KR101004880B1 - 에폭시 수지 조성물 및 그것을 사용한 반도체장치 - Google Patents
에폭시 수지 조성물 및 그것을 사용한 반도체장치 Download PDFInfo
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- KR101004880B1 KR101004880B1 KR1020057012947A KR20057012947A KR101004880B1 KR 101004880 B1 KR101004880 B1 KR 101004880B1 KR 1020057012947 A KR1020057012947 A KR 1020057012947A KR 20057012947 A KR20057012947 A KR 20057012947A KR 101004880 B1 KR101004880 B1 KR 101004880B1
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- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
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- C08L23/00—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers
- C08L23/26—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers modified by chemical after-treatment
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- C08L61/00—Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
- C08L61/04—Condensation polymers of aldehydes or ketones with phenols only
- C08L61/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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- C08L91/00—Compositions of oils, fats or waxes; Compositions of derivatives thereof
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31511—Of epoxy ether
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31511—Of epoxy ether
- Y10T428/31515—As intermediate layer
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Abstract
Description
Claims (7)
- (A) 주쇄에 비페닐렌기를 갖는 페놀 아랄킬형 에폭시 수지,(B) 페놀 수지,(C) 경화 촉진제,(D) 무기질 충전재, 및(E) 적점 60~140℃, 산가 10~100 ㎎ KOH/g, 수평균 분자량 500~20000, 평균입경 5~100 ㎛의 산화 폴리에틸렌 왁스를 배합해서 되는 반도체 봉지용 에폭시 수지 조성물.
- (A) 에폭시 수지,(B) 주쇄에 비페닐렌기를 갖는 페놀 아랄킬형 페놀 수지,(C) 경화 촉진제,(D) 무기질 충전재, 및(E) 적점 60~140℃, 산가 10~100 ㎎ KOH/g, 수평균 분자량 500~20000, 평균입경 5~100 ㎛의 산화 폴리에틸렌 왁스를 배합해서 되는 반도체 봉지용 에폭시 수지 조성물.
- 제2항의 에폭시 수지 조성물에 있어서,상기 (A) 에폭시 수지가, 주쇄에 비페닐렌기를 갖는 페놀 아랄킬형 에폭시 수지인 반도체 봉지용 에폭시 수지 조성물.
- 제1항 내지 제3항 중 어느 한 항의 에폭시 수지 조성물에 있어서,상기 (E) 산화 폴리에틸렌 왁스의 함유량이, 해당 에폭시 수지 조성물 전체에 대해서 0.01~1 중량%인 반도체 봉지용 에폭시 수지 조성물.
- 제1항 내지 제3항 중 어느 한 항의 에폭시 수지 조성물에 의해 반도체 소자가 봉지되어 있는 반도체장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2003010387 | 2003-01-17 | ||
JPJP-P-2003-00010387 | 2003-01-17 |
Publications (2)
Publication Number | Publication Date |
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KR20050101173A KR20050101173A (ko) | 2005-10-20 |
KR101004880B1 true KR101004880B1 (ko) | 2010-12-28 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020057012947A KR101004880B1 (ko) | 2003-01-17 | 2004-01-16 | 에폭시 수지 조성물 및 그것을 사용한 반도체장치 |
Country Status (7)
Country | Link |
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US (1) | US7157313B2 (ko) |
JP (1) | JP4654912B2 (ko) |
KR (1) | KR101004880B1 (ko) |
CN (2) | CN1738864A (ko) |
MY (1) | MY138721A (ko) |
TW (1) | TWI329122B (ko) |
WO (1) | WO2004065486A1 (ko) |
Families Citing this family (31)
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JP2004300239A (ja) * | 2003-03-31 | 2004-10-28 | Sumitomo Bakelite Co Ltd | 樹脂封止型半導体装置および半導体封止用エポキシ樹脂組成物 |
