JP4574251B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

Info

Publication number
JP4574251B2
JP4574251B2 JP2004200101A JP2004200101A JP4574251B2 JP 4574251 B2 JP4574251 B2 JP 4574251B2 JP 2004200101 A JP2004200101 A JP 2004200101A JP 2004200101 A JP2004200101 A JP 2004200101A JP 4574251 B2 JP4574251 B2 JP 4574251B2
Authority
JP
Japan
Prior art keywords
block
chip
push
adhesive tape
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004200101A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005117019A (ja
Inventor
浩 牧
秀幸 須賀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2004200101A priority Critical patent/JP4574251B2/ja
Priority to TW093126528A priority patent/TW200512847A/zh
Priority to KR1020040074158A priority patent/KR101244482B1/ko
Priority to US10/942,889 priority patent/US7115482B2/en
Priority to CNB2004100797049A priority patent/CN100495650C/zh
Priority to CN2008101357379A priority patent/CN101320678B/zh
Publication of JP2005117019A publication Critical patent/JP2005117019A/ja
Application granted granted Critical
Publication of JP4574251B2 publication Critical patent/JP4574251B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W95/00—Packaging processes not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H10P72/742—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Dicing (AREA)
  • Die Bonding (AREA)
JP2004200101A 2003-09-17 2004-07-07 半導体装置の製造方法 Expired - Fee Related JP4574251B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2004200101A JP4574251B2 (ja) 2003-09-17 2004-07-07 半導体装置の製造方法
TW093126528A TW200512847A (en) 2003-09-17 2004-09-02 Method of manufacturing semiconductor device
KR1020040074158A KR101244482B1 (ko) 2003-09-17 2004-09-16 반도체 장치의 제조 방법
US10/942,889 US7115482B2 (en) 2003-09-17 2004-09-17 Method of manufacturing semiconductor device
CNB2004100797049A CN100495650C (zh) 2003-09-17 2004-09-17 制造半导体器件的方法
CN2008101357379A CN101320678B (zh) 2003-09-17 2004-09-17 制造半导体器件的方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003324838 2003-09-17
JP2004200101A JP4574251B2 (ja) 2003-09-17 2004-07-07 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2005117019A JP2005117019A (ja) 2005-04-28
JP4574251B2 true JP4574251B2 (ja) 2010-11-04

Family

ID=34277750

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004200101A Expired - Fee Related JP4574251B2 (ja) 2003-09-17 2004-07-07 半導体装置の製造方法

Country Status (5)

Country Link
US (1) US7115482B2 (https=)
JP (1) JP4574251B2 (https=)
KR (1) KR101244482B1 (https=)
CN (2) CN100495650C (https=)
TW (1) TW200512847A (https=)

