JPH10341035A - 半導体発光素子および半導体発光素子の製造方法 - Google Patents

半導体発光素子および半導体発光素子の製造方法

Info

Publication number
JPH10341035A
JPH10341035A JP12898798A JP12898798A JPH10341035A JP H10341035 A JPH10341035 A JP H10341035A JP 12898798 A JP12898798 A JP 12898798A JP 12898798 A JP12898798 A JP 12898798A JP H10341035 A JPH10341035 A JP H10341035A
Authority
JP
Japan
Prior art keywords
light emitting
light
emitting device
layer
window
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12898798A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10341035A5 (enExample
Inventor
Michael R Krames
マイケル・アール・クレイムス
Jr Fred A Kish
フレッド・エー・キッシュ，ジュニア
Tun S Tan
トゥン・エス・タン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of JPH10341035A publication Critical patent/JPH10341035A/ja
Publication of JPH10341035A5 publication Critical patent/JPH10341035A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies

Landscapes

  • Led Devices (AREA)
JP12898798A 1997-06-03 1998-05-12 半導体発光素子および半導体発光素子の製造方法 Pending JPH10341035A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/868,009 US6229160B1 (en) 1997-06-03 1997-06-03 Light extraction from a semiconductor light-emitting device via chip shaping
US868,009 1997-06-03

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006031403A Division JP2006135360A (ja) 1997-06-03 2006-02-08 半導体発光素子および半導体発光素子の製造方法

Publications (2)

Publication Number Publication Date
JPH10341035A true JPH10341035A (ja) 1998-12-22
JPH10341035A5 JPH10341035A5 (enExample) 2004-10-21

Family

ID=25350913

Family Applications (2)

Application Number Title Priority Date Filing Date
JP12898798A Pending JPH10341035A (ja) 1997-06-03 1998-05-12 半導体発光素子および半導体発光素子の製造方法
JP2006031403A Pending JP2006135360A (ja) 1997-06-03 2006-02-08 半導体発光素子および半導体発光素子の製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2006031403A Pending JP2006135360A (ja) 1997-06-03 2006-02-08 半導体発光素子および半導体発光素子の製造方法

Country Status (6)

Country Link
US (3) US6229160B1 (enExample)
JP (2) JPH10341035A (enExample)
KR (2) KR100745229B1 (enExample)
DE (2) DE19861386B4 (enExample)
GB (1) GB2326023A (enExample)
TW (1) TW360984B (enExample)

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JP2002026382A (ja) * 2000-07-12 2002-01-25 Citizen Electronics Co Ltd 発光ダイオード
JP2002141556A (ja) * 2000-09-12 2002-05-17 Lumileds Lighting Us Llc 改良された光抽出効果を有する発光ダイオード
JP2004153277A (ja) * 2002-10-29 2004-05-27 Lumileds Lighting Us Llc 輝度が増強された発光デバイス・スポット・エミッタ
JP2004200639A (ja) * 2002-12-13 2004-07-15 Ind Technol Res Inst 発光ダイオード素子の製造方法および発光ダイオード素子
JP2004214531A (ja) * 2003-01-08 2004-07-29 Toyoda Gosei Co Ltd 発光ダイオードおよびｌｅｄライト
JP2004281445A (ja) * 2003-03-12 2004-10-07 Sanyo Electric Co Ltd 積層型発光ダイオード素子
US7038245B2 (en) 2002-03-14 2006-05-02 Kabushiki Kaisha Toshiba Semiconductor light emitting device having angled side surface
JP2006196694A (ja) * 2005-01-13 2006-07-27 Sony Corp 半導体発光素子
JP2006310394A (ja) * 2005-04-26 2006-11-09 Sumitomo Electric Ind Ltd 発光装置、発光装置の製造方法および窒化物半導体基板
JP2007019467A (ja) * 2005-06-10 2007-01-25 Sony Corp 発光ダイオード、発光ダイオードの製造方法、発光ダイオードバックライト、発光ダイオード照明装置、発光ダイオードディスプレイおよび電子機器
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JP2007227980A (ja) * 2007-06-08 2007-09-06 Nichia Chem Ind Ltd 窒化物半導体発光素子および発光素子の製造方法
JP2007335731A (ja) * 2006-06-16 2007-12-27 Sony Corp 発光ダイオード搭載基板、発光ダイオードバックライト、発光ダイオード照明装置、発光ダイオードディスプレイおよび電子機器
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JP2008130721A (ja) * 2006-11-20 2008-06-05 Matsushita Electric Ind Co Ltd 発光装置、半導体発光素子および半導体発光素子の製造方法
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US7465959B2 (en) 2005-03-04 2008-12-16 Kabushiki Kaisha Toshiba Semiconductor light emitting device, semiconductor light emitting apparatus, and method of manufacturing semiconductor light emitting device
US7488989B2 (en) 2003-06-10 2009-02-10 Kabushiki Kaisha Toshiba Semiconductor light emitting element, its manufacturing method and semiconductor light emitting device
JP2009033205A (ja) * 2005-02-14 2009-02-12 Showa Denko Kk 窒化物半導体発光素子の製造方法
JP2009515344A (ja) * 2005-11-04 2009-04-09 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 高い光抽出効率の発光ダイオード（ｌｅｄ）
JP2010506402A (ja) * 2006-10-02 2010-02-25 イルミテックス， インコーポレイテッド Ｌｅｄのシステムおよび方法
JP2010514187A (ja) * 2006-12-21 2010-04-30 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 有形の波長変換器を有する発光装置
US7791098B2 (en) 2004-03-31 2010-09-07 Nichia Corporation Nitride semiconductor light emitting device
US7968897B2 (en) 2004-03-09 2011-06-28 Sanyo Electric Co., Ltd. Light-emitting device having a support substrate and inclined sides
KR101063285B1 (ko) 2009-06-17 2011-09-07 (주)더리즈 방사각이 제어된 반도체 칩
JP2011529267A (ja) * 2008-07-24 2011-12-01 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー 窓層及び光指向構造を含む半導体発光装置
KR101143476B1 (ko) 2009-05-21 2012-05-11 (주)더리즈 경사단면을 갖는 반도체 칩 및 그 제조방법
JP2013034010A (ja) * 2006-02-16 2013-02-14 Lg Electronics Inc 縦型発光素子
US9236529B2 (en) 2013-07-30 2016-01-12 Nichia Corporation Semiconductor light emitting element having semiconductor structure with protrusions and/or recesses
JP2017017110A (ja) * 2015-06-29 2017-01-19 国立研究開発法人情報通信研究機構 深紫外光を放射する半導体発光素子、該半導体発光素子を備える発光モジュール、及び該半導体発光素子の製造方法
JP2022037718A (ja) * 2020-08-25 2022-03-09 シャープセミコンダクターイノベーション株式会社 画像表示素子
US11393958B2 (en) 2016-03-30 2022-07-19 Sony Corporation Light emitting device to improve the extraction efficiency

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US20010000209A1 (en) 2001-04-12
US20010000410A1 (en) 2001-04-26
KR100753710B1 (ko) 2007-08-30
KR100745229B1 (ko) 2007-10-16
US6570190B2 (en) 2003-05-27
US6323063B2 (en) 2001-11-27
GB9811180D0 (en) 1998-07-22
KR20070042938A (ko) 2007-04-24
DE19807758B4 (de) 2008-08-14
GB2326023A (en) 1998-12-09
TW360984B (en) 1999-06-11
US6229160B1 (en) 2001-05-08
KR19990006588A (ko) 1999-01-25

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