KR101090653B1 (ko) * | 2004-03-16 | 2011-12-07 | 스미토모 베이클라이트 가부시키가이샤 | 에폭시 수지 조성물 및 반도체장치 |
JP4586405B2 (ja) * | 2004-04-28 | 2010-11-24 | 住友ベークライト株式会社 | エポキシ樹脂組成物及び半導体装置 |
US20070043166A1 (en) * | 2004-07-29 | 2007-02-22 | Norihisa Hoshika | Epoxy resin composition for encapsulating semiconductor chip and semiconductor device |
JP4569260B2 (ja) * | 2004-10-27 | 2010-10-27 | 住友ベークライト株式会社 | エポキシ樹脂組成物及び半導体装置 |
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SG170630A1 (en) * | 2004-11-02 | 2011-05-30 | Sumitomo Bakelite Co | Epoxy resin composition and semiconductor device |
JP5179701B2 (ja) * | 2004-11-24 | 2013-04-10 | 住友ベークライト株式会社 | エポキシ樹脂組成物及び半導体装置 |
KR100561575B1 (ko) * | 2004-12-21 | 2006-03-20 | 제일모직주식회사 | 반도체 소자 밀봉용 에폭시 수지 조성물 |
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KR100739363B1 (ko) | 2005-08-02 | 2007-07-16 | 제일모직주식회사 | 반도체 소자 밀봉용 에폭시 수지 조성물 |
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KR101256699B1 (ko) * | 2005-11-30 | 2013-04-19 | 니폰 가야꾸 가부시끼가이샤 | 페놀 수지 및 그 제조법과 에폭시 수지 및 그 용도 |
JP4973177B2 (ja) * | 2006-01-20 | 2012-07-11 | 住友ベークライト株式会社 | 半導体封止用樹脂組成物及び半導体装置 |
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DE102006055727A1 (de) * | 2006-11-25 | 2008-05-29 | Evonik Degussa Gmbh | Verwendung eines synthetischen Wachsoxidats als Verarbeitungshilfsmittel für transparente polare Polymere |
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KR100898335B1 (ko) * | 2007-12-26 | 2009-05-20 | 제일모직주식회사 | 반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 이용한 반도체 소자 |
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JP5038972B2 (ja) * | 2008-05-14 | 2012-10-03 | 日東電工株式会社 | 半導体封止用樹脂組成物およびその製法、ならびにそれを用いた半導体装置 |
US7986050B2 (en) * | 2008-07-28 | 2011-07-26 | Nitto Denko Corporation | Epoxy resin composition for optical semiconductor element encapsulation and optical semiconductor device using the same |
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- 2004-01-16 JP JP2005508044A patent/JP4654912B2/ja not_active Expired - Lifetime
- 2004-01-16 WO PCT/JP2004/000283 patent/WO2004065486A1/ja active Application Filing
- 2004-01-16 TW TW93101160A patent/TWI329122B/zh not_active IP Right Cessation
- 2004-01-16 MY MYPI20040123A patent/MY138721A/en unknown
- 2004-01-16 CN CNA2004800023101A patent/CN1738864A/zh active Pending
- 2004-01-16 KR KR1020057012947A patent/KR101004880B1/ko active IP Right Grant
- 2004-01-16 CN CN2011100541333A patent/CN102161815B/zh not_active Expired - Lifetime
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Also Published As
Publication number | Publication date |
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CN1738864A (zh) | 2006-02-22 |
TW200417577A (en) | 2004-09-16 |
MY138721A (en) | 2009-07-31 |
CN102161815A (zh) | 2011-08-24 |
JP4654912B2 (ja) | 2011-03-23 |
CN102161815B (zh) | 2012-09-05 |
JPWO2004065486A1 (ja) | 2006-05-18 |
US7157313B2 (en) | 2007-01-02 |
KR20050101173A (ko) | 2005-10-20 |
WO2004065486A1 (ja) | 2004-08-05 |
US20040232532A1 (en) | 2004-11-25 |
TWI329122B (en) | 2010-08-21 |
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