Families Citing this family (76)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4270212B2 (ja) * 2005-03-29 2009-05-27 セイコーエプソン株式会社 基板間隔調整装置、基板間隔調整方法、および液晶表示装置の製造方法
TWI339358B (en) * 2005-07-04 2011-03-21 Hitachi Ltd Rfid tag and manufacturing method thereof
JP4664150B2 (ja) * 2005-08-05 2011-04-06 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体製造装置
WO2007026497A1 (ja) * 2005-08-31 2007-03-08 Shibaura Mechatronics Corporation 半導体チップのピックアップ装置及びピックアップ方法
JP4616748B2 (ja) * 2005-10-11 2011-01-19 株式会社新川 ダイピックアップ装置
JP4765536B2 (ja) * 2005-10-14 2011-09-07 パナソニック株式会社 チップピックアップ装置およびチップピックアップ方法ならびにチップ剥離装置およびチップ剥離方法
JP2007115934A (ja) * 2005-10-21 2007-05-10 Matsushita Electric Ind Co Ltd 電子部品突き上げ装置及び電子部品の供給方法
JP2007142128A (ja) * 2005-11-18 2007-06-07 Renesas Technology Corp 半導体装置およびその製造方法
CN1975995B (zh) * 2005-11-30 2010-09-29 嘉盛马来西亚公司 用于将单切单元传输到收集器中的设备和方法
JP4777761B2 (ja) * 2005-12-02 2011-09-21 株式会社ディスコ ウエーハの分割方法
JP4735829B2 (ja) * 2005-12-06 2011-07-27 澁谷工業株式会社 チップ突き上げ装置
US20120087774A1 (en) * 2006-01-27 2012-04-12 Camtek Ltd Diced Wafer Adaptor and a Method for Transferring a Diced Wafer
JP4758780B2 (ja) * 2006-01-27 2011-08-31 新光電気工業株式会社 半導体装置の製造方法及び半導体装置の実装装置
US7557036B2 (en) * 2006-03-30 2009-07-07 Intel Corporation Method, system, and apparatus for filling vias
JP5054933B2 (ja) 2006-05-23 2012-10-24 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR20070120319A (ko) * 2006-06-19 2007-12-24 삼성전자주식회사 한 쌍의 이젝터들을 구비하는 반도체 칩의 탈착 장치 및이를 이용한 반도체 칩의 탈착 방법
JP2008141068A (ja) * 2006-12-04 2008-06-19 Shibaura Mechatronics Corp 半導体チップのピックアップ装置及びピックアップ方法
US7412892B1 (en) 2007-06-06 2008-08-19 Measurement Specialties, Inc. Method of making pressure transducer and apparatus
JP4864816B2 (ja) * 2007-06-19 2012-02-01 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
TWI463580B (zh) 2007-06-19 2014-12-01 瑞薩科技股份有限公司 Manufacturing method of semiconductor integrated circuit device
US7757742B2 (en) * 2007-07-31 2010-07-20 Asm Assembly Automation Ltd Vibration-induced die detachment system
WO2009109447A2 (de) * 2008-02-29 2009-09-11 Oerlikon Assembly Equipment Ag, Steinhausen Chip-auswerfer
JP5075013B2 (ja) * 2008-05-27 2012-11-14 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
MY150953A (en) 2008-11-05 2014-03-31 Esec Ag Die-ejector
CH699851A1 (de) * 2008-11-05 2010-05-14 Esec Ag Chip-Auswerfer und Verfahren zum Ablösen und Entnehmen eines Halbleiterchips von einer Folie.
WO2010054957A1 (de) * 2008-11-12 2010-05-20 Esec Ag Verfahren zum ablösen und entnehmen eines halbleiterchips von einer folie
JP5214421B2 (ja) * 2008-12-04 2013-06-19 キヤノンマシナリー株式会社 剥離装置及び剥離方法
JP5284144B2 (ja) * 2009-03-11 2013-09-11 芝浦メカトロニクス株式会社 半導体チップのピックアップ装置及びピックアップ方法
JP2011129740A (ja) * 2009-12-18 2011-06-30 Disco Abrasive Syst Ltd ウエーハ分割装置およびレーザー加工機
CN101740451B (zh) * 2009-12-23 2011-12-07 广东志成华科光电设备有限公司 芯片分拣设备的顶针机构
JP2011216529A (ja) * 2010-03-31 2011-10-27 Furukawa Electric Co Ltd:The 半導体装置の製造方法
US8409925B2 (en) * 2011-06-09 2013-04-02 Hung-Jen LEE Chip package structure and manufacturing method thereof
JP5813432B2 (ja) * 2011-09-19 2015-11-17 ファスフォードテクノロジ株式会社 ダイボンダ及びボンディング方法
JP2013065757A (ja) * 2011-09-20 2013-04-11 Toshiba Corp 半導体チップのピックアップ方法及び半導体チップのピックアップ装置
JP5337226B2 (ja) * 2011-11-09 2013-11-06 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
CH706280B1 (de) * 2012-03-30 2016-03-15 Esec Ag Verfahren zum Ablösen eines Halbleiterchips von einer Folie.
JP6086763B2 (ja) * 2013-03-11 2017-03-01 ファスフォードテクノロジ株式会社 コレットクリーニング方法及びそれを用いたダイボンダ
JP5647308B2 (ja) * 2013-08-02 2014-12-24 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
CN103730333B (zh) * 2013-12-23 2016-04-20 华中科技大学 一种多顶针芯片剥离装置
KR101596461B1 (ko) * 2014-04-01 2016-02-23 주식회사 프로텍 칩 디테칭 장치 및 칩 디테칭 방법
JP6301203B2 (ja) * 2014-06-02 2018-03-28 株式会社ディスコ チップの製造方法
