ実装装置 |
| JPH04196342A (ja) * | 1990-11-28 | 1992-07-16 | Mitsui Toatsu Chem Inc | 半導体ウエハダイシング用フィルム |
| JPH05109869A (ja) * | 1991-10-18 | 1993-04-30 | Sony Corp | ダイボンデイング装置 |
| JP3613838B2 (ja) * | 1995-05-18 | 2005-01-26 | 株式会社デンソー | 半導体装置の製造方法 |
| JP3955659B2 (ja) * | 1997-06-12 | 2007-08-08 | リンテック株式会社 | 電子部品のダイボンディング方法およびそれに使用されるダイボンディング装置 |
| JP3817894B2 (ja) * | 1998-04-06 | 2006-09-06 | 三菱電機株式会社 | チップ突き上げ装置及びそれを用いたダイボンディング装置 |
| JP2000353710A (ja) | 1999-06-14 | 2000-12-19 | Toshiba Corp | ペレットピックアップ装置および半導体装置の製造方法 |
| JP2002050670A (ja) * | 2000-08-04 | 2002-02-15 | Toshiba Corp | ピックアップ装置及びピックアップ方法 |
| JP4021614B2 (ja) * | 2000-12-11 | 2007-12-12 | 株式会社東芝 | 半導体素子のピックアップ用治具、半導体素子のピックアップ装置、半導体素子のピックアップ方法、半導体装置の製造方法及び半導体装置の製造装置 |
| JP3976541B2 (ja) * | 2001-10-23 | 2007-09-19 | 富士通株式会社 | 半導体チップの剥離方法及び装置 |
| JP3870803B2 (ja) * | 2002-01-09 | 2007-01-24 | 株式会社村田製作所 | チップ部品供給装置 |
| JP4230178B2 (ja) * | 2002-07-03 | 2009-02-25 | 富士通マイクロエレクトロニクス株式会社 | 半導体チップ剥離装置およびその方法 |
-
2004
- 2004-07-07 JP JP2004200101A patent/JP4574251B2/ja not_active Expired - Fee Related
- 2004-09-02 TW TW093126528A patent/TW200512847A/zh not_active IP Right Cessation
- 2004-09-16 KR KR1020040074158A patent/KR101244482B1/ko not_active Expired - Fee Related
- 2004-09-17 CN CNB2004100797049A patent/CN100495650C/zh not_active Expired - Fee Related
- 2004-09-17 US US10/942,889 patent/US7115482B2/en not_active Expired - Lifetime
- 2004-09-17 CN CN2008101357379A patent/CN101320678B/zh not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI552250B (zh) * | 2013-03-11 | 2016-10-01 | 捷進科技有限公司 | Collet cleaning method and the use of its grain adapter |
| TWI777030B (zh) * | 2018-02-13 | 2022-09-11 | 日商迪思科股份有限公司 | 分割裝置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4574251B2 (ja) | 2010-11-04 |
| US20050059205A1 (en) | 2005-03-17 |
| US7115482B2 (en) | 2006-10-03 |
| KR20050028802A (ko) | 2005-03-23 |
| CN100495650C (zh) | 2009-06-03 |
| CN101320678B (zh) | 2010-04-21 |
| CN1599035A (zh) | 2005-03-23 |
| JP2005117019A (ja) | 2005-04-28 |
| KR101244482B1 (ko) | 2013-03-18 |
| CN101320678A (zh) | 2008-12-10 |
| TWI358775B (https=) | 2012-02-21 |
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| MM4A | Annulment or lapse of patent due to non-payment of fees |