KR100745229B1 - 발광다이오드구조체및그의형성방법 - Google Patents
발광다이오드구조체및그의형성방법 Download PDFInfo
- Publication number
- KR100745229B1 KR100745229B1 KR1019980020379A KR19980020379A KR100745229B1 KR 100745229 B1 KR100745229 B1 KR 100745229B1 KR 1019980020379 A KR1019980020379 A KR 1019980020379A KR 19980020379 A KR19980020379 A KR 19980020379A KR 100745229 B1 KR100745229 B1 KR 100745229B1
- Authority
- KR
- South Korea
- Prior art keywords
- window portion
- light emitting
- emitting diode
- diode structure
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 238000007493 shaping process Methods 0.000 title claims abstract description 10
- 238000000605 extraction Methods 0.000 title abstract description 45
- 238000000034 method Methods 0.000 claims abstract description 71
- 239000000758 substrate Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 16
- 238000000465 moulding Methods 0.000 claims description 10
- 239000004593 Epoxy Substances 0.000 claims description 8
- 230000012010 growth Effects 0.000 claims description 8
- 238000013459 approach Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 230000000873 masking effect Effects 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 2
- 238000001259 photo etching Methods 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 230000009102 absorption Effects 0.000 description 11
- 238000010521 absorption reaction Methods 0.000 description 11
- 230000004907 flux Effects 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 9
- 230000007246 mechanism Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000009987 spinning Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- -1 Si 3 N 4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
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- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
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- 230000031700 light absorption Effects 0.000 description 1
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- 238000005498 polishing Methods 0.000 description 1
- 230000009103 reabsorption Effects 0.000 description 1
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- 238000005488 sandblasting Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
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- 238000012360 testing method Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
Landscapes
- Led Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020070021537A KR100753710B1 (ko) | 1997-06-03 | 2007-03-05 | 발광 다이오드 구조체 및 그의 형성 방법 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US8/868,009 | 1997-06-03 | ||
| US08/868,009 US6229160B1 (en) | 1997-06-03 | 1997-06-03 | Light extraction from a semiconductor light-emitting device via chip shaping |
| US08/868,009 | 1997-06-03 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020070021537A Division KR100753710B1 (ko) | 1997-06-03 | 2007-03-05 | 발광 다이오드 구조체 및 그의 형성 방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR19990006588A KR19990006588A (ko) | 1999-01-25 |
| KR100745229B1 true KR100745229B1 (ko) | 2007-10-16 |
Family
ID=25350913
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019980020379A Expired - Lifetime KR100745229B1 (ko) | 1997-06-03 | 1998-06-02 | 발광다이오드구조체및그의형성방법 |
| KR1020070021537A Expired - Lifetime KR100753710B1 (ko) | 1997-06-03 | 2007-03-05 | 발광 다이오드 구조체 및 그의 형성 방법 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020070021537A Expired - Lifetime KR100753710B1 (ko) | 1997-06-03 | 2007-03-05 | 발광 다이오드 구조체 및 그의 형성 방법 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US6229160B1 (enExample) |
| JP (2) | JPH10341035A (enExample) |
| KR (2) | KR100745229B1 (enExample) |
| DE (2) | DE19861386B4 (enExample) |
| GB (1) | GB2326023A (enExample) |
| TW (1) | TW360984B (enExample) |
Families Citing this family (242)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US6784463B2 (en) * | 1997-06-03 | 2004-08-31 | Lumileds Lighting U.S., Llc | III-Phospide and III-Arsenide flip chip light-emitting devices |
| DE19727233A1 (de) * | 1997-06-26 | 1999-01-07 | Siemens Ag | Strahlungsemittierendes optoelektronisches Bauelement |
| US6346771B1 (en) * | 1997-11-19 | 2002-02-12 | Unisplay S.A. | High power led lamp |
| US8587020B2 (en) | 1997-11-19 | 2013-11-19 | Epistar Corporation | LED lamps |
| US6633120B2 (en) | 1998-11-19 | 2003-10-14 | Unisplay S.A. | LED lamps |
| US6373188B1 (en) * | 1998-12-22 | 2002-04-16 | Honeywell International Inc. | Efficient solid-state light emitting device with excited phosphors for producing a visible light output |
| DE19924316B4 (de) * | 1999-05-27 | 2010-10-07 | Zumtobel Lighting Gmbh | Lumineszenzdiode |
| JP2001007380A (ja) * | 1999-06-25 | 2001-01-12 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| US6486499B1 (en) * | 1999-12-22 | 2002-11-26 | Lumileds Lighting U.S., Llc | III-nitride light-emitting device with increased light generating capability |
| DE19963550B4 (de) * | 1999-12-22 | 2004-05-06 | Epigap Optoelektronik Gmbh | Bipolare Beleuchtungsquelle aus einem einseitig kontaktierten, selbstbündelnden Halbleiterkörper |
| WO2001061765A1 (de) * | 2000-02-15 | 2001-08-23 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes halbleiterbauelement und verfahren zu dessen herstellung |
| DE10006738C2 (de) * | 2000-02-15 | 2002-01-17 | Osram Opto Semiconductors Gmbh | Lichtemittierendes Bauelement mit verbesserter Lichtauskopplung und Verfahren zu seiner Herstellung |
| TW497277B (en) * | 2000-03-10 | 2002-08-01 | Toshiba Corp | Semiconductor light emitting device and method for manufacturing the same |
| JP3795298B2 (ja) * | 2000-03-31 | 2006-07-12 | 豊田合成株式会社 | Iii族窒化物系化合物半導体発光素子の製造方法 |
| DE10019665A1 (de) | 2000-04-19 | 2001-10-31 | Osram Opto Semiconductors Gmbh | Lumineszenzdiodenchip und Verfahren zu dessen Herstellung |
| DE10031821B4 (de) * | 2000-06-30 | 2006-06-14 | Osram Opto Semiconductors Gmbh | LED mit Auskoppelstruktur |
| DE10032838B4 (de) * | 2000-07-06 | 2015-08-20 | Osram Opto Semiconductors Gmbh | Strahlung emittierender Halbleiterchip und Verfahren zu dessen Herstellung |
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| JP4571731B2 (ja) * | 2000-07-12 | 2010-10-27 | シチズン電子株式会社 | 発光ダイオード |
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Also Published As
| Publication number | Publication date |
|---|---|
| DE19807758A1 (de) | 1998-12-10 |
| JP2006135360A (ja) | 2006-05-25 |
| DE19861386B4 (de) | 2014-10-30 |
| JPH10341035A (ja) | 1998-12-22 |
| US20010000209A1 (en) | 2001-04-12 |
| US20010000410A1 (en) | 2001-04-26 |
| KR100753710B1 (ko) | 2007-08-30 |
| US6570190B2 (en) | 2003-05-27 |
| US6323063B2 (en) | 2001-11-27 |
| GB9811180D0 (en) | 1998-07-22 |
| KR20070042938A (ko) | 2007-04-24 |
| DE19807758B4 (de) | 2008-08-14 |
| GB2326023A (en) | 1998-12-09 |
| TW360984B (en) | 1999-06-11 |
| US6229160B1 (en) | 2001-05-08 |
| KR19990006588A (ko) | 1999-01-25 |
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