CN104163276A (zh) * 2014-09-04 2014-11-26 无锡市张泾宇钢机械厂 不干胶贴标机的分段式标签分离装置
CN104210719A (zh) * 2014-09-04 2014-12-17 无锡市张泾宇钢机械厂 不干胶贴标机的标签分离装置
BR112017005898B1 (pt) * 2014-09-24 2022-11-16 B Braun Melsungen Ag Combinação de dispositivo médico e conjunto de embalagem e método de criação de um pacote de dispositivo médico
WO2016151911A1 (ja) * 2015-03-23 2016-09-29 リンテック株式会社 半導体加工用シートおよび半導体装置の製造方法
KR101732074B1 (ko) 2015-09-24 2017-05-02 신진정공 주식회사 투명관체의 유격구조가 형성된 유체 공급관
JP6797569B2 (ja) * 2016-06-13 2020-12-09 ファスフォードテクノロジ株式会社 半導体製造装置および半導体装置の製造方法
JP6621771B2 (ja) * 2017-01-25 2019-12-18 ファスフォードテクノロジ株式会社 半導体製造装置および半導体装置の製造方法
CN108666257B (zh) * 2017-03-31 2021-03-09 日月光半导体制造股份有限公司 元件剥离装置及元件剥离方法
JP6967411B2 (ja) * 2017-09-19 2021-11-17 ファスフォードテクノロジ株式会社 半導体製造装置、半導体装置の製造方法およびコレット
JP7112205B2 (ja) * 2018-02-13 2022-08-03 株式会社ディスコ 分割装置
KR102165569B1 (ko) * 2018-10-15 2020-10-14 세메스 주식회사 다이 이젝팅 장치
CH715447B1 (de) * 2018-10-15 2022-01-14 Besi Switzerland Ag Chip-Auswerfer.
JP7237655B2 (ja) 2019-03-01 2023-03-13 ファスフォードテクノロジ株式会社 半導体製造装置および半導体装置の製造方法
JP7274902B2 (ja) 2019-03-25 2023-05-17 ファスフォードテクノロジ株式会社 半導体製造装置および半導体装置の製造方法
KR102220339B1 (ko) * 2019-05-29 2021-02-25 세메스 주식회사 다이 이젝팅 장치
KR102284150B1 (ko) * 2019-08-06 2021-07-30 세메스 주식회사 다이 본딩 방법 및 다이 본딩 장치
KR102220344B1 (ko) * 2019-09-06 2021-02-25 세메스 주식회사 다이 이젝터 및 이를 포함하는 다이 픽업 장치
KR102221707B1 (ko) * 2019-09-20 2021-03-02 세메스 주식회사 다이 이젝터 및 이를 포함하는 다이 픽업 장치
JP7486264B2 (ja) * 2019-11-06 2024-05-17 株式会社ディスコ ピックアップ方法、及び、ピックアップ装置
KR102244580B1 (ko) * 2019-11-08 2021-04-26 세메스 주식회사 다이 이젝터 및 이를 포함하는 다이 픽업 장치
US11615979B2 (en) * 2019-12-18 2023-03-28 Disco Corporation Method of processing wafer
JP7412219B2 (ja) 2020-02-25 2024-01-12 ファスフォードテクノロジ株式会社 ダイボンディング装置、半導体装置の製造方法および剥離装置
KR102304258B1 (ko) * 2020-03-06 2021-09-23 세메스 주식회사 다이 이젝터 및 이를 포함하는 다이 픽업 장치
KR102177863B1 (ko) * 2020-08-07 2020-11-11 변영기 칩 필름 단계적 박리장치
CN114334701A (zh) * 2020-09-30 2022-04-12 亿光电子(中国)有限公司 电子元件的剥离方法和应用其的超声波振动装置
KR102635493B1 (ko) * 2020-11-04 2024-02-07 세메스 주식회사 본딩 설비에서 다이를 이송하기 위한 장치 및 방법
JP7039675B2 (ja) * 2020-11-18 2022-03-22 ファスフォードテクノロジ株式会社 半導体製造装置および半導体装置の製造方法
KR102866416B1 (ko) * 2020-12-08 2025-09-29 가부시키가이샤 신가와 반도체 다이의 픽업 장치
JP7607462B2 (ja) * 2021-01-26 2024-12-27 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
WO2022176076A1 (ja) * 2021-02-17 2022-08-25 株式会社新川 半導体ダイのピックアップ装置及びピックアップ方法
TWI834450B (zh) * 2022-12-26 2024-03-01 梭特科技股份有限公司 利用頂出手段結合氣壓控制手段的晶粒剝離方法
CN116093012A (zh) * 2023-02-13 2023-05-09 东莞触点智能装备有限公司 一种多自由度顶升结构、分离方法及固晶设备
CN119176305A (zh) * 2023-06-21 2024-12-24 纬创资通(重庆)有限公司 除膜设备与揭膜机构
US12588535B2 (en) 2023-10-11 2026-03-24 Nxp B.V. Semiconductor device having dismantlable structure and method therefor
JP2025170617A (ja) * 2024-05-07 2025-11-19 株式会社新川 ピックアップユニット、実装装置及びピックアップ方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63255937A (ja) * 1987-04-14 1988-10-24 Sumitomo Electric Ind Ltd チツプ実装装置
JPH04196342A (ja) * 1990-11-28 1992-07-16 Mitsui Toatsu Chem Inc 半導体ウエハダイシング用フィルム
JPH05109869A (ja) * 1991-10-18 1993-04-30 Sony Corp ダイボンデイング装置
JP3613838B2 (ja) * 1995-05-18 2005-01-26 株式会社デンソー 半導体装置の製造方法
JP3955659B2 (ja) * 1997-06-12 2007-08-08 リンテック株式会社 電子部品のダイボンディング方法およびそれに使用されるダイボンディング装置
JP3817894B2 (ja) * 1998-04-06 2006-09-06 三菱電機株式会社 チップ突き上げ装置及びそれを用いたダイボンディング装置
JP2000353710A (ja) 1999-06-14 2000-12-19 Toshiba Corp ペレットピックアップ装置および半導体装置の製造方法
JP2002050670A (ja) * 2000-08-04 2002-02-15 Toshiba Corp ピックアップ装置及びピックアップ方法
JP4021614B2 (ja) * 2000-12-11 2007-12-12 株式会社東芝 半導体素子のピックアップ用治具、半導体素子のピックアップ装置、半導体素子のピックアップ方法、半導体装置の製造方法及び半導体装置の製造装置
JP3976541B2 (ja) * 2001-10-23 2007-09-19 富士通株式会社 半導体チップの剥離方法及び装置
JP3870803B2 (ja) * 2002-01-09 2007-01-24 株式会社村田製作所 チップ部品供給装置
JP4230178B2 (ja) * 2002-07-03 2009-02-25 富士通マイクロエレクトロニクス株式会社 半導体チップ剥離装置およびその方法

Also Published As

Publication number Publication date
US20050059205A1 (en) 2005-03-17
US7115482B2 (en) 2006-10-03
KR20050028802A (ko) 2005-03-23
CN100495650C (zh) 2009-06-03
CN101320678B (zh) 2010-04-21
CN1599035A (zh) 2005-03-23
JP2005117019A (ja) 2005-04-28
KR101244482B1 (ko) 2013-03-18
CN101320678A (zh) 2008-12-10
TWI358775B (https=) 2012-02-21
TW200512847A (en) 2005-04-01

Similar Documents

Publication Publication Date Title
JP4574251B2 (ja) 半導体装置の製造方法
KR100638760B1 (ko) 반도체 장치 및 반도체 장치의 제조 방법
JP4864816B2 (ja) 半導体集積回路装置の製造方法
US7015071B2 (en) Method of manufacturing a semiconductor device
KR101405768B1 (ko) 반도체장치의 제조방법
JP4664150B2 (ja) 半導体装置の製造方法および半導体製造装置
WO1996036992A1 (fr) Composant a semi-conducteur et fabrication dudit composant
KR102752951B1 (ko) 웨이퍼의 가공 방법
JP2004186352A (ja) 半導体装置及び半導体装置の製造方法
CN103311150A (zh) 半导体制造装置以及半导体制造装置的控制方法
JP4238669B2 (ja) エキスパンド方法及びエキスパンド装置
JP5431533B2 (ja) 半導体装置の製造方法
JP2005045023A (ja) 半導体装置の製造方法および半導体製造装置
JP2009117867A (ja) 半導体装置の製造方法
US8580070B2 (en) Method of applying an adhesive layer on thincut semiconductor chips of a semiconductor wafer
JP5337226B2 (ja) 半導体集積回路装置の製造方法
JP2004304067A (ja) 半導体製造装置
JP5647308B2 (ja) 半導体集積回路装置の製造方法
WO2010052760A1 (ja) チップ剥離方法、半導体装置の製造方法、及びチップ剥離装置
JP2005057052A (ja) 半導体基板の加工方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070703

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100326

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100406

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20100528

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100607

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100803

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100818

R150 Certificate of patent or registration of utility model

Ref document number: 4574251

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130827

Year of fee payment: 3

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313115